Preparation and evaluation of epitaxial silicon films prepared by vacuum evaporation

Abstract

Single crystal silicon films of both types have been deposited in a high (10 −5 torr) vacuum system. Electron beam heating, as well as resistive heating, were used to heat the sources. Low energy argon ion bombardment and thermal etching were used to clean the surfaces of the substrates. The investigated temperature range of the substrates was 1000–1300°C. Single crystal films by back reflection X-ray were obtained when the substrates were above 1125°C (1400°K), which is about 0.8 of the melting point (1700°K). Fast deposition rates ( 1 2 −1μ/min) gave the best films. Diodes and transistors were prepared from some of these films to obtain an indication of the p-n junction and interface perfection. The p-n junctions showed higher reverse bias leakage and thus less perfection than that observed with devices in crystals grown by the Czochralski method.