Silicon Wafer Substrates Research Articles

Fabrication-related impurity study of thin superconducting Al films using x-ray absorption spectroscopy

Superconducting aluminum thin films are integral to many astrophysics detector applications. Using x-ray absorption spectroscopy (XAS), we have studied the residues and adsorbates created during various standard lithography and etch steps, which are commonly used to pattern thin aluminum films into device structures. We have observed the formation of aluminum oxide as α-Al2O3 and aluminum fluoride as β-AlF3. We have observed correlations between these XAS signatures and the Al film’s microwave loss due to two-level systems. This study, which guides the way for future device optimization, further explores the chemical impact of different process steps, including standard silicon substrate wafer cleaning processes, sulfur-hexa-fluoride plasma etching, passivation with a fluorocarbon, and exposure to photoresist adhesion promoters during the lithography process with the help of control samples.

Preparation and mechanical properties of Al-doped TiC films

Abstract Al-doped TiAlxC films were prepared on different substrates (single crystal Al2O3 (0001), stainless steel, and silicon wafer substrates) by co-sputtering, and microstructures and corresponding mechanical properties of TiAlxC films were tested and analyzed. The results indicate that the microhardness of the prepared TiAlxC films would decrease with the increased doping amount of Al while the corresponding friction coefficient would increase. With the increase of Al doping, the excess Al hinders the growth of the nanocrystalline phase in the TiAlxC film, thereby affecting the hardness and wear resistance of the TiAlxC film. When the Al doping is 4.1 at%, the hardness of the film reaches 2, 890 HV, while the friction coefficient is 0.2, indicating that a small amount of Al plays a role in solution strengthening the film. Therefore, the mechanical properties of the Al-doped TiAlxC films could be tailored by the doping amount of Al.

Review of: "Silicon wafer substrates can be used for sample substrates, microfabrication, substrate for nanowires or biological substrates"

Review of: "Silicon wafer substrates can be used for sample substrates, microfabrication, substrate for nanowires or biological substrates"

Investigation of the impact of environmental conditions on the mechanical properties of thin-film copper wafers

Thin-film copper offers excellent film texture for multilevel interconnections in integrated circuit fabrication due to its superior resistance to electromigration and high electrical conductivity. To perform a chemical mechanical planarization process during semiconductor fabrication of copper, it is necessary to have a thorough understanding of the nanomechanical properties of thin-film copper. In this study, thin-film copper and reacted passivation layers on silicon substrate wafers are investigated for their nanomechanical properties under various environmental conditions. The results of this study indicate that thin-film copper passivation layers have different properties in deionized (DI) water and polishing slurry environments compared to thin-film copper exposed to ambient air. Interestingly, variations in temperature within wet environments do not significantly affect the properties of thin-film copper wafers; but changes in properties are largely driven by chemical processes. The insights gained from this study emphasize the significance of considering both the passivation layers and wet environments in semiconductor fabrication processes, which contributes to the advancement of copper-based interconnect materials and optimization of the chemical mechanical planarization process in semiconductor manufacturing.

The key role in the structure and properties of a novel CrNiTiMo high-entropy alloys films prepared by magnetron sputtering: Bias voltage

In this study, CrNiTiMo high-entropy alloys films were prepared on 304 stainless steel and silicon wafer substrates by direct current magnetron sputtering and the effects of bias voltages (0 to −200 V) on microstructure, chemical composition, hardness and corrosion resistance were investigated. The results showed that the surface of the CrNiTiMo HEAs films exhibited equiaxed nanoparticles and are composed of uniformly distributed Cr, Ni, Ti, and Mo elements. Meanwhile, the films developed a columnar structure and formed a biphasic structure with body-centered cubic solid solution and amorphous phases. The roughness decreased and then increased with increasing bias voltage, and the film deposited at −50 V had the lowest roughness (1.02 ± 01 nm), which also had a maximum hardness of approximately 9.52 ± 0.2 GPa and a maximum elastic modulus of approximately 187 ± 6 GPa. In addition, all films showed better corrosion resistance compared to 304 stainless steel substrates at 3.5 wt% NaCl solution. The corrosion current density (icorr) of the films decreased and then increased with increasing bias voltages and reached the lowest icorr of about 2.49 × 10−8A/cm2, indicating that the films deposited at a bias voltage of −50 V had the best corrosion resistance. These was attributed to the formation of the passivation films mainly composed of TiO2 and Cr2O3 and the improvement of the surface quality of the film as well as the refinement of the columnar structure and particles.

Non-contact targeted removal of remnant powder particles from additive manufacturing builds with nano-second laser pulsing

Post-production precision cleaning is one critical challenge in Additive Manufacturing (AM) production of high-value, critical parts/builds. A part shedding particle during its operational use could cause severe complications in critical applications such as medical devices and aerospace components. This study presents a non-contact precision particle removal procedure based on a novel Dry Laser Cleaning (DLC) framework. DLC utilizes the thermo-elastic wave generation/propagation and high-frequency surface acceleration fields to dislodge and remove remnant particles due to inertial forces from a well-defined (user-specified) cleaning zone in a non-contact manner, as opposed to cleaning the entire build surface, which could lead to undesirable re-deposition and re-location of particles as well as high cost. The removal of spherical Stainless Steel 316 L (SS316L) micro-particles commonly used in AM from polished, atomically flat Silicon (Si) wafer substrates with uniform high free surface energy using a nano-second laser pulse is experimentally and computationally investigated. In general, a rough surface has a lower average free surface energy; thus, its cleaning, compared to Si wafer, is less challenging. The data with the SS316-Si material pair offers a consistent baseline. In parallel to experiments, a fully-coupled thermo-mechanical finite element study is also conducted for transient surface acceleration simulations to predict the effectiveness of SS316L micro-particle removal from a Si wafer substrate with laser pulsation. It is observed that SS316L micro-particles with a diameter larger than 5.61 μm, 8.43 μm, and 12.24 μm can be removed entirely at 3 mm, 6 mm, and 9 mm distances from its epicenter, respectively. Accordingly, a work-of-adhesion of 990.8 mJ/m2 is selected between the SS316-Si material pair, consistent with the literature. The reported experiments and simulations demonstrate the potential of the proposed rapid precision particle removal procedure for cleaning critical powder-based AM builds, where the targeted removal of particles is essential for the safe and reliable operation of high-value builds and parts.

The growth and characterization of Au-catalyzed gallium oxide nanowires

AbstractGallium oxide is a powerful and versatile wide band gap semiconductor, which has been gaining scientific interest in recent years due to its applications in power electronics. In this work, the growth of β-gallium oxide (Ga2O3) nanowires has been achieved by the vapor–solid–liquid method on silicon wafer, fused quartz, and gallium oxide thin-film substrates. In a chamber purged of ambient atmosphere, pure gallium was heated to produce gallium vapor, which was then oxidized by minute oxygen impurities in the backing gas to form gallium oxide nanowires on a substrate, inside a vertical tube furnace. On the silicon wafer substrates, β-Ga2O3 nanowires were observed to grow in a specific crystallographic direction via transmission electron microscopy. The resulting nanowires were highly faceted and had a unique polyhedral structure on the gold catalyst ‘cap’ of the nanowire. Time of growth and oxygen-level studies were conducted on nanowires grown on various substrates. Graphical abstract

Wafer-Recyclable, Eco-Friendly, and Multiscale Dry Transfer Printing by Transferable Photoresist for Flexible Epidermal Electronics.

Flexible electronics have been of great interest in the past few decades for their wide-ranging applications in health monitoring, human-machine interaction, artificial intelligence, and biomedical engineering. Currently, transfer printing is a popular technology for flexible electronics manufacturing. However, typical sacrificial intermediate layer-based transfer printing through chemical reactions results in a series of challenges, such as time consumption and interface incompatibility. In this paper, we have developed a time-saving, wafer-recyclable, eco-friendly, and multiscale transfer printing method by using a stable transferable photoresist. Demonstration of photoresist with various, high-resolution, and multiscale patterns from the donor substrate of silicon wafer to different flexible polymer substrates without any damage is conducted using the as-developed dry transfer printing process. Notably, by utilizing the photoresist patterns as conformal masks and combining them with physical vapor deposition and dry lift-off processes, we have achieved in situ fabrication of metal patterns on flexible substrates. Furthermore, a mechanical experiment has been conducted to demonstrate the mechanism of photoresist transfer printing and dry lift-off processes. Finally, we demonstrated the application of in situ fabricated electrode devices for collecting electromyography and electrocardiogram signals. Compared to commercially available hydrogel electrodes, our electrodes exhibited higher sensitivity, greater stability, and the ability to achieve long-term health monitoring.

Nanoscale morphology, optical dynamics and gas sensor of porous silicon

We investigated the multifaceted gas sensing properties of porous silicon thin films electrodeposited onto (100) oriented P-type silicon wafers substrates. Our investigation delves into morphological, optical properties, and sensing capabilities, aiming to optimize their use as efficient gas sensors. Morphological analysis revealed the development of unique surfaces with distinct characteristics compared to untreated sample, yielding substantially rougher yet flat surfaces, corroborated by Minkowski Functionals analysis. Fractal mathematics exploration emphasized that despite increased roughness, HF/ethanol-treated surfaces exhibit flatter attributes compared to untreated Si sample. Optical approaches established a correlation between increased porosity and elevated localized states and defects, influencing the Urbach energy value. This contributed to a reduction in steepness values, attributed to heightened dislocations and structural disturbances, while the transconductance parameter decreases. Simultaneously, porosity enhances the strength of electron‒phonon interaction. The porous silicon thin films were further tested as effective gas sensors for CO2 and O2 vapors at room temperature, displaying notable changes in electrical resistance with varying concentrations. These findings bring a comprehensive exploration of some important characteristics of porous silicon surfaces and established their potential for advanced industrial applications.

Controlling adhesion and thermal stability of tetrahedral amorphous carbon coatings with intermediate sp3C fraction

Tetrahedral amorphous carbon (ta-C) coatings with an intermediate sp3C fraction were deposited on single-crystal silicon wafer substrates via intermittent filtered cathode vacuum arc (FCVA) deposition. The ta-C layer thickness and sp3C fraction in the coatings were adjusted using the deposition duration and bias voltage applied to the substrate, respectively. Some of the coated specimens were annealed at 300 and 600 °C for 4 h in a 5-Pa vacuum. The morphologies and microstructures of the specimens were characterized using scanning electron microscopy and transmission electron microscopy. The hybridization of carbon atoms was analyzed using X-ray photoelectron spectroscopy and micro-Raman spectroscopy. The mechanical characteristics of the coatings, including the critical adhesion load between the coatings and substrates, residual stress in the coatings, and hardness, were characterized. For the specimens deposited by the same bias voltage, even their top ta-C layer thickness ranged from approximately 500 nm to 1500 nm, their residual compressive stress in the coatings was maintained at a low value by the intermittent deposition of FCVA, which varied slightly with the coating thickness. The adhesion strength was improved by increasing the thickness of the as-deposited coating from approximately 12 to 40 N. The residual compressive stress of the post-annealing specimens with sp3C fraction of 45–53.8 % exhibited monotonously increasing or V-shaped variation with increasing annealing temperature. Herein, the underlying mechanisms are discussed in detail.

A Simple Laser-Induced Breakdown Spectroscopy Method for Quantification and Classification of Edible Sea Salts Assisted by Surface-Hydrophilicity-Enhanced Silicon Wafer Substrates.

Salt, one of the most commonly consumed food additives worldwide, is produced in many countries. The chemical composition of edible salts is essential information for quality assessment and origin distinction. In this work, a simple laser-induced breakdown spectroscopy instrument was assembled with a diode-pumped solid-state laser and a miniature spectrometer. Its performances in analyzing Mg and Ca in six popular edible sea salts consumed in South Korea and classification of the products were investigated. Each salt was dissolved in water and a tiny amount of the solution was dropped and dried on the hydrophilicity-enhanced silicon wafer substrate, providing homogeneous distribution of salt crystals. Strong Mg II and Ca II emissions were chosen for both quantification and classification. Calibration curves could be constructed with limits-of-detection of 87 mg/kg for Mg and 45 mg/kg for Ca. Also, the Mg II and Ca II emission peak intensities were used in a k-nearest neighbors model providing 98.6% classification accuracy. In both quantification and classification, intensity normalization using a Na I emission line as a reference signal was effective. A concept of interclass distance was introduced, and the increase in the classification accuracy due to the intensity normalization was rationalized based on it. Our methodology will be useful for analyzing major mineral nutrients in various food materials in liquid phase or soluble in water, including salts.

Examining the microstructure, morphological features, and wetting characteristics of Ti/TiN/TiAlN thin films produced through RF/DC magnetron co-sputtering

This study reports synthesizing and characterizing Ti/TiN/TiAlN thin films deposited on 316 L stainless steel and silicon wafer substrates using the reactive RF/DC magnetron sputtering technique. The films' microstructure, morphology, thickness, roughness, and wettability were investigated experimentally and theoretically using density functional theory (DFT) calculations with the CASTEP program. X-ray diffraction analysis confirmed the formation of the fcc-TiAlN phase for coatings deposited at a DC power of 100 W, while increasing DC power to 150 W resulted in the appearance of a second phase, w-AlN. Field emission scanning electron microscopy images showed the formation of nanostructured coatings with a grain size range of 70–100 nm. The morphology of coatings was altered from a pyramid-like structure to a cauliflower structure by increasing the nitrogen amount in the N2/(Ar+N2) flow ratio. An increase in aluminum amount by increasing the DC power to 150 W enhanced the deposition rate and thickness of the coatings. The coatings deposited at a high N2/(Ar+N2) flow ratio exhibited minor surface roughness attributed to the compact structure. The contact angles obtained from the fabricated Ti/TiN/TiAlN coatings ranged from 86.2° to 114.2°, demonstrating values higher than the contact angle of uncoated 316 L stainless steel, which measured at 82°. Theoretical analysis using DFT calculations with CASTEP provided a fundamental understanding of the thin films' electronic structure and properties, consistent with the experimental results. This study highlights the importance of combining practical and theoretical analyses for a comprehensive understanding of material properties and the design of materials for various applications.

INFLUENCE OF N2 FLOW RATE ON THE PROPERTIES OF VANADIUM NITRIDE THIN FILMS DEPOSITED BY REACTIVE DC MAGNETRON SPUTTERING

Vanadium nitride (VN) thin films have been deposited on silicon wafer substrates by reactive DC magnetron sputtering with varied nitrogen (N2) flow rates from 5.0 to 8.0 sccm without substrate heating. The crystallinity, morphology, and optical properties of the prepared VN films were investigated by gracing-incidence X-ray diffraction (GIXRD), field emission scanning electron microscope (FE-SEM), and UV-Vis-NIR spectrophotometer, respectively. The GIXRD pattern shows that the crystal structure of the films is consistent with the face-centered cubic VN structure. An increase in N2 led to a decrease in film thickness and sheet resistance. On the contrary, the reflectance percentage tends to increase with the increase of N2 flow rate. [Copyright information to be updated in the production process].

Study on particle size and field effect with sp2/sp3 ratio of hydrogenated diamond-like carbon

Hydrogenated diamond-like carbon (HDLC) films were synthesized through a reactive gas-plasma process employing methane (CH4) and hydrogen (H2) as precursor gases on a silicon (100) wafer substrate, conducted at room temperature. The deposition process utilized a biased enhanced nucleation technique, varying the flow rate ratio of hydrogen and methane. The investigations revealed that increasing the methane flow rate led to a reduction in grain size and an augmented nucleation density of HDLC, as evidenced by contact-mode atomic force microscopy (AFM) images. This study demonstrated the effective control of diamond grain growth by introducing high-methane-concentration pulses during deposition. The field emission characteristics of HDLC samples were analyzed, revealing threshold fields of 12.2 V/μm for nanocrystalline films, 8.5 V/μm for subcrystalline films and 4.1 V/μm for microcrystalline films, corroborated by Raman spectra. Surface energy measurements indicated hydrophobic behavior in the samples. Notably, a decrease in the hydrogen/methane ratio was found to increase the sp2 character, which correlated with the emission field. AFM analysis of HDLC samples yielded surface roughness values ranging from 0.2 nm to approximately 0.01 nm, confirming the continuous, non-porous and smooth nature of the surfaces.

Towards 3D Lithium-Ion Full Cells Using Honeycomb-Patterned Carbon Nanotube Forests

The growing demand for electric vehicles and portable electronics has created a significant interest in the scalability, recyclability, and economics of both traditional and emerging battery technologies. Although lithium-ion batteries (LiB) are approaching their theoretical energy density, they will remain a widespread and promising technology as alternative (e.g., Li-metal) chemistries and solid-state architectures are still in relatively early stages of commercial scale-up. Yet, LiB performance can be improved by redesigning the cell geometry to move from planar to 3D designs. 3D designs enable the use of thick electrodes to increase the cell level energy density by minimizing the volume and mass contributions of inactive components, such as current collectors or separators. The rationale for 3D full cell designs lies in the relationship between electrode geometry and the respective energy and power densities. When compared to a planar design, 3D architectures allow for a higher surface area for the same volume and footprint of cell. As a result, a given volume of active material can be distributed with a lower electrode feature thickness. Compared to a planar electrode of a given energy density, the lower thickness contributes to a quadratic improvement in power density which decouples the inherent tradeoff between the energy density and power density that is experienced by planar cells. This suggests that a high aspect ratio 3D cell would give greater power per footprint area while retaining high areal energy density. To meet these criteria, the materials used in fabricating 3D cells must be processable in a manner enabling precise control over geometry, layer conformality and porosity.We are developing thick 3D “honeycomb” full cells by starting with patterned, vertically aligned carbon nanotubes (VA-CNTs) as current collectors. CNTs are widely known to have high thermal and electrical conductivities, and to be mechanically durable; properties which make them an ideal scaffold for 3D cell development. VA-CNTs (“forests”) form by self-organization of CNTs during chemical vapor deposition (CVD) on substrates using common hydrocarbon sources (e.g., C2H2, C2H4). However, well-established CNT growth techniques utilize rigid non-conductive substrates, such as silicon wafers, which necessitates a transfer to a suitable substrate for electrochemical applications. Recently, we translated insights from CNT growth on silicon wafer substrates to grow CNT forests on thin metal foils (Cu) suitable for electrode fabrication. We did this by optimizing the moisture level within the CVD furnace, and using a thin-film stack that forms high-density nanoparticles upon annealing while preventing the poisoning of the Fe catalyst by diffusion of Cu. The resulting CNT forests can reach thicknesses over 350 μm and can be grown from patterned catalyst films having regular hole arrays with feature sizes as small as ~5 μm.Thick composite electrodes are then created by coating CNT forests with Si thin films by CVD. The inherent nanoporosity of the CNT forests (>95%) allows for precursor diffusion into the entirety of the forest cross-section and conformal coating of the individual CNTs. The CVD process is tuned to create dense electrodes with tailored Si loading that can range from ~10 to ~90 at.%. Half-cells using monolithic and honeycomb patterned Si-CNT electrodes (~250 μm tall), Li-metal foil, and a liquid electrolyte/separator combination have been cycled over a range of current densities, demonstrating the electronic connection between the deposited Si and Cu foil via the aligned CNTs. At low current densities and high Si loadings these honeycomb electrodes can exhibit large gravimetric (~1500 mAh/gSi) and areal (~12 mAh/cm2) capacities, with honeycomb Si-CNT composites exhibiting reduced capacity fading when compared to non-patterned electrodes.We continue by investigating these Si-CNT composites as a template for a 3D full cell design. In literature, the difficulty of producing 3D full cells comes from the need to produce high conformality electrolyte films that are pinhole free and which demonstrate sufficient ionic conductivity. To address this issue, we utilize an initiated chemical vapor deposition (iCVD) process to deposit conformal poly(hydroxyethyl methacrylate-co-ethylene glycol diacrylate) thin films on the high aspect ratio CNT forests. These copolymer films are doped with lithium salts to exhibit ionic conductivities on the order of ~10-6 to 10-5 S/cm, which is among the highest conductivities ever exhibited by conformal electrolyte technologies. To complete a full cell design, a slurry-based cathode will be infiltrated into the iCVD coated Si-CNT composite electrodes, from which we aim to assess the cycling behavior and compare the areal energy and power densities of non-patterned and honeycomb architectures.

XANES, XPS and Raman Studies of Hafnium Oxide Thin Films fabricated by RF Magnetron Sputtering at Different Power

Hafnium oxide layer was deposited on unheated silicon wafer and glass substrates at different power by using RF magnetron sputtering technique. The structural property was investigated by Raman spectroscopy. Moreover, HfO2 structure in monoclinic major phase especially at high RF power was found from the Raman spectra in vibrational modes. In addition, oxidations state of hafnium oxide thin films was gained by synchrotron-based X-ray absorption spectroscopy (XAS) using Hf L3-edge of XANES techniques and X-ray photoelectron spectroscopy (XPS) as well. The XANES and XPS results show that the oxidation state of HfO2 films is unchanged at different powers. The thin film prepared at higher power tends to have lower of oxygen vacancy.

Fabrication and Enhancement of Organic Photodetectors Based on Iron Phthalocyanine Films

Iron–phthalocyanine (FePc) organic photoconductive detector was fabricated using pulsed laser deposition (PLD) technique to work in ultraviolet (UV) and visible regions. The organic semiconductor material (iron phthalocyanine) was deposited on n-type silicon wafer (Si) substrates at different thicknesses (100, 200 and 300) nm. FePc organic photoconductive detector has been improved by two methods: the first is to manufacture the detector on PSi substrates, and the second is by coating the detector with polyamide–nylon polymer to enhance the photoconductivity of the FePc detector. The current–voltage (I–V) characteristics, responsivity, photocurrent gain, response time and the quantum efficiency of the fabricated photoconductive detector were measured. The performance of the fabricated detector was taken under dark and illumination using two types of light sources: UV LED with wavelength (365[Formula: see text]nm), power of (10[Formula: see text]W) and Tungsten lamp with wavelength range between (500–800) nm and the optical power of (250[Formula: see text]W). The photoresponse enhancement was improved by coating the FePc films with 200[Formula: see text]nm of polyamide nylon polymer. This type of coating, which can be considered as a surface treatment, highly increased the photoresponse of the fabricated FePc UV detector. The results show that the responsivity increased four orders of magnitudes more than the responsivity of the uncoated FePc film. The effects of the coated polymers on the responsivity and the response time of the detector were investigated.

Shellac as dielectric materials in organic field-effect transistors: from silicon to paper substrates

Recent advances in the design and preparation of electroactive materials, particularly semiconducting and conductive polymers, have resulted in the creation of novel organic electronics with advanced functionality and performance competitive with that of devices made of silicon. With an increasing number of organic and printed electronics being engineered and produced at a larger scale, the environmental cost of the final organic electronic devices (life cycle, environmental impact, etc) needs to be considered. While e-waste is already a growing global problem, improving the sustainability of emerging electronics through a careful materials selection is highly desirable. In this work, we explore the use of shellac as a sustainable greener dielectric material in organic field-effect transistors. A careful examination of shellac in combination with diketopyrrolopyrrole-based semiconducting polymers was performed on rigid substrates through atomic force microscopy (AFM) and the fabrication of thin film transistors. All devices made from this green dielectric showed good performance and device characteristics. Building from this investigation, shellac was further integrated with paper substrates to fabricate paper-based thin film transistors. Thin film samples based on shellac on both silicon wafer and paper substrates were characterized by AFM to investigate solid-state morphology of shellac and selected semiconducting materials. Through careful optimization of the device architecture and processing time, device characteristics and performances on paper substrates (average charge mobilities and on/off current ratios) were comparable to those of devices prepared on silicon wafers, confirming that shellac, in combination with organic semiconducting polymers, can be an advantageous dielectric material to be used for the fabrication of greener and sustainable thin film electronics from renewable feedstocks and components.

Surface study of RF magnetron sputtered silicon nitride thin films

Silicon nitride thin films were deposited on the one-sided P-type polished boron-doped silicon wafer substrate via RF magnetron sputtering using stochimetric silicon nitride target at various target-to-substrate distances. Target to substrate spacing, a nonconventional parameter, was varied to optimize the surface roughness and grain size. This optimization provided a normal distribution of homogenous, densely packed silicon nitride thin film free of surface cracks.. Atomic Force Microscopy was employed to explore the accurate surface roughness parameters of Silicon nitride thin films. The surface roughness and grain analysis for all samples exhibited a direct relation to each other and have an inverse correlation with the target to substrate spacing. The surface morphology of Si3N4 was analyzed by the following parameters; average roughness, root-mean square roughness, maximum peak to valley height, ten-point average roughness, skewness, and kurtosis of the line. The surface roughness of silicon nitride films has notable significance in the manufacturing of bio-sensor based on silicon nitride waveguides.

Paradigm Changing Integration Technology for the Production of Flexible Electronics by Transferring Structures, Dies and Electrical Components from Rigid to Flexible Substrates

Emerging trends like the Internet of Things require an increasing number of different sensors, actuators and electronic devices. To enable new applications, such as wearables and electronic skins, flexible sensor technologies are required. However, established technologies for the fabrication of sensors and actuators, as well as the related packaging, are based on rigid substrates, i.e., silicon wafer substrates and printed circuit boards (PCB). Moreover, most of the flexible substrates investigated until now are not compatible with the aforementioned fabrication technologies on wafers due to their lack of chemical inertness and handling issues. In this presented paper, we demonstrate a conceptually new approach to transfer structures, dies, and electronic components to a flexible substrate by lift-off. The structures to be transferred, including the related electrical contacts and packaging, are fabricated on a rigid carrier substrate, coated with the flexible substrate and finally lifted off from the carrier. The benefits of this approach are the combined advantages of using established semiconductor and microsystem fabrication technologies as well as packaging technologies, such as high precision and miniaturization, as well as a variety of available materials and processes together with those of flexible substrates, such as a geometry adaptivity, lightweight structures and low costs.