Fabrication-related impurity study of thin superconducting Al films using x-ray absorption spectroscopy

Abstract

Superconducting aluminum thin films are integral to many astrophysics detector applications. Using x-ray absorption spectroscopy (XAS), we have studied the residues and adsorbates created during various standard lithography and etch steps, which are commonly used to pattern thin aluminum films into device structures. We have observed the formation of aluminum oxide as α-Al2O3 and aluminum fluoride as β-AlF3. We have observed correlations between these XAS signatures and the Al film’s microwave loss due to two-level systems. This study, which guides the way for future device optimization, further explores the chemical impact of different process steps, including standard silicon substrate wafer cleaning processes, sulfur-hexa-fluoride plasma etching, passivation with a fluorocarbon, and exposure to photoresist adhesion promoters during the lithography process with the help of control samples.