Abstract
Hafnium oxide layer was deposited on unheated silicon wafer and glass substrates at different power by using RF magnetron sputtering technique. The structural property was investigated by Raman spectroscopy. Moreover, HfO2 structure in monoclinic major phase especially at high RF power was found from the Raman spectra in vibrational modes. In addition, oxidations state of hafnium oxide thin films was gained by synchrotron-based X-ray absorption spectroscopy (XAS) using Hf L3-edge of XANES techniques and X-ray photoelectron spectroscopy (XPS) as well. The XANES and XPS results show that the oxidation state of HfO2 films is unchanged at different powers. The thin film prepared at higher power tends to have lower of oxygen vacancy.
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