Silicon Photonic Chip Research Articles

Silicon Photonics Chip for Inter-modal Four Wave Mixing on a Broad Wavelength Range

We design, fabricate and test an integrated silicon photonics chip for inter-modal four wave mixing, whose phase-matching relays on the modal dispersions of different waveguide modes. This phase-matching technique allows for tunable and broadband wavelength conversion and generation. We demonstrate that idler and signal photons can be generated with 800 nm spectral distance in between. We measure several inter-modal combinations, with up to the third order mode involvement. We demonstrate a maximum conversion efficiency of -12.4 dB from 1468.5 nm to 1641.1 nm with a bandwidth of 11 nm. We also prove the high and broadband tunability of the generated signal by scanning the pump wavelength when the signal wavelength is fixed. All these features make the inter-modal four wave mixing a viable solution for all optical processing in the near as well as in the mid infrared and for quantum applications.

Ridge Resonance in Silicon Photonics Harnessing Bound States in the Continuum

AbstractThe theoretical analysis and experimental demonstration of a waveguide resonator are presented based on bound states in the continuum in an integrated photonic chip platform. The continuum has the form of a collimated beam of light which is confined vertically in a transverse electric (TE) mode of a silicon slab. The bound state is a discrete transverse‐magnetic (TM)‐like mode of a ridge on the silicon slab. The coupling between the slab and ridge modes results in a single sharp resonance at the wavelength where they phase match. This phenomenon is experimentally demonstrated on a silicon photonic chip using foundry‐compatible parameters and it is interfaced on‐chip to standard single‐mode silicon nanowire waveguides. The fabricated chip exhibits a single sharp resonance near 1550 nm with a line width of a few nanometers, an extinction ratio of 25 dB, and a thermal stability of 19.5 pm °C−1. It is believed that the demonstration of a resonance operating near a bound state in the continuum realized using guided wave components will form the basis of a new approach to on‐chip wavelength filtering and sensing applications.

Single-shot ultrafast phase retrieval photography.

Single-shot ultrafast photography is a powerful tool for science research and industry applications. In this Letter, a novel strategy for ultrafast imaging of two-dimensional complex (amplitude and phase) objects, which is termed single-shot ultrafast phase retrieval photography (SUP), is proposed and demonstrated. The key component of SUP is a silicon photonic integrated chip, which not only has the function of multi-angle illumination, but also provides ultra-short delays for each illumination source. Combined with an ultra-short pulse source and coherent diffraction imaging, SUP can realize ultrafast single-shot imaging. As a proof of concept, the self-developed multiplexed time delay illumination chip was used for experiments, and we demonstrated the reconstructing of a static complex-valued object with a frame sequence depth of 16 frames from single-shot ptychographic data.

An integrated silicon photonic chip platform for continuous-variable quantum key distribution

Quantum key distribution (QKD) is a quantum communication technology that promises unconditional communication security. High-performance and cost-effective QKD systems are essential for the establishment of quantum communication networks1–3. By integrating all the optical components (except the laser source) on a silicon photonic chip, we have realized a stable, miniaturized and low-cost system for continuous-variable QKD (CV-QKD) that is compatible with the existing fibre optical communication infrastructure4. Here, the integrated silicon photonic chip is demonstrated for CV-QKD. It implements the widely studied Gaussian-modulated coherent state protocol that encodes continuous distributed information on the quadrature of laser light5,6. Our proof-of-principle chip-based CV-QKD system is capable of producing a secret key rate of 0.14 kbps (under collective attack) over a simulated distance of 100 km in fibre, offering new possibilities for low-cost, scalable and portable quantum networks. A sender and a receiver for continuous-variable quantum key distribution are packed onto separate silicon photonic chips. By using an external 1,550-nm laser, a secret key rate of 0.14 kbps is transmitted over a simulated distance of 100 km in fibre.

Rare earth-implanted lithium niobate: Properties and on-chip integration

We investigated the optical properties of rare-earth ions (Yb3+ and Er3+) implanted into lithium niobate (LN) crystals and observed superluminescent emission from a sheet of Yb ions in the Yb-implanted LN crystal (Yb:LN). Moreover, by directly integrating the Er-implanted LN crystal (Er:LN) with a silicon photonic chip with waveguide and resonator structures, we observed the evanescent coupling of photoluminescent light from the Er ions to the optical modes of the waveguide and microcavity. We measured an optical quality factor of about 104 and observed a modification of the photoluminescent emission from Er3+ ions in the integrated structure. The platform can ultimately enable developing the integrated multifunctional quantum photonic devices.

Low connector-to-connector loss through silicon photonic chips using ultra-low loss splicing of SMF-28 to high numerical aperture fibers.

Here we present extremely low connector-to-connector loss (≤3 dB) through silicon photonic chips using ultra-low loss (≤0.15 dB) splicing between SMF-28 and ultra-high numerical aperture (UHNA) fibers. The small MFD from the UHNA fibers enables strong coupling to hybrid TE/TM edge couplers achieving TM (TE) losses of 1.25 (2.35) dB per coupler and low polarization-dependent loss. Mode coupling simulations and tolerance are investigated to understand performance.

Microwave signal switching on a silicon photonic chip

Microwave photonics uses light to carry and process microwave signals over a photonic link. However, light can instead be used as a stimulus to microwave devices that directly control microwave signals. Such optically controlled amplitude and phase-shift switches are investigated for use in reconfigurable microwave systems, but they suffer from large footprint, high optical power level required for switching, lack of scalability and complex integration requirements, restricting their implementation in practical microwave systems. Here, we report Monolithic Optically Reconfigurable Integrated Microwave Switches (MORIMSs) built on a CMOS compatible silicon photonic chip that addresses all of the stringent requirements. Our scalable micrometer-scale switches provide higher switching efficiency and require optical power orders of magnitude lower than the state-of-the-art. Also, it opens a new research direction on silicon photonic platforms integrating microwave circuitry. This work has important implications in reconfigurable microwave and millimeter wave devices for future communication networks.

Optical via for silicon photonic 3D-integrations

We proposed an optical via through which both O- and C-band lights can be coupled from a fiber into different waveguide layers of a silicon photonic chip with multiple waveguide layers. The optical via consists of two grating couplers with various structures in different waveguide layers; these couplers are optimized through particle swarm optimization. From a single fiber, coupling efficiencies of −6.01 and −4.15 dB at 1300 and 1536 nm, respectively, were experimentally obtained for the two grating couplers.

45-degree curved micro-mirror for vertical optical I/O of silicon photonics chip.

The broadband vertical optical inputs/outputs (I/Os) of silicon (Si) photonics pose significant challenges in terms of practical applications. Herein, we worked on a vertical optical I/O using a 45° curved micro-mirror. To verify the optical coupling characteristics, a simulation was conducted. As a result, efficient broadband optical coupling with various types of single-mode optical fibers was obtained owing to its lens function. An integration technology of the curved mirror was also developed based on the semiconductor manufacturing process. A curved micro-mirror with a spherical surface was obtained, and the vertical optical I/O with its lens function was demonstrated experimentally.

On-chip Fourier transform spectrometers by dual-polarized detection

Chip-scale Fourier transform spectrometers (FTSs) have recently emerged for inexpensive, high-resolution spectroscopic applications. In particular, spatial-heterodyne FTSs (SH-FTSs) have drawn considerable attention with a simple and stable configuration based on an array of Mach–Zehnder interferometers (MZIs) with linearly increased optical path differences. There is a significant trade-off between spectral performance and the MZI number. In this work, we propose a dual-polarized SH-FTS, detecting both fundamental transverse electric and transverse magnetic modes, on a silicon photonic chip. Our experimental results show that, compared to the conventional single-polarized design, the MZI number of the dual-polarized SH-FTS can be nearly halved for a smaller footprint with little compromise of spectral performance.

Multi-channel 28-GHz millimeter-wave signal generation on a silicon photonic chip with automated polarization control

We propose and experimentally demonstrate an integrated silicon photonic scheme to generate multi-channel millimeter-wave (MMW) signals for 5G multi-user applications. The fabricated silicon photonic chip has a footprint of 1.1 × 2.1 mm2 and integrates 7 independent channels each having on-chip polarization control and heterodyne mixing functions. 7 channels of 4-Gb/s QPSK baseband signals are delivered via a 2-km multi-core fiber (MCF) and coupled into the chip with a local oscillator (LO) light. The polarization state of each signal light is automatically adjusted and aligned with that of the LO light, and then 7 channels of 28-GHz MMW carrying 4-Gb/s QPSK signals are generated by optical heterodyne beating. Automated polarization-control function of each channel is also demonstrated with ~7-ms tuning time and ~27-dB extinction ratio.

Design of Slow-Light Subwavelength Grating Waveguides for Enhanced On-Chip Methane Sensing by Absorption Spectroscopy

The performance of on-chip gas sensors using absorption spectroscopy are currently limited by the small overlap and reduced interaction length between the light and the analyte. Here, the use of slow-light in subwavelength grating (SWG) waveguide integrated on a silicon photonic chip is proposed to improve methane sensing by tunable diode laser absorption spectroscopy in the near infrared. Such SWG waveguide increases the interaction by two means. First, close to the photonic bandgap edge, a SWG waveguide no longer acts as a metamaterial with a homogeneous index, but rather as a 1D photonic crystal in which slow-light effect enhances the light-analyte interaction. Second, the subwavelength segmentation of the waveguide increases the modal overlap with the air. These two enhancement mechanisms results in a six-fold improvement of the interaction with respect to strip waveguides. In this paper, we discuss how to engineer the group index of SWG waveguides to exploit slow-light effect for the first time. Design guidelines for minimizing propagation loss and disorder effect are discussed considering limitations of typical fabrication processes. SWG waveguides could improve the sensitivity and the limit of detection of on-chip trace-gas sensors that provide a compact, fabrication tolerant, inexpensive, and selective sensing technology.

Broadband couplers for hybrid silicon-chalcogenide glass photonic integrated circuits.

We report on the design, fabrication and testing of three types of coupling structures for hybrid chalcogenide glass Ge23Sb7S70-Silicon (GeSbS-Si) photonic integrated circuit platforms. The first type is a fully etched GeSbS grating coupler defined directly in the GeSbS film. Coupling losses of 5.3 dB and waveguide-to-waveguide back-reflections of 3.4% were measured at a wavelength of 1553 nm. Hybrid GeSbS-to-Si butt couplers and adiabatic couplers transmitting light between GeSbS and Si single-mode waveguides were further developed. The hybrid butt couplers (HBCs) feature coupling losses of 2.7 dB and 9.2% back-reflection. The hybrid adiabatic couplers (HACs) exhibit coupling losses of 0.7 dB and negligible back-reflection. Both HBCs and HACs have passbands exceeding the 100 nm measurement range of the test setup. GeSbS grating couplers and GeSbS-to-Si waveguide couplers can be co-fabricated in the same process flow, providing, for example, a means to first couple high optical power levels required for nonlinear signal processing directly into GeSbS waveguides and to later transition into Si waveguides after attenuation of the pump. Moreover, GeSbS waveguides and HBC transitions have been fabricated on post-processed silicon photonics chips obtained from a commercially available foundry service, with a previously deposited 2 μm thick top waveguide cladding. This fabrication protocol demonstrates the compatibility of the developed integration scheme with standard silicon photonics technology with a complete back-end-of-line process.

New fabrication technique for quantum dots on silicon CMOS chips

Using a transfer printing method, researchers developed a CMOS-friendly silicon photonic chip that could pave the way for large-scale quantum technology.

Observation of nonlinear interference on a silicon photonic chip.

Photonic integrated circuits represent a promising platform for applying quantum information science to areas such as quantum computation, quantum communication, and quantum metrology. While the linear optical approach has greatly contributed to this field, it is often possible to improve the functionality and scalability by making use of nonlinear processes. One interesting phenomenon is the interference between two nonlinear optical processes, where the interference occurs by removing the information as to which of two processes have occurred. In this Letter, we demonstrate a nonlinear interferometer in the pair-photon generation regime by using spontaneous four-wave mixing in an integrated silicon photonic chip. We observe a nonlinear interference in the production rate of photon pairs generated from two different four-wave mixing waveguides. We obtain an interference visibility of 96.8%. This work shows the possibility of integrating and controlling nonlinear-optical-interference components for silicon quantum photonics.

Quantum-dot single-photon source on a CMOS silicon photonic chip integrated using transfer printing

Silicon photonics is a powerful platform for implementing large-scale photonic integrated circuits (PICs) because of its compatibility with mature complementary-metal-oxide-semiconductor (CMOS) technology. Exploiting silicon-based PICs for quantum photonic information processing (or the so-called silicon quantum photonics) provides a promising pathway for large-scale quantum applications. For the development of scalable silicon quantum PICs, a major challenge is integrating on-silicon quantum light sources that deterministically emit single photons. In this regard, the use of epitaxial InAs/GaAs quantum dots (QDs) is a very promising approach because of their capability of deterministic single-photon emission with high purity and indistinguishability. However, the required hybrid integration is inherently difficult and often lacks the compatibility with CMOS processes. Here, we demonstrate a QD single-photon source integrated on a glass-clad silicon photonic waveguide processed by a CMOS foundry. Hybrid integration is performed using transfer printing, which enables us to integrate heterogeneous optical components in a simple pick-and-place manner and thus assemble them after the entire CMOS process is completed. We observe single-photon emission from the integrated QD and its efficient coupling into the silicon waveguide. Our transfer-printing-based approach is fully compatible with CMOS back-end processes and thus will open the possibility for realizing large-scale quantum PICs that leverage CMOS technology.

Strongly Coupled Single-Quantum-Dot–Cavity System Integrated on a CMOS-Processed Silicon Photonic Chip

Quantum photonic integrated circuit (QPIC) is a promising tool for constructing integrated devices for quantum technology applications. In the optical regime, silicon photonics empowered by complementary-metal-oxide-semiconductor (CMOS) technology provides optical components useful for realizing large-scale QPICs. Optical nonlinearity at the single-photon level is required for QPIC to facilitate photon-photon interaction. However, to date, realization of optical elements with deterministic( i.e., not probabilistic) single-photon nonlinearity by using silicon-based components is challenging, despite the enhancement of the functionality of QPICs based on silicon photonics. In this study, we realize for the first time a strongly coupled InAs/GaAs quantum dot-cavity quantum electrodynamics (QED) system on a CMOS-processed silicon photonic chip. The heterogeneous integration of the GaAs cavity on the silicon chip is performed by transfer printing. The cavity QED system on the CMOS photonic chip realized in this work is a promising candidate for on-chip single-photon nonlinear element, which constitutes the fundamental component for future applications based on QPIC, such as, coherent manipulation and nondestructive measurement of qubit states via a cavity, and efficient single-photon filter and router.

Integrated CMOS-compatible Q-switched mode-locked lasers at 1900nm with an on-chip artificial saturable absorber.

We present a CMOS-compatible, Q-switched mode-locked integrated laser operating at 1.9 µm with a compact footprint of 23.6 × 0.6 × 0.78mm. The Q-switching rate is 720 kHz, the mode-locking rate is 1.2 GHz, and the optical bandwidth is 17nm, which is sufficient to support pulses as short as 215 fs. The laser is fabricated using a silicon nitride on silicon dioxide 300-mm wafer platform, with thulium-doped Al2O3 glass as a gain material deposited over the silicon photonics chip. An integrated Kerr-nonlinearity-based artificial saturable absorber is implemented in silicon nitride. A broadband (over 100 nm) dispersion-compensating grating in silicon nitride provides sufficient anomalous dispersion to compensate for the normal dispersion of the other laser components, enabling femtosecond-level pulses. The laser has no off-chip components with the exception of the optical pump, allowing for easy co-integration of numerous other photonic devices such as supercontinuum generation and frequency doublers which together potentially enable fully on-chip frequency comb generation.

Wideband adaptive microwave frequency identification using an integrated silicon photonic scanning filter

Photonic-assisted microwave frequency identification with distinct features, including wide frequency coverage and fast tunability, has been conceived as a key technique for applications such as cognitive radio and dynamic spectrum access. The implementations based on compact integrated photonic chips have exhibited distinct advantages in footprint miniaturization, light weight, and low power consumption, in stark contrast with discrete optical-fiber-based realization. However, reported chip-based instantaneous frequency measurements can only operate at a single-tone input, which stringently limits their practical applications that require wideband identification capability in modern RF and microwave applications. In this article, we demonstrate, for the first time, a wideband, adaptive microwave frequency identification solution based on a silicon photonic integrated chip, enabling the identification of different types of microwave signals from 1 to 30 GHz, including single-frequency, multiple-frequency, chirped-frequency, and frequency-hopping microwave signals, and even their combinations. The key component is a high Q-factor scanning filter based on a silicon microring resonator, which is used to implement frequency-to-time mapping. This demonstration opens the door to a monolithic silicon platform that makes possible a wideband, adaptive, and high-speed signal identification subsystem with a high resolution and a low size, weight, and power (SWaP) for mobile and avionic applications.

硅光子芯片外腔窄线宽半导体激光器

硅光子芯片外腔窄线宽半导体激光器