Modcrn technology is dependent on solid state electronics. Computers, communica tion equipment, medical instruments, and transportation systems all require complex electronic devices. The complexity of these devices is increasing each year, thus placing more demand on the materials and processes used in their fabrication. Manufacture of silicon integrated circuits (SIC) requires as many as 90 processing steps; a completed device is a complex structure containing five or more different materials, including dielectrics, conductors, and semiconductors. These materials, except the substrate semiconductor, are low-defect thin films ( < 3 JIm in most cases) deposited using a variety of techniques. The thin films must be patterned to form individual elements of an integrated circuit or other device. Shape and size of individual elements determine size, ultimate complexity, and operating parameters of a finished device. Increasing the scale of integration (device complexity) may reduce fabrication costs and increase performance; however, it requires a reduction in element geometry. Conventional pattern delineation is accomplished by etching a thin conductor or dielectric film through a polymer resist film that has been selectively patterned. The pattern conventionally is transferred to a resist by exposing to UV radiation through a mask. The polymer's solubility is altered by this exposure, and the pattern is developed by immersion in a solvent (developer), which removes the more soluble material. Resolution of photolithography is limited to 1·-3 JIm mainly as a result of the wavelength (300-40.0. nm) of radiation employed and mask technology. Exposure with short wavelength electrons is currently being developed at several laboratories for pattern generation of features less than I pm. This technique is used to fabricate master masks and complex integrated circuits. For either photo lithography or electron beam lithography to be useful, high-quality resist materials are required. This review attempts to cover materials and processing considerations for both photoresists and electron resists.