Residual Stresses in Thin Single Crystals Bonded to an Amorphous Substrate: Silicon-Integrated Circuits

Abstract

Strains and stresses in the surface area of silicon-integrated circuits have been examined by a double-crystal x-ray diffraction method. The observed topography of the surface of the silicon single crystal is discussed with a simple model. By this nondestructive method strain fields produced by different bonding procedures can be compared and devices which are more likely to crack during temperature changes or by small mechanical loads may be identified.