Silicon Diaphragm Research Articles

Analysis of a novel 3C-SiC thin layer on silicon diaphragms for enhanced stress amplification in MEMS piezoresistive pressure sensors

Analysis of a novel 3C-SiC thin layer on silicon diaphragms for enhanced stress amplification in MEMS piezoresistive pressure sensors

Graphene resonant pressure sensor with ultrahigh responsivity-range product

Graphene has good mechanical properties including large Young’s modulus, making it ideal for many resonant sensing applications. Nonetheless, the development of graphene-based sensors has been limited due to difficulties in fabrication, encapsulation, and packaging. Here, we report a graphene nanoresonator-based resonant pressure sensor. The graphene nano resonator is fabricated on a thin silicon diaphragm that deforms due to pressure differential across it. The deformation-induced strain change results in a resonance frequency shift of the graphene nano resonator. The pressure sensing experiments demonstrate a record high responsivity of 20 kHz kPa−1 over a range of 270 kPa. The design has the potential to reach responsivities up to 500 kHz kPa−1. The reported responsivity is two orders of magnitude higher than the silicon-based resonant pressure sensors. The estimated resolution of pressure sensing is 90 Pa, which is 0.03% of the full-scale range of the pressure sensor. This exceptional performance is attributed to two factors: maintaining a high-quality vacuum environment for the nanoresonator and introducing stimuli through a thin silicon diaphragm. The proposed pressure sensor design provides flexibility to adjust responsivity, range and footprint as needed. The fabrication method is simple and has the potential to be integrated into the modern semiconductor foundries.

Formulation analysis and follow-up study of multi-turn configuration for performance enhancement of MEMS piezoresistive pressure sensor utilized for low-pressure measurement applications

PurposeThe purpose of this research is to study the performance of piezoresistive pressure sensors using polysilicon as the piezoresistive material, which is typically used to measure pressure in high-temperature environments.Design/methodology/approachThe performance of this sensor is enhanced by studying the influence of multi-turn configuration at which the piezoresistors are arranged. Different configurations are studied and compared by laying down their analytical solution.FindingsThe validation of analytical results is accomplished through finite element analysis using the software COMSOL Multiphysics. The best configuration, which uses a partial triple-turn configuration, was able to achieve a sensitivity of 116.00 mV/V/MPa over a simulated pressure range of 0 to 500 KPa.Originality/valueThe literature shows the study of single-turn and double-turn meander-shaped configuration of micro-electromechanical systems piezoresistive pressure sensor but multi-turn meander-shaped configuration using a square silicon diaphragm has not been reported. Its study has reflected promising results than its counterparts based on key performance parameters such as sensitivity and linearity and are more effective to be used for automotive, aviation, biomedical and consumer electronics applications.

Design of a multi-physics coupling MEMS pressure sensor

The pressure measurement of explosion shock wave puts forward high requirements on the temperature resistance and response speed of the sensor. In this paper, a multi-physics coupling pressure sensor is designed to meet requirements. The sensor mainly consists of a Fabry-Perot cavity optical fiber sensing unit, a piezoelectric pressure sensing unit and a thermometric resistance temperature measurement module. Firstly, the structure of the sensor is designed. The top and bottom surfaces of the Fabry-Perot cavity are composed of a silicon diaphragm and a quartz glass. The piezoelectric pressure sensing unit is an AlN film including its electrodes. Pt thermometric resistance is developed to realize real-time temperature monitoring. Secondly, the fabrication process of the sensor is discussed, especially three key technologies. An Al film is sputtered to increase the reflectivity of the quartz glass. The SU-8 photoresist is applied to accurately control the thickness of Fabry-Perot cavity. Etching is adopted to work out the graphics of the AlN piezoelectric film. At last, a complete fabrication process of the sensor is described. The fabrication of multilayer films begins with a double-sided polishing silicon wafer, while Fabry-Perot cavity was from a double-sided polishing quartz glass. Then two parts of the sensor are combined to ensure the multi-physics coupling sensor to achieve complete function.

Optimizing Piezoresistive MEMS Pressure Sensor on a Double Cross Beam Silicon Diaphragm With Statistical Curve-Fitting and Optimization Techniques

Optimizing Piezoresistive MEMS Pressure Sensor on a Double Cross Beam Silicon Diaphragm With Statistical Curve-Fitting and Optimization Techniques

High-sensitivity fiber optic Fabry-Perot ultrasonic sensor based on a grooved silicon diaphragm for partial discharge detection.

An extrinsic fiber optic Fabry-Perot interferometric (EFPI) ultrasonic sensor based on a grooved silicon diaphragm for partial discharge (PD) detection has been proposed. The size of the groove is determined by finite element simulation, which allows the resonant frequency of the sensor to meet the requirements of PD ultrasonic detection and improves the sensitivity of the sensor by 5.07 times compared with that based on a traditional circular diaphragm. The microelectro-mechanical system process is used to fabricate the diaphragm on a silicon-on-insulator wafer, and the prepared diaphragm has a grooved section with a diameter of 829.34µm and a thickness of only 2.09µm. At its resonant frequency of 61.5kHz, the acoustic pressure sensitivity of the sensor is 172.42mV/Pa. The ultrasonic signal detection capability of the sensor is verified in the PD experiment. Furthermore, the characteristics of the corona discharge are successfully manifested based on the ultrasonic waves detected by the EFPI sensor. It is demonstrated that the proposed sensor is suitable for PD detection due to its high sensitivity, simple production process, and good resistance to environmental interference.

A Method for Improving Heat Dissipation and Avoiding Charging Effects for Cavity Silicon-on-Glass Structures

Anode bonding is a widely used method for fabricating devices with suspended structures, and this approach is often combined with deep reactive-ion etching (DRIE) for releasing the device; however, the DRIE process with a glass substrate can potentially cause two critical issues: heat accumulation on the suspended surface and charging effects resulting from the reflection of charged particles from the glass substrate. In particular, for torsional bars with narrow widths, the heat accumulated on the suspended surface may not dissipate efficiently, leading to photoresist burning and, subsequently, resulting in the fracture of the torsional bars; moreover, once etching is finished through the silicon diaphragm, the glass surface becomes charged, and incoming ions are reflected towards the back of the silicon, resulting in the etching of the back surface. To address these issues, we proposed a method of growing silicon oxide on the back of the device layer. By designing, simulating, and fabricating electrostatic torsional micromirrors with common cavity silicon-on-glass (SOG) structures, we successfully validated the feasibility of this approach. This approach ensures effective heat dissipation on the suspended surface, even when the structure is over-etched for an extended period, and enables the complete etching of torsional bars without adverse effects due to the overheating problem; additionally, the oxide layer can block ions from reaching the glass surface, thus avoiding the charging effect commonly observed in SOG structures during DRIE.

Mathematical Modeling and Numerical Simulation of a Single-Turn MEMS Piezoresistive Pressure Sensor for Enhancement of Performance Metrics

Micro-Electro-Mechanical System (MEMS)-based pressure sensors operating on the principle of piezoresistivity have found profound application in various fields like automobile, aerospace, aviation, biomedical and consumer electronics. Various research studies have been conducted to optimize the design of MEMS-based pressure sensors to meet specific requirements of different fields. Modification in the structure of the piezoresistors placed on these sensors has shown great effect in this regard. However, most of these improvements have been validated through fabrication and measurement, but there has been a lack of significant studies developing analytical models to explain these improvements. This paper studies the performance of a single-turn piezoresistor design on a square silicon diaphragm. The analytical model relates the dimensions of the single-turn piezoresistor on a square diaphragm to the output voltage, and hence, sensor sensitivity is laid out. The correctness of the relation is also validated through Finite Element Analysis (FEA) performed using COMSOL Multiphysics software. Hence, an optimized single-turn design is presented which achieves a sensitivity of 203.57[Formula: see text]mV/V/MPa over a pressure range of 0–1[Formula: see text]MPa. These results are then compared to work from existing literature. The comparison shows an improved performance which was achieved by optimizing the design through its derived analytical model. The proposed sensor can be utilized in disposable blood pressure measurement system where high sensor sensitivity is required.

Prototype Optical Bionic Microphone with a Dual-Channel Mach-Zehnder Interferometric Transducer.

A prototype optical bionic microphone with a dual-channel Mach-Zehnder interferometric (MZI) transducer was designed and prepared for the first time using a silicon diaphragm made by microelectromechanical system (MEMS) technology. The MEMS diaphragm mimicked the structure of the fly Ormia Ochracea's coupling eardrum, consisting of two square wings connected through a neck that is anchored via the two torsional beams to the silicon pedestal. The vibrational displacement of each wing at its distal edge relative to the silicon pedestal is detected with one channel of the dual-channel MZI transducer. The diaphragm at rest is coplanar with the silicon pedestal, resulting in an initial phase difference of zero for each channel of the dual-channel MZI transducer and consequently offering the microphone strong temperature robustness. The two channels of the prototype microphone show good consistency in their responses to incident sound signals; they have the rocking and bending resonance frequencies of 482 Hz and 1911 Hz, and their pressure sensitivities at a lower frequency exhibit an "8"-shaped directional dependence. The comparison indicates that the dual-channel MZI transducer-based bionic microphone proposed in this work is advantageous over the Fabry-Perot interferometric transducer-based counterparts extensively reported.

Optimization and fabrication of MEMS based piezoelectric acoustic sensor for wide frequency range and high SPL acoustic application

This paper reports finite element model (FEM) simulation and fabrication of a square shaped diaphragm along with microtunnel for MEMS acoustic sensor which can be used for measurement of wide operational frequency range and high sound pressure level (SPL) 100 dB–180 dB measurement in launching vehicle and aircraft. The structure consists of a piezoelectric ZnO layer sandwiched between two aluminum electrodes on a thin silicon diaphragm. There is a microtunnel in the structure which relates the cavity to the atmosphere for pressure compensation. The microtunnel decides the lower cut-off frequency of device. Analytical and simulation approaches are used to optimize microtunnel dimension and simulation approach for diaphragm structure optimization. The change in displacement, stress, sensitivity and resonance frequency due to different diaphragm sizes with diaphragm thickness variation is also analyzed. The optimized diaphragm structure of 1750 × 1750 μm2 and microtunnel of 100 μm wide and 24 μm deep have been fabricated using bulk micromachining technique. The fabricated device response has been tested using LDV and sensitivity measurement system.

An Efficient Design of the Piezoresistive Pressure Sensor Applied for Micro Aerial Vehicle

In this research, the developing process of a piezoresistive pressure sensor working in the atmosphere environment applied in micro aerial vehicle using the MEMS fabrication method is introduced. The sensor consists of four Au/Cr piezoresistors in a Wheatstone bridge configuration on a wet oxidized silicon diaphragm. To fabricate the sensor, three lithographic steps were conducted: the first one is to define the resistors and Au/Cr lines/pads, the second and the third ones are to determine the width and the thickness of the square SiO2/Si diaphragm, respectively. The sensor diaphragm shape and thickness were defined by the anisotropic etching of Si in tetramethylammonium hydroxide (TMAH) solution, and the resistors array are formed by sputtering and wet etching method. The sensor size is 6000 μm by 6000 μm. The sensor output voltage was measured for various applied pressure levels from -0.9to 1.2 bar with 5V voltage supply. The fabricated pressure sensor also exhibits a sensitivity of 50.1 mV/bar

Numerical Simulation of a Striated Piezoresistive MEMS Pressure Sensor on Circular Silicon Diaphragm: A Finite Element Method-Based Study

Micro-Electro-Mechanical Systems (MEMS) technology has been heavily incorporated into fabrication of sensors due to its undoubtful advantages such as efficient form-factor, low-power consumption and less bulk manufacturing cost. One of the first sensors to undergo transformation in the micro-scale has been the pressure sensor. Pressure sensors are used excessively in various fields such as automobile, aerospace, aviation, biomedical, consumer electronics, etc. Various researches are being conducted to optimize the design of MEMS-based pressure sensors to meet the specific requirements of different fields. This work presents a piezoresistive pressure sensor design with striated-shaped piezoresistors instead of the conventional bar-shaped piezoresistors. Such a configuration allows positioning the short arms of the striated design effectively on the narrow high stress regions. The piezoresistors are embedded on a circular diaphragm. The performance advantage of such a design is validated through analytical models and numerical simulations. Finite Element Analysis (FEA) is deployed using COMSOL Multiphysics software to achieve precise simulation results. The results are then compared to the existing literature. The proposed design achieves a sensitivity of 40.365 mV/V/MPa under a pressure range of 0–1 MPa. The proposed design performs better than existing literature and can be used in applications that require high sensitivity over a long pressure range, for example, in barometric altimeters.

Local stresses effect on micro-machined silicon diaphragm on zinc oxide nanowires piezoelectric sensors

Local stresses effect on micro-machined silicon diaphragm on zinc oxide nanowires piezoelectric sensors

Quantitative analysis of MEMS piezoresistive squared diaphragm pressure sensor for biomedical applications

Now a days MEMS based for biomedical applications with high performance parameters like sensitivity and linearity are required for low pressure range.The low-pressure range (1–5 kPa) is a significant range that comprises intra-body pressures like intracranial pressure (ICP) and intraocular pressure (IOP).A lot of work on piezoresistive pressure sensor with different shapes diaphragms like squared, circular and rectangular has been carried out.In MEMS Piezoresistive Pressure sensors the most important pressure-sensitive component is the squared diaphragm. The performance of the Micro-sensor is directly determined, under uniform applied pressure with its deformation. In pressure sensor design, the accurate relationship between pressure and deformation plays a very consequence role. In this paper, squared diaphragm of silicon material is modeled and simulate using the analytical equations for a thin plate, along with the theory of small-deflection to providing quick insight regarding important parameter like stress and Deformation for the operating pressure range of 0 kPa–5 kPa. The mechanical behavior of micro-machined silicon diaphragm in terms of stress and deflection generation has been simulated.The piezoresistivity principle is used to assess the sensor's sensitivity. The mechanical change in the thin diaphragm in the form of deflection and stress is calculated and presented. In this Modeling both the analytical and simulated(FEA) results for the performance parameters such as stress, Deflection and the output voltage is computed and compared, it is found that the error between analytical and simulation results is no more than 5.6–6.5%.

A Novel High-Sensitivity MEMS Pressure Sensor for Rock Mass Stress Sensing.

This paper proposes a novel high-sensitivity micro-electromechanical system (MEMS) piezoresistive pressure sensor that can be used for rock mass stress monitoring. The entire sensor consists of a cross, dual-cavity, and all-silicon bulk-type (CCSB) structure. Firstly, the theoretical analysis is carried out, and the relationship between the structural parameters of the sensor and the stress is analyzed by finite element simulation and curve-fitting prediction, and then the optimal structural parameters are also analyzed. The simulation results indicate that the sensor with the CCSB structure proposed in this article obtained a high sensitivity of 87.74 μV/V/MPA and a low nonlinearity error of 0.28% full-scale span (FSS) within the pressure range of 0–200 MPa. Compared with All-Si Bulk, grooved All-Si Bulk, Si-Glass Bulk, silicon diaphragm, resistance strain gauge, and Fiber Bragg grating structure pressure sensors, the designed sensor has a significant improvement in sensitivity and nonlinearity error. It can be used as a new sensor for rock disaster (such as collapse) monitoring and forecasting.

High-sensitive MEMS Fabry-Perot pressure sensor employing an internal-external cavity Vernier effect.

In this paper, a high sensitivity pressure sensor employing an internal-external cavity Vernier effect is innovatively achieved with the microelectromechanical systems (MEMS) Fabry-Perot (FP) interferometer. The sensor consists of silicon cavity, vacuum cavity, and silicon-vacuum hybrid cavity, which is fabricated by direct bonding a silicon diaphragm with an etched cylindrical cavity and a silicon substrate. By rationally designing the optical lengths of the silicon cavity and silicon-vacuum hybrid cavity to match, the internal-external cavity Vernier effect will be generated. The proposed cascaded MEMS FP structure exhibits a pressure sensitivity of -1.028 nm/kPa by tracking the envelope evolution of the reflection spectrum, which is 58 times that of the silicon-vacuum hybrid cavity. What's more, it owns a minimal temperature sensitivity of 0.041 nm/°C for the envelope spectrum. The MEMS FP sensor based on internal-external cavity Vernier effect as the promising candidate provides an essential guideline for high sensitivity pressure measurement under the characteristic of short FP sensing cavity length, which demonstrates the value to the research community.

Fabrication of silicon-tipped fiber-optic temperature sensors using aerogel-assisted glass soldering with precise laser heating.

We demonstrate the fabrication of fiber-optic Fabry-Perot interferometer (FPI) temperature sensors by bonding a small silicon diaphragm to the tip of an optical fiber using low melting point glass powders heated by a 980 nm laser on an aerogel substrate. The heating laser is delivered to the silicon FPI using an optical fiber, while the silicon temperature is being monitored using a 1550 nm white-light system, providing localized heating with precise temperature control. The use of an aerogel substrate greatly improves the heating efficiency by reducing the thermal loss of the bonding parts to the ambient environment. A desirable temperature for bonding can be achieved with relatively small heating laser power. The bonding process is carried out in an open space at room temperature for convenient optical alignment. The precise temperature control ensures minimum perturbation to the optical alignment and no induced thermal damage to the optical parts during the bonding process. For demonstration, we fabricated a low-finesse and high-finesse silicon FPI sensor and characterized their measurement resolution and temperature capability. The results show that the fabrication method has a good potential for high-precision fabrication of fiber-optic sensors.

A MEMS-Based High-Fineness Fiber-Optic Fabry-Perot Pressure Sensor for High-Temperature Application.

In this paper, a high-fineness fiber-optic Fabry–Perot high-temperature pressure sensor, based on MEMS technology, is proposed and experimentally verified. The Faber–Perot cavity of the pressure sensor is formed by the anodic bonding of a sensitive silicon diaphragm and a Pyrex glass; a high-fineness interference signal is obtained by coating the interface surface with a high-reflection film, so as to simplify the signal demodulation system. The experimental results show that the pressure sensitivity of this sensor is 55.468 nm/MPa, and the temperature coefficient is 0.01859 nm/°C at 25~300 °C. The fiber-optic pressure sensor has the following advantages: high fineness, high temperature tolerance, high consistency and simple demodulation, resulting in a wide application prospect in the field of high-temperature pressure testing.

Development of MEMS Acoustic Sensor With Microtunnel for High SPL Measurement

The fabrication of piezoelectric ZnO-based micro-electro-mechanical systems (MEMS) acoustic sensor has been reported. The sensor structure consists of a piezoelectric ZnO film deposited between two Al electrodes on a thin silicon diaphragm. A microtunnel is fabricated in the sensor structure using novel approach. This microtunnel is used to protect the diaphragm and determine the lower cut-off frequency of device. The approach presented in this paper completely removed a serious problem of microtunnel blockages during fabrication of sensors. In the developed process, the acoustic sensor fabricated using silicon-on-insulator and the Pyrex glass wafers are diced separately with same chip dimensions. Finally, both Pyrex glass and acoustic sensor chips are fitted in a jig for alignment and then anodically bonded. In reference to microtunnel blockages, the yield of the present technique is obtained as almost 100%. Also, the technique will serve as a cost-effective alternative to the present practice. The developed technique can also be used in manufacturing of similar devices where the microtunnels or microchannels are required in device structure. The technological development is supported by extensive atomic force microscopy (AFM), field emission scanning electron microscopy, Raman spectroscopy, and X-ray diffraction studies of ZnO film; glass-to-silicon bond strength measurement; resonance frequency measurement by laser doppler vibrometer; response characterization of the fabricated sensor, and scanning electron microscopy of microtunnel mouth to demonstrate the feasibility and yield of the process.

Piezoelectric MEMS Acoustic Transducer with Electrically-Tunable Resonant Frequency.

The paper presents a technique to obtain an electrically-tunable matching between the series and parallel resonant frequencies of a piezoelectric MEMS acoustic transducer to increase the effectiveness of acoustic emission/detection in voltage-mode driving and sensing. The piezoelectric MEMS transducer has been fabricated using the PiezoMUMPs technology, and it operates in a plate flexural mode exploiting a 6 mm × 6 mm doped silicon diaphragm with an aluminum nitride (AlN) piezoelectric layer deposited on top. The piezoelectric layer can be actuated by means of electrodes placed at the edges of the diaphragm above the AlN film. By applying an adjustable bias voltage Vb between two properly-connected electrodes and the doped silicon, the d31 mode in the AlN film has been exploited to electrically induce a planar static compressive or tensile stress in the diaphragm, depending on the sign of Vb, thus shifting its resonant frequency. The working principle has been first validated through an eigenfrequency analysis with an electrically induced prestress by means of 3D finite element modelling in COMSOL Multiphysics®. The first flexural mode of the unstressed diaphragm results at around 5.1 kHz. Then, the piezoelectric MEMS transducer has been experimentally tested in both receiver and transmitter modes. Experimental results have shown that the resonance can be electrically tuned in the range Vb = ±8 V with estimated tuning sensitivities of 8.7 ± 0.5 Hz/V and 7.8 ± 0.9 Hz/V in transmitter and receiver modes, respectively. A matching of the series and parallel resonant frequencies has been experimentally demonstrated in voltage-mode driving and sensing by applying Vb = 0 in transmission and Vb = −1.9 V in receiving, respectively, thereby obtaining the optimal acoustic emission and detection effectiveness at the same operating frequency.