Sidewall Angle Measurements Research Articles

Development of a metrological atomic force microscope with a tip-tilting mechanism for 3D nanometrology

A metrological atomic force microscope with a tip-tilting mechanism (tilting-mAFM) has been developed to expand the capabilities of 3D nanometrology, particularly for high-resolution topography measurements at the surfaces of vertical sidewalls and for traceable measurements of nanodevice linewidth. In the tilting-mAFM, the probe tip is tilted from vertical to 16° at maximum such that the probe tip can touch and trace the vertical sidewall of a nanometer-scale structure; the probe of a conventional atomic force microscope cannot reach the vertical surface because of its finite cone angle. Probe displacement is monitored in three axes by using high-resolution laser interferometry, which is traceable to the SI unit of length. A central-symmetric 3D scanner with a parallel spring structure allows probe scanning with extremely low interaxial crosstalk. A unique technique for scanning vertical sidewalls was also developed and applied. The experimental results indicated high repeatability in the scanned profiles and sidewall angle measurements. Moreover, the 3D measurement of a line pattern was demonstrated, and the data from both sidewalls were successfully stitched together with subnanometer accuracy. Finally, the critical dimension of the line pattern was obtained.

A Technique for the Non-Destructive EUV Mask Sidewall Angle Measurement Using Scanning Electron Microscope

EUV mask absorber sidewall angle should be measured for mask Optical Proximity Correction and shadow effect estimation. Hence, verifying the three-dimensional profile of mask topography has become a challenge in EUV mask inspection. This paper evaluates EUV mask sidewall angle measurement by Field-Emission Critical Dimension (CD)-Scanning Electron Microscope (SEM) using JEOL JSM-7401F. SEM only produces two-dimensional gray images. Forming three-dimensional profiles from these images is a critical requirement for the sidewall angle measurement. To obtain three-dimensional information, absorber edge width has to be measured first to measure sidewall angle. We can calculate absorber sidewall angle with the exactly measured edge width and absorber height. Edge width narrows with steeper sidewall angle. We used the image processing function of Matlab to obtain absorber edge width accurately. In the end, every measured sidewall angle was compared to Transmission Electron Microscope (TEM) images to evaluate the validity of SEM results. Measured sidewall angles by SEM and TEM cross-section images have average tolerances of 0.62 degrees.

Distributed force probe bending model of critical dimension atomic force microscopy bias

Critical dimension atomic force microscopy (CD-AFM) is a widely used reference metrology technique. To characterize modern semiconductor devices, small and flexible probes, often 15 to 20 nm in diameter, are used. Recent studies have reported uncontrolled and significant probe-to-probe bias variation during linewidth and sidewall angle measurements. To understand the source of these variations, tip-sample interactions between high aspect ratio features and small flexible probes, and their influence on measurement bias, should be carefully studied. Using theoretical and experimental procedures, one-dimensional (1-D) and two-dimensional (2-D) models of cylindrical probe bending relevant to carbon nanotube (CNT) AFM probes were developed and tested. An earlier 1-D bending model was refined, and a new 2-D distributed force (DF) model was developed. Contributions from several factors were considered, including: probe misalignment, CNT tip apex diameter variation, probe bending before snapping, and distributed van der Waals-London force. A method for extracting Hamaker probe-surface interaction energy from experimental probe-bending data was developed. Comparison of the new 2-D model with 1-D single point force (SPF) model revealed a difference of about 28% in probe bending. A simple linear relation between biases predicted by the 1-D SPF and 2-D DF models was found. The results suggest that probe bending can be on the order of several nanometers and can partially explain the observed CD-AFM probe-to-probe variation. New 2-D and three-dimensional CD-AFM data analysis software is needed to take full advantage of the new bias correction modeling capabilities.

Normal-incidence spectroscopic ellipsometry for critical dimension monitoring

In this letter, we show that normal-incidence spectroscopic ellipsometry can be used for high-accuracy topography measurements on surface relief gratings. We present both experimental and theoretical results which show that spectroscopic ellipsometry or reflectance-difference spectroscopy at near-normal incidence coupled with vector diffraction theory for data analysis is capable of high-accuracy critical dimension (CD), feature height, and sidewall angle measurements in the extreme submicron regime. Quantitative comparisons of optical and cross-sectional scanning electron microscopy (SEM) topography measurements from a number of 350 nm line/space reactive-ion-etched Si gratings demonstrate the strong potential for in situ etching monitoring. This technique can be used for both ex situ and in situ applications and has the potential to replace the use of CD-SEM measurements in some applications.