This paper investigates the temperature dependence of partial thermal resistances of a packaged SiC schottky barrier diode (SBD) for high temperature applications. Transient thermal resistances of the packaged SiC SBD were measured and characterized in temperature range from 27 to 275 °C. The partial thermal resistances were extracted and analyzed using the cumulative and differential thermal structure functions. The extracted partial thermal resistances were compared to the results from the finite difference thermal model, and both results were in good agreement. The temperature dependence of the partial thermal resistance of the SiC device and the Si3N4 substrate contributes to the overall thermal characteristics variation of the packaged SiC SBD.