Abstract
Diamond is a promising material for use in high-power semiconductor devices that are operated under high-temperature conditions. A Schottky barrier diode (SBD) fabricated by using high-quality diamond shows a low reverse leakage current of less than 10−7 A/cm2 in a reverse electrical field of 1.5 MV/cm at room temperature. The leakage current of this diamond SBD is found to be low even at an elevated temperature of 415 K. The leakage current of this diamond SBD is 2–4 orders of magnitude lower than that of a SiC SBD owing to the larger barrier height. The leakage characteristics of the diamond SBD are modeled using the thermionic-field emission model, which well agrees with experimental results.
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