Si Wafers Research Articles

InP/ZnS Quantum Dots for High-Sensitivity Temperature Sensors.

In this work, we report the synthesis of high-quality, nontoxic InP/ZnS core-shell quantum dots (QDs). The temperature-dependent optical properties such as photoluminescence (PL), absorption, and PL decay with time have been investigated. Based on the temperature dependence of optical properties of QDs, three different configurations of temperature sensors using PMMA as the QD host material were fabricated. The temperature sensor configurations are planar thin-film (InP/ZnS QD)/PMMA deposited on a Si wafer (sensor 1), (InP/ZnS QD)/PMMA-filled borosilicate fibers (sensor 2), and InP/ZnS QD-doped electrospun PMMA nanofibers deposited on a Si wafer (sensor 3). After fabrication, the performance of the temperature sensors have been thoroughly investigated through photoluminescence reversibility tests in consecutive heating-cooling cycles, and the sensitivity of the sensors has been calculated. The three sensors have shown different critical reversible temperatures above which they go through irreversible structural damage and lose their reversibility. The highest critical reversible temperature of 95 °C and the highest sensitivity of 2.1% °C-1 have been achieved, which are comparable to Cd- and dye-based temperature sensors reported to date. The sensors were found to be highly stable, which demonstrated negligible degradation even after 30 days of exposure to ambient conditions. The InP/ZnS QD-based optical temperature sensors can be considered to be a potential replacement for toxic heavy-metal QD-based optical temperature sensors.

Numerical and experimental investigation on iron contamination of 200 mm semiconductor-grade CZ-Si by bubble-free layer of quartz crucible

The thickness of bubble-free (BF) layer of the quartz crucible is crucial for heat transfer during the crystal growth process of 200 mm semiconductor-grade CZ silicon. The effect of the BF layer thickness on the contamination of impurity Fe in the wafer was investigated through experimental and numerical simulations. The experimental results demonstrated that a crucible with a 3 mm BF layer (S1) exhibited a lower thermal conductivity (1.37 W/(K• m)) in comparison to a 6 mm BF layer (S2) with a thermal conductivity of 1.72 W/(K• m). Despite the S2 crucible requiring an additional 0.40 kW for thermal compensation, it resulted in a lower concentration of Fe impurities. Compared to S1, S2 crucible offered superior performance in stabilizing the distribution of O and C impurities, resulting in more uniform distribution and improved crystal quality. Simulations indicated that the utilization of S2 quartz crucibles had minimal effect on the velocity field of Ar gas but elevated the melt temperature, strengthened the Taylor-Proudman vortex beneath the crystal-melt interface and altered the flow direction of the secondary vortex. This study highlights the importance of crucible design in controlling the contamination of Fe impurities for the production of high-quality Si wafers.

Microstructural Characterization of InP Films on SOI (001) Substrates Grown by Selective Lateral Metal-Organic Vapor-Phase Epitaxy

To achieve monolithic integration of Si-waveguide-coupled III-V laser diodes, it is important to establish a method of growing high-quality III-V materials on large Si wafers without a thick buffer layer. Here, the lateral aspect ratio trapping (LART) method has recently been attracting attention because of its potential for integrating large-area and high-quality III-V films on (001)-oriented silicon-on-insulator (SOI) substrates. In this paper, we report a detailed microstructural analysis of InP films that were fabricated on (001) SOI substrates by using metal–organic vapor-phase epitaxy and the LART method. The obtained films had an area of around 50 x 4 μm2, which is large enough for them to be used as templates in photonics device fabrication. Transmission electron microscopy revealed that propagation of threading dislocations in the Si/InP interface region was suppressed. However, the films tended to contain other planar defects, such as stacking faults, rotational twin boundaries, and anti- phase boundaries. We discuss the mechanisms underlying the generation of these defects and approaches to suppressing their formation.

Precision micro-particle removal from through-holes via laser-induced plasma shockwaves in additive manufacturing

This study introduces a novel Laser-Induced Plasma (LIP) technique for the non-contact, rapid removal of nano and microparticles from through-holes in Additive Manufacturing (AM) components. This method is crucial for high-value applications, such as medical devices, compact heat exchangers, and aerospace engineering, which require efficient cleaning of intricate parts with holes and channels to address high failure costs. The technique leverages shockwaves generated by LIP to target and clean these complex geometries. The research focuses on two main areas: (i) characterizing the effects of shockwaves in semi-cylindrical channels to understand interactions with complex geometries, and (ii) quantitatively analyzing the removal of Fe-271 microparticles from semi-cylindrical channels of silicon (Si) wafers, selected for their consistent surface properties compared to the rough textures of AM-produced surfaces. Utilizing the experimental set-up Laser-Induced Plasma LIP Cleaning for Additive Manufacturing (LIPCAM), the study demonstrates that complete microparticle removal is achievable up to 20 mm from the plasma source with variable laser pulses. The results indicate that particles larger than 27 μm are entirely removed after a single pulse, and particles larger than 21 μm are removed after 50 pulses. These findings highlight the method's effectiveness in achieving high particle removal efficiency across different distances and particle sizes, thus ensuring thorough decontamination of complex internal structures. The study underscores the potential of this method to enhance the reliability and safety of critical AM builds, making it a viable solution for industries where precision and cleanliness are paramount.

Long-term carrier lifetime instabilities in n-type FZ- and Cz-silicon under illumination at elevated temperature

Even though n-type Si wafers show a lower extent of light-induced degradation, similar degradation and regeneration behavior as in p-type Si materials has been observed for various n-type Si monocrystalline materials. In this work, the long-term behavior of minority charge carrier lifetime in non-diffused n-type FZ-Si and Cz-Si wafers during illumination at elevated temperatures is investigated. Thereby, various influencing factors such as peak firing temperature and treatment temperature are considered. Degradation and a very strong regeneration effect, which exceeds the initial effective lifetime value, can be observed in the samples. Since surface-related saturation current density remains almost constant during degradation and regeneration, the effect seems to be bulk related. The extent of degradation and regeneration could be shown to be firing temperature-dependent. It could also be shown for n-type FZ-Si wafers that higher firing temperatures result in an increased H2 content within the silicon bulk. Investigations of the injection-dependent defect density revealed that the defect formed during degradation is not a deep level Shockley-Read-Hall defect. Observations at different treatment temperatures and constant illumination of 0.9(1) sun photon flux equivalent have shown that a higher treatment temperature leads to faster degradation and regeneration kinetics. Similarly, higher injection rates also speed up regeneration kinetics. Since degradation also occurs in darkness, the bulk related degradation effect in n-type FZ-Si is charge carrier-induced and not necessarily light-induced.

Studies on the Morphological and Mechanical Properties of TiZrHfNiCuCo Metallic Coatings Deposited by DC Magnetron Sputtering

This research aimed to investigate the effects of input power and gas flow rate on the composition, microstructure, and mechanical properties of TiZrHfNiCuCo metallic coatings. These metallic coatings were deposited on a p-type Si wafer using a direct current magnetron sputtering system with varying input powers (100–300 W) and Ar flow rates (5–20 sccm). It was observed that increasing input power and decreasing Ar flow rate led to TiZrHfNiCuCo metallic coatings with higher hardness and smoother surfaces. The experiment resulted in the formation of a metallic amorphous coating. This study describes the mechanism by which the mechanical properties of the TiZrHfNiCuCo coating change according to sputtering parameters. Based on these results, the effects of sputter variables, such as input power and gas flow rate properties, on the properties of coatings are discussed.

UV-OZONE Treatment for Suppressing Surface Damages on Silicon Solar Cells.

In the preparation process of c-Si solar cells, qualified Si wafers must be processed through mechanical processing during manufacturing. Most of these processes involve mechanical processing, which inevitably results in severe mechanical damage layers and a wafer surface with large roughness. The current industry practice involves etching of the damage layer using an acid/alkali solution, and it is usually followed by deposition of additional passivation layers in the subsequent processes. However, even with these treatments, there still remain non-negligible microscopic saw damage and scratches on the wafer surface, which hinder the urgent development of a higher conversion efficiency of solar cells. Here, we provide a simple method to effectively suppress the impact of this surface damage. UV-OZONE treatment, which involves generation of an oxide layer and subsequent cleaning with hydrofluoric acid, leads to the effective regain of solar cell performance due to the passivation of dangling bonds and removal of sharp microstructures based on the creation of mechanical scratches. In addition, PEDOT:PSS/n-Si solar cells were prepared to exploit their strong surface dependence to investigate the effect of scratches on the overall performance. These results further validate the impact of scratches on solar cells, and a simple and effective method for surface damage suppression is provided.

Atom layer deposited TiO2 electron transport layer for silicon heterojunction solar cells to achieve high performance

Silicon/compound heterojunction (SCH) solar cells based on p-type and n-type c-Si wafers using atom layer deposition-TiO2 and low work function metal as the electron transport layer and rear electrode are fabricated. Efficiencies of 20.6 % and 21.6 % are achieved on p-type and n-type silicon solar cells, respectively. High Voc exceeding 700 mV have been realized on both kinds of Si wafers. Special attention has been paid to the SCH solar cells based on p-type c-Si wafers in which the TiO2 electron transport layer serves as the emitter. Carrier transport mechanisms and junction characteristics of the SCH solar cells are analyzed based on dark J-V measurement. The formation of a strong inversion layer at the Si surface region is determined, which implies the high Voc potential of the SCH solar cells based on p-type Si. An optical loss analysis is performed along with a possible solution to further improve the Jsc. The feasibility of TiO2 applied as an efficient electron transport layer (emitter) in p-type SCH solar cells with high performance has been showed.

Effect of the crystallographic orientation of the surface of single-crystal Si wafers on the endotaxial growth of NiSi2 nanoplates

A multi-technique analysis was used to investigate how the orientation of single-crystal Si wafer surfaces affects the size, shape and orientation of NiSi2 nanocrystals grown within the wafers through the thermal diffusion of Ni atoms from a nickel-doped thin film deposited on the surface. Nickel-doped thin films were prepared on silicon wafers with three distinct crystallographic orientations, [001], [110] and [111]. Three sets of samples were then annealed at 500, 600 and 700°C for 2 h. Regardless of crystallographic orientation or annealing temperature, NiSi2 nanoplates with a nearly hexagonal shape grew close to the external surface of the wafers, aligning their larger surfaces parallel to one of the planes of the Si{111} crystallographic form. The crystallographic orientation and annealing temperature in the 500–700°C range did not significantly affect the final values of the average diameter and thickness of the nanoplates. However, significant differences were noted in the number of nanoplates formed in Si wafers with different crystallographic orientations. The results indicate that these observed differences are correlated with the number of pre-existing defects in the wafers that influence the heterogeneous nucleation process. In addition, the average size and size dispersion were determined for pores at the surface of the Si wafers formed due to the etching process used for native oxide removal.

Insights into the Heat‐Assisted Intensive Light‐Soaking Effect on Silicon Heterojunction Solar Cells

Heat‐assisted intensive light soaking has been proposed as an effective posttreatment to further enhance the performance of silicon heterojunction (SHJ) solar cells. In the current study, it is aimed to distinguish the effects of heat and illumination on different (doped and undoped) layers of the SHJ contact stack. It is discovered that both elevated temperature and illumination are necessary to significantly reduce interface recombination when working effectively together. The synergistic effect on passivation displays a thermal activation energy of approximately 0.5 eV. This is likely due to the photogenerated electron/hole pairs in the c–Si wafer, where nearly all of the incident light is absorbed. By distinguishing between the effects of light and heat effects on the conductivity of p‐ and n‐type doped hydrogenated amorphous silicon (a–Si:H) layers, it is demonstrated that only heat is accountable for the observed rise in conductivity. According to numerical device simulations, the significant contribution to the open‐circuit voltage enhancement arises from the reduced density of defect states at the c–Si/intrinsic a–Si:H interface. In addition, the evolution of the fill factor is highly dependent on changes in interface defect density and the band tail state density of p‐type a–Si:H.

Controllable preparation of red phosphorus nanoribbons for enhanced photocatalytic degradation of Methyl Orange and Tetracycline.

Nanoribbons (NRs), leveraging the flexibility of one-dimensional materials and the expansive surface area of two-dimensional materials, offer heightened exposure to edge sites and superior charge transfer rates. Consequently, they present promising prospects within the domain of photocatalysis. Crystalline red phosphorus (cRP), dcharacterized by its layered and fibrous structure, lends itself readily to the production of nanoribbons. Our study demonstrates a robust method for achieving high-yield, high-quality cRP by concurrently introducing mineralizing agent I2 and Si wafers into the Chemical Vapor Transport (CVT) synthesis process. Through ultrasound assistance, we transformed high-quality cRP into crystalline red phosphorus nanoribbons (cRP NRs) with an average thickness ranging from 7.5 to 17.5nm and an average width between 75 and 175nm. cRP NRs (I2 and Si) showcased impressive degradation capabilities towards Methyl Orange (MO) and Tetracycline (TC), achieving a remarkable 99% degradation of MO within 18min under the simulated visible-light irradiation. The reactive species capturing experiments confirmed that ·O2- was the primary active agent responsible for the photocatalytic degradation of MO.

Beam test of n-type Silicon pad array detector at PS CERN

This work reports the test of an n-type silicon pad array detector at the CERN PS in the context of the future Forward Calorimeter (FoCal) detector. FoCal is a proposed upgrade in the ALICE detector operating within the pseudorapidity range of 3.2 < η < 5.8. It aims to measure direct photons, neutral hadrons, vector mesons, and jets for the study of gluon saturation effects in the unexplored region of low momentum fraction x (∼ 10-5–10-6). The prototype is a 8×9 n-type Si pad array detector with each pad occupying one cm2 area, fabricated on a 6-in, 325 ± 10 μm thick, and high-resistivity (∼ 7 kΩ cm) Si wafer, which is readout using the HGCROCv2 chip. The detector is tested using pion beams of energy 10 GeV and electron beams of energy 1–5 GeV. The measurements of the Minimum Ionizing Particle (MIP) response of pions and the shower profiles of electrons are reported.

Development of a cost-effective confocal Raman microscopy with high sensitivity

Confocal Raman microscopy is a powerful technique for identifying materials and molecular species; however, the signal from Raman scattering is extremely weak. Typically, handheld Raman instruments are cost-effective but less sensitive, while high-end scientific-grade Raman instruments are highly sensitive but extremely expensive. This limits the widespread use of Raman technique in our daily life. To bridge this gap, we explored and developed a cost-effective yet highly sensitive confocal Raman microscopy system. The key components of the system include an excitation laser based on readily available laser diode, a lens-grating-lens type spectrometer with high throughput and image quality, and a sensitive detector based on a linear charge-coupled device (CCD) that can be cooled down to −30 °C. The developed compact Raman instrument can provide high-quality Raman spectra with good spectral resolution. The 3rd order 1450 cm−1 peak of Si (111) wafer shows a signal-to-noise ratio (SNR) better than 10:1, demonstrating high sensitivity comparable to high-end scientific-grade Raman instruments. We also tested a wide range of different samples (organic molecules, minerals and polymers) to demonstrate its universal application capability.

Enhanced Activation in Phosphorous-Doped Silicon via Dual-Beam Laser Annealing.

In this study, we conduct a comparative analysis of single-beam laser annealing (SBLA) and dual-beam laser annealing (DBLA) techniques for semiconductor manufacturing. In the DBLA approach, two laser beams were precisely aligned to simultaneously heat a phosphorus-doped silicon (Si) wafer. The main objective was to investigate the impact of the two annealing techniques on the electrical properties, crystalline structure, and diffusion profile of the treated phosphorus-doped Si at equivalent laser powers. Both SBLA and DBLA improved the electrical properties of the phosphorus-doped Si, evidenced by increased carrier concentration and reduced carrier mobility. Additionally, the crystalline structure of the phosphorus-doped Si showed favorable modifications, with no defects and improved crystallinity. While both SBLA and DBLA produced similar phosphorus profiles with no significant redistribution of dopants compared to the as-implanted sample, DBLA achieved a higher activation ratio than SBLA. Although the results suggest improved dopant activation with minimal diffusion, further studies are needed to clearly confirm the effect of DBLA on dopant activation and diffusion.

Development and Characterization of N2O-Plasma Oxide Layers for High-Temperature p-Type Passivating Contacts in Silicon Solar Cells.

Full-area passivating contacts based on SiOx/poly-Si stacks are key for the new generation of industrial silicon solar cells substituting the passivated emitter and rear cell (PERC) technology. Demonstrating a potential efficiency increase of 1 to 2% compared to PERC, the utilization of n-type wafers with an n-type contact at the back and a p-type diffused boron emitter has become the industry standard in 2024. In this work, variations of this technology are explored, considering p-type passivating contacts on p-type Si wafers formed via a rapid thermal processing (RTP) step. These contacts could be useful in conjunction with n-type contacts for realizing solar cells with passivating contacts on both sides. Here, a particular focus is set on investigating the influence of the applied thermal treatment on the interfacial silicon oxide (SiOx) layer. Thin SiOx layers formed via ultraviolet (UV)-O3 exposure are compared with layers obtained through a plasma treatment with nitrous oxide (N2O). This process is performed in the same plasma enhanced chemical vapor deposition (PECVD) chamber used to grow the Si-based passivating layer, resulting in a streamlined process flow. For both oxide types, the influence of the RTP thermal budget on passivation quality and contact resistivity is investigated. Whereas the UV-O3 oxide shows a pronounced degradation when using high thermal budget annealing (T > 860 °C), the N2O-plasma oxide exhibits instead an excellent passivation quality under these conditions. Simultaneously, the contact resistivity achieved with the N2O-plasma oxide layer is comparable to that yielded by UV-O3-grown oxides. To unravel the mechanisms behind the improved performance obtained with the N2O-plasma oxide at high thermal budget, characterization by high-resolution (scanning) transmission electron microscopy (HR-(S)TEM), X-ray reflectometry (XRR) and X-ray photoelectron spectroscopy (XPS) is conducted on layer stacks featuring both N2O and UV-O3 oxides after RTP. A breakup of the UV-O3 oxide at high thermal budget is observed, whereas the N2O oxide is found to maintain its structural integrity along the interface. Furthermore, chemical analysis reveals that the N2O oxide is richer in oxygen and contains a higher amount of nitrogen compared to the UV-O3 oxide. These distinguishing characteristics can be directly linked to the enhanced stability exhibited by the N2O oxide under higher annealing temperatures and extended dwell times.

Wafer-scale fabrication of evacuated alkali vapor cells.

We describe a process for fabricating a wafer-scale array of alkali metal vapor cells with low residual gas pressure. We show that by etching long, thin channels between the cells on the Si wafer surface, the residual gas pressure in the evacuated vapor cell can be reduced to below 0.5 kPa (4 Torr) with a yield above 50%. The low residual gas pressure in these mass-producible alkali vapor cells can enable a new generation of low-cost chip-scale atomic devices such as vapor cell optical clocks, wavelength references, and Rydberg sensors.

Electrical Performance, Loss Analysis, and Efficiency Potential of Industrial‐Type PERC, TOPCon, and SHJ Solar Cells: A Comparative Study

ABSTRACTCurrently, the efficiency of p‐type passivated emitter and rear contact (PERC) cells has been growing at an absolute efficiency of 0.5% per year and has reached 23%–23.5% in mass production while getting closer to its theoretical efficiency limit. n‐Type tunnel oxide passivated contact (TOPCon) and silicon heterojunction (SHJ) cells with their superior “passivating selective contacts” technology were the most interesting photovoltaics (PV) technology in the industry. The effect of different passivated contact layers with respect to their influence on the J0, J0,metal, ρc, and the carrier selectivity (S10) and the loss analysis and efficiency potential of industrial‐type PERC, TOPCon, and SHJ solar cells were studied and compared. The results showed that TOPCon structure with a high passivation performance and good optical performance is more suitable for bifacial solar cell and the highest theoretical limiting efficiency with metal shading on the n‐type Si wafer (ηb,e,h,m,max) can be achieved to 27.62%. Although SHJ structure with the highest passivation performance but the worst optical performance owing to the parasitic absorption of a‐Si:H layer and high contact resistivity, the value of ηb,e,h,m,max is 0.7% lower than that of TOPCon solar cells. PERC structure has superior optical performance than SHJ structure, but due to poor passivation performance, the ηb,e,h,m,max is only 26.42%. The next‐generation products may be heterojunction back‐contact (HBC) and TOPCon back‐contact (TBC) cells with high ηb,e,h,m,max of 28.12% and 27.99%, respectively. Exploiting a perfect passivation of the noncontact area, the wide process window and low cost are required and transferring these new concepts to industrial solar cell production will be the next major challenge.

Influence of the annealing schemes on the formation and stability of Ni(Pt)Si thin films: Partial, laser, total, and one-step annealings

In this study, the impact of various annealing schemes on the formation and agglomeration mechanisms of ultrathin Ni(Pt)Si films is investigated. To this end, 11 ± 1 nm-thick Ni(Pt)Si films are grown on 300 mm Si(100) wafers using various traditional rapid thermal annealing procedures as well as laser annealing. The obtained silicide films are then subjected to additional annealing between 500 and 800 °C, to evaluate their stability at high temperature. The correlation between the as-grown Ni(Pt)Si film properties and their capability to withstand agglomeration is analyzed via a complementary approach of several techniques (Rs, ellipsometry, TEM-EDX, SEM, and EBSD). Texture comparison for ultrathin films give deeper insights into the role of the NiSi-(010) and NiSi-(013) orientations in the agglomeration phenomenon. Depending on the annealing schemes used during the silicide formation, there is a strong correlation between the initial microstructure of Ni(Pt)Si films and their subsequent degradation. Indeed, cross-analysis of these different key parameters indicates that the presence of small Ni(Pt)Si grains (40 nm) obtained after laser annealing, and a high ratio of Ni(Pt)Si grains oriented along the (013) direction appears to be more efficient in delaying the agglomeration to higher temperatures.

Large area pulsed laser deposition of memristive Pr0.7Ca0.3MnO3 heterostructures for neuromorphic computing

Heterostructures of the perovskite Pr0.7Ca0.3MnO3 (PCMO) and a tunnel oxide such as AlOx are highly interesting memristive devices for emulating synaptic properties in neuromorphic circuits. Future chip generations with these memristive elements requires PLD systems which enables PCMO growth on a full wafer. To address the issue of plume broadening in this study, a slit system was used to localize the deposition region, thereby eliminating the need for excessive scanning. This study investigates the effect of the slit system and process gas pressure on plume broadening. This investigation has been used to parameterize a simulation software to assess the effectiveness of different movement speeds and to develop strategies for homogeneous deposition, adjustable to a chosen film thickness in the order of twenty nanometers. We used these strategies to fabricate area dependent switching memory cells on a standard 4″ Si wafer using the material combination of Pr0.7Ca0.3MnO3 and AlOx. The influence of the aluminum oxide thickness on the switching shows that the IV loop starts to exhibit a hysteresis for AlOx thicknesses ≥ 3 nm. An increase in AlOx thickness leads to an increase in resistance and capacitive charging. An additional thermal treatment reduces the resistance and the switching voltage and increases the ratio between low resistive and high resistive state. Devices without thermal treatment of the PCMO are compatible for back end of line processing of standard CMOS technology.

Spatial arrangements and types of dislocations in interfacial networks obtained by Si(001) wafer bonding at low twist angle: A TEM characterization

Two interfacial dislocation networks were obtained in a Si–Si material system by wafer bonding process for low twist angles around 0.2°. For one sample, one of the two initial wafers was rotated with an additional angle of 90° before the bonding. TEM analyses of samples prepared for planar and transverse views show different characteristics in terms of spatial arrangement and dislocation types. Long climbing segments slightly deviated from the [100] axis and short segments a/2<101> are arranged in the dislocation network obtained with an additional rotation and at the lowest twist angle (Ψ = 0.18°) from a <110> axis. Long screw segments a/2<110> and short partial Shockley segments are arranged in the dislocation network obtained without any additional rotation at the highest twist angle (Ψ = 0.27°) from a <110> axis. In both cases, the long and short segments form elongated hexagonal patterns, which are accurately ordered in one set paving the <100> directions or randomly ordered in two perpendicular sets paving the <110> directions, respectively. The results are discussed taking into account the arangement of the surface miscut steps in the initial wafers before the bonding.