Spatial arrangements and types of dislocations in interfacial networks obtained by Si(001) wafer bonding at low twist angle: A TEM characterization

Abstract

Two interfacial dislocation networks were obtained in a Si–Si material system by wafer bonding process for low twist angles around 0.2°. For one sample, one of the two initial wafers was rotated with an additional angle of 90° before the bonding. TEM analyses of samples prepared for planar and transverse views show different characteristics in terms of spatial arrangement and dislocation types. Long climbing segments slightly deviated from the [100] axis and short segments a/2<101> are arranged in the dislocation network obtained with an additional rotation and at the lowest twist angle (Ψ = 0.18°) from a <110> axis. Long screw segments a/2<110> and short partial Shockley segments are arranged in the dislocation network obtained without any additional rotation at the highest twist angle (Ψ = 0.27°) from a <110> axis. In both cases, the long and short segments form elongated hexagonal patterns, which are accurately ordered in one set paving the <100> directions or randomly ordered in two perpendicular sets paving the <110> directions, respectively. The results are discussed taking into account the arangement of the surface miscut steps in the initial wafers before the bonding.