Si Substrates Research Articles

Enhanced Breakdown Voltage of AlGaN/GaN MISHEMT using GaN Buffer with Carbon-Doping on Silicon for Power Device

In recent years, Gallium Nitride (GaN)-based metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) have attracted interest in high-power and high-frequency applications. The breakdown mechanism in E-mode GaN MISHEMTs with carbon doping in the GaN buffer grown on a Silicon (Si) substrate (Sub) was investigated using technology computer-aided design simulations. Results showed that GaN MISHEMTs without Si Sub had a breakdown voltage (BV) of 600 V. However, after adding Si Sub to the GaN buffer layer, the electric field (EF) increased, creating a vertical breakdown through the total buffer thickness, therefore, BV was reduced to around 240 V. On the other hand, BV is increased to approximately >1100 V, and the Electric field is reduced after employing a carbon deep acceptor with the proper doping concentration in this device. The GaN MISHEMTs with Si Sub is presented as threshold voltage +1.5 V with transconductance of 700 mS/mm, which is an excellent result compared to GaN MISHEMTs without Si Sub. Eventually, the study device depicted higher BV performance compared to other C-doped GaN HEMT devices. This suggests that the designed GaN MISHEMTs device could effectively be used in power semiconductor devices with optimum performance.

Investigating the impact of physical vapour deposition of palladium on electron-irradiated silicon substrates

This study reports on the effect of resistive physical vapour deposition of Pd Schottky contacts on the defects observed in an irradiated n-type Si substrate. Deep-level transient spectroscopy (DLTS) was used in order to investigate the possible defects in Schottky diodes on the n-type Si. In this study the defects present where the diode was deposited first and then irradiated (“post irradiated”) were compared to those present where the substrate was irradiated first, and the Pd deposited after irradiation (“pre-irradiated”). In the post-irradiated material, the familiar radiation-induced defects were observed. However, in the pre-irradiated material, fourteen new defects were observed, with DLTS signatures differing from those of the defects in the post-irradiated diodes. The newly identified defects seemed to be specifically caused by the deposition of Pd contacts after irradiation of the substrate, as these defects were not observed when other metals such as Au, Ni, Al and Ag were deposited after irradiation. In this paper, we will refer to the observed effect that Pd deposition replaced the familiar radiation-induced defects in Si with the new set of defects as the “Pd effect”. Careful experiments ruled out annealing due to inadvertent heating of the sample during deposition as a possible cause. Care was taken to avoid all sources of contamination: The effect was observed for different sources of Pd and crucibles. This effect was inhibited by the presence of a thin intermediate layer of Pd or Au deposited before irradiation. We therefore conclude that the effect is only observed when Pd is deposited directly onto the irradiated Si surface. Out of the fourteen newly observed defects, four defects, with activation energy of 182, 220, 360 and 607 meV, had DLTS signatures corresponding to those of defects previously observed in Pd-containing Si. For the rest of the defects, no defects with similar DLTS signatures were found in literature. We therefore believe that the defects observed are produced by defect enhanced diffusion of Pd. Overall, the study enhances our understanding of defect behaviour in silicon-based devices, particularly under irradiation and metal deposition conditions, and reveals the unique properties and effects of Pd.

Impact of alternating precursor supply and gas flow on the LPCVD growth behavior of polycrystalline 3C-SiC thin films on Si

In this paper, we will provide information on the growth mechanism of 3C-SiC using alternating supply deposition (ASD). SiH4 and C3H8 were introduced successively in a low-pressure chemical vapor deposition (LPCVD) system at 1000 °C, forming a stoichiometric polycrystalline 3C-SiC thin film on Si substrates. We demonstrate the influence of different gas flow rates on thin film properties. In detail, altering the flow rates of the precursors and the carrier gas resulted in changes of the growth rate, the surface roughness, the crystal growth mechanisms as well as the crystal quality. Hydrogen inhibition and passivation are proposed to be the main effects influencing the growth behavior of ASD thin films. Applying ASD to grow 3C-SiC thin films with precursors from low to high flow rates resulted in a transition of different growth mechanisms influencing the surface roughness and grain size. Furthermore, we could prove that ASD is a cyclic step-by-step carbon-assisted redistribution of a prior deposited silicon film. This is shown by contact angle measurements of three differently terminated surfaces during the specific phases of one ASD cycle. High resolution transmission electron microscopy (HRTEM) analysis showed a continuous and homogenous thin film and confirmed the absence of silicon- or carbon-rich layers. ASD enables 3C-SiC thin films with customized properties for tailored micro electromechanical system (MEMS) applications.

The influence of substrate orientation on the magnetic behavior of nearly-stoichiometric Mn5Ge3 thin films: DFT calculations and experimental analysis

The Mn5Ge3 exhibits a wide range of fascinating properties such as high spin polarization up to 42 %, large spin diffusion lengths, near-room Curie temperature, and possible integration with Ge, GaAs, and Si substrates. The influence of substrate orientation on magnetic behavior has been investigated. The thin films studied present an in-plane magnetic reversal which is isotropic in samples grown on GaAs(111) and anisotropic in samples grown on GaAs(001). Another difference observed is a linear trend to saturation on the out-of-plane hysteresis loop in samples grown on GaAs(111), comparatively to samples grown on GaAs(001). To better understand this scenario, Density Functional Theory (DFT) calculations were conducted. The results indicate a ferromagnetic metallic ground state with properties that are consistent with the experimental results. The projected densities of states indicate that the main responsible for the magnetic moment observed in the Mn5Ge3 is the Mn-Mn interaction. The magnetic field distribution isosurfaces obtained from the DFT calculations offer a satisfactory explanation of the magnetic reversal experimentally observed, especially the in-plane magnetic behavior in samples grown on both GaAs(111) and GaAs(001) substrates. This work provides a theoretical-experimental approach that allows a deeper understanding of the magnetic anisotropy behavior under the influence of the crystallographic orientation of the substrate observed in nearly-stoichiometric Mn5Ge3 thin films, which is a good candidate for rare-earth free magnet in spintronic applications.

Materials’ properties of low temperature deposited Cu/W and Cu/Cr multilayer thin films using high power impulse magnetron sputtering

In this study, copper/tungsten (Cu/W) and copper/chromium (Cu/Cr) multilayers were created by stacking bilayer films in a 3:1 ratio, with layer thicknesses ranging from 400 to 800 nm, deposited on Si (100) substrates using high power impulse magnetron sputtering (HiPIMS). The microstructural and surface properties of these films were examined through x-ray diffraction, atomic force microscopy, and scanning electron microscopy. Electrical properties were assessed using a four-point probe, while mechanical properties were measured via nanoindentation. Both multilayer systems showed a decrease in the hardness accompanied by an increase in the elastic modulus with each stacking bilayer. The Cu/W system experienced a gradual hardness reduction (down to 19%), compared to the Cu/Cr system, which exhibited a similar decrease (14.5%). The Cu/W and Cu/Cr multilayer film samples consistently demonstrate a softer nature compared to their bilayer counterparts due to the influence of the underlying Cu soft layers. A distinctive surface smoothness in these multilayer systems correlates with the elastic modulus in a manner unlike that with hardness. These multilayer films also demonstrated altered electrical resistivity, enhancing our understanding and capabilities in fabricating films with an increased number of layers.

The Effect of the Barrier Layer on the Uniformity of the Transport Characteristics of AlGaN/GaN Heterostructures on HR-Si(111).

The high transport characteristics of AlGaN/GaN heterostructures are critical components for high-performance electronic and radio-frequency (RF) devices. We report the transport characteristics of AlGaN/GaN heterostructures grown on a high-resistivity (HR) Si(111) substrate, which are unevenly distributed in the central and edge regions of the wafer. The relationship between the composition, stress, and polarization effects was discussed, and the main factors affecting the concentration and mobility of two-dimensional electron gas (2DEG) were clarified. We further demonstrated that the mechanism of changes in polarization intensity and scattering originates from the uneven distribution of Al composition and stress in the AlGaN barrier layer during the growth process. Furthermore, our results provide an important guide on the significance of accomplishing 6 inch AlGaN/GaN HEMT with excellent properties for RF applications.

Separation of wafer bonding interface from heterogenous mismatched interface achieved high quality bonded Ge-Si heterojunction

In the realm of optoelectronic integration, silicon-based Ge bonding has attracted great attention due to its advantages in short-wave infrared response and low cost. However, owing to the inherent lattice mismatch and thermal mismatch between Ge and Si, the bonded Ge-Si heterogenous interfaces encountered problems of thermal instability and high interface states. Herein, an approach of separating the bonding interface from the heterogenous interface is proposed through inserting a Ge epitaxial layer (GeEL) between the Si substrate and Ge film. This separation modifies the bonding interface to a homogenous one, alleviating the massive mismatch stress and achieving film relaxation, enhancing bonding stability in all aspects. Moreover, during 850 °C annealing, GeEL is doped via diffusion hence realizes electric filed modulation, inhibiting the carrier recombination leakage current and trap assisted tunneling in this defect-rich layer. A Ge-Si heterogenous PIN diode prepared by this bonding method has achieved a remarkable low dark current density (1.33 mA/cm2), a low ideality factor (1.11), and a high on–off ratio (106), confirming the outstanding quality of the bonded heterojunction. This work provides great prospects for higher performance, larger scale and multi-functional Si-based heterogenous material device applications.

Flexible structural color label with tetra-mode iridescence in full three-dimensional space for sophisticated anti-counterfeiting

The attractive visual appearance provided by disordered surfaces has been proven, which demonstrates great anticounterfeiting potential. However, the real application is challenging due to complex processing and Si substrates. We fabricated flexible structural color anti-counterfeiting labels by printing ZnS spheres onto aluminized flexible films to form a disordered surface, resulting in specular-diffuse dual modes appearances. Especially, based on the directionality of Mie scattering, the diffuse mode displayed three-dimensional (3D) angle-dependent structural colors under ambient light and exhibited angle-sensitive dynamic structural colors in 3D space under the light source. The angle dependence of the specular mode and the 3D iridescent of the diffuse mode form a tetra-mode iridescence, which brings sophisticated anti-counterfeiting. The comprehensive color information is directly determined by the optical properties of ZnS and Al, which pose challenges for replication using alternative methods. Further, labels with multi-color dragon patterns were fabricated using ZnS spheres with different diameters, which greatly improves information security. More importantly, based on the tetra-mode, a verification method compatible with personal terminals has been developed, which can quickly identify authenticity.

Nanopatterning Induced Si Doping in Amorphous Ga2O3 for Enhanced Electrical Properties and Ultra-Fast Photodetection.

Ga2O3 has emerged as a promising material for the wide-bandgap industry aiming at devices beyond the limits of conventional silicon. Amorphous Ga2O3 is widely being used for flexible electronics, but suffers from very high resistivity. Conventional methods of doping like ion implantation require high temperatures post-processing, thereby limiting their use. Herein, an unconventional method of doping Ga2O3 films with Si, thereby enhancing its electrical properties, is reported. Ion-beam sputtering (500eV Ar+) is utilized to nanopattern SiO2-coated Si substrate leaving the topmost part rich in elemental Si. This helps in enhancing the carrier conduction by increasing n-type doping of the subsequently coated 5nm amorphous Ga2O3 films, corroborated by room-temperature resistivity measurement and valence band spectra, respectively, while the nanopatterns formed help in better light management. Finally, as proof of concept, metal-semiconductor-metal (MSM) photoconductor devices fabricated on doped, rippled films show superior properties with responsivity increasing from 6 to 433mAW-1 while having fast detection speeds of 861µs/710µs (rise/fall time) as opposed to non-rippled devices (377ms/392ms). The results demonstrate a facile, cost-effective, and large-area method to dope amorphous Ga2O3 films in a bottom-up approach which may be employed for increasing the electrical conductivity of other amorphous oxide semiconductors as well.

Enabling High‐Temperature Atomic‐Scale Investigations with Combinatorial Processing Platforms Using Improved Thermal SiO2 Diffusion and Reaction Barriers

AbstractInteractions at high temperatures between thin films and the Si substrate limit materials discovery using combinatorial processing platforms (CPPs). To overcome this, a diffusion and reaction barrier, SiO2, by thermal oxidation of Si tips is developed. The application of this diffusion barrier in CPPs for atomic‐scale investigations of new materials in atom probe tomography is reported. Thermal SiO2 layers (20 and 50 nm thick) are examined as barriers to separate coatings from Si tips. Pt is chosen as it easily forms silicides. CPPs are sequentially annealed in vacuum at 400 °C for 10 h, 600 °C for 2 h, and 800 °C for 2 h. The thermal SiO2 diffusion barrier remains stable and prevents intermixing at least up to 800 °C. Moreover, it provides improved film adhesion as dewetting of Pt on the oxide surface occurred at 800 °C instead of 600 °C without a thermal diffusion barrier. A comprehensive structural and chemical analysis of the Pt film, the thermal SiO2 layer, and their interfaces is performed using scanning and transmission electron microscopy, and atom probe tomography. As a result, the thermal SiO2 forms a stable barrier, even at the lowest thickness of 20 nm, avoiding the formation of Pt silicides, even at 800 °C.

Tuning the Ferromagnetic Resonance Frequency of Microstructured Permalloy Film on Flexible Substrate

The importance of flexible ferromagnetic films in the application of flexible spintronic devices and microwave magnetic devices underscores the necessity for an in‐depth understanding of the dynamic magnetic properties of these films. In particular, it is crucial to comprehend the regulation of the ferromagnetic resonance (FMR) frequency of flexible ferromagnetic films. This work outlines the preparation of periodic permalloy microstrip arrays with stripe domain on flexible PET films and applies them to linearly tune the FMR. The high‐frequency optical branch (5.17 GHz) and low‐frequency acoustic branch (2.89 GHz) are observed in the direction perpendicular (x‐direction) and parallel (y‐direction) to the microstrip, respectively. The Young's modulus mismatch between the PET film and permalloy layer leads to the directional distribution of local tension. This results in the enhancement of the Ht (219.4 Oe) required for the in‐plane uniform precession on the PET film, compared to that on the Si substrate (181.6 Oe). By adjusting the width and thickness of the permalloy microstrip, Ht can be adjusted linearly on the PET film. This flexible ferromagnetic film with linear regulation of FMR frequency presents a new option for the future development of flexible microwave detectors and filters.

Green Light from Red-Emitting Nanocrystals: Broadband, Low-Threshold Lasing from Colloidal Quantum Shells in Optical Nanocavities.

Spherical semiconductor nanoplatelets, known as quantum shells (QSs), have captured significant interest for their strong suppression of Auger recombination, which leads to long multiexciton lifetimes and wide optical gain bandwidth. Yet, the realization of benefits associated with the multiexciton lasing regime using a suitably designed photonic cavity remains elusive. Here, we demonstrate broadly tunable lasing from close-packed films of CdS/CdSe/CdS QSs deposited over nanopillar arrays on Si substrates. Wide spectral tuning of the stimulated emission in QSs with a fixed bandgap value was achieved by engaging single exciton (λX ∼ 634 nm), biexciton (λBX ∼ 627 nm), and multiple exciton (λMX ∼ 615-565 nm) transitions. The ensemble-averaged gain threshold of <N> ∼ 2.6 electron-hole pairs per QS particle and the low photonic cavity fluence threshold of ∼4 μJ/cm2 were attributed to Auger suppression. The tuning of the lasing emission closely aligns with our model predictions achieved by varying the array period while preserving mode confinement and quality (Q) factors. These results mark a notable step toward the development of colloidal nanocrystal lasers.

High performance of Ag/AlN/Si Schottky diode: Study of the DC sputtering power effect on its electrical properties

The DC sputtering power (DCSP) effect on the chemical composition, structural and electrical properties of Ag/AlN/Si Schottky diode was studied. The AlN films grown on Si substrate were examined by X-ray diffraction (XRD), Fourier Transformed Infra-Red (FTIR), and Raman spectroscopy. The analyzes by XRD, FTIR and Raman show stability at the level of the structure and the qualitative chemical composition of the AlN layer for DCSP of 200 W and 400 W. However, the quantity of chemical compounds on the surface of AlN is affected by this variation. From Current-Voltage (I-V) measurements, the ideality factor (n), barrier height (φb), and series resistance (Rs) were extracted by adopting Cheung functions. Diodes with an AlN interlayer elaborated at 400 W have good rectifying behavior with n, Rs and φb of 3.11, 1930 Ω, and 0.93 eV, respectively. The enhancement of the Ag/AlN/Si diode performance was attributed to the reduction of undesirable impurities in the Ag/AlN interface as well as the morphological improvement of the AlN layer. Capacitance-Voltage (C-V) measurements showed that carrier donor concentrations are strongly affected by DC sputtering power. The elaborate structures may provide new materials with electrical properties having a wide range of applications in electronics and photovoltaic field.

Electrochemical Deposition and Etching of Quasi-Two-Dimensional Periodic Membrane Structure.

In this paper, two experimental procedures are reported, namely electro-deposition in the ultrathin liquid layer and chemical micro-etching. Firstly, a large area quasi-two-dimensional periodic membrane with adjustable density is deposited on a Si substrate driven by half-sinusoidal voltage, which is composed of raised ridges and a membrane between the ridges. The smaller the voltage frequency is, the larger the ridge distance is. The height of a raised ridge changes synchronously with the amplitude. The grain density distribution of membrane and raised ridge is uneven; the two structures change alternately, which is closely related to the change of growth voltage and copper ion concentration during deposition. The structural characteristics of membrane provide favorable conditions for micro-etching; stable etching speed and microscope real-time monitoring are the keys to achieve accurate etching. In the chemical micro-etching process, the membrane between ridges is removed, retaining the raised ridges, thus a large scale ordered micro-nano wires array with lateral growth was obtained. This method is simple and controllable, can be applied to a variety of substrates, and is the best choice for designing and preparing new functional materials. This experiment provides a basis for the extension of this method.

Nonvolatile memory operations using intersubband transitions in GaN/AlN resonant tunneling diodes grown on Si(111) substrates

Nonvolatile memory using intersubband transitions and quantum-well electron accumulation in GaN/AlN resonant tunneling diodes (RTDs) is a promising candidate for high-speed nonvolatile memory operating on a picosecond timescale. This memory has been fabricated on sapphire(0001) substrates to date because of the high affinity between the nitride materials and the substrate. However, the fabrication of this memory on Si(111) substrates is attractive to realize hybrid integration with Si devices and nonvolatile memory and three-dimensional integration such as chip-on-wafer and wafer-on-wafer. In this study, GaN/AlN RTDs are fabricated on a Si(111) substrate using metal-organic vapor phase epitaxy. The large strain caused by the differences in the thermal expansion coefficients and lattice constants between the Si(111) substrate and nitride materials are suppressed by a growth technique based on the insertion of low-temperature-grown AlGaN and thin AlN layers. The GaN/AlN RTDs fabricated on Si(111) substrates show clear GaN/AlN heterointerfaces and a high ON/OFF ratio of &amp;gt;220, which are equivalent to those for devices fabricated on sapphire(0001) substrates. However, the nonvolatile memory characteristics fluctuate by repeated write/erase memory operations. Evaluation of the ON/OFF switching time and endurance characteristics indicates that the instability of the nonvolatile memory characteristics is caused by electron leakage through deep levels in the quantum-well structure. Possible methods for suppressing this are discussed with an aim of realizing high-speed and high-endurance nonvolatile memory.

Impact of Cationic Stoichiometry on Physical, Optical and Electrical Properties of SrTiO3 Thin Films Grown on (001)-Oriented Si Substrates.

In this study, we investigate the changes in the crystalline structure of MBE-deposited SrTiO3 layers on Si with different deviations from Sr/Ti stoichiometry as deposited but also after annealing at high temperatures (>600 °C). We show that as-grown 15 nm thick non-stochiometric SrTiO3 layers present surprisingly lower FWHM values of the (002) omega diffraction peak compared to fully stoichiometric layers of similar thickness. This can misleadingly point to superior crystalline quality of such non-stochiometric layers. However, thermal post-deposition anneals of these layers at temperatures up to 850 °C in oxygen show strong detrimental effects on the crystalline structure, surface and interface with the Si (001) substrate. On the contrary, the post-deposition anneals applied to the stoichiometric samples strongly improve the physical, optical and electrical properties of the epitaxial SrTiO3 thin films.

UV photodetectors based on W-doped ZnO thin films

W-doped ZnO thin films deposited on Si substrates with (100) orientation by sol–gel spin coating method at temperature 500 °C. W/Zn atomic ratio varies from 0% to 4%. Then, the UV detection performance analysis of p–n heterojunction UV photodetectors based on W-doped ZnO/Si is analyzed. The current–voltage curves of W-doped ZnO/Si are investigated in dark and exhibit diode-like rectifying behavior. Among doped ZnO/Si, sample with atomic ratio of W/Zn = 2% is the best candidate to study photodetector characteristics in UV range. The resulting device exhibits a rectification ratio RR of 5587 at ±5 V, a higher responsivity of 3.84 A W−1 and a photosensitivity value of 34 at 365 nm under 0.5 mW cm−2. The experimental findings reveal that the UV detection performance of the heterojunction-based photodetectors strongly dependent on the properties of metal oxide layer. The main goal of this work is to investigate the effect of W doping on the performance of ZnO/Si based photodetectors. Based on our results, it is observed that 2 at% of W dopant is the optimum amount of doping for high performance photodetector of ZnO:W/Si heterojunction thanks to the suppressed recombination ratio and enhanced carrier separation properties in the depletion zone.

BCl3/Cl2 plasma etching process to fabricate a ferroelectric gate structure for device integration

Despite the significant potential of ferroelectric devices in overcoming the challenges faced by conventional high-k-based CMOS devices owing to the scaling of CMOS processes, most ferroelectric devices are not implemented in practical circuits yet. For practical application, integrating them into a circuit is essential, and the development of a reliable etching process is crucial for the integration of individual devices into circuits. Therefore, this study proposes a process for etching hafnium zirconium oxide (HZO)-based gate stacks to fabricate a gate structure and integrate HZO-based devices into circuits. First, poly-Si/TiN/HZO/TiN/SiO2 was deposited on a Si substrate and etched via Cl2 and BCl3/Cl2 plasma etchings. Cl2 plasma etching was found to be less effective, whereas BCl3/Cl2 plasma etching exhibited a higher etching rate. The optimal etching time for the BCl3/Cl2 plasma at which the entire stack was successfully removed was 50 s. Furthermore, the optimal ratio of Ar:Cl2:BCl3 that resulted in minimal damage to the Si surface was determined to be 1:1:3. These results led to the successful formation of an HZO-based gate structure and provided the potential to integrate ferroelectric devices into the circuit, thereby enabling their practical utilization.

Low-power-consumption modulation of short-cavity DBR laser on SiO2/Si substrate

We developed short-active-length distributed Bragg reflector (DBR) lasers to reduce the power consumption of chip-to-chip optical interconnects. These lasers have buried bulk InGaAsP waveguides to increase the coupling efficiency between the active region and DBR to 99.79% from the 98.14% of our previous DBR lasers that had InP channel waveguides. We achieved continuous wave operation of 5- to 80-µm active-length DBR lasers and the 5-µm-long laser consumed 24 fJ/bit with a 10-Gbps NRZ signal. The threshold current of the 5-µm laser was 51 µA, which compares favorably to our previous 10-µm DBR lasers with a threshold current of 170 µA.

Characterization of GaN‐Based Nanopillar Light‐Emitting Diodes on Multicrystalline Si Substrates: Insights into Emitting‐Color Distribution Characteristics

In a previous study, GaN‐based nanopillars are grown vertically on a multicrystalline Si substrate by inserting (In)GaN steering crystals. In addition, blue‐green and white light‐emitting diodes (LEDs) are prepared on this substrate for the first time using a double heterotype p–n junction. Herein, the emission‐color distribution characteristics of this type of LED are analyzed in depth, and a related luminescence principle is proposed. Each nanopillar plus an electrode is considered a nanopillar LED, and the emission color of each nanopillar LED is inferred. The indium distribution in the InGaN active region is predicted based on the luminous color and corresponding spectra. Simultaneously, the morphology of related materials, electrical properties of LEDs, and chromaticity coordinates of luminous colors are analyzed and discussed.