Abstract
The outstanding catalytic property of cerium oxide (CeO2) strongly depends on the polaron formation due to the oxygen vacancy (V̈O) defect and Ce4+ to Ce3+ transformation. Temperature plays an important role in the case of polaron generation in CeO2 and highly influences its electrical transport properties. Therefore, a much needed attention is required for detailed understanding of the effect of temperature on polaron formation and oxygen vacancy migration to get an idea about the improvement in the redox property of ceria. In this work, we have probed the generation of polarons in CeO2 thin-film deposited on a silicon (Si) substrate using the resonance photoemission spectroscopy (RPES) study. The RPES data show an increase in polaron density at the substrate-film interface of the thermally annealed film, indicating the formation of an interfacial Ce2O3 layer, which is, indeed, a phase change from the cubic to hexagonal structure. This leads to a modified electronic band structure, which has an impact on the capacitance-voltage (C-V) characteristics. This result nicely correlates the microscopic property of polarons and the macroscopic transport property of ceria.
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