Deviations from the classical two-dimensional plasmon dispersion are observed at high wavevectors q in electron inversion layers on Si(100) MOS-capacitors with periodically structured gate electrodes. For high inversion electron densities ( n s > 6 × 10 12cm −2) an unexpected mass enhancement is extracted from the plasmon dispersion. In addition the plasmon linewidth is found to be significantly larger than predicted from transport experiments. On the same samples non-vertical intersubband resonance transitions are observed with radiation incident normal to the interface. They are excited by an electric field component normal to the surface that is induced by the structured gate electrode.