Abstract
Top-gated metal–oxide–semiconductor (MOS) capacitor test structures were fabricated with 30nm HfO2 and Al2O3 thin films by atomic layer deposition (ALD) on surface-functionalized, bulk molybdenum disulfide (MoS2), and characterized with C–V and I–V measurements. The C–V results showed significantly different behavior for MoS2 samples compared to conventional Si MOS capacitors, where the area dependence, frequency dependence, and hysteresis results demonstrate the possibility of different properties of high-k dielectrics on MoS2. The C–V frequency dispersion suggests the existence of defects in the interfacial region of the high-k/MoS2.
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