Abstract
Radiation induced oxide and interface trapping characteristics in Al/HfO 2 /Si MOS capacitor under 60Co gamma ray are studied in this article. We discovered positive oxide trapped charge in the HfO 2 /Si system after gamma-irradiation with different total dose. Post-annealing process can reduce the radiation induced trapped charge density in the HfO 2 /Si system, and SiO 2 layer between HfO 2 and Si can greatly reduce the interface trapped charge density. Moreover, we discovered that oxygen vacancy is the dominant radiation induced defect in bulk HfO 2 , and silicon dangling bond and silicon suboxide are main interface defects related to the radiation induced interface trapping.
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