Short-circuit Current Density Research Articles

Toward improving the performance of Cu2ZnSnS4-based solar cells with Zr, W or sulfurized layers at the SnO2:F/Cu2ZnSnS4 rear interface

The photovoltaic performance of Cu2ZnSnS4 (CZTS)-based thin film solar cells with transparent back contacts is mainly constrained by the ohmic loss due to degradation of the back contacts at high temperatures required for the growth of the CZTS absorbers. This work has attempted to use ultrathin Zr and W interlayers at the SnO2:F (FTO)/CZTS interface with the purpose of improving the ohmic properties of FTO and hence the performance of solar cells. 20 nm thick Zr and W layers were coated on FTO using direct current magnetron sputtering, followed by heating at 550 °C in a sulfur atmosphere for some of the samples. Inclusion of Zr and W interlayers compromised the transmittance of the FTO back contact, however heating of the samples in a sulfur atmosphere improved the transmittance to values comparable to or better than those of un-heated FTO. Furthermore, heated W/FTO showed a significant improvement in electrical conductivity as observed from Hall effect measurements. To make complete solar cells, CZTS absorber, buffer (CdS) and window (i-ZnO/ZnO:Al) layers were sequentially deposited on the un-heated FTO, Zr/FTO, W/FTO and Mo back contacts. Glow discharge optical emmision spectroscopy confirmed that Zr and W did not diffuse into the absorber and also prevented Na diffusion into the absorber. From the scanning electron microscopy cross sectional analysis, an impovement in the absober grain size and a clear junction between the absorber and FTO with W interlayer were observed. Grazing incident X-ray diffractometry confirmed the polycrystalline nature of the CZTS thin films and indicated the presence of other phases, particularly SnS2. On the resulting solar cell parameters, the inclusion of a W interlayer reduced the series resistance from 4.5 Ωcm to 3.7 Ωcm2. An improvement in short circuit current density (JSC) is also observed, enhancing the efficiency of the solar cells with CZTS/W/FTO to 3.1 % compared to that with CZTS/Mo at 2.7 % and CZTS/FTO at 3.0 %. W was found to improve the external quantum efficiency response and JSC of the solar cells for both backside and frontside light illumination. On the other hand, inclusion of a Zr interlayer (Zr/FTO) only slighlty improved the open circuit voltage, but compromised the JSC compared to FTO and W/FTO back contacts. Thus, the findings of this study demonstrate the prospect for improving the performance of the CZTS-based thin film solar cells through the inclusion of ultrathin Zr and W interlayers between the FTO back contact and CZTS absorber.

Device modelling and numerical analysis of high-efficiency double absorbers solar cells with diverse transport layer materials

Recently, a lot of focus has been placed on cesium lead iodide (CsPbI3) since it is considered a potentially useful inorganic halide perovskite with improved stability. Moreover, another potential absorber material is the mixed chalcogenide CZTSSe, which is abundant on Earth, cheap, environmentally acceptable, and has excellent photovoltaic performance. This research numerically simulated a novel double absorber solar cell structure employing CsPbI3 and CZTSSe absorbers in the active layer in SCAPS-1D. The current study analyses the effects of various electron and hole transport materials, back contact material's work functions, working temperatures, variations in defect concentration, and absorber thickness on the performance of photovoltaic devices. After researching a variety of distinct arrangements of double absorber solar cells, it was realized that the FTO/STO/CsPbI3/CZTSSe/NiO/W cell configuration exhibited the best overall performance with an open circuit voltage (Voc) at 1.0207 V, a short circuit current density (Jsc) at 41.815426 mA/cm2, Fill Factor (FF) at 87.50 %, and a Power Conversion Efficiency (PCE) at 37.35 %. The modeling of the device showed that a thickness of around 1.4 µm for the CZTSSe absorber is optimal. This simulation shows that when the working temperature in the cell and the defect concentration in the absorber increase, the efficiency of the device reduces uniformly, and the device is stable at 300 K temperature. In conclusion, if the material's work function is greater than 5.20 eV, then it is suitable for use as an anode.

Comparative performance analysis of poly (3-hexylthiophene-2, 5-dial) and [6,6]-phenyl-C61 butyric acid methyl ester-based organic solar cells in bulk-heterojunction and bilayer structure using SCAPS

This work is concerned with the design and photovoltaic performance study of organic semiconducting materials-based solar cells using a SCAPS simulator. Organic solar cells are one form that absorbs light and produces electricity. They exhibit high power conversion efficiency, low manufacturing costs, lightweight, and flexibility which makes them a promising technology for renewable energy. We developed and designed organic solar cell devices with the structure ITO/PEDOT: PSS/P3HT: PCBM/PFN-Br/Al for bulk-heterojunction structure and ITO/PEDOT: PSS/P3HT: PCBM/PFN-Br/Al for bilayer structure where PEDOT: PSS and PFN-Br were used as hole and electron transporting layers (HTL and ETL) respectively. The short circuit current density versus voltage (J-V) characteristics as well as photovoltaic parameters namely open circuit voltage (VOC), short circuit current density (JSC), fill factor (FF), and power conversion efficiency (PCE) have been examined. In addition, the quantum efficiency (QE) of the two structures has been also studied. The effectiveness of the photovoltaic simulated systems has also been attempted to be enhanced by varying the absorber layer's thickness for both architectures. Later, this turned out that variations in the band gap of the absorber layer had an impact on the factors that determined how well solar cells performed. It has been found that the simulated bulk-heterojunction device exhibits 20.43% PCE whereas 3.52% PCE has been calculated from the simulated bilayer device.

Utilization of natural dyes extracted from mustard flower (Genus: Brassica, Species: Napus) as photosensitizer for DSSC: Experimental and computational studies

Dye-sensitized solar cells (DSSC) are considered as one of the most promising photovoltaic technologies, while exploring alternatives to traditional silicon-based solar cells. Dye sensitizer is a very important component of DSSC and the use of natural dyes in these cells is a promising development for this technology, as it has non-hazardous impact on the environment. This work reports the new natural dye extracted from Brassica Napus flower petals and used as sensitizer in TiO2 based DSSC. UV–Vis spectra showed the presence of carotenoid and flavonoid pigments along with broad absorption in dye loaded TiO2. FITR revealed functional groups in the Brassica Napus dye extract. Mass spectroscopy was used to find major constituents present in extract. With the natural Brassica Napus sensitizer and TiO2, photovoltaic performance results viz. conversion efficiency (ɳ%) 0.062, short circuit current density (Jsc) 0.45 mA/cm2, open circuit voltage (Voc) 0.260 V and fill factor (FF) 0.52 were observed. Further, HOMO-LUMO levels of constituents present in Brassica Napus have been measured via CV measurements and compared with relative energetic obtained by computational studies. The transport characteristics revealed from EIS studies were used to rationalize the observed photo-voltaic performance of the DSSC.

Numerical study of copper antimony sulphide (CuSbS2) solar cell by SCAPS-1D

Copper antimony sulphide thin films are promising, less toxic, and more absorbent material in the world, and they would be good to be applied in photovoltaic energy production. To better operations of copper antimony sulphide (CuSbS2) photovoltaic cells, this paper uses a solar cell capacitance simulator (SCAPS-1D) to simulate and analyze photovoltaic properties. This article examines different thicknesses of fluorine-doped tin oxide (FTO), cadmium sulphide (CdS), carbon (C), and CuSbS2, as well as the defect and dopant concentration in the CuSbS2 photoactive layer of the photovoltaic cell structure glass/FTO/n-CdS/p-CuSbS2/C/Au. Optimum thicknesses of CuSbS2 is 300 nm, carbon hole transport layer (HTL) is 50 nm, and for n-CdS electron transport layer (ETL) is 100 nm, giving open circuit Voltage (Voc) of 0.9389 V, short circuit current density (Jsc) of 28.32 mA/cm2, fill factor (FF) of 60.8% and solar cell efficiency of 16.17%. The increase in defects causes a decrease of carrier lifetime resulting in to decrease in diffusion length and the optimum absorber layer doping concentration was found to be 1018 cm−3.

Practical Jsc Limits for SHJ Devices: Insights From Modelling

Modern industrial silicon heterojunction (SHJ) solar cells are increasingly limited by the short-circuit current density (Jsc) and there is a strong interest in understanding how much novel approaches such as window layers, novel transparent conductive oxides (TCOs) and anti-reflection coatings (ARCs) could improve the Jsc of SHJ solar cells. In this work, the practical Jsc limits of SHJ solar cells are determined using a carefully calibrated ray-tracing model, validated using empirical data from in-house solar cells as well as recently published high-efficiency front-and-back contacted (FAB) SHJ solar cells. The model is then further refined to obtain a detailed Jsc loss breakdown of the latest record efficiency FAB SHJ solar cells, for which there are no published Jsc loss breakdowns. Notable advances made in these advanced solar cells with regards to window layers, TCOs and ARCs at the cell level are analysed. Based on the magnitude of impact on the solar cell Jsc, the most critical factors for achieving high-Jsc SHJ solar cells are identified and ranked. Allowing for additional improvements and combining the best approaches identified, an estimate of the practical upper limit of Jsc for FAB SHJ solar cells is determined to be 41.81 mA/cm2. This work serves as a useful reference for the current state of play for Jsc improvements in SHJ solar cells, and highlights practical pathways and issues for improving commercial SHJ solar cells.

Bulk Heterojunction or Layer‐by‐Layer Structure PM6:L8‐BO Based Polymer Solar Cells Exhibiting an Efficiency of 17.84 % or 18.43 %

AbstractTwo kinds of polymer solar cells (PSCs) were fabricated with polymer donor PM6 and small molecule non‐fullerene acceptor L8‐BO as accepted based on bulk heterojunction (BHJ) or layer‐by‐layer (LbL) structure. The power conversion efficiency (PCE) of 18.43 % and 17.84 % can be achieved from the PSCs based on BHJ and LbL structure, respectively. Two kinds of PSCs exhibit the same open circuit voltage (VOC) of 0.88 V, which can be well explained from the same donor and acceptor materials and the same electrodes. The LbL based PSCs exhibit a relatively large short circuit current density (JSC) of 26.97 mA cm−2 and fill factor (FF) of 77.64 % in comparison with JSC of 26.64 mA cm−2 and FF of 76.07 % for BHJ based PSCs. The relatively high PCE of LbL based PSCs should be attributed to the sufficient exciton dissociation and charge collection efficiency, as well as the more balanced charge transport, which can be confirmed from the photogenerated current density dependence on the effective bias. This work demonstrates that layer‐by‐layer structure may have great potential in preparing highly efficient PSCs.

Metasurface absorber based single junction thin film solar cell exceeding 30% efficiency.

In this article, we report, as per our knowledge, for the first time, a thin film single junction solar cell with a metasurface absorber layer directly incorporated. We have used an interconnected dual inverted split ring resonator pattern in the InAsP absorber layer. The structure eliminated patterns of conventional metals, such as silver, aluminum, and gold, from the active layer, a common drawback in conventional solar absorbers, hindering their direct integration into solar cells. Optical simulation results show a peak ideal short circuit current density of 76.23mA/cm2 for the meta-absorber structure under solar illumination. This current is the highest among previously reported absorbers based on Group IV materials and III-V compounds, overcoming the low solar absorption of such metasurfaces. The final proposed solar cell structure combines this meta-absorber layer with traditional efficiency enhancement methods namely anti-reflecting coating, textured back reflector, and transparent top electrode. This novel single junction structure shows a solar absorption efficiency of 97.86% and a power conversion efficiency of 30.87%, the highest for III-V solar cells. Our device proves the ability of metasurface absorber layers to produce high-efficiency solar cells and is expected to pave the way for integrating novel meta-devices into state-of-the-art photovoltaic devices, aiding the global transition towards clean energy sources.

Ultra-broadband and wide-angle plasmonic light absorber based on all-dielectric gallium arsenide (GaAs) metasurface in visible and near-infrared region

High-performance and cost-effective broadband light absorbers are crucial for various optical applications, including solar energy harvesting, thermophotovoltaic systems, and integrated photoelectric devices. In this study, an ultra-broadband and wide-angle plasmonic light absorber (PLA) based on an all-dielectric gallium arsenide (GaAs) metasurface in the visible and near-infrared regions is proposed and numerically investigated. The unit-cell of the proposed PLA is consisted of all-dielectric GaAs cylinder resonator (CR) adhered on an ultra-thin GaAs spacer layer backed with a tungsten (W) substrate. Numerical simulation results show that the absorption peak of the proposed PLA is up to 99.85 %, 99.9 % and 99.98 % at 0.452 μm, 0.712 μm and 1.596 μm, respectively. In addition, the ultra-broadband strong absorption of over 90 % also can be achieved from 0.39 μm to 2.09 μm with a relative bandwidth of 137.1 %. The ultrabroadband strong absorption of the proposed PLA is further demonstrated by the equivalent circuit model (ECM), which displays excellent agreement with the results of the full-wave numerical simulation performed using the finite element method (FEM). The simulated electromagnetic (EM) field distributions reveal that the ultra-broadband strong absorption of the designed PLA is mainly from the excited propagating surface plasmon (PSP), located surface plasmon (LSP), cavity resonance modes combined with coupling effect between adjacent CRs. The proposed PLA is also polarization-insensitive and wide incident angles for both transverse electric (TE) and transverse magnetic (TM) modes. The absorption properties of the designed PLA can be adjusted by varying geometric parameters of the unit-cell. The PLA achieves a remarkable short-circuit current density of over 64.75569 mA/cm2 and exhibits nearly perfect solar energy trapping due to the effective coupling of multiple resonances, resulting in enhanced photovoltaic performance. Thus, the proposed PLA can be potential application in the photodetectors, thermal imaging, and solar energy harvesting devices.

Pyrrole-Based Fully Non-fused Acceptor for Efficient and Stable Organic Solar Cells.

Organic solar cells (OSCs) are still suffering from the low light utilization and unstable under ultraviolet irradiation. To tackle these challenges, we design and synthesize a non-fused acceptor based on 1-(2-butyloctyl)-1H-pyrrole as π-bridge unit, denoted as GS70, which serves as active layer in the front-cell for constructing tandem OSCs with a parallel configuration. Benefiting from the well-complementary absorption spectra with the rear-cell, GS70-based parallel tandem OSCs exhibit an improved photoelectron response over the range between 600-700 nm, yielding a high short-circuit current density of 28.4 mA cm-2. The improvement in light utilization translates to a power conversion efficiency of 19.4 %, the highest value among all parallel tandem OSCs. Notably, owing to the intrinsic stability of GS70, the manufactured parallel tandem OSCs retain 84.9 % of their initial PCE after continuous illumination for 1000 hours. Overall, this work offers novel insight into the molecular design of low-cost and stability non-fused acceptors, emphasizing the importance of adopting a parallel tandem configuration for achieving efficient light harvesting and improved photostability in OSCs.

Pressure-Driven Piezoelectric Sensors and Energy Harvesting in Biaxially Oriented Polyethylene Terephthalate Film.

This study reports the possibility of using biaxially oriented polyethylene terephthalate (BOPET) plastic packaging to convert mechanical energy into electrical energy. Electricity is generated due to the piezoelectricity of BOPET. Electricity generation depends on the mechanical deformation of the processing aids (inorganic crystals), which were found and identified by SEM and EDAX analyses as SiO2. BOPET, as an electron source, was assembled and tested as an energy conversion and self-powered mechanical stimuli sensor using potential applications in wearable electronics. When a pressure pulse after pendulum impact with a maximum stress of 926 kPa and an impact velocity of 2.1 m/s was applied, a voltage of 60 V was generated with short-circuit current and charge densities of 15 μAcm-2 and 138 nCm-2, respectively. Due to the orientation and stress-induced crystallization of polymer chains, BOPET films acquire very good mechanical properties, which are not lost during their primary usage as packaging materials and are beneficial for the durability of the sensors. The signals detected using BOPET sensors derived from pendulum impact and sieve analyses were also harvested for up to 80 cycles and up to 40 s with short-circuit voltages of 107 V and 95 V, respectively. In addition to their low price, the advantage of sensors made from BOPET plastic packaging waste lies in their chemical resistance and stability under exposure to oxygen, ultraviolet light, and moisture.

Carbon fibre reinforced triboelectric nanogenerator for self-powered sporting events monitoring

Porous materials such as metal-organic frameworks (MOFs) are promising platforms for the design of highly efficient and economical triboelectric nanogenerators (TENGs) due to their extremely high surface area, tunable pore size, large porosity, and flexible functionality. In this report, Co2+ and Ni2+ doped MOF-74 triboelectric active materials were synthesized in situ on the surface of carbon cloth (CoNi-MOF@CC) via a simple one-step solvothermal method. The as-fabricated TENG (C-TENG) is not only lightweight and wear-resistant, but also shows an open circuit voltage and a short circuit current density of as high as 108.6 V and 4.11 mA/m2, respectively. In addition, by introducing 1N4007 diodes on the back of CoNi-MOF@CC as energy collector, an excellent electrical output performance of output voltage up to 4500 V and output current density up to 2.84 mA/m2 was thus obtained, which is capable powering directly a one-watt lamp for reading at night. Furthermore, self-powered fencing score statistics system and an edge ball judgement system were developed on the base of the as-designed C-TENG for training guidance and real-time competition assistance, which promote the application of TENGs in intelligent sports industry by providing a new way to improve the fairness of sports.

Improved Photovoltaic Performance of Inverted Two-Dimensional Perovskite Solar Cells via a Simple Molecular Bridge on Buried Interface.

NiOx-based two-dimensional perovskite solar cells (2D-PSCs) have the advantages of low fabrication temperature, suitable energy level matching, suppressed hysteresis, and superior stability, while the poor interfacial contacts between NiOx and perovskite layers limit the perovskite film growth and charge transfer. Herein, a simple molecule, urea, was used as a molecular modifier to form bifacial passivation on the buried interface of NiOx/perovskite, resulting in better interfacial contact and efficient bifacial passivation. We demonstrated that efficient bifacial passivation mainly comes from strong interactions between urea and NiOx or perovskite, which make urea a molecular bridge for smoother charge transfer. Moreover, urea can regulate the ratio of Ni3+/Ni2+, therefore boosting the conductivity of NiOx, and adjust the morphology of the NiOx film for better 2D-perovskite crystal growth. Besides, urea also passivates the bifacial defect states of both NiOx and perovskite film, yielding reduced defect density of the perovskite film and superior charge transfer on the buried interface. Consequently, inverted 2D-PSCs with urea modification proved significant improvements in short-circuit current density and fill factor, resulting in improved power conversion efficiency from 14.64 to 16.84% with better stability in air.

High-performance nonfullerene polymer solar cells based on chlorinated quinoxaline copolymer with a high short-circuit current density

In organic solar cells, the absorption range and extinction coefficient of the active layer not only affect the charge separation and carrier transfer efficiency of excitons, but also influence the JSC, and thus the device efficiency. Herein, an efficient nonfullerene polymer solar cells (NF–PSCs) based on a medium-bandgap (MBG) polymer donor PBDTTS-TClQx comprising chlorinethiophene quinoxaline (Qx) unit and a small molecule nonfullerene acceptor (SM-NFA) Y6 is developed. The PBDTTS-TClQx shows a strong absorption in the wavelength region of 330∼750 nm with an optical band gaps (Egopt) of 1.68 eV, which is well complementary with that of Y6 (1.33 eV) and facilitates achieving of high short-circuit current (JSC) in PSCs. As a result, the PBDTTS-TClQx:Y6-based PSCs achieved a power conversion efficiency (PCE) of 14.28% with a JSC of 25.9 mA cm−2. The JSC of 25.9 mA cm−2 achieved is among the highest reported for Qx-based polymer donors in PSCs.

Electrochemical migration behavior between Cu and Ag under a thin electrolyte layer containing chloride

PurposeThe purpose of this paper is to investigate the effects of chloride ion concentration and applied bias voltage on the electrochemical migration (ECM) behavior between Cu and Ag under an NaCl thin electrolyte layer (TEL).Design/methodology/approachA self-made experimental setup for the ECM behavior between Cu and Ag was designed. An HD video measurement microscopy was used to observe the typical dendrite/corrosion morphology and pH distribution. Short-circuit time (SCT), short-circuit current density and the influence of the galvanic effect between Cu and Ag on their ECM behavior were studied by electrochemical tests. The surface morphology and composition of dendrite were characterized by FESEM/EDS.FindingsThe SCT increased with increasing NaCl concentration but decreased with increasing applied bias voltage, and the SCT between Cu and Ag was less than that between Cu and Cu because their galvanic effect accelerated the dissolution and migration of Cu. When NaCl concentration was less than or equal to 6 mmol/L, cedar-like dendrite was formed, whereas no dendrite formed and only precipitation occurred at high chloride ion concentration (100 mmol/L). The composition of the dendrite between Cu and Ag was copper.Research limitations/implicationsThe significance of this study is to clarify the ECM failure mechanism of printed circuit board (PCB) with an immersion silver surface finish (PCB-ImAg).Practical implicationsThis study provides a basic theoretical basis for the selection of protective measures and metal coatings for PCB.Social implicationsThe social implication of this study is to predict the service life of PCB.Originality/valueThe ECM behavior of dissimilar metals under a TEL was investigated, the influence of the galvanic effect between them on their ECM was discussed, and the SCT increased with increasing NaCl concentration.

A Long Life Moisture-Enabled Electric Generator Based on Ionic Diode Rectification and Electrode Chemistry Regulation.

Considerable efforts have recently been made to augment the power density of moisture-enabled electric generators. However, due to the unsustainable ion/water molecule concentration gradients, the ion-directed transport gradually diminishes, which largely affects the operating lifetime and energy efficiency of generators. This work introduces an electrode chemistry regulation strategy into the ionic diode-type energy conversion structure, which demonstrates 1240h power generation in ambient humidity. The electrode chemical regulation can be achieved by addingCl-. The purpose is to destroy the passivation film on the electrode interface and provide a continuous path for ion-electron coupling conduction. Moreover, this device simultaneously satisfies the requirements of fast trapping of moisture molecules, high rectification ratio transport of ions, and sustained ion-to-electron current conversion. A single device can deliver an open-circuit voltage of about 1V and a peak short-circuit current density of 350µA cm-2. Finally, the first-principle calculations are carried out to reveal the mechanism by which the electrode surface chemistry affects the power generation performance.

Introducing ZnMgO quantum dots to enhance optoelectrical characteristics of organic photovoltaics via light downconversion

In this study, we developed organic photovoltaics (OPVs) with a photoactive layer based on the bulk heterojunction structure of the high-performance polymer PM6 and nonfullerene acceptor BTP-eC9. Zinc magnesium oxide (ZnMgO) quantum dots (QDs) were introduced into a zinc oxide sol–gel solution as the electron transport layer. The ZnMgO QDs absorb ultraviolet (UV) light and emit visible light (400–700 nm). The absorption area and external quantum efficiency of the fabricated OPV device were enhanced by converting UV light into visible light. Accordingly, the short-circuit current density and fill factor of the OPVs increased from 24.8 to 25.3 mA cm−2 and from 74.0 % to 74.8 %, respectively, and as a result, the power conversion efficiency of the OPVs increased from 15.1 % to 15.7 %. The absorption and photoluminescence emission and the particle size of the synthesized ZnMgO QDs were determined using UV–visible spectroscopy, photoluminescence spectroscopy, and high-resolution transmission electron microscopy.

Indoline‐Based Dopant‐Free Hole Transporting Material with Edge‐on Orientation for High Performance Perovskite Solar Cells

Molecular stacking and orientation are of great importance in regulating optoelectronic properties. Typically, the face‐on orientation of hole transporting materials (HTMs) is considered to be a prerequisite for the realization of high efficiency perovskite solar cells (PSCs). Herein, a small molecule HTM, BDT‐p‐IDN, is developed with edge‐on orientation by replacing the terminal group from diphenylamine to indoline unit. Remarkably, the PSCs device based on dopant‐free BDT‐p‐IDN exhibits an efficiency of 23.28%, which is comparable to that of its face‐on control BDT‐DPA‐F. Compared to BDT‐DPA‐F, BDT‐p‐IDN has stronger interaction with the perovskite (PVK) film and therefore stronger hole extraction and defect passivation capabilities, resulting in an increased short circuit current density and improved efficiency. The results indicate that edge‐on orientation could be a powerful way for HTMs to realize efficient PSCs.

Carboxy-substituted D-π-A arylated chalcones: Synthesis, photophysical properties and preliminary evaluation as photosensitizers for DSSCs

Chalcones are versatile molecules with potential use in various fields and technologies. The judicious choice of chalcones’ building blocks allows the design of compounds with different properties and applications. In the present work, four highly conjugated carboxy-substituted chalcones with D-π-A architecture were synthesized aiming their evaluation as photosensitizers for dye-sensitized solar cells (DSSCs). In their architecture, electron-rich aldehydes were used as precursors of the donor units, and carboxylate or cyanoacrylate acceptor units were bonded to the acetophenone portion. The compounds presented intense UV–vis absorptions (ε in the order of 104 mol L−1 cm−1) centered between 322 and 429 nm, and blue to yellow fluorescence, with quantum yields ranging from less than 0.01 to 0.35. These chalcones were evaluated as photosensitizers for DSSCs, displaying short-circuit current density (ISC) ranging from 0.18 to 0.36 mA cm−2, open circuit voltage (Voc) from 0.52 to 0.56 V, fill factor (FF) between 54 and 67%, and power conversion efficiency from 0.05 to 0.13%. The two best performances were obtained with photosensitizers 6a and 7b which display the pairs dimethylaminophenyl/carboxylate and vanillin/cyanoacrylate as the donor and acceptor/anchoring units, respectively.

Organic-inorganic hybrid material for hole transport in inverted perovskite solar cells.

Hole mobility is critical to the power conversion efficiencies of perovskite solar cells (PSCs). Organic small-molecule hole-transporting materials (HTMs) have attracted considerable interest in PSCs due to their structural flexibility and operational durability, but they suffer from modest hole mobility. On the other hand, inorganic HTMs with good hole mobility are inflexible in structural variation and exhibit unsatisfactory cell efficiency. In this study, a ligand BT28 and its zinc-based coordination complex BTZ30 were synthesized, characterized, and investigated as HTMs for PSC applications. The mixed-halide perovskites can be grown uniformly with large crystalline grains on both HTMs, which exhibit similar optical and electrochemical properties. However, it was discovered that the BTZ30-based solar cell exhibited an open-circuit voltage of 1.0817 V and a high short-circuit current density of 23.1392 mA cm-2 with a champion power conversion efficiency of close to 20 %. The performance difference between the two HTMs can be attributed to the difference in their hole mobilities, which is 63.31 % higher for BTZ30 than BT28. The comparison of non-metal and metal HTMs revealed the importance of considering hybrid structures to overcome some shortcomings associated with organic and inorganic HTMs and achieve high-performance PSCs.