ZnS is widely used in the photocatalytic decomposition of water to produce hydrogen due to its fast electron-hole pair generation and high negative potential. However, its absorption in the visible region is poor due to its wide band gap, and it has serious photogenerated carrier recombination problems. Herein, a shallow impurity energy level was introduced by doping the ZnS lattice with Cd. Due to its presence, electrons trying to return to the valence band are trapped and excited twice, suppressing the recombination of photogenerated carriers and greatly improving electron utilization. The Cd1.5-ZnS possesses a hydrogen production rate as high as 85722.20 μmol/g, which is 17 times higher than pure ZnS. Meanwhile, Cd1.5-ZnS has a narrower forbidden band and superior visible light absorption, and the serious photocorrosion problem of ZnS has been suppressed. This study provides a viable approach for the synthesis of photocatalysts with adjustable band gaps and enhanced hydrogen precipitation efficiency.