Abstract
Low‐temperature photoluminescence spectroscopy enables the determination of the dopant concentration of shallow impurities in silicon. This measurement method is therefore well suited for identifying and analyzing dopants (intentional impurities in silicon). A method is presented which allows the determination of the boron concentration in silicon in a range from to at temperatures from 4.2 to 20 K with increased temperature accuracy. This method requires only one calibration function for the photoluminescence intensity ratio of the boron‐bound exciton and the free exciton . The measurement temperature is obtained from the intrinsic silicon photoluminescence line of free excitons () using a fitting method, which distinguishes the and components of the free exciton peak. The determined calibration function is . The obtained exciton binding energy to boron, , agrees well with literature data.
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