Semiconductor Nanolasers Research Articles

Threshold Gain Reduction in Tandem Semiconductor Nano-Lasers

It is shown that a significant reduction in the threshold gain of electrically pumped semiconductor nano-lasers may be achieved in bridge-connected tandem semiconductor nano-lasers. Optimization of the design is achieved by exploring the impact of bridge length and width on the threshold gain. In addition, a detailed examination is also made of the emission patterns of the structure. It is found that a trade-off emerges between threshold gain and beam quality where multi-lobed far field emission may be associated with the lowest threshold gains.

Minimal-gain-printed silicon nanolaser.

While there have been notable advancements in Si-based optical integration, achieving compact and efficient continuous-wave (CW) III-V semiconductor nanolasers on Si at room temperature remains a substantial challenge. This study presents an innovative approach: the on-demand minimal-gain-printed Si nanolaser. By using a carefully designed minimal III-V optical gain structure and a precise on-demand gain-printing technique, we achieve lasing operation with superior spectral stability under pulsed conditions and observe a strong signature of CW operation at room temperature. These achievements are attributed to addressing both fundamental and technological issues, including carrier diffusion, absorption loss, and inefficient thermal dissipation, through minimal-gain printing in the nanolaser. Moreover, our demonstration of the laser-on-waveguide structure emphasizes the integration benefits of this on-demand gain-printed Si nanolaser, highlighting its potential significance in the fields of Si photonics and photonic integrated circuits.

The Onset of Lasing in Semiconductor Nanolasers

AbstractNanolasers based on emerging dielectric cavities with deep sub‐wavelength confinement of light offer a large light‐matter coupling rate and near‐unity spontaneous emission factor, . These features call for reconsidering the standard approach to identifying the lasing threshold. Here, a new threshold definition is suggested, taking into account the recycling process of photons when is large. This threshold reduces to the classical balance between gain and loss in the limit of macroscopic lasers, but qualitative as well as quantitative differences emerge for nanolasers. In particular, this new threshold identifies the onset of a transition regime, where the quantum statistics of the emitted light evolve into the Poissonian statistics of a coherent state. It is shown that the threshold with photon recycling consistently marks the onset of the change in the second‐order intensity correlation, , toward coherent laser light, irrespective of the laser size and down to the case of a single emitter. In contrast, other threshold definitions may well predict lasing in light‐emitting diodes. An overview of different threshold definitions proposed in the literature is provided and their predictions are compared when going from macroscopic to microscopic lasers.

Optical Frequency Comb Generation in Gain Switched Semiconductor Nanolasers With Optical Injection

Optical Frequency Comb Generation in Gain Switched Semiconductor Nanolasers With Optical Injection

Random Numbers Generated Based on Dual-Channel Chaotic Light

This paper presents a chaotic system based on novel semiconductor nanolasers (NLs), systematically analyzing its chaotic region and investigating the influence of key parameters on the unpredictability of chaotic output. This study found that under optical feedback conditions, NLs generate chaos across a wide range of feedback parameters, with the highly unpredictable region completely overlapping with the chaotic region. Further injection into the slave lasers enhances the chaotic output, expanding the range of unpredictability. Additionally, we analyzed the impact of internal parameter mismatch on the complexity of chaotic signals and found it to be similar to the scenario when parameters are matched. Using this chaotic system as an entropy source, we constructed a random number generator (RNG) and investigated the effects of internal parameters mismatch and differences in the injection parameters on the generator’s performance. The simulation results show that the RNG performs well under different parameter settings, and the generated random sequences pass all random number tests successfully. Therefore, this chaotic system can yield a high-complexity chaotic light source with appropriate parameter selection, and when combined with effective post-processing, it can generate high-quality random numbers. This is crucial for advancing the realization of small-sized, high-randomness RNGs.

Tailoring the Direct Current Modulation Response of Electrically Pumped Semiconductor Nano-Laser Arrays

Semiconductor nano-lasers have been a topic of interest from the perspective of advancing the capabilities of photonic integration. Nano-lasers are perceived as the means to achieve improved functionality in photonic integrated circuits. The properties and performance of nano-lasers have been examined by means of simulations and laboratory measurements. Nano-lasers lend themselves to integration to form dense arrays in both one and two dimensions. In a recent work, a theoretical treatment was presented for the dynamic behaviour of stand-alone electrically pumped nano-laser arrays. In this work, the response of nano-laser arrays to direct current modulation is examined. As in previous works, attention is given to two prototype array geometries: a linear three-element linear array and an equilateral triangular array. Large one-dimensional arrays can be built by repeating this elementary linear array. Two-dimensional photonic integrated circuits can incorporate the triangular arrays studied here. Such prototypical configurations offer opportunities to tailor the modulation response of the nano-laser arrays. The principal factors which provide that capability are the coupling strengths between lasers in the arrays and the direct modulation parameters. The former are fixed at the design and manufacture stage of the array whilst the latter can be chosen. In addition, the enhancement of the spontaneous emission rate via the so-called Purcell effect in nano-lasers offers a device-specific means for accessing a range of modulation responses. Two-dimensional portraits of the regimes of differing modulation responses offer a convenient means for determining the dynamics that may be accessed by varying the laser drive current. It is shown by these means that a rich variety of modulation responses can be accessed in both linear and triangular arrays.

Tracking exceptional points above the lasing threshold

Recent studies on exceptional points (EPs) in non-Hermitian optical systems have revealed unique traits, including unidirectional invisibility, chiral mode switching and laser self-termination. In systems featuring gain/loss components, EPs are commonly accessed below the lasing threshold, i.e., in the linear regime. In this work, we experimentally demonstrate that EP singularities in coupled semiconductor nanolasers can be accessed above the lasing threshold, where they become branch points of a nonlinear dynamical system. Contrary to the common belief that unavoidable cavity detuning impedes the formation of EPs, here we demonstrate that such detuning is necessary for compensating the carrier-induced frequency shift, hence restoring the EP. Furthermore, we find that the pump imbalance at lasing EPs varies with the total pump power, enabling their continuous tracking. This work uncovers the unstable nature of EPs above laser threshold in coupled semiconductor lasers, offering promising opportunities for the realization of self-pulsing nanolaser devices and frequency combs.

Dynamics of Electrically Pumped Semiconductor Nano-Laser Arrays

Semiconductor nano-lasers have been actively investigated both theoretically and experimentally with to the aim of providing a highly compact laser amenable to photonic integration. Such devices are naturally suited for assembly in close-packed one- and two-dimensional arrays. In such arrangements, optical coupling between elements of the array opens opportunities to generate a range of dynamical behaviours. In this paper, we present the first theoretical treatment of the dynamics of electrically pumped nano-laser arrays. Two specific forms of such arrays are analysed in detail: a three-element linear array, and triangular arrays. The former is the basis for extensive one-dimensional arrays, whilst the latter is a building block of many possible geometric configurations of two-dimensional nanolaser arrays. Using these prototypical configurations enables the identification of novel dynamical behaviours, which may be accessed using nano-laser arrays. A distinguishing physical feature of nano-lasers is the enhancement of the spontaneous emission rate via the so-called Purcell effect. Allowing for a range of Purcell enhancement factors, the analysis focusses on the effects of experimentally controllable parameters such as the laser drive current. It is shown that the Purcell enhancement factor is critical to the availability of a range of dynamical behaviours which arise simply due to inter-element optical coupling. Two-dimensional portraits of the regimes of differing dynamics offer a convenient means for determining the dynamics which may be accessed by varying the laser drive current.

Signatures of Superradiance as a Witness to Multipartite Entanglement.

Generation and detection of entanglement is at the forefront of most quantum information technologies. There is a plethora of techniques that reveal entanglement on the basis of only partial information about the underlying quantum state, including entanglement witnesses. Superradiance refers to the phenomenon of highly synchronized photon emission from an ensemble of quantum emitters that is caused by correlations among the individual particles and has been connected by Dicke himself to the presence of multipartite entangled states. We investigate this connection in a quantitative way and discuss whether or not signatures of superradiance from semiconductor nanolasers, manifesting themselves as a modification of the spontaneous-emission time, can be interpreted as a witness to detect entanglement in the underlying state of the emitters.

Linewidth narrowing for the distributed feedback nanoplasmonic laser

Ultra-narrow linewidth and single-mode output are vital for the further development of semiconductor nanolasers capable of excellent lasing performance. This paper addresses a systematic linewidth narrowing method for the design of a new type of nanoplasmonic laser coupled with distributed feedback (DFB) structure of nanogratings. Based on the physical model of DFB nanoplasmonic laser, the optical field distribution, carrier density distribution, relaxation oscillation and lasing spectra of the DFB laser were simulated with different parameters. The optimal device design for the DFB nanoplasmonic laser was achieved through a complete numerical simulation based on the multiple effects. By optimizing the influence of device parameters, the optimal structures for the DFB nanoplasmonic laser were achieved with the optimal optical properties of cavity mode, spectra and output power. The monochromatic DFB nanoplasmonic laser functions the optimum lasing performance with a single-mode peak at 514 nm, 3 dB linewidth of 0.1 pm, and the threshold current of 16 mA. This work provides a fundamental and technical support for the development of a new generation of efficient nanolaser devices with good spectra merits.

Generation of Optical Frequency Combs Using Gain Switched Semiconductor Nanolasers

In this paper, a novel scheme to generate optical frequency combs (OFCs) using gain switched (GS) semiconductor nanolasers (SNLs) is proposed. Numerical calculations have been performed using rate equations, which include the Purcell cavity-enhanced spontaneous emission factor <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">F</i> and the spontaneous emission coupling factor β. The results demonstrate that broadband OFCs (10 <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dB</i> frequency span, <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sub> >1 <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">THz</i> ) can be generated over a wide range of parameter space due to the intrinsic dynamics of the SNLs. Moreover, it is observed that <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sub> is associated with the effective reduction of the carrier lifetime and increases with increase of the bias current. The broadband OFCs generated in GS SNLs offers opportunities for their practical applications and notably in photonic integrated circuits.

Room-Temperature Broad-Wavelength-Tunable Single-Mode Lasing from Alloyed CdS1-xSex Nanotripods.

Wavelength-tunable semiconductor nanolasers have attracted tremendous attention for their tunable emissions and robust stability, bringing possibilities for various applications, including nanophotonic circuits, solid-state white-light sources, wavelength-converted devices, and on-chip optical communications. Here, we report on the demonstration of broadband-tunable, single-mode nanolasers based on high-quality alloyed single crystalline CdS1-xSex (x = 0-1) nanotripods with well-formed facets fabricated using a conventional CVD approach. Microstructural characterization and optical investigations reveal that these structures are crystalline with composition-tunable CdS1-xSex alloys. Microphotoluminescence spectra and mapping of these nanotripods exhibit emissions with continuous wavelengths from 509 to 712 nm, further demonstrating that the CdS1-xSex alloys have tunable bandgaps due to the composition gradient. Additionally, under a pulse laser illumination, room-temperature single-mode lasing is clearly observed from these nanotripods cavities, which shows almost identical emission lines with a high-quality factor of ∼1231. More importantly, wavelength continuously tunable nanolasers from 520 to 738 nm are successfully constructed using these bandgap gradient nanotripods. The capability to fabricate high-quality tunable nanolasers represents a significant step toward high-integration optical circuits and photonics communications.

Nanolasers with Feedback as Low-Coherence Illumination Sources for Speckle-Free Imaging: A Numerical Analysis of the Superthermal Emission Regime.

Lasers distinguish themselves for the high coherence and high brightness of their radiation, features which have been exploited both in fundamental research and a broad range of technologies. However, emerging applications in the field of imaging, which can benefit from brightness, directionality and efficiency, are impaired by the speckle noise superimposed onto the picture by the interference of coherent scattered fields. We contribute a novel approach to the longstanding efforts in speckle noise reduction by exploiting a new emission regime typical of nanolasers, where low-coherence laser pulses are spontaneously emitted below the laser threshold. Exploring the dynamic properties of this kind of emission in the presence of optical reinjection we show, through the numerical analysis of a fully stochastic approach, that it is possible to tailor some of the properties of the emitted radiation, in addition to exploiting this naturally existing regime. This investigation, therefore, proposes semiconductor nanolasers as potential attractive, miniaturized and versatile future sources of low-coherence radiation for imaging.

Characterizing the chaotic dynamics of a semiconductor nanolaser subjected to FBG feedback.

Nonlinear dynamics of semiconductor nanolasers subjected to distributed feedbacks from fiber Bragg grating (FBG) are investigated through modified rate equations, which include the unique Purcell cavity-enhanced spontaneous emission factor F and spontaneous emission coupling factor β. In the analysis, the effects of F, β, frequency detuning, feedback strength, feedback delay, FBG bandwidth and length on chaotic performance are evaluated. It is observed that the approach of FBG feedback outperforms mirror feedback in terms of concealing time-delay signature and increasing effective bandwidth by choosing intermediate feedback strength and frequency detuning. Additionally, chaotic regions and the corresponding chaotic characteristics are revealed by dynamical mappings of nanolasers subjected to FBG feedback. The results show that decreased F, β and increased FBG bandwidth can extend the parameter range of chaos. However, the variation of feedback delay and FBG length has no obvious effect on TDS suppression and effective bandwidth enhancement. Most importantly, high quality optical chaos with low TDS and high effective bandwidth induced by increased dispersion is obtained within broad parameter regions considered, which is beneficial to achieving chaos-based applications.

Mesoscopic Limit Cycles in Coupled Nanolasers.

Two coupled nanolasers exhibit a mode switching transition, theoretically described by mode beating limit cycle oscillations. Their decay rate is vanishingly small in the thermodynamic limit, i.e., when the spontaneous emission noise tends to zero. We provide experimental statistical evidence of mesoscopic limit cycles (∼10^{3} intracavity photons). Specifically, we show that the order parameter quantifying the limit cycle amplitude can be reconstructed from the mode intensity statistics. We observe a maximum of the averaged amplitude at the mode switching, accounting for limit cycle oscillations. We finally relate this maximum to a dip of mode cross-correlations, reaching a minimum of g_{ij}^{(2)}=2/3, which we show to be a mesoscopic limit. Coupled nanolasers are thus an appealing test bed for the investigation of spontaneous breaking of time translation symmetry in the presence of strong quantum fluctuations.

Enhancement of the optical gain in GaAs nanocylinders for nanophotonic applications

Semiconductor nanolasers based on microdisks, photonic crystal cavities, and metallo-dielectric nanocavities have been studied during the last few decades for on-chip light source applications. However, practical realization of low threshold, room temperature semiconductor nanolasers is still a challenge due to the large surface-to-volume ratio of the nanostructures, which results in low optical gain and hence higher lasing threshold. Furthermore, the gain in nanostructures is an important parameter for designing all-dielectric metamaterial-based active applications. Here, we investigate the impact of p-type doping, compressive strain, and surface recombination on the gain spectrum and the spatial distribution of carriers in GaAs nanocylinders. Our analysis reveals that the lasing threshold can be lowered by choosing the right doping concentration in the active III–V material combined with compressive strain. This combination of strain and p-type doping shows 100× improvement in gain and approximately five times increase in modulation bandwidth for high-speed operation.

Concealment of Time Delay Signature of Chaotic Semiconductor Nanolasers With Double Chaotic Optical Injections

The time delay signature (TDS) concealment properties of a novel semiconductor nanolaser subject to double chaotic optical injections are investigated numerically. The TDS concealment is evaluated by the peak size of the autocorrelation function (ACF). The effects of feedback rate, injection rate, frequency detuning, Purcell cavity-enhanced spontaneous emission factor, and spontaneous emission coupling factor on the TDS concealment are carefully examined. It is found that, with the double chaotic optical injections, the TDS can be concealed in wide ranges of feedback rate, injection rate, and frequency detuning. Moreover, better TDS concealment can be achieved for a smaller frequency detuning and a larger injection rate. The 2-D maps of peak size of ACF further show that the range of parameter space contributing to better TDS concealment is wider for a moderate Purcell cavity-enhanced spontaneous emission factor and a smaller spontaneous emission coupling factor. These results may be interesting for the enhanced chaotic sources on-a-chip based on novel semiconductor nanolasers.

Numerical Investigation on Feedback Insensitivity in Semiconductor Nanolasers

This paper presents numerical investigations into the effect of feedback phase on the stability of semiconductor nanolasers (SNLs) in the presence of the external optical feedback. For this purpose, numerical solutions are obtained from rate equations where the effects of Purcell cavity-enhanced spontaneous emission factor F and an enhanced spontaneous emission coupling factor β are included. In this way, a phase-insensitive stable SNL is identified when the feedback coupling fraction is below a critical threshold η c. Furthermore, the relationship between η c and two other important system parameters, namely the injection current ( I dc) and the initial external cavity length ( L 0), is studied. The results show that η c has a bi-exponential relationship with either I dc or L 0. Moreover, the influence of F on the η c is evaluated, and it is found that η c increases with the increase of F . The results presented in this paper provide practical guidelines for the design of phase-insensitive stable SNLs, which are useful for densely integrated photonic circuits based applications, such as optical communications and sensing.

Numerical study of metallic semiconductor nanolasers with double-concave cavity structures

&lt;sec&gt;Metallic semiconductor nanolaser, as an ultra-small light source, has been increasingly attractive to researchers in last decade. It can have wide potential applications such as in photonic integrated circuits, on-chip interconnect, optical communications,etc. One obstacle to miniaturization of the laser size is that the loss increases rapidly with the cavity volume decreasing. In previous studies, a type of Fabry-Perot cavity with capsule-shaped structure was investigated and demonstrated both numerically and experimentally, showing that its cavity loss is reduced dramatically in contrast to the scenario of conventional rectangular cavities. However, when the cavity size is reduced down to nanoscale, capsule-shaped structure surfers high loss. To overcome this difficulty, in this paper, a novel type of double-concave cavity structure for metallic semiconductor nanolaser in a 1.55 μm wavelength range is proposed and numerically studied. The proposed structure consists of InGaAs/InP waveguide structure encapsulated by metallic clad, and has a cylindrical reflection end face and concave curved sidewalls. &lt;/sec&gt;&lt;sec&gt;The cylindrical reflection end face can push the resonant mode into the cavity center and reduce the optical field overlap with metallic sidewalls, which can reduce the metallic loss. The curved-sidewalls topologically reduce the electric field component perpendicular to the sidewalls, and thus reducing the plasmonic loss. By optimizing the waist width of the double-concave cavity structure, the radiation loss can be effectively reduced, resulting in the improvement of cavity quality factor and the decrease of threshold current. Finite-difference time-domain simulations are conducted to investigate the properties of the proposed cavity structures such as resonant mode distribution, cavity quality factor, confinement factor, threshold gain and threshold current in this paper. The numerical results show that the double-concave cavity laser with cavity volume as small as 0.258 &lt;i&gt;λ&lt;/i&gt;&lt;sup&gt;3&lt;/sup&gt; increases 24.8% of cavity quality factor and reduces 67.5% of threshold current, compared with the conventional capsule-shaped one, demonstrating an effective improvement of metallic nanolaser. With those advantages, the proposed structure can be used for realizing the ultra-small metallic semiconductor nanolasers and relevant applications.&lt;/sec&gt;

Design of Room Temperature Electrically Pumped Visible Semiconductor Nanolasers

This paper presents a comprehensive theoretical study of the optical and thermal properties of an electrically pumped semiconductor nanolaser (SNL) having an GaN/(InGaN/GaN MQWs)/GaN core shell structure. Numerical results show that the lasing whispering-gallery mode has a threshold gain of 413 cm $^{-1}$ . Furthermore, it is shown that when it is operated well-above threshold, the device temperature increases by only 22 K above an ambient temperature of 300 K. These promising results are attributed to the strong mode confinement in the active region and the good thermal properties of the material system of the proposed structure. The results presented in this paper offer guidelines for fabrication of electrically pumped room temperature continuous wave SNL operating in the visible spectral region.