Semiconductor Materials Research Articles

Modification of New Semiconductor Materials by Doping

In the era of information, people’s lives are inseparable from electronic equipments. Semiconductors are key materials for manufacturing electronic equipment, which can be applied in multiple fields such as integrated circuits, solar cells, and so on. However, pure semiconductors have a single property, which are difficult to meet the design and usage requirements of different electronic devices. To solve the problem, introducing heteroatoms for modification to make them have more suitable performance will be a good way. Good semiconductor performance generally relies on precise control of the doping process. Different types of semiconductor materials typically require specific doping techniques to improve its performance. Adding small amounts of heteroatoms to pure semiconductors can significantly improve their conductivity by forming p/n junctions or achieving specific functions. Doping technology has been widely used in the semiconductor manufacturing industry. It is of great significance for the manufacturing of chips, photovoltaics and other devices. At present, there are still many shortcomings in doping technology. It may come across the semiconductor structure failure caused by doping, or difficulty in meeting performance requirements for use. Thereofore, continuous research and improvement are still needed. This paper reviewed the applications and the doping techniques of various semiconductor materials including two-dimensional semiconductors and organic semiconductors. In addition, it also provides prospects for their related applications and development.

Research of Gallium Nitride as Next-Generation Semiconductor

In today’s society, semiconductors have become an indispensable material in people’s lives, as they are closely related to daily needs such as internet access, power supply, and computing. The most widely used semiconductor material currently is silicon. Its cost advantage in the early stage made other semiconductor materials lag far behind. As semiconductor manufacturing has progressed to nanoscale and even 3-nanometer technology, problems with silicon semiconductors have become increasingly apparent. As the size of silicon transistors continues to shrink, quantum tunneling effects such as leakage current and gate leakage current have caused power consumption to increase continuously. Moreover, the silicon manufacturing process requires harsh conditions such as high vacuum, high temperature, and multiple steps, which increases the production cost and process complexity. Therefore, people have pinned their hopes on the next-generation semiconductor material, gallium nitride (GaN), as an alternative to silicon. Given its superior properties such as wider bandgap, higher electron mobility, and better thermal conductivity, gallium nitride (GaN) offers promising solutions to overcome the limitations of silicon-based semiconductors.

Photodetectors performance of nanostructured materials in antimony III-V InGaAsSb/AlGaAsSb interband cascade structures

The aim of the study is to increase the performance of solar conversion by integrating nanostructured materials within conventional solar cells by employing multi-energy stages (i.e., interband and intersubband) in cascade systems to overcome the absorption length barrier and achieve large photo-generated carrier values. Specifically, InGaAsSb/Al GaAsSb MQWs are investigated with narrow well widths (2-20 nm) and transition energies of the structures are calculated for varied well/barrier widths and depths using numerical modelling. The results show that both interband and intersubband transitions are valuable for improving photovoltaic and photodetection applications, but their mechanisms and applications are distinct, so understanding and controlling these transitions within semiconductor materials is essential for optimising the performance of devices in both areas of optoelectronics, including strain as an important parameter of integrity. The data suggests that a single electron requires multiple photons to be transported, with the formation of a type-I broken-gap alignment between AlGa AsSb (barrier) and InGaAsSb (well). A wide range of wavelengths, from visible to medium infrared (MIR), will greatly enhance solar spectrum absorption. The long-term goal is to combine the thermal properties of antimonies (GaSbInSb) with a low band gap and the optical properties of arsenide (GaAsAlAs) with a large band gap.

1D/2D Heterostructures: Synthesis and Application in Photodetectors and Sensors.

Two-dimensional (2D) semiconductor components have excellent physical attributes, such as excellent mechanical ductility, high mobility, low dielectric constant, and tunable bandgap, which have attracted much attention to the fields of flexible devices, optoelectronic conversion, and microelectronic devices. Additionally, one-dimensional (1D) semiconductor materials with unique physical attributes, such as high surface area and mechanical potency, show great potential in many applications. However, isolated 1D and 2D materials often do not meet the demand for multifunctionality. Therefore, more functionality is achieved by reconstructing new composite structures from 1D and 2D materials, and according to the current study, it has been demonstrated that hybrid dimensional integration yields a significant enhancement in performance and functionality, which is widely promising in the field of constructing novel electronic and optoelectronic nanodevices. In this review, we first briefly introduce the preparation methods of 1D materials, 2D materials, and 1D/2D heterostructures, as well as their advantages and limitations. The applications of 1D/2D heterostructures in photodetectors, gas sensors, pressure and strain sensors, as well as photoelectrical synapses and biosensors are then discussed, along with the opportunities and challenges of their current applications. Finally, the outlook of the emerging field of 1D/2D heterojunction structures is given.

Synergistic effects of carbon coating and Bi-bridge in S-scheme C@CuO/Bi/Bi2MoO6 nanocomposites for enhanced photoreduction of Cr(VI)

The S-scheme mechanism in photocatalysis offers a promising approach to significantly enhance photoreductive activity. Here, using Bi dots as electronic media, and by changing the amount of added C@CuO on the surface of flower-shaped Bi2MoO6, a diverse range of CBM-x heterojunctions, were synthesized using a multi-step approach that incorporated solvothermal preparation and calcination methods. CBM-10 exhibited excellent photocatalytic activity: 96.9 % of Cr(VI) removal in 30 min, which was 38.0-fold better than CuO, 4.2-fold higher than pristine Bi2MoO6. Furthermore, even after five cycles of use, CBM-10 showed outstanding stability. Experiments to capture the active species revealed that electrons play a crucial role in the photocatalytic reduction of Cr(VI). In these heterojunctions, carbon doping leads to the formation of coatings on the semiconductor materials to promote the migration and separation of photogenerated carriers. The presence of carbon coating is beneficial to improve the stability of CBM-10. Bi dots grown on Bi2MoO6 nanosheets can act as electron transport channels in C@CuO/Bi/Bi2MoO6, accelerate photoinduced carrier separation. The internal electric field, and the existence of “S-scheme” charge transfer mechanism was verified by the combination of atomic force microscope and synchronous illumination X-ray photoelectron spectroscopy. This process significantly mitigates the recombination of photo-induced carriers, enhancing the overall photoreduction efficacy. This study presents a novel method for developing S-scheme heterojunction to enhance the effectiveness of Cr(VI) decontamination, paves a promising route to heavy metal removal by mild photo-reductive system, and provides new insights into the design of photocatalysts with enhanced redox capabilities.

Optimization Analysis of Low-Noise Amplifier

This paper mainly analyzes the important component of a wireless receiver – low-noise amplifiers (LNA). Low-noise amplifiers can reduce the effect of noise on the received signal and amplify signals. For the better development of wireless communication technology, remote control, and other related fields, it is necessary to optimize the design of low-noise amplifiers, so that low-noise operational amplifiers can finally obtain high gain, low noise figure, and other advantages. This paper analyzes the optimization design of LNA in the field of Global Navigation Satellite Systems (GNSS). This paper analyzes a low-noise amplifier design with the operation of concurrent dual-band for GNSS receivers with a single channel. The optimized design of a low-noise amplifier in this field uses a low-cost 0.18µm CMOS tube and adds load capacitances and a feedforward path to reduce the noise figure (NF) of the system. Noise figures in 1.2 GHz and 1.57 GHz bands are reduced by about 0.9 dB. In addition, the high gain, high linearity, and other excellent properties are shown in 1.2 GHz and 1.57GHz. In the application of 5G/6G network technology, the optimized design of Gallium Arsenide (GaAs) PHEMT technology with a gate length of 0.3µmm and inductively degraded common source topology phase structure is adopted. From this optimization, the noise figure is optimized to 1.3-1.4, and the gain of the system is 20-22 dB. At the same time, good linearity is also shown. Then, the prospects of semiconductor materials such as Gallium Nitride (GaN) and Indium Phosphide (InP), which have the advantages of high electron mobility and low-cost design, in optimizing low noise operational amplifiers. To a certain extent, the in-depth study of the optimal design of LNA can improve the technical level of wireless communication, aerospace, and other fields.

Graphitic Carbon Nitride Based Semiconductors and Their Applications in the Field of Photocatalysis

An increasing number of advanced semiconductor materials have been reported with the progress of theoretical and practical researches. The graphitic carbon nitride (g-C3N4) stands out as a highly promising semiconductor photocatalyst. It is known for its visible-light reaction and good chemical stability, indicating its potential for extensive use in photocatalysis. Recently, rapid progress has been made in researching g-C3N4-based semiconductor substances in photocatalysis. Till now, a large amount of work has focused on the applications of g-C3N4 in photocatalysis. This work focuses on those researches concerning with g-C3N4-based photocatalytic substances. Their structural characteristics, synthesis techniques, and efficiency enhancement are discussed in detail. Besides, their applications in different photocatalytic reactions are also highlighted. These reactions include hydrogen production by water decomposition, degradation of organic matter, carbon dioxide reduction, and photocatalytic bactericide. This article also points out the problems and challenges in the photocatalytic performance. Meanwhile, the stability of g-C3N4 is also highlighted. It also puts forward the promising research directions of g-C3N4 in the field of photocatalysis.

Evaluation of sensitivity in a vertically misaligned double-gate electrolyte-insulator-semiconductor extended source tunnel FET as pH sensor

In this research, the primary objective is to investigate the impact of vertical gate misalignment on the source and drain regions of 30 nm. The double-gate Electrolyte-Insulated-Semiconductor extended-source Tunnel Field-Effect Transistor (ES-VTFET) is proposed for its potential application as a pH sensor. The gate electrode cannot be perfectly aligned with the channel due to fabrication tolerances, particularly in very short-channel structures. This study aims to introduce a vertical electrolyte Bio-TFET-based pH sensor capable of detecting pH changes in aqueous (electrolyte) solutions. The effect of variation in pH values on the electrical characteristics of the device such as drain current (IDS), transconductance (gm), voltage sensitivity (SV) and current sensitivity (SI) have been examined. It has been assumed that the electrolyte section is an intrinsic semiconductor material where electrons and holes signify mobile ions in aqueous solutions. The electrolyte region has an electrolyte dielectric constant of 78, an energy bandgap of 1.12 eV, and an electron affinity of 1.32 eV. Finally, the gate misalignment aspect of the proposed bio TFET-based pH sensor is emphasized by comparing sensitivity parameters. Hence, the proposed pH sensor can be used as a potential candidate for the futuristic application of biosensors.

Scanning electron microscopy imaging of multilayer-doped GaN: Effects of surface band bending, surface roughness, and contamination layers on doping contrast

Dopant profiling by a scanning electron microscope possesses great potential in the semiconductor industry due to its rapid, contactless, non-destructive, low cost, high spatial resolution, and high accuracy characteristics. Here, the influence of plasma and wet chemical treatments on doping contrast was investigated for a multilayered p-n GaN specimen, which is one of the most promising third-generation wide bandgap semiconductors. Angle-resolved x-ray photoelectron spectroscopy and atomic force microscope were employed to characterize the degree of surface band bending, surface roughness, gallium oxides, and hydrocarbons on the surface of GaN. N2 and air plasmas were unable to remove the surface contamination layers, although the degree of surface band bending was suppressed. In contrast, wet chemical methods offer superior capability in removing contamination layers; however, the surface roughness was increased to varying degrees. Notably, NH4F solution is capable of improving the doping contrast. The underlying mechanism was elucidated from the perspective of surface band bending, surface roughness, and contamination. The findings reported here will provide a feasible solution for effective characterization of semiconductor materials and devices.

Mn-doped ZnO nanopowders prepared by sol-gel and microwave-assisted sol-gel methods and their photocatalytic properties.

Although the microwave-assisted sol-gel method is quite frequently used for the preparation of oxide nanostructures, the synergism of the reaction pathways is not fully explained. However, state-of-the-art theoretical and practical results of high novelty can be achieved by continuously evaluating the as-synthesized materials. The present paper presents a comparative study of Mn-doped ZnO nanopowders prepared by both sol-gel and microwave-assisted sol-gel methods. The structural, morphological, and optical properties of the as-obtained powders were established and correlated with their newly proved functionality, namely, the ability to photogenerate distinct reactive oxygen species (·OH or O2 -) and to act as photoactive materials in aqueous media. The solar light-induced mineralization of oxalic acid by Mn-doped ZnO materials was clearly observed while similar amounts of generated CO2 were measured for both catalysts. These inexpensive semiconductor materials, which proved to be light-responsive, can be further used for developing water depollution technologies based on solar light energy.

Ultrathin α-Bi2O3 Thin-Film Transistor for Cost-Effective Oxide-TFT Inverters.

Electronics is advancing toward greater diversity and sustainability by prioritizing energy efficiency and cost-effectiveness. Metal oxide thin-film transistor (TFT) represents a technology at the forefront of advancing next-generation sustainable electronics, and exploring oxide channel compositions is a crucial step in opening opportunities for developing next-generation device applications. This study presents the first development of n-channel α-Bi2O3-TFTs using a 4 nm ultrathin channel prepared by a cost-effective vacuum-free and solvent-free liquid metal printing method in ambient air. Even the pristine device exhibited a clear TFT action but required a large negative gate bias to turn off due mainly to excess carriers from oxygen vacancy in the α-Bi2O3 channel. Oxygen-containing post-annealing reduced both channel carrier and subgap defect densities, enabling the development of depletion and enhancement-type α-Bi2O3-TFTs with the saturation mobility of 2-4 cm2 V-1 s-1. Two types of oxide-TFT-based inverter circuits, zero-VGS-NMOS and CMOS inverters, were fabricated by using α-Bi2O3-TFTs, operating in a high voltage gain of over 130. This work demonstrates the potential of oxide semiconductor materials toward the development of next-generation sustainable electronics.

Tunable electronic and optoelectronic characteristics of two-dimensional g-GeC monolayer: a first-principles study

Two-dimensional (2D) semiconductor materials have emerged as one of the hotspots in recent years due to their potential applications in beyond-Moore technologies. In this work, we systematically investigate the electronic and optoelectronic properties of the g-GeC monolayer combined with strain engineering using first-principles calculations. The results show that g-GeC monolayer possesses a suitable direct bandgap and a strain-tunable electronic structure. On this basis, the designed g-GeC monolayer-based two-probe photodetector exhibits a robust broadband optical response in the visible and near-ultraviolet ranges, along with significant polarization sensitivity and high extinction ratio. In addition, strain engineering can greatly improve the optoelectronic performance of the g-GeC-based photodetector and effectively tune its detection range in the visible and near-ultraviolet regions. These findings not only deepen the comprehension of g-GeC nanosheet but also provide the possibility of its application in nano-optoelectronic devices.

Transmission electron microscopy of epitaxial semiconductor materials and devices

Abstract The transmission electron microscope (TEM) is a powerful imaging, diffraction and spectroscopy tool that has revolutionized the field of microscopy. It has contributed to numerous breakthroughs in various scientific disciplines. TEM-based techniques can offer atomic resolution as well as elemental analysis, which benefit the study of epitaxial semiconductors and their related optoelectronic devices on the atomic scale. The design and optimization of the device performance depend on three key factors: the control of strain at nanometer scale, control of the formation and propagation of defects as well as the control of local electronic properties. Manipulation and optimization are only possible if the key factors can be characterized precisely. Herein, the TEM techniques for strain analysis, defect characterization and bandgap evaluation are reviewed and discussed. Lately, with the development of in-situ TEM techniques, researchers have been able to observe dynamic processes and study the behaviour of materials and devices under realistic conditions (in gaseous atmosphere or in liquids, at elevated or cryogenic temperatures, under strain, bias or illumination) in real-time with extremely high spatial resolution. This review explores the impact and significance of in-situ TEM in the field of semiconductors.

The Influence of Pressure on the Electronic and Elastic Characteristics of GaP Nanocrystals using Density Functional Theory

The electronic structural and mechanical properties of III-V Gallium Phosphide (GaP) nano-crystals zinc-blende stable (ZB) phase under pressure dependence have been studied via the model of the density functional theory (DFT) in combination with the large unit cell (LUC) approach at (8, 16, 54 & 64) atoms. The exchanges and correlations (XC) energy has been defined in all approaches through generalized gradient approximations of the Perdew-Burke-Ernzerhof (GGA-PBE), and determination of GaP characteristics in the case where the pressure has been increased from 0GPa to ±50GPa. Elastic parameters like elastic constants (C11, C12 & C44), Kleinmann parameter (ξ), Zener anisotropic factor (A), shear modulus (G), Young's modulus (E), Poisson’s ratio (v), Bulk modules (B) of GaP-ZB structure have been calculated and showed systematic variation with a pressure increase. Our calculations show that Bulk modules and sound speed increase with an increase in the number of core atoms. In this systematic approach, it has been found that the B/G ratio is 1.58 for this compound and it exhibits a negative Cauchy pressure, classifying GaP as brittle. The results were discovered to be consistent with other theoretical as well as experimental results. The present study directly relates to the latest experimental works on the III-phosphide compounds. The current results provide information and direction for further investigation into the fundamentals and potential applications of gallium phosphate (GaP) nanocrystals. In addition, we attempted to compare the results of the investigation with some similar types of compounds that are already documented in the literature. We believe that our study will have a significant impact on both the field of research and contemporary technology based on semi-conducting materials.

Alternative Plasmonic Materials for Fluorescence Enhancement.

Noble metals such as gold and silver have been used extensively for a range of plasmonic applications, including enhancing the fluorescence rate of a dye molecule, as evidenced by numerous experiments over the past two decades. Recently, a variety of doped semiconductors have been proposed as alternative plasmonic materials, exhibiting plasmonic resonances from ultraviolet to far-infrared. In this work, we investigate the suitability of these alternative materials for enhancing the fluorescence of a molecule. Considering nanosized spheres, we study their response under plane wave illumination and the resulting enhancement factors when coupled to a quantum emitter. Comparisons with standard plasmonic metals reveal that semiconductor materials lead to a significantly reduced, and often strongly quenched, emission of light caused by their dominant absorption, which hinders fluorescence enhancement. However, we show that enhancement may be obtained when considering poor emitting dyes and high refractive index environments. Our findings demonstrate that these alternative materials result in weaker fluorescence enhancement compared to their plasmonic counterparts. Nonetheless, there are means to compensate for this, and a reasonable enhancement can be achieved for dyes in the infrared spectrum.

Fast electron initiated electron–hole pair creation in semiconductors

Through Monte Carlo modeling, it is shown that the statistics of electron–hole pair creation in semiconductors (and by extension, presumably, ion-pair creation in gas proportional counters) are substantially different for fast electrons (and by extension, presumably, alpha particles, ions, etc.) cf. x-ray/γ-ray photons. New variables are introduced to quantify the differences in the statistics: the loss parameter, ζ(E′), which acts on the average e−–h+ pair creation energy; and the broadening factor, B(E′), which acts on the Fano factor. E′ is the initial energy of the fast electron. ζ(E′) and B(E′) are computed for a variety of semiconductor materials. A new equation for the statistically limited energy resolution of a particle counting fast electron spectrometer is established. This new equation supersedes and replaces that for the Fano-limited energy resolution of a particle counting fast electron spectrometer. The implications impact a wide variety of fields wherever fast electrons (or alpha particles, ions, etc.) and/or Fano statistics are used; this includes, inter alia, quantum computing, x-ray excitonics, space science, optoelectronics, nuclear engineering, particle physics, photovoltaics, and even neural response variability in the brain.

Hydrothermal Growth Zinc Oxide Nanorods for pH Sensor Application

The aim of this work is to apply synthesized zinc oxide (ZnO) Nanorods using hydrothermal (HTL) growth technique for pH sensor application. The highly crystallite of ZnO Nanorods was obtained by anneal the growth ZnO Nanorods in furnace at 200 °C for 2 hours. Besides that, XRD analysis shows the produced ZnO Nanorods belonged to the (002) plane. Furthermore, Scanning Electron Microscope (SEM) images confirm that the ZnO Nanorods with hexagonal-faceted structural were successfully produced by HTL growth technique. In addition, Ultraviolet–visible (UV-Vis) spectrophotometer analysis shows that the synthesized ZnO belongs to the wide band gap semiconductor material. The growing ZnO Nanorods were then subjected to electrical measurement with various pH levels. The outcome demonstrates that the current rises as the solution changes from acidic to alkaline. Overall, our study shows a relationship between the electrical as well as the structural characteristics of ZnO Nanorods at various pH levels.

A Switchable Linear Regulator Implemented in GaAs pHEMT for WiFi Application

ABSTRACTCompared to silicon‐based complementary metal oxide semiconductor (CMOS), second‐generation semiconductor materials, such as gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT), offer significant advantages for radio frequency (RF) applications. As communication systems become more functional, designing highly integrated on‐chip transceiver systems presents a substantial challenge, where the voltage regulator as part of the power management module is indispensable. Due to lattice defects and other issues, achieving P‐channel metal oxide semiconductor (PMOS) in GaAs pHEMT is difficult, necessitating new circuit architectures to fulfill traditional linear regulator functions. To realize wireless fidelity (WiFi) transceiver systems on chip (SoC) using compound semiconductors for superior RF performance, this paper proposes a switchable linear regulator based on a 0.25 μm GaAs pHEMT process. The proposed linear regulator consumes a quiescent current of 440 μA in no‐load conditions and regulates a 5 V supply voltage down to 2.6 V output voltage. Measured results indicate that the designed linear regulator features a current load capacity of 20 mA, a load regulation rate of 5.8 mV/mA, and a line regulation rate of 1.8 mV/V. The proposed linear regulator circuit has been applied to WiFi transceiver systems, occupying a chip area of 0.054 mm2.

Synthesis of concave Au NRs-Pt-CdS plasmonic photocatalyst with efficient hydrogen production rate

Light-driven water photolysis for hydrogen (H2) generation has been proven to be exceptionally efficient in the field of energy transformation. Nevertheless, the practical applications of many single-component semiconductors still suffer from a relatively low energy conversion efficiency. In this work, concave gold nanorods (Au NRs) with three plasmon resonance modes were synthesized using a one-step method in an aqueous solution. Pt nanoparticles and CdS nanocrystals were rational grown onto Au NRs to design the plasmonic photocatalysts with specific morphology and structure characteristic. Photocatalytic test indicated that concave Au NRs-Pt-CdS hetero-nanostructure possess efficient H2 production rate under visible and near-infrared regions. These findings offer a blueprint for creating a novel group of hetero-nanostructures that combine faceted noble metal nanoparticles with semiconductor materials, demonstrating promise for applications across fields such as photocatalysis and energy storage.

Photoelectrochemical Hydrogen Production from Water Using Copper‐based Chalcopyrite Thin Films

AbstractCopper (Cu)‐based chalcopyrite compounds are promising photoabsorber materials not only for solar cells but also for photoelectrochemical (PEC) systems for conversion of sunlight energy into chemical energy. PEC water splitting to generate hydrogen (H2) is one of the most advanced technologies in a PEC system for the use of Cu‐based chalcopyrite compounds. In this review, we firstly introduce crystallographic/energetic structures of Cu‐based chalcopyrite compounds in view of their applications to PEC water splitting. Explanations for the operation of PEC water splitting using semiconductor materials are then overviewed. Based on these backgrounds, studies on PEC H2 evolution over photocathodes based on CuInS2 and CuGaSe2 thin films that we have developed are reviewed in detail. For realizing efficient PEC H2 evolution over these thin films, surface modifications with an n‐type layer such as CdS and a catalytic site such as Pt deposit were found to be indispensable. Precise controls of p‐n heterointerfaces formed by introducing an n‐type layer should also be required to enhance PEC performance. Although PEC water splitting has not reached the required efficiency to be useful, effective combinations of appropriate surface and interface modifications should lead to further improvements of properties to be close to practical applications.