Semiconductor Materials Research Articles

Histidine-based hybrid perovskites as promising materials for wide wavelength photodetection

Layered 2D hybrid organic-inorganic perovskites (2D-HOIPs) exhibit a distinctive array of properties, including remarkable structural flexibility, enhanced resistance to moisture, and optoelectronic characteristics valuable for practical applications. Consequently, these materials are now widely acknowledged as pivotal components in optical and optoelectronic technologies. However, a significant drawback of 2D-HOIPs is their wide band gaps that has hindered their widespread application in optoelectronic devices. In this work we address this limitation by offering a novel series of 2D mixed-halide tin-based HOIPs with general formula (L-HisH)2SnBrxI4−x (where L-His = L-histidine, x = 4, 3.37, 1.70, 0.56, 0.44, and 0) for which the band gap can reach record narrow values, which are not typical for 2D-HOIPs. These compounds can be easily obtained in wide compositional range by implementing halide substitution approach. Each hybrid perovskite features a chiral structure imparted by chiral L-histidinium(+) cations interleaved between corner-shared tin halide octahedra, organized into single-layer thin inorganic slabs. Crucially, these new materials provide a high degree of flexibility in tuning their band gaps throughout the entire visible light spectrum, encompassing a range between 1.82 and 3.05 eV. As a “proof-of-concept”, we created a prototype HOIPs photodetector in which this HOIP was used as an active layer. It is noteworthy that the band gap of pure iodide perovskite is surprisingly narrow for this class of materials. The production of semiconductor materials with a variable width of the optical bandgap is the key to more versatile and diverse applications of these materials in the active components of modern optoelectronic devices. For the obtained prototype, light detection is observed in the wide range covering UV, visible and near-IR regions, marking a record achievement for 2D-HOIPs. Beyond photodetectors, these new histidine-based perovskites hold promise for applications in various other optoelectronic devices, including solar cells, photodiodes, phototransistors, polarized light detectors, and more.

Förster Resonance Energy Transfer and Enhanced Emission in Cs4PbBr6 Nanocrystals Encapsulated in Silicon Nano-Sheets for Perovskite Light Emitting Diode Applications.

Encapsulating Cs4PbBr6 quantum dots in silicon nano-sheets not only stabilizes the halide perovskite, but also takes advantage of the nano-sheet for a compatible integration with the traditional silicon semiconductor. Here, we report the preparation of un-passivated Cs4PbBr6 ellipsoidal nanocrystals and pseudo-spherical quantum dots in silicon nano-sheets and their enhanced photoluminescence (PL). For a sample with low concentrations of quantum dots in silicon nano-sheets, the emission from Cs4PbBr6 pseudo-spherical quantum dots is quenched and is dominated with Pb2+ ion/silicene emission, which is very stable during the whole measurement period. For a high concentration of Cs4PbBr6 ellipsoidal nanocrystals in silicon nano-sheets, we have observed Förster resonance energy transfer with up to 87% efficiency through the oscillation of two PL peaks when UV excitation switches between on and off, using recorded video and PL lifetime measurements. In an area of a non-uniform sample containing both ellipsoidal nanocrystals and pseudo-spherical quantum dots, where Pb2+ ion/silicene emissions, broadband emissions from quantum dots, and bandgap edge emissions (515 nm) appear, the 515 nm peak intensity increases five times over 30 min of UV excitation, probably due to a photon recycling effect. This irradiated sample has been stable for one year of ambient storage. Cs4PbBr6 quantum dots encapsulated in silicon nano-sheets can lead to applications of halide perovskite light emitting diodes (PeLEDs) and integration with traditional semiconductor materials.

Photo-assisted Fenton degradation of tetracycline hydrochloride with magnetic Fe3S4/CuS composite

In recent years, semiconductor materials have gradually become popular through photodegradation of organic pollutants, and the semiconductor materials Fe3S4 and CuS have their own shortcomings. To make both materials useful, Fe3S4/CuS composites were prepared by hydrothermal method and degradation experiments were carried out using tetracycline hydrochloride (TCH) as a simulated pollutant. The effects of factors such as the mass ratio of Fe3S4 to CuS, temperature, pH changes, the consume of H2O2, and the amount of catalyst added on the degradation of TCH were explored. At room temperature, the Fe3S4/CuS composites exhibit good Fenton degradation efficiency. The F1C1.5 composite (mass ratio of Fe3S4 to CuS is 1:1.5) achieved 74.60 % at pH 4.0 within one hour. Subsequently, the free radical capture experiments and metal leaching experiments were conducted, and it was found that the active substance h+ played a major role. At the same time, the F1C1.5 composite shows stability, allowing for a lower concentration of iron leaching and having high catalytic activity after 5 cycles. These degradation properties, together with the ease of fabrication of the catalyst, will facilitate the practical application of this system in the continuous removal of TCH.

Modulation performance of terahertz waves by titanium disulfide nanosheets towards 6G

AbstractThe TiS2 compound has attracted considerable attention among researchers in the fields of energy storage and conversion, as well as semiconductor materials. This is due to its remarkable capability to incorporate various elements into its van der Waals gap, as well as its potential to adjust the carrier concentration within the material to optimize its electrically relevant properties. In our study, we employed a terahertz (THz) time‐domain spectroscopy system to measure the spectra of TiS2 within the THz frequency range. Through this analysis, we examined the optical parameters, such as transmittance and refractive index, of the TiS2 samples. Additionally, we conducted optical pumping correlation experiments using THz detection technology to investigate the optical pumping effects on TiS2. By analyzing the THz energy transmission process in different states, we were able to calculate and fit the carrier recombination time. The findings of our research hold significant implications for the advancement of THz devices operating in the 6G frequency band.

SAT solver-driven approach for validating local electron counting rule

Determining large, complex surface structures is essential for understanding and modeling crystal growth. For semiconductor surfaces, the electron counting (EC) rule is known to be useful for predicting surface stability. In this study, a scheme is proposed to automatically determine if a sampled surface structure locally satisfies the EC rule using a Boolean Satisfiability Problem (SAT) solver. This automatic determination is demonstrated on the GaN(0001)-(6 × 6) surface system with H and Ga adsorption as an example. The scheme is also applicable to the automatic generation of surface structures that are expected to be relatively stable, and is expected to accelerate the study of large and complex surface structures of various semiconductor materials.

New 5-6-6-5 (fourfold) and 5-9-6 defect Configurations in g-SiC (graphene-like hexagonal monolayer silicon carbide)

Abstract Computational studies using the density functional theory (DFT) were employed to analyze defect configurations in g-SiC. The SiC supercells containing 72 atoms were used for simulation. We simulate C-vacancy (VC) and Si-vacancy (VSi). We relaxed all atoms so that the atomic force tolerance is 1.0 × 10−4 Ha/Bohr. The unrelaxed defective configurations have the same symmetry as the perfect configuration, which is a D3h symmetry. During relaxation, atoms neighboring the vacancy were displaced to reach a ground state condition. In the case of VC, a Si atom at the center of the defect has four bonds, resulting in a new 5-6-6-5 fourfold configuration with a C2v symmetry. In the case of VSi, a C atom forms bonds with two other C atoms, resulting in a new configuration, namely a 5-9-6 configuration. We identified that this configuration also has a C2v symmetry. Thus, symmetry breaking (lowering) occurs from D3h to C2v. We calculated the formation energy, which is 3.28 eV for the 5-6-6-5 fourfold and 3.92 eV for the 5-9-6 configuration. We also calculated the Density of States (DOS), and the results show that both configurations have semiconductor material properties suitable for promising optoelectronic devices with an infrared spectrum for future applications.

Efficiency limits of concentrated solar thermophotonic converters under realistic conditions: The impact of nonradiative recombination and temperature dependence

A concentrated solar thermophotonic converter (CSTC) that efficiently harvests the entire solar spectrum under non-ideal conditions is proposed. This device includes an optical concentrator, a solar absorber, a GaAs light-emitting diode (LED) on the hot side, and an InP photovoltaic (PV) cell on the cold side. The electric power generated by the PV cell is utilized to positively bias the heated LED, resulting in a substantial increase in LED emission power. A comprehensive theoretical model is developed to accurately predict the output electrical performance and overall energy conversion efficiency of the CSTC device, especially considering the impact of the nonradiative recombination and temperature dependence. The calculated results show that when the solar concentrating factor is 30, and the LED and PV cell voltages are 0.989 V and 1.13 V, respectively, the overall peak efficiency can reach 12.8% and the corresponding output power density is 384 mW cm−2, achieving performance metrics nearly 4 orders of magnitude higher than solar thermophotovoltaics (TPV). Additionally, increasing the solar concentration ratio and decreasing the thickness of the semiconductor materials can further improve the overall output performance. This work reveals that CSTC offers several advantages over solar TPV, including more efficient conversion of narrow-spectrum electroluminescence, higher radiated power from the LED emitter, and the ability to operate at lower solar concentrations and lower costs.

Substrate Induced p-n Transition for Inverted Perovskite Solar Cells.

The p- or n-type property of semiconductor materials directly determine the final performance of photoelectronic devices. Generally, perovskite deposited on p-type substrate tends to be p-type, while perovskite deposited on n-type substrate tends to be n-type. Motived by this, a substrate-induced re-growth strategy is reported to induce p- to n-transition of perovskite surface in inverted perovskite solar cells (PSCs). p-type perovskite film is obtained and crystallized on p-type substrate first. Then an n-type ITO/SnO2 substrate with saturated perovskite solution is pressed onto the perovskite film and annealed to induce the secondary re-growth of perovskite surface region. As a result, p- to n-type transition happens and induces an extra junction at perovskite surface region, thus enhancing the built-in potential and promoting carrier extraction in PSCs. Resulting inverted PSCs exhibit high efficiency of over 25% with good operational stability, retaining 90% of initial efficiency after maximum power point (MPP) tracking for 800h at 65°C with ISOS-L-2 protocol.

Studies on Electronic Structure and Optical Properties of MoS2/X (X = WSe2, MoSe2, AlN, and ZnO) Heterojunction by First Principles

The single-layer MoS2 is a highly sought-after semiconductor material in the field of photoelectric performance due to its exceptional electron mobility and narrow bandgap. However, its photocatalytic efficiency is hindered by the rapid recombination rate of internal photogenerated electron–hole pairs. Currently, the construction of heterojunctions has been demonstrated to effectively mitigate the recombination rate of photogenerated electron–hole pairs. Therefore, this paper employs the first principles method to calculate and analyze the four heterojunctions formed by MoS2/WSe2, MoS2/MoSe2, MoS2/AlN, and MoS2/ZnO. The study demonstrates that the four heterojunctions exhibit structural stability. The construction of heterojunctions, as compared to a monolayer MoS2, leads to a reduction in the band gap, thereby lowering the electron transition barrier and enhancing the light absorption capacity of the materials. The four systems exhibit II-type heterojunction. Therefore, the construction of heterojunctions can effectively enhance the optical properties of these systems. By forming heterojunctions MoS2/WSe2 and MoS2/MoSe2, the absorption coefficient in the visible light region is significantly increased, resulting in a greater ability to respond to light compared to that of MoS2/ZnO and MoS2/AlN. Consequently, MoS2-based heterojunctions incorporating chalcogenide components WSe2 and MoSe2, respectively, exhibit superior catalytic activity compared to MoS2 heterojunctions incorporating non-chalcogenide components ZnO and AlN, respectively. The absorption spectrum analysis reveals that MoS2/MoSe2 exhibits the highest light responsivity among all investigated systems, indicating its superior photoelectric performance.

Photovoltaic effects in BiVO4/ZnTiO3 multilayer films with high fill factor

Bismuth-based semiconductor materials have garnered significant attention because of their appropriate optical bandgap and substantial photoelectric conversion efficiency. Enhancing the photocurrent and fill factor of photovoltaic films is essential for developing high-performance optoelectronic devices. In this study, high-performance BiVO4-ZnTiO3 multilayer films were fabricated using a straightforward sol-gel method, where the incorporation of ZnTiO3 films significantly improved the photovoltaic performance of BiVO4. Through structural design aimed at enhancing light utilization, the BiVO4-ZnTiO3 multilayer film achieved a photocurrent density of 1.9 mA/cm2 at 450 nm, along with a fill factor of 46.8 % in the composite multilayer structure. The improvement in film performance is attributed to the overall multilayer stacking effect. This study offers a novel approach for utilizing bismuth-based semiconductors in optoelectronics.

Trinuclear iron-oxo cocatalyst regulating new electron transfer pathway in Pt loaded bismuth oxychloride for efficient photocatalytic hydrogen production

BiOCl, a traditional p-type semiconductor, finds extensive application in photocatalytic oxidation and degradation, whereas it is less common in photocatalytic water splitting and hydrogen production. Here, the photocatalytic hydrogen production performance of black BiOCl has been examined by the introduction of noble metal platinum and cocatalyst trinuclear iron-oxo cluster. During the 5-h photocatalytic process, the established system significantly augments the hydrogen production efficiency of black BiOCl by an estimated factor of 8.53. Under illumination, trinuclear iron-oxo clusters provide electron recombination with holes in the valence band of the catalyst, thereby increasing the utilization of photogenerated electrons. Additionally, since the specific energy level structure has a significant impact on the cocatalyst function, trinuclear iron-oxo clusters can be suitable in a variety of photocatalytic systems. This new endeavor might present creative design approaches and low-cost cocatalyst alternatives for the photocatalytic hydrogen evolution from the water splitting of conventional p-type semiconductor materials.

Construction and photothermal properties of Ag nanoparticles modified multilevel porous CuO film with ultra-wide infrared spectrum absorption

Based on lattice vibration and energy band theory, narrow bandgap inorganic semiconductor materials have become a new type of photothermal material, but it is difficult to achieve absorption for long wavelength infrared radiation to meet the application requirements of ultra-wide spectrum (2.5–20 μm) infrared detectors. From the perspective of structural optics, this paper constructed a multilevel porous CuO film with both coral-like micro-porous and flower-like nano-porous structures based on chemical bath deposition technique, and the Ag nanoparticles were uniformly embedded in the "petal" gaps of flower-like nano-porous CuO by optimizing the dosages of PVP. Benefiting from the synergistic effect of multilevel porous structure and loaded Ag nanoparticles, the Ag nanoparticles modified multilevel porous CuO (CuO@Ag-PVP 0.05) film had an average absorption of 94.17 % over the wavelength range of 2.5–20 μm. The photothermal conversion efficiency of CuO@Ag-PVP 0.05 film can reach up to 81.12 % and 86.96 % over near-infrared and far-infrared light ranges, respectively. The various material characterizations and simulations analysis showed that the multilevel porous structure containing coral-like and flower-like multi-scale pores can form two guiding modes for light, and based on the synergistic effect of the two guiding modes, the CuO film can form a strong trapping effect for light over ultra-wide spectral range, broaden its absorption range, and enhance its absorption characteristics. The loaded Ag nanoparticles contain a large number of free electrons, which can capture light energy and convert it into heat energy through local surface plasmon resonance (LSPR) effect, further enhancing the light absorption and photothermal conversion efficiency.

Investigation of the structural, electronic, magnetic, and optical properties of the double perovskite oxide semiconductor La2NiMnO6: Ab initio calculations by using GGA-PBE and GGA + mBJ approximations

In this paper, we examined the La2NiMnO6 double perovskite oxide semiconductor materials, our treatment included the structural, electronic, magnetic, and optical characteristics by utilizing the density functional theory, which was performed in the Wien2k software. The exchange–correlation potential was carried out in combination with the GGA-PBE (Perdew Burke Ernzerhof Generalized Gradient Approximation), and GGA + mBJ (modified Becke and Johnson) was used for the exchange–correlation potentials. The results suggest that the compound La2NiMnO6 exhibits in a ferrimagnetic state. It was also found that the stable ground state of the compound is ferrimagnetic. The results demonstrate that La2NiMnO6 has a band gap whose spin-up value is 0 eV and spin-down (dn) value is 2.86 eV (GGA-PBE), with up values is 0 eV and dn value being of 3 eV (GGA + mBJ). We also explored different optical properties, among them electron energy loss, absorption coefficient, real and imaginary dielectric tensor, and real and imaginary optical conductivity.

Photocarrier behavior and photocatalytic H2O2 synthesis performance of amorphous/crystalline SrTiO3/BiVO4 layered heterostructures

BiVO4 (BVO), as a visible light responsive semiconductor material, has been widely employed in the field of photocatalysis. However, monoclinic BVO is afflicted by a high recombination rate of photogenerated charge carriers and poor charge transport capability, resulting in low charge utilization efficiency. Constructing heterostructures for interface modification of BVO is an effective strategy to improve photocatalytic performance. Herein, amorphous/crystalline SrTiO3/BiVO4 (STO/BVO) layered film nanoheterostructures have been successfully fabricated on the (001) yttrium stabilized zirconia substrate by magnetron sputtering. Under 440 nm monochromatic light irradiation, the H2O2 production rate of the composite film is increased by 1.2 times compared to pure BVO. The type II heterostructure composed of STO and BVO accomplishes selective interface hole transport from BVO to STO, promoting the separation of space charges. Additionally, the interaction between amorphous/crystalline interfaces effectively suppresses the photocorrosion of BVO and strengthens the stability of the film, which is of great significance for studying charge transport behavior and photocatalytic mechanisms.

First-principal analysis and design of TaPO5-based waveguides for photonic circuitry

With the rapid development of telecommunication systems, supercomputers, and large data centers, there is a growing need for advanced photonic materials to overcome the limitations of traditional photonic circuitry. This paper introduces monoclinic TaPO5, an indirect-bandgap semiconductor material, as a compact platform for photonic integrated circuits. TaPO5, with a bandgap of 2.148 eV, is analyzed for its structural, vibrational, thermodynamic, and optical properties using pseudo-potential plane waves within the density functional theory (DFT) framework. Our analysis reveals that TaPO5's thermodynamic properties, such as entropy, internal energy, and heat capacity, increase with temperature, while Helmholtz's free energy decreases. The materials demonstrate favorable optical characteristics, including a refractive index (n) of 2.11, an extinction coefficient (k) of 1.2 × 10⁻⁵, and a dielectric function with a real part of 4.45 and an imaginary part of 5.1 × 10⁻⁵ at a wavelength of 1.55 μm. TaPO5 exhibits promising performance metrics for photonic applications. Specifically, a proposed 1 × 2 multimode interference (MMI) splitter demonstrates 0.03 dB excess loss, a compact footprint of 4 × 18 μm2, and a 50:50 splitting ratio at 1.55 μm. These findings indicate that TaPO5 is a viable material for next-generation photonic integrated circuits, offering theoretical and practical advantages for various applications in photonic technology.

Patternable and flexible thermoelectric generators based on Bi2Te3/silk fibroin composites for temperature sensing and wearable applications

Thermoelectric (TE) materials are functional materials that can directly convert heat energy into electrical energy, and have a positive effect on alleviating the energy crisis. Inorganic semiconductor materials have attracted extensive attention due to their excellent TE properties, among which Bi2Te3 is the best and most widely used inorganic TE material at room temperature. However, inorganic TE materials are still restricted by unfavorable factors such as scarcity of raw material resources, heavy metal pollution, high price, high rigidity, and complex processing technology, which greatly limit their development process. Therefore, it is urgent to develop flexible TE materials with high performance, non-polluting, non-toxic and low price. The combination of silk fibroin and inorganic TE materials not only retains the properties of TE materials, but also improves their flexibility. Here, the Bi2Te3/SF TE films are successfully fabricated by the evaporation-assisted self-assembly method with Seebeck coefficient of 199 μV⋅K−1 (p-type) and −240 μV⋅K−1 (n-type). In order to verify the feasibility of collecting and utilizing ambient heat energy in real life, the Bi2Te3/SF TE films are cut into various patterns (such as, flower, rabbit, tree, etc) to collect wasted ambient heat. Further, the Bi2Te3/SF thermoelectric generator (TEG) reaches a maximum power of 21 nW at a temperature difference of 43.5 K. A series of self-power temperature sensing demonstrations from single TE film, TEG, to TEG array are proposed to demonstrate their potential applications in the field of self-power sensors. Finally, by inserting Bi2Te3/SF TEG array into a bracelet, a self-powered smart bracelet can be successfully constructed, demonstrating the feasibility of the Bi2Te3/SF TE film in the development of self-powered wearable electronics.

Electron field emission property of NiO-decorated ZnO nanorods grown on diamond films

ZnO/micron diamond (MCD) composite structure combines two wide-band gap semiconductor materials, providing stable performance suitable for high-performance electron field emission (EFE) devices operating in various complex environments. Nonetheless, the optical and electrochemical limitations of ZnO constrain its effectiveness. Typically, NiO can compensate these inherent defects in ZnO, thereby enhancing the performance of field-emitting devices. In this research, NiO-decorated ZnO thin films were fabricated on diamond surfaces using hydrothermal/sol-gel two-step method. The impact of varying Ni doping concentrations caused by nickel acetate solutions on the field emission properties was thoroughly investigated. Furthermore, this study involved the fabrication of NiO-decorated ZnO/micron diamond heterojunction composite structures, exploring the impact of the structure on the optoelectronic performance of the devices. The Ni doping concentration increases in the NiO films formed between the ZnO nanorods, the doped Ni exists in the ZnO/MCD composite structure as both Ni2+ and Ni3+, which are important materials for semiconductor electronic devices. The NiO decoration process induced the creation of defect levels within the bandgap of the nanorod array structure, consequently enhancing the photoluminescence performance of ZnO. Furthermore, the interaction between NiO and ZnO facilitated the formation of a p-n junction at the interface, generating an internal electric field. This electric field significantly improved the current conduction field and maximum current density of ZnO, thereby enhancing its electric field emission performance. The optical and electrical properties of ZnO nanorods doped at 0.1M exhibited the most favorable characteristics among all tested samples. At a doping concentration of 0.1 M, the turn-on electric field reaches a minimum value of 0.96 V/μm and the maximum current density J reaches a maximum value of 2.54 mA/cm2. These results offer novel insights for advancing the development of integrated broadband optical devices.

Optical and optoelectrical characterizations of Cu2ZnSn3S8: A potential nominee for optoelectronic and photovoltaic applications

A successful trial has been accomplished in synthesizing a stable phase of Cu2ZnSn3S8 (CZTS8). The deposited thin films have been obtained by utilizing the chemical bath deposition (CBD) process. Basic characterizations have been applied to check the formation of our new stable material. The formed CZTS8 films disclose the amorphous nature as presented in the x-ray diffraction (XRD) patterns. Also, an enhancement in film morphology has been obtained by expanding the film thickness. Moreover, optoelectrical and linear/nonlinear optical features have been studied for the as-deposited films. Our material has interesting characteristics to be a promising window sheet for thin film solar cells. It reveals a tendency to be an n-type semiconductor material. Further, it shows high optical absorption as well as high optical conductivity. Moreover, it has a direct optical transition, and its energy gap is varied in the range (3.89 eV - 3.94 eV). Additionally, the dispersion and optoelectrical indices were affected by the variation in both film thickness and film roughness. Furthermore, the nonlinear optical indices χ(1),χ(3) and n2 were improved via the increase in film thickness. A satisfactory correlation has been performed between all of the evaluated parameters. The main goal of this study has been achieved by obtaining n-type material by increasing the Tin and Sulfur contents in the CZTS8 as compared with the known p-type material (Cu2ZnSnS4) CZTS4. The revealed findings acknowledge that CZTS8 could be a promising nominee for either optoelectronic or photovoltaic applications.

Nano-structured urchin-like photothermal covalent organic frameworks for efficient Solar-Driven interfacial water evaporation

Solar-driven interfacial water evaporation is a promising sustainable technology to alleviate the global energy crisis and clean water shortage. The design of advanced photothermal materials play the critical role to utilize photothermal heat for water evaporation. Covalent organic frameworks (COFs) as a new class of crystalline porous polymer semiconductor materials have been deemed as an ideal nanoscale platform for designing photothermal materials with notable features like highly ordered structures, porous open channels, and tunable structure and functionality. In this work, we focus on the regulation of the multi-scale structure of COFs and design hierarchically nano-structured photothermal COFs for efficient solar-driven interfacial water evaporation. At the molecular scale, we synthesize a photothermal functionalized COF-366-OH using photosensitive 5,10,15,20-tetrakis(4-aminophenyl) porphyrin (TAPP) and 2,5-dihydroxyterephthalaldehyde (DHTA) as building blocks. At the micro-nano scale, we introduce the π-conjugated catechol molecule 2,3,6,7,10,11-hexahydroxytriphenylene (HHTP) to regulate COF polycondensation and assembly, which enable the shaping of COF-366-OH into urchin-like nano-morphologies (namely UCOF-366-OH). The synthesized UCOF-366-OH exhibits high crystallinity, large surface area, excellent photothermal conversion capacity, and strong hydrophilicity. Furthermore, UCOF-366-OH is processed into a photothermal composite membrane. With localized solar heating and optimized water transport at the water evaporation interface, a high evaporation rate of 2.51 kg m−2h−1 with solar-to-vapor efficiency of 97.3 % is achieved. This work paves a new way for the multi-scale structural design of COF-based photothermal materials and highlights their innovative application in solar water evaporation.

Revealing the Effect of Ionic Traps on Photovoltaic Performance of Organic Semiconductor Materials

Revealing the Effect of Ionic Traps on Photovoltaic Performance of Organic Semiconductor Materials