Abstract
Bismuth-based semiconductor materials have garnered significant attention because of their appropriate optical bandgap and substantial photoelectric conversion efficiency. Enhancing the photocurrent and fill factor of photovoltaic films is essential for developing high-performance optoelectronic devices. In this study, high-performance BiVO4-ZnTiO3 multilayer films were fabricated using a straightforward sol-gel method, where the incorporation of ZnTiO3 films significantly improved the photovoltaic performance of BiVO4. Through structural design aimed at enhancing light utilization, the BiVO4-ZnTiO3 multilayer film achieved a photocurrent density of 1.9 mA/cm2 at 450 nm, along with a fill factor of 46.8 % in the composite multilayer structure. The improvement in film performance is attributed to the overall multilayer stacking effect. This study offers a novel approach for utilizing bismuth-based semiconductors in optoelectronics.
Published Version
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