Characterization Of Semiconductor Devices Research Articles

Effects of Plasmonic Au Nanoparticles on the Optical Nonlinearity of InAs/GaAs Quantum Dot Semiconductor Saturable Absorber Mirrors

Au nanoparticles (NPs) were designed to be embedded into III-V semiconductors to form Au/GaAs Schottky heterostructures, which were used as top-modified cover layers for quantum dot semiconductor saturable absorption mirrors (QD-SESAMs). By harnessing the distinctive localized surface plasmon resonance (LSPR) effect exhibited by Au NPs, a remarkable enhancement in photogenerated carrier concentration is achieved at the heterojunction interface. Consequently, this leads to a significant improvement in the nonlinear optical characteristics of the device. The modulation depth (MD) and saturation fluence of the device are optimized from the initial 2.2% and 16.1 MW/cm2 to 2.8% and 8.3 MW/cm2, respectively. Based on the optimized device, a Q-switched laser has been developed with an impressive output power of 17.61 mW and a single pulse energy of 274.9 nJ. These results unequivocally showcase the exceptional advantages offered by utilizing Au NPs to optimize the nonlinear optical characteristics of III-V semiconductor devices, thereby highlighting its immense potential for practical applications in various fields.

Optimization of Atomic Layer Deposition Processes for Enhanced Semiconductor Performance

Optimization of Atomic Layer Deposition (ALD) processes is critical for enhancing semiconductor performance, ensuring precise control over material deposition and thickness uniformity. This paper investigates various methodologies and strategies employed in ALD to achieve improved semiconductor device characteristics. Key factors such as precursor chemistry, deposition temperature, cycle time, and post-treatment techniques are explored to optimize ALD processes effectively. The study emphasizes the role of advanced characterization techniques in evaluating film properties and device performance enhancements resulting from optimized ALD processes.

Optimization of Atomic Layer Deposition Processes for Enhanced Semiconductor Performance

Optimization of Atomic Layer Deposition (ALD) processes is critical for enhancing semiconductor performance, ensuring precise control over material deposition and thickness uniformity. This paper investigates various methodologies and strategies employed in ALD to achieve improved semiconductor device characteristics. Key factors such as precursor chemistry, deposition temperature, cycle time, and post-treatment techniques are explored to optimize ALD processes effectively. The study emphasizes the role of advanced characterization techniques in evaluating film properties and device performance enhancements resulting from optimized ALD processes.

Developing A Novel Method for The Characterization of Semiconductor Devices by Provading Synchronous Operation of Lcr-Meters and Direct Current Sources by Using Real-Time Data Acquisition

Organik elektronik alanında üretilen yarıiletken aygıtlar yüksek elektrik alanlar altında tetiklenmektedir ve bu tür aygıtların dielektrik analizini 100-200 V'luk gerilim altında yapan cihazlar piyasada bulunmamaktadır. Bu problemi çözebilmek için yüksek gerilim altında dielektrik analiz yapabilen niteliklere sahip bir ölçüm sistemi geliştirilmiştir. Bunun için geniş bir frekans aralığında birkaç voltluk AC uygulayarak dielektrik spektroskopi analizi yapan cihaza, harici bir DC gerilim kaynağı uygun bir şekilde bağlandı. Bu iki cihazın eşzamanlı çalışması gerekmektedir fakat bu işlemin bağımsız iki cihaz için manuel olarak yapılması oldukça zordur. Bu çalışmada, geliştirdiğimiz eş zamanlı veri transfer programı kullanılarak DC gerilim kaynağı (yarıiletken malzemeler veya aygıtların Akım-Gerilim (I-V) özelliklerinin belirlenmesinde kullanılan) ve LCR Metre cihazının (Kapasitans-Gerilim (C-V), Kapasitans-Frekans (C-f), Kondüktans-Gerilim (G-V) ve Kondüktans-frekans (G-f) özelliklerinin belirlenmesinde kullanılan) eş zamanlı haberleşebilmesi için program geliştirilmiştir. Eş zamanlı veri transfer program ile elde edilen tüm veriler program arayüzünde oluşturulan Excel dosyasına aktarılarak dielektrik spektroskopik özelliklerine ait bilgiler kayıt edilmektedir. Geliştirilen programın literatürde dielektrik özellikleri daha önceden belirlenmiş malzemeler üzerine yapılan ön çalışmalarda tutarlı ve hassas veriler elde edilebildiği ve yüksek bir performansla çalıştığı gözlenmiştir.

A Reliability Study of Photovoltaics Energy Systems in DC Microgrid

In this paper, a lifetime of Photovoltaics PV is studied based on the evaluation of the reliability of the DC microgrid. The analysis has a comprehensive consideration of the elements of the inverter and converter composed of a renewable energy system and its process during bad weather as a supplementary measure for the intermittent output of renewable energy sources connected to the DC microgrid. A battery and a boost converter for the battery were used to keep the voltage constant. The output of the battery varies according to the output fluctuation of the renewable energy source. At this time, the life analysis result of the switching devices that are used in the boost converter is introduced. To prevent system downtime and increase maintenance costs due to converter failures connected to the battery, a converter life analysis is required. Considering that the main failure mechanism of switching devices used in converters is thermal stress, and power loss due to thermal stress. Based on the above, the lifetime characteristics of semiconductor devices are analyzed. The main contribution of this work is conducting the lifetime analysis of solar energy system that is used in the DC microgrid with different weather conditions

A Comparative Evaluation of Wide-Bandgap Semiconductors for High-Performance Domestic Induction Heating

This paper presents a comparative evaluation of wide-bandgap power semiconductor devices for domestic induction heating application, which is currently a serious alternative to traditional heating techniques. In the induction heating system, the power transferred to the output depends on the equivalent resistance of the load, and the resistance depends on the operating frequency. Due to the switching characteristics of wide-bandgap power semiconductor devices, an induction heating system can be operated at higher operating frequencies. In this study, SiC and Si semiconductor devices are used in the comparison. These devices are compared according to different evaluation issues such as the turn-off energy losses, turn-off times, current fall time, the power losses of the internal diodes, and the conduction voltage drops issues. To perform the proposed evaluation, the series-resonant half-bridge inverter, which is frequently used in state-of-the-art induction heating systems, has been selected. The device suitability in an induction heating system is analyzed with the help of a test circuit. A comparison is made in terms of criteria determined by using the selected switches in the experimental circuit, which is operated in the 200 W to 1800 W power range and 45 kHz to 125 kHz switching frequency range. System efficiency is measured as 97.3% when Si IGBT is used. In the case of using SiC cascode JFET, the efficiency of the system is increased up to 99%.

INFLUENCE OF ELECTROMAGNETIC RADIATION ON RESISTANCE OF SEMICONDUCTOR DEVICES

The subject matter is the processes of analysis and mechanisms of appearance of instabilities of natural vibrations of semiconductor structures., due to their interaction with flows of charged particles under the influence of external electromagnetic radiation. It is shown that the influence of pulsed electromagnetic radiation is accompanied by the appearance of currents in the conductive elements of products that are capable of exciting natural oscillations of semiconductor components and are the cause of failures of radio products. The aim is to develop the theory of collisionless damping of surface polaritons in the classical approximation, as well as to study the mechanisms of collisionless damping of surface plasmons at the boundaries of semiconductor components of radio products under conditions when the temperature of carriers of conducting solids is much lower than the plasmon energy (quantum approximation). The objectives are: a kinetic equation describing the change in the number of surface plasmons as a result of their interaction with conduction electrons; obtaining its solution, which determine the decrement of oscillations and the power of spontaneous emission of particles. The methods used are: a method of successive approximations for solving the kinetic equations of the charged particle flux - semiconductor structure system within the framework of the quantum approach, when the interaction of waves and particles is in the nature of random collisions and is described by the method of secondary quantization of the system (representation of occupation numbers). The following results are obtained: Expressions are obtained for the decrements of surface plasmons in the presence of an infinitely high and infinitely small potential barrier at the interface between media. A kinetic equation is obtained that describes the change in the number surface plasmons as a result of their interaction with conduction electrons; his decisions are given, which determine oscillation decrement. Expressions are obtained for the decrements of surface plasmons at presence of infinitely high and infinitely small potential barrier at the interface between A physical model of the occurrence of reversible failures (effects induced by electromagnetic radiation currents per volt - ampere characteristics of semiconductor devices). The ranges of parameters of the external electromagnetic radiation at which this physical model is realized. Conclusion. Calculated relations are obtained that relate the parameters of semi-conductor structures: the concentration of free carriers, permittivity, carrier temperature with the value oscillation decrement in the classical and quantum approximations. The comparative analysis of quantitative estimates of the increments of oscillation instabilities carried out in the work makes it possible to solve the problems of optimizing the operating characteristics of active devices in the microwave range. The results of the work can be used in the development of microwave devices designed to amplify, generate and convert electromagnetic oscillations in the millimeter and submillimeter ranges.

Category theory and organic electronics

Inorganic semiconductors and conducting polymers are described by band conduction models with delocalized electrons, whereas small-molecule organic compounds are described by hopping conduction between localized molecular orbitals. However, the latter devices can reproduce fully the characteristics of semiconductor devices. Why are they so different and yet so similar? We will try to answer this question using Category theory and considering the meaning of electrical transport in electronic materials. The meaning of the category theory in physics is to consider different mathematical entities under a common mathematical structure.In this paper, the basic idea of category theory is first explained in detail using the example of complex impedance, and then four examples of its application are discussed. The derivation of the Mott-Gurney equation and the negative capacitance in OLED are discussed as examples of solving problems by moving to different categories. After those simple examples of formal rewriting from physical entity to mathematical entity, it is shown that electrical connection and electrical contact lead to direct sums and direct products of conducting states, based on the duality concept. We conclude that small-molecule organic compounds are not a mere branch of semiconductors, but rather equal counterparts of semiconductors in duality that are necessary to clarify the origin of the difference and similarity between organic electronics and semiconductor physics. Finally, by considering the electrical responses of OLEDs and OFETs in the immittance category, we show that they can be described under a common operating dynamic and propose a new operating model for OFETs.

Transient characteristics simulation of total ionizing dose effect on Si n-metal-oxide-semiconductor field effect transistor under different gate voltage

In this work, we establish a novel numerical model of total ionizing dose effect and use it to simulate the radiation degradation of Si n-metal-oxide-semiconductor field effect transistor (NMOSFET) under different bias voltages. The model is based on the capture/emission process of traps, and is used to simulate the transient characteristics of semiconductor devices under total ionizing dose effect. In the simulation, the changes of trapped holes in Si/SiO<sub>2</sub> interface and gate oxide layer are extracted, and it is found that the number of trapped holes at different positions tends to be saturated with the increase of the total dose. When the radiation bias voltage is positive, the degradation amplitude of the threshold voltage is significantly higher than that when the radiation bias voltage is negative. Whether the gate is applied with positive bias or negative bias during the radiation, the degradation amplitude of the threshold voltage shows a trend of first increasing and then decreasing with the increase of the absolute value of radiation bias voltage. Radiation bias voltage also has a certain effect on the annealing effect after radiation. If a gate bias voltage is applied to the device during the annealing, the electrical characteristics recovery amplitude of the device is lower than that under zero bias voltage.

High-Throughput Apparatus for Semiconductor Device Characterization in a Magnetic Field at Extreme High Temperatures

High-Throughput Apparatus for Semiconductor Device Characterization in a Magnetic Field at Extreme High Temperatures

An Accurate VSI Nonlinearity Modeling and Compensation Method Accounting for DC-Link Voltage Variation Based on LUT

The nonlinearity of the voltage source inverter (VSI) leads to the error between output voltage and reference voltage, and causes the phase current harmonics. It is necessary to compensate its influence in the fields such as parameter identification, sensorless control, and servo drives. In this article, an industrial solution for VSI nonlinear compensation method based on lookup table (LUT) is introduced. The characteristics of semiconductor devices, equivalent dead-time and influence of parasitic capacitance effects are calculated quantitatively though injecting increase and decrease current during self-commissioning process. The critical current value for parasitic capacitor and the variation of equivalent dead time are verified through different distorted voltage curves. Considering dc-link voltage variation is irresistible for industrial products, 3-D linear interpolation is adopted to compensate the variation of VSI nonlinearity under different voltage conditions. Proposed LUT method does not require VSI datasheet and complicated calculation formula during implementation. Experiments are carried out on a commercial permanent magnet synchronous motor drive system to verify the proposed LUT method.

EXCITATION OF OWN OSCILLATIONS IN SEMICONDUCTOR COMPONENTS OF RADIO PRODUCTS UNDER THE EXPOSURE OF THIRD-PARTY ELECTROMAGNETIC RADIATION

The subject matter is the processes of analysis and mechanisms of interaction of EMP-induced currents and voltages with the processes characterizing the functional purpose of radio products, is usually carried out within the framework of the theory of distributed circuits. The presented approach makes it possible to evaluate the performance criteria in general (for example, to evaluate the critical energy characterizing a thermal breakdown), however, issues related to the determination of various types of electromagnetic interactions that occur directly in the components of a product under the influence of EMR remain open. The aim is the possibility of setting up theoretical and experimental studies based on the proposed calculation model for excitation of natural vibrations of a semiconductor structure (exponential growth of amplitude). The parameters of a third-party pulsed electromagnetic field, induced currents and characteristics of semiconductor devices have been established within which the regime of amplification of natural vibrations of a semiconductor structure is observed. The objectives are: mechanisms of interaction of induced currents with surface vibrations of semiconductor components of a radio product under the influence of pulsed electromagnetic radiation. The methods used are: methods of the theory of small perturbations in determining the spectrum of natural oscillations of the system - currents induced by electromagnetic radiation and natural oscillations of the components of the radio product. The following results are obtained: The mechanisms for the appearance of reversible failures of semiconductor components of radio products under the influence of third-party pulsed electromagnetic fields are determined. It has been established that the presence of a current induced by external radiation leads to the establishment of a mode of amplification of natural oscillations of semiconductor components of a radio product (reversible failures). Conclusion. Quantitative estimates of amplification (generation) modes of oscillations of semiconductor devices, distorting their performance depending on the parameters of external electromagnetic influence, allows developing mechanisms for electromagnetic compatibility of microwave radio products. A comparative analysis of the calculated data obtained in the work can be used in the manufacture of radio devices operating in the millimeter and submillimeter range (amplifiers, generators and frequency converters).

Polarimetric photoluminescence microscope for strain imaging on semiconductor devices.

Anisotropic strain induces a partial linear polarization of the photo-luminescence (PL) emitted by cubic semiconductor crystals such as GaAs or InP. This paper thus presents a polarimetric PL microscope dedicated to the characterization of semiconductor devices. The anisotropic strain is quantified through the determination of the degree of linear polarization (DOLP) of the PL and the angle of this partial linear polarization. We illustrate the possibilities of this tool by mapping the anisotropic strain generated in GaAs by the presence of a stressor film at its surface, that is, a microstructure defined in a dielectric thin film (SiNx) that has been deposited with a built-in stress and shaped into a narrow stripe by lithography and etching. Our setup shows a DOLP resolution as low as 4.5×10-4 on GaAs.

Chua circuit based on the exponential characteristics of semiconductor devices

The use of non-ideal features of semiconductor devices is an interesting option for implementations of nonlinear electronic systems. This paper analyzes the Chua circuit with nonlinearity based on the exponential hyperbolic characteristics of semiconductor devices. The stability analysis using describing functions predicts the dynamics of this nonlinear system, which is corroborated by numerical investigations and experimental results. The dynamic behaviors and bifurcations of this nonlinear system are mapped in parameter space in order to create a base for studies, analyses, and designs. The dynamic behavior of the experimental high speed implementation of this version of Chua circuit differs from the expected dynamics for a conventional Chua circuit due to effects of unmodelled non-idealities of the real semiconductor devices, displaying that new and different dynamics for the Chua circuit can be obtained exploring different nonlinearities.

Dynamic-Switching Energy Dissipation Behaviors of Cryogenic Power MOSFET at 77 K

To operate a converter at cryogenic temperatures, understanding the characteristics of power semiconductor devices is critical. This paper investigates the temperature and current dependence of the dynamic performance of five types of SiC power MOSFETs at 77 K. The turn-on and turn-off lasting time and the corresponding switching energy loss are extracted from a series of double-pulse tests. The transient peak voltage of cryogenic MOSFETs is lower, but the switching time is higher than the room-temperature ones. Moreover, power-exponential functional relations with the operating currents are found in the experiments. These results obtained lay some technical bases for exploring superconducting power electronics.

Higher-performance Fabry-Perot microlaser enabled by a quadrilateral microwire via Ag nanowires decoration

In this work, ultraviolet Fabry-Perot (FP) microlaser, made of an individual rectangular-shaped ZnO microwire, was achieved. The bilateral smooth facets and single-crystalline specificity of as-grown ZnO microwires can enable the realizing of lateral FP microresonators. By incorporating Ag nanowires (AgNWs), plasmon-enhanced FP lasing performances of an individual ZnO microwire, specifically for the sharply reduced threshold, increased lasing intensity and increased Q-factor, were achieved. Accordingly, the enhanced working principle was implemented, and is resorting to the confinement and enhancement of localized electromagnetic-field produced by AgNWs, which can make up the metal loss and accelerate more radiative recombination. Thereby, the incorporation of a rectangular-shaped microwire and AgNWs via desired ultraviolet plasmons can be used to exploit the modulation of metal nanostructures on lasing characteristics of wide bandgap semiconductors. Further, this study also suggestes that AgNWs with excellent ultraviolet plasmons can be generally utilized to modulate the optoelectronic characteristics of wide bandgap semiconductor materials and devices, indicating its underlying applications in fabricating high-performance light-emitting diodes and lasers, photodetectors and so on, working in the ultraviolet wavelengths.

Impact of high temperature electron irradiation on characteristics of power SiC Schottky diodes

Impact of high temperature electron irradiation on the characteristics of power silicon carbide-based semiconductor devices was studied for the first time. Commercial 4H–SiC integrated Schottky diodes (JBS) with blocking voltage of 1700 V were irradiated with 0.9 MeV electrons at temperatures from 23 to 5000С in the fluence range Φ from 1 × 1016 cm−2 to 1.3 × 1017 cm−2. It was shown that ruggedness of the diodes during high temperature (“hot”) irradiation significantly exceeds the ruggedness of diodes at room temperature (“cold”) irradiation. With an increase in the irradiation temperature from 23 to 500 °C, the change in the base resistance at a fluence of 1.3 × 1017 cm−2 decreases by 6 orders of magnitude. In the entire investigated range of irradiation temperatures and fluences, irradiation does not change the height of the metal-semiconductor barrier even at the maximum fluence Φ.

Investigation of The Numerical Solution for One Dimensional Drift-Diffusion Model in Silicon in Steady State

The drift-diffusion model is considered as one of the most important models which is used to describe the characteristics of semiconductor devices and can be applied to wide range of applications started from micro up to nano scale devices after applying the suitable correction on it. The Poisson, continuity, and current equations are considered as the basic equations for semiconductor devices, these equations are partial differential equations, used in the drift diffusion model. These equations described the semiclassical electron and hole transport in semiconductor in the presence of uniformly applied electric field. In this paper a numerical method (finite difference method) has been used to find the solution of these equations depending on Gummel method and Scharfetter-Gummel scheme, the drift diffusion model is applied after many approximation and suitable boundary condition which has been considered for the pn diode in both equilibrium and non-equilibrium cases at room temperature, from this simulation model a MATLAB program has been prepared to obtained diode parameters as a function of distance at the junction region, these parameters are (conduction band, carrier concentration, electric field and charge density) two diode model has been tested with different doping concentration the first with N_A=N_D and the second with N_A>N_D also the diode characteristic in the forward biased is obtained.

Multicomponent Model of Charge Transport in Quantum Semiconductor Devices

A model that allows taking into account the influence of quantum and non-equilibrium effects to the characteristics of semiconductor devices is presented. The model was successfully used for calculation the characteristics of resonant-tun-neling diodes, electronic, thermionic and optoelectronic devices based on nanowires. In a quasi-classical approximation it goes into a drift-diffusion model.

Diagnostics of semiconductor structures by electrochemical capacitance-voltage profiling technique

The properties of interfaces in the heterostructures which frequently govern their operation are of particular importance for the devices containing heterostructures as active elements. Any further improving of the characteristics of semiconductor devices is impossible without a detail analysis of the processes occurring at the interfaces of heterojunctions. At the same time, the results largely depend on the purity of the starting materials and the technology of layer manufacturing. Moreover, the requirements to the composition and distribution of the impurity steadily get stringent. Therefore, the requirements regarding the methods of the impurity control and carrier distribution also become tougher both in the stage of laboratory development of the structure and in various stages of manufacturing of semiconductor devices. Electrochemical capacitance-voltage profiling is distinguished among the methods of electrical diagnostics of semiconductors by the absence of special preparation of the structures and deposition of the contacts to perform measurements, thus providing for gaining information not only about the impurity distribution but also about the distribution of free carriers. The goal of this work is to perform precise measurements of the profiles of free carrier distribution in semiconductor structures of different types, and demonstrate the measuring capabilities of a modern technique for concentration distribution diagnostics, i.e., electrochemical capacitance-voltage profiling. The method allows verification of the layer thickness in semiconductor heterostructures and provide a useful and informative feedback to technologists. To increase the resolution of the method and broad up the range of available test frequencies, a standard electrochemical profiler has been modified. Mapping data for GaAs substrate structure, the profiles of the concentration distribution of the majority charge carriers in SiC structures, GaAs structure with a p – n junction, pHEMT heterostructure, GaN heterostructure with multiple quantum wells, and in a silicon-based solar cell heterostructure are presented. The obtained results can be used to analyze the physical properties and phenomena in semiconductor devices with quantum-sized layers, as well as to improve and refine the parameters of existing electronic devices.