Abstract
Optimization of Atomic Layer Deposition (ALD) processes is critical for enhancing semiconductor performance, ensuring precise control over material deposition and thickness uniformity. This paper investigates various methodologies and strategies employed in ALD to achieve improved semiconductor device characteristics. Key factors such as precursor chemistry, deposition temperature, cycle time, and post-treatment techniques are explored to optimize ALD processes effectively. The study emphasizes the role of advanced characterization techniques in evaluating film properties and device performance enhancements resulting from optimized ALD processes.
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