Abstract
Impact of high temperature electron irradiation on the characteristics of power silicon carbide-based semiconductor devices was studied for the first time. Commercial 4H–SiC integrated Schottky diodes (JBS) with blocking voltage of 1700 V were irradiated with 0.9 MeV electrons at temperatures from 23 to 5000С in the fluence range Φ from 1 × 1016 cm−2 to 1.3 × 1017 cm−2. It was shown that ruggedness of the diodes during high temperature (“hot”) irradiation significantly exceeds the ruggedness of diodes at room temperature (“cold”) irradiation. With an increase in the irradiation temperature from 23 to 500 °C, the change in the base resistance at a fluence of 1.3 × 1017 cm−2 decreases by 6 orders of magnitude. In the entire investigated range of irradiation temperatures and fluences, irradiation does not change the height of the metal-semiconductor barrier even at the maximum fluence Φ.
Published Version
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