In this work, ultraviolet Fabry-Perot (FP) microlaser, made of an individual rectangular-shaped ZnO microwire, was achieved. The bilateral smooth facets and single-crystalline specificity of as-grown ZnO microwires can enable the realizing of lateral FP microresonators. By incorporating Ag nanowires (AgNWs), plasmon-enhanced FP lasing performances of an individual ZnO microwire, specifically for the sharply reduced threshold, increased lasing intensity and increased Q-factor, were achieved. Accordingly, the enhanced working principle was implemented, and is resorting to the confinement and enhancement of localized electromagnetic-field produced by AgNWs, which can make up the metal loss and accelerate more radiative recombination. Thereby, the incorporation of a rectangular-shaped microwire and AgNWs via desired ultraviolet plasmons can be used to exploit the modulation of metal nanostructures on lasing characteristics of wide bandgap semiconductors. Further, this study also suggestes that AgNWs with excellent ultraviolet plasmons can be generally utilized to modulate the optoelectronic characteristics of wide bandgap semiconductor materials and devices, indicating its underlying applications in fabricating high-performance light-emitting diodes and lasers, photodetectors and so on, working in the ultraviolet wavelengths.