Semiconductor Layers Research Articles

Control of Polar/Antipolar Layered Organic Semiconductors by the Odd-Even Effect of Alkyl Chain.

Some rodlike organic molecules exhibit exceptionally high layered crystallinity when composed of a link between π-conjugated backbone (head) and alkyl chain (tail). These molecules are aligned side-by-side unidirectionally to form self-organized polar monomolecular layers, providing promising 2D materials and devices. However, their interlayer stacking arrangements have never been tunable, preventing the unidirectional arrangements of molecules in whole crystals. Here, it is demonstrated that polar/antipolar interlayer stacking can be systematically controlled by the alkyl carbon number n, when the molecules are designed to involve effectively weakened head-to-head affinity. They exhibit remarkable odd-even effect in the interlayer stacking: alternating head-to-head and tail-to-tail (antipolar) arrangement in odd-n crystals, and uniform head-to-tail (polar) arrangement in even-n crystals. The films show excellent field-effect transistor characteristics presenting unique polar/antipolar dependence and considerably improved subthreshold swing in the polar films. Additionally, the polar films present enhanced second-order nonlinear optical response along normal to the film plane. These findings are key for creating polarity-controlled optoelectronic materials and devices.

Interlayer-coupling-engineerable flat bands in twisted MoSi2N4bilayers.

The two-dimensional layered semiconductor MoSi2N4, which has several advantages including high strength, excellent stability, high hole mobility, and high thermal conductivity, was recently successfully synthesized using chemical vapor deposition. Based on first-principles calculations, we investigate the effects of the twist angle and interlayer distance variation on the electronic properties of twisted bilayer MoSi2N4. The flat bands are absent for twisted bilayer MoSi2N4when the twist angleθis reduced to 3.89°. Taking twisted bilayer MoSi2N4withθof 5.09° as an example, we find that flat bands emerge as the interlayer distance decreases. As the interlayer distance can be effectively modulated by hydrostatic pressure, we propose hydrostatic pressure as a knob for tailoring the flat bands in twisted bilayer MoSi2N4. Our findings provide theoretical support for extending the applications of MoSi2N4in strong correlation physics and superconductivity.

Optimization Thickness of Photoanode Layer and Membrane as Electrolyte Trapping Medium for Improvement Dye-Sensitized Solar Cell Performance

Dye-Sensitized Solar Cells (DSSC) are photovoltaic devices that contain a dye that acts as a solar light acceptor. The use of dyesensitized solar cells to solve increasing energy demand and environmental problems still results in low efficiency values. In this study, optimization of DSSC components was carried out to increase DSSC efficiency by varying the thickness of the titanium dioxide (TiO2) semiconductor photoanode layer, polyvinylidene fluoride (PVDF) trap electrolyte membrane, and polyvinylidene fluoride nanofiber (PVDF NF) to obtain the optimum thickness. Scanning Electron Microscope (SEM) results of membrane thickness variation and titanium dioxide (TiO2) semiconductor photoanode coating showed the formation of nanofiber fibers composed of three-dimensional, porous, and diameter networks connected to the PVDF NF membrane. The increase in density and decrease in pore size, along with an increase in thickness and cracking as the TiO2 photoanode semiconductor layer increases, affect the electron transport rate of the DSSC. The higher particle density level will inhibit the electron transport rate, so it can reduce the efficiency of DSSC. The optimum thickness of the TiO2 semiconductor layer and PVDF NF electrolyte membrane of 0.20 mm and 0.35 mm can produce values, voltage, fill factor current density, and electrical efficiency of 500 mV, 2.7 x 10−3 mA.cm−2, 1.80%, and 2.40%, respectively.

Grafting Electron-Accepting Fragments on [4]cyclo-2,7-carbazole Scaffold: Tuning the Structural and Electronic Properties of Nanohoops.

Since the first applications of nanohoops in organic electronics appear promising, the time has come to go deeper into their rational design in order to reach high-efficiency materials. To do so, systematic studies dealing with the incorporation of electron-rich and/or electron-poor functional units on nanohoops have to be performed. Herein, the synthesis, the electrochemical, photophysical, thermal, and structural properties of two [4]cyclo-2,7-carbazoles, [4]C-Py-Cbz, and [4]C-Pm-Cbz, possessing electron-withdrawing units on their nitrogen atoms (pyridine or pyrimidine) are reported. The synthesis of these nanohoops is first optimized and a high yield above 50% is reached. Through a structure-properties relationship study, it is shown that the substituent has a significant impact on some physicochemical properties (eg HOMO/LUMO levels) while others are kept unchanged (eg fluorescence). Incorporation in electronic devices shows that the most electrically efficient Organic Field-Effect transistors are obtained with [4]C-Py-Cbz although this compound does not present the best-organized semiconductor layer. These experimental data are finally confronted with the electronic couplings between the nanohoops determined at the DFT level and have highlighted the origin in the difference of charge transport properties. [4]C-Py-Cbz has the advantage of a more 2D-like transport character than [4]C-Pm-Cbz, which alleviates the impact of defects and structural organization.

Intense pulsed light annealing of solution-based indium–gallium–zinc–oxide semiconductors with printed Ag source and drain electrodes for bottom gate thin film transistors

In this study, an intense pulsed light (IPL) annealing process for a printed multi-layered indium–gallium–zinc–oxide (IGZO) and silver (Ag) electrode structure was developed for a high performance all-printed inorganic thin film transistor (TFT). Through a solution process using IGZO precursor and Ag ink, the bottom gate structure TFT was fabricated. The spin coating method was used to form the IGZO semiconductor layer on a heavily-doped silicon wafer covered with thermally grown silicon dioxide. The annealing process of the IGZO layer utilized an optimized IPL irradiation process. The Ag inks were printed on the IGZO layer by screen printing to form the source and drain (S/D) pattern. This S/D pattern was dried by near infrared radiation (NIR) and the dried S/D pattern was sintered with intense pulsed light by varying the irradiation energy. The performances of the all-printed TFT such as the field effect mobility and on–off ratio electrical transfer properties were measured by a parameter analyzer. The interfacial analysis including the contact resistance and cross-sectional microstructure analysis is essential because diffusion phenomenon can occur during the annealing and sintering process. Consequently, this TFT device showed noteworthy performance (field effect mobility: 7.96 cm2/V s, on/off ratio: 107). This is similar performance compared to a conventional TFT, which is expected to open a new path in the printed metal oxide-based TFT field.

Charge injection characteristics and charge migration mechanism of magnetic particle-modified EBA-based semi-conductive shielding layers

The space charge accumulation problem within insulation layer of high voltage direct current (HVDC) cable in engineering applications has attracted much attention. The inner semi-conductive shielding layer is located between the conductor and the insulation layer, which is the only way for charge injection into the insulation layer. The performance of the inner semi-conductive shielding layer has an important influence on the charge accumulation of the insulation layer. In this paper, the matrix resin EBA of high voltage grade DC cable shielding material is used as the research object. The magnetic particle SrFe12O19 is used to modify the EBA-based shielding material. The semi-conductive composites of CB/SrFe12O19/EBA with different SrFe12O19 concentrations (with different Lorentz Forces) are prepared. The mechanism of the influence of Lorentz Forces on the space charge injection characteristics of insulation layers and the mechanism of the charge migration are investigated. The trajectories of space charges in shielding layers are simulated using the finite element method. The experimental results show that SrFe12O19 can significantly reduce the space charge accumulation of the insulation layer. When SrFe12O19 is 5%, the shielding layer has the most obvious inhibition effect on the charge injection of the insulation layer. The simulation results show that the critical value of magnetic induction intensity is B′= 0.6 T when space charge moves in the shielding layer. This work provides a new way to solve the problem of space charge accumulation in HVDC cables, and has important reference significance for the development of HVDC cables.

Observation of large spin-polarized Fermi surface of a magnetically proximitized semiconductor quantum well

The magnetic proximity effect (MPE) attracts much attention as a promising way for introducing ferromagnetism into a nonmagnetic electron-transport channel. Although the range of MPE is generally limited to the interface, it is extended to several tens of nm in high-quality semiconductor bilayers consisting of a nonmagnetic quantum well (QW) and an underlying ferromagnetic semiconductor (FMS) layer. To elucidate the mechanism of this long-range MPE, it is essential to observe the magnetically proximitized electronic structure of the nonmagnetic semiconductor. Here, by investigating the Shubnikov - de Haas oscillations in nonmagnetic n-type InAs QW / FMS (Ga,Fe)Sb bilayers, we successfully observe the spin-polarized Fermi surface of the InAs QW. The spontaneous spin-splitting energy in the conduction band of the InAs QW reaches 18 meV when applying a negative gate voltage. This large and gate-tunable spin-polarized Fermi surface of a magnetically proximitized InAs QW provides an ideal platform for novel spintronic and topological devices.

Acetylene-extended triarylamines for solution-processable p-channel OFETs

New acetylene-extended molecules were developed as a semiconducting layer for application in solution-processable organic field-effect transistors through coupling reactions using substituted triphenylamines as wings and diacetylene as spacer units. The influence of donor ability and spacer strength on the electrical properties was explored by developing different acetylene-extended triarylamines with D–π and D–π–π–D architectures and their structure–properties analysis. Their optical studies revealed narrow Stoke's shift and optical bandgap values, especially for highly electron-rich systems. Encouraging results supported by their electrochemical studies that revealed high HOMO energy levels ranging from –5.1 to –5.3 eV suggested a low energy barrier and good hole-transporting ability, hence, their applicability as p-channel OFETs. Furthermore, the extended conjugation in D–π–π–D based molecules relative to their corresponding D–π system caused enhanced molecular orbital overlap along the triphenylamine and facilitated good charge transport characteristics. Upon fabrication as the semiconducting channel in top-gate/bottom-contact OFET devices, the acetylene-extended D–π–π–D system showed good p-channel properties with hole mobilities up to 1.2 cm2/Vs and the highest on/off ratio of 107.

Nanoscale Probing of Electrical Memory Effects in van der Waals Layered PdSe2.

Tunable electronic materials that can be switched between different impedance states are fundamental to the hardware elements for neuromorphic computing architectures. This "brain-like" computing paradigm uses highly paralleled and colocated data processing, leading to greatly improved energy efficiency and performance compared to traditional architectures in which data have to be frequently transferred between processor and memory. In this work, we use scanning microwave impedance microscopy for nanoscale electrical and electronic characterization of two-dimensional layered semiconductor PdSe2 to probe neuromorphic properties. The local resolution of tens of nanometers reveals significant differences in electronic behavior between and within PdSe2 nanosheets (NSs). In particular, we detected both n-type and p-type behaviors, although previous reports only point to ambipolar n-type dominating characteristics. Nanoscale capacitance-voltage curves and subsequent calculation of characteristic maps revealed a hysteretic behavior originating from the creation and erasure of Se vacancies as well as the switching of defect charge states. In addition, stacks consisting of two NSs show enhanced resistive and capacitive switching, which is attributed to trapped charge carriers at the interfaces between the stacked NSs. Stacking n- and p-type NSs results in a combined behavior that allows one to tune electrical characteristics. As local inhomogeneities of electrical and electronic behavior can have a significant impact on the overall device performance, the demonstrated nanoscale characterization and analysis will be applicable to a wide range of semiconducting materials.

Multilayer Bolometric Structures for Efficient Wideband Communication Signal Reception.

It is known that the dielectric layer (resonator) located behind the conducting plate of the bolometer system can significantly increase its sensitivity near the resonance frequencies. In this paper, the possibility of receiving broadband electromagnetic signals in a multilayer bolometric meta-material made of alternating conducting (e.g., silicon semiconductor) and dielectric layers is demonstrated both experimentally and numerically. It is shown that such a multilayer structure acts as a lattice of resonators and can significantly increase the width of the frequency band of efficient electromagnetic energy absorption. The parameters of the dielectric and semiconductor layers determine the frequency bands. Numerical modeling of the effect has been carried out under the conditions of our experiment. The numerical results show acceptable qualitative agreement with the experimental data. This study develops the previously proposed technique of resonant absorption of electromagnetic signals in bolometric structures.

Ruddlesden–Popper Tin‐Based Halide Perovskite Field‐Effect Transistors

Tin‐based halide perovskites garner attention as a promising semiconducting layer material for field‐effect transistors (FETs) owing to their lower effective mass than their lead‐based counterparts. However, they suffer from low ambient stability because Sn2+ is readily oxidized to Sn4+ in air. To address this issue, Ruddlesden–Popper (RP) perovskites featuring large organic cations emerge as promising materials for FETs. In this article, a comprehensive overview of the properties and advantages of RP‐phase tin‐based halide perovskites used in FETs are provided. Recent advancements in 2D and 2D/3D RP tin‐based perovskite FETs are examined, and challenges related to the fabrication of uniform large‐area films and strategies for improving ambient stability and operational durability are discussed. In this review article, the potential of RP perovskites for FET applications is emphasized and the need for further research to unlock their full potential is highlighted.

Thermally activated escape rate and dynamics of a particle under a harmonic potential

In this paper, we study the dynamics of particles along a semiconductor layer by imposing a confinement potential assisted by both thermal noise strength D and trap potential ϕ. By applying a nonhomogeneous cold temperature alongside the uniform background temperature, the system is driven towards a phase transition. When a weak signal is pass across a semiconductor layer, the thermally activated particles become easily hop from one lattice site to another lattice site. We perform a numerical simulation of the trajectory of a particle under a harmonic potential represents a bistable and tristable effective potential as a function of thermal noise. As a result, at an optimal level of noise, the particle synchronizes with a weak periodic signal.

Advances in the structural engineering of layered bismuth-based semiconductors for visible light-driven photocatalytic water splitting.

Hydrogen production via the photocatalytic water splitting reaction on semiconductors presents a promising avenue to directly achieve solar energy conversion and storage. Bismuth-based semiconductors with layered structures, a hierarchical arrangement of components stacked in the form of two-dimensional extended layers where the atoms within each layer are typically strongly bonded, while the interactions between the layers are relatively weak, have emerged as an important series of photocatalyst candidates. In this review, we focus on the new emerging layered bismuth-based semiconductors with structures in Sillén, Aurivillius, Sillén-Aurivillius and bismuth chromate systems primarily employed in the photocatalytic water splitting reaction. From a crystal structure-oriented view, we delve into discussions on how the component and unit of a crystal structure influence the intrinsic properties, including light absorption and photogenerated charge transfer and separation, of materials as well as the corresponding photocatalytic performance of the water splitting reaction. The strategies for modulating the ferroelectricity and surface modification of these layered bismuth-based semiconductors are also involved. We also discuss the limitations of these materials accompanied by a forward-looking perspective, and we hope to provide some insights from the view of rational material design and engineering for the fabrication of high-efficiency photocatalytic water splitting systems.

Structural anisotropy in Sb thin films

Sb thin films have attracted wide interest due to their tunable band structure, topological phases, high electron mobility, and thermoelectric properties. We successfully grow epitaxial Sb thin films on a closely lattice-matched GaSb(001) surface by molecular beam epitaxy. We find a novel anisotropic directional dependence on their structural, morphological, and electronic properties. The origin of the anisotropic features is elucidated using first-principles density functional theory (DFT) calculations. The growth regime of crystalline and amorphous Sb thin films was determined by mapping the surface reconstruction phase diagram of the GaSb(001) surface under Sb2 flux, with confirmation of structural characterizations. Crystalline Sb thin films show a rhombohedral crystal structure along the rhombohedral (211) surface orientation parallel to the cubic (001) surface orientation of the GaSb substrate. At this coherent interface, Sb atoms are aligned with the GaSb lattice along the [1̄10] crystallographic direction but are not aligned well along the [110] crystallographic direction, which results in anisotropic features in reflection of high-energy electron diffraction patterns, misfit dislocation formation, surface morphology, and transport properties. Our DFT calculations show that the preferential orientation of the rhombohedral Sb (211) plane may originate from the GaSb surface, where Sb atoms align with the Ga and Sb atoms on the reconstructed surface. The formation energy calculations confirm the stability of the experimentally observed structures. Our results provide optimal film growth conditions for further studies of novel properties of Bi1−xSbx thin films with similar lattice parameters and an identical crystal structure, as well as functional heterostructures of them with III–V semiconductor layers along the (001) surface orientation, supported by a theoretical understanding of the anisotropic film orientation.

Valley-selective carrier transfer in SnS-based van der Waals heterostructures.

Valleytronics, i.e., use of the valley degree of freedom in semiconductors as an information carrier, is a promising alternative to conventional approaches for information processing. Transition metal dichalcogenides with degenerate K/K' valleys have received attention as prototype 2D/layered semiconductors for valleytronics, but these systems rely on exotic effects such as the valley-Hall effect for electrical readout of the valley occupancy. Non-traditional valleytronic systems hosting sets of addressable non-degenerate valleys could overcome this limitation. In the van der Waals semiconductor Sn(II) sulfide (SnS), for instance, different bandgaps and band edges may allow manipulating the population of the X- and Y-valleys via charge transfer across interfaces to other layered semiconductors. Here, we establish this concept by comparing SnS flakes and SnS-based heterostructures. Cathodoluminescence spectroscopy shows a striking reversal of the luminescence intensity of the two valleys in SnS-GeS van der Waals stacks, which stems from a selective electron transfer from the Y-valley into GeS while X-valley electrons remain confined to SnS. Our results suggest that non-traditional systems, embodied here by SnS-based van der Waals heterostructures, open avenues for valley-selective readout relying on design parameters such as heterostructure band offsets that are among the core concepts of semiconductor technology.

Metal-insulator-semiconductor photoelectrodes for enhanced photoelectrochemical water splitting.

Photoelectrochemical (PEC) water splitting provides a scalable and integrated platform to harness renewable solar energy for green hydrogen production. The practical implementation of PEC systems hinges on addressing three critical challenges: enhancing energy conversion efficiency, ensuring long-term stability, and achieving economic viability. Metal-insulator-semiconductor (MIS) heterojunction photoelectrodes have gained significant attention over the last decade for their ability to efficiently segregate photogenerated carriers and mitigate corrosion-induced semiconductor degradation. This review discusses the structural composition and interfacial intricacies of MIS photoelectrodes tailored for PEC water splitting. The application of MIS heterostructures across various semiconductor light-absorbing layers, including traditional photovoltaic-grade semiconductors, metal oxides, and emerging materials, is presented first. Subsequently, this review elucidates the reaction mechanisms and respective merits of vacuum and non-vacuum deposition techniques in the fabrication of the insulator layers. In the context of the metal layers, this review extends beyond the conventional scope, not only by introducing metal-based cocatalysts, but also by exploring the latest advancements in molecular and single-atom catalysts integrated within MIS photoelectrodes. Furthermore, a systematic summary of carrier transfer mechanisms and interface design principles of MIS photoelectrodes is presented, which are pivotal for optimizing energy band alignment and enhancing solar-to-chemical conversion efficiency within the PEC system. Finally, this review explores innovative derivative configurations of MIS photoelectrodes, including back-illuminated MIS photoelectrodes, inverted MIS photoelectrodes, tandem MIS photoelectrodes, and monolithically integrated wireless MIS photoelectrodes. These novel architectures address the limitations of traditional MIS structures by effectively coupling different functional modules, minimizing optical and ohmic losses, and mitigating recombination losses.

Potassium hydroxide treatment of layered WSe2 with enhanced electronic performances.

2D WSe2-based electronic devices have received much research interest. However, it is still a challenge to achieve high electronic performance in WSe2-based devices. In this work, we report greatly enhanced performances of different thickness WSe2 ambipolar transistors and demonstrate homogeneous WSe2 inverter devices, which are obtained by using a semiconductor processing-compatible layer removal technique via chemical removal of the surface top WOx layer formed by O2 plasma treatment. Importantly, monolayer WSe2 was realised after several consecutive removal processes, demonstrating that the single layer removal is accurate and reliable. After subsequent removal of the top layer WOx by KOH, the fabricated WSe2 field-effect transistors exhibit greatly enhanced electronic performance along with the high electron and hole mobilities of 40 and 85 cm2 V-1 s-1, respectively. Our work demonstrates that the layer removal technique is an efficient route to fabricate high performance 2D material-based electronic devices.

Analytical Model for Investigating Linear and Non-linear Behaviour of Thin Semi-conductive Layers on Insulator Surface

Analytical Model for Investigating Linear and Non-linear Behaviour of Thin Semi-conductive Layers on Insulator Surface

Novel majority carrier accumulation insulated gate bipolar transistor with Schottky junction

Insulated gate bipolar transistor (IGBT) is the core of modern power semiconductor device, and has been widely used due to its excellent electrical characteristics. A novel majority carrier accumulation mode IGBT with Schottky junction contact gate semiconductor layer (AC-SCG IGBT) is proposed and investigated by TCAD simulation in this article. When the AC-SCG IGBT is in the on-state, a forward bias is applied to the gate. Due to the very low forward voltage drop (<i>V</i><sub>F</sub>) of the Schottky barrier diode, the potential of the gate semiconductor layer is almost equal to the gate potential, which can accumulate a large number of majority carrier electrons in the drift region. In addition to the electrons existing, these accumulated electrons increase the conductivity of the drift region, thus significantly reducing <i>V</i><sub>F</sub>. Therefore, the doping concentration of the drift region is not limited by <i>V</i><sub>F</sub>. The lightly doped drift region can make AC-SCG IGBT have a higher breakdown voltage (BV). Moreover, it also reduces the barrier capacitance in the turn-off process, thus the overall Miller capacitance is small, which can quickly turn off and reduce the turn-off time (<i>T</i><sub>off</sub>) and turn-off loss (<i>E</i><sub>off</sub>). The simulation results indicate that at the BV of 600 V, the <i>V</i><sub>F</sub> of 0.84 V for the proposed AC-SCG IGBT is reduced by 46.2% compared with that for the conventional IGBT (<i>V</i><sub>F</sub> of 1.56 V). The <i>E</i><sub>off</sub> of the AC-SCG IGBT (0.77 mJ/cm<sup>2</sup>) is reduced by 52.5% compared with that for the conventional IGBT (1.62 mJ/cm<sup>2</sup>), and the <i>T</i><sub>off</sub> (155.8–222.7 ns) is reduced by 30%. The contradiction between <i>V</i><sub>F</sub> and <i>E</i><sub>off</sub> is eliminated. In addition, the proposed AC-SCG IGBT has a better anti-latch-up capability and is coupled with its higher BV, so it has a larger forward biased safe operating area (FBSOA). The proposed novel structure meets the development requirements for future IGBT device performance, and has great significance for guiding the development of the power semiconductor device field.

The role of spontaneous orientation polarization on charge storage behavior at an interface between organic semiconductor layers

Optically generated carriers are pinned at the organic/organic interface if the two organic layers have a large polarization difference, underlining that the combination of polar molecules is crucial to extend the carrier lifetime.