Abstract
In this paper, we study the dynamics of particles along a semiconductor layer by imposing a confinement potential assisted by both thermal noise strength D and trap potential ϕ. By applying a nonhomogeneous cold temperature alongside the uniform background temperature, the system is driven towards a phase transition. When a weak signal is pass across a semiconductor layer, the thermally activated particles become easily hop from one lattice site to another lattice site. We perform a numerical simulation of the trajectory of a particle under a harmonic potential represents a bistable and tristable effective potential as a function of thermal noise. As a result, at an optimal level of noise, the particle synchronizes with a weak periodic signal.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
