Abstract
Tin‐based halide perovskites garner attention as a promising semiconducting layer material for field‐effect transistors (FETs) owing to their lower effective mass than their lead‐based counterparts. However, they suffer from low ambient stability because Sn2+ is readily oxidized to Sn4+ in air. To address this issue, Ruddlesden–Popper (RP) perovskites featuring large organic cations emerge as promising materials for FETs. In this article, a comprehensive overview of the properties and advantages of RP‐phase tin‐based halide perovskites used in FETs are provided. Recent advancements in 2D and 2D/3D RP tin‐based perovskite FETs are examined, and challenges related to the fabrication of uniform large‐area films and strategies for improving ambient stability and operational durability are discussed. In this review article, the potential of RP perovskites for FET applications is emphasized and the need for further research to unlock their full potential is highlighted.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
