Self-organized Quantum Dots Research Articles

Molecular beam epitaxy of AlGaAs/Zn(Mn)Se hybrid nanostructures with InAs/AlGaAs quantum dots near the heterovalent interface

Features of the growth of InAs quantum dots in an Al0.35Ga0.65As matrix by molecular beam epitaxy at different substrate temperatures, deposition rates, and amounts of deposited InAs are studied. The optimum conditions for growing an array of low-density (≤2 × 1010 cm−2) small (height of no more than 4 nm) self-organized quantum dots are determined. The possibility of the formation of optically active InAs quantum dots emitting in the energy range 1.3–1.4 eV at a distance of no more than 10 nm from the coherent heterovalent GaAs/ZnSe interface is demonstrated. It is established that inserting an optically inactive 5-nm GaAs quantum well resonantly coupled with InAs quantum dots into the upper AlGaAs barrier layer enhances the photoluminescence efficiency of the quantum-dot array in hybrid heterostructures.

Real-time observation of nanoscale topological transitions in epitaxial PbTe/CdTe heterostructures

The almost completely immiscible PbTe/CdTe heterostructure has recently become a prototype system for self-organized quantum dot formation based on solid-state phase separation. Here, we study by real-time transmission electron microscopy the topological transformations of two-dimensional PbTe-epilayers into, first, a quasi-one-dimensional percolation network and subsequently into zero-dimensional quantum dots. Finally, the dot size distribution coarsens by Ostwald ripening. The whole transformation sequence occurs during all stages in the fully coherent solid state by bulk diffusion. A model based on the numerical solution of the Cahn-Hilliard equation reproduces all relevant morphological and dynamic aspects of the experiments, demonstrating that this standard continuum approach applies to coherent solids down to nanometer dimensions. As the Cahn-Hilliard equation does not depend on atomistic details, the observed morphological transformations are general features of the model. To confirm the topological nature of the observed shape transitions, we developed a parameter-free geometric model. This, together with the Cahn-Hilliard approach, is in qualitative agreement with the experiments.

Heterostructures with self-organized quantum dots of Ge on Si for optoelectronic devices

AbstractIn this paper an analysis of tendencies of Ge on Si quantum dots nanoheterostructures’ usage in different optoelectronic devices such as, for example, solar cells and photodetectors of visible and infra-red regions is carried out; a complex mathematical model for calculation of dependency on growth conditions of self-organized quantum dots of Ge on Si grown using the method of molecular beam epitaxy parameters is described. Ways of segregation effect and underlying layers’ influence are considered. It is shown that for realization of good device characteristics quantum dots should have high density, small sizes, uniformity, and narrow size distribution function. The desirable parameters of arrays of square and rectangular quantum dots for device application are attainable under certain growth conditions.

Combined influence of Coulomb interaction and polarons on the carrier dynamics in InGaAs quantum dots

Experimental results for the carrier capture and relaxation dynamics in self-organized semiconductor quantum dots are analyzed using a microscopic theory. Time-resolved differential transmission changes of the quantum-dot transitions after ultrafast optical excitation of the barrier states are studied in a wide range of carrier temperatures and excitation densities. The measurements can be explained by quantum-dot polaron scattering and their excitation-dependent renormalization due to additional Coulomb scattering processes. Results of configuration-picture and single-particle-picture descriptions, both with nonperturbative transition rates, show good agreement with the experiments while Boltzmann scattering rates lead to a different excitation density and temperature dependence.

InGaN/GaN Quantum Dot Red $(\lambda=630~{\rm nm})$ Laser

Lasers emitting in the 600 nm wavelength range have gained attention for a number of important applications, including optical information processing, plastic fiber communication systems, optical storage, and full color (RGB) laser displays and laser projectors. Visible lasers are currently realized with GaN-based heterostructures having InGaN/GaN quantum wells as the gain media. The performance of these devices, particularly at longer wavelengths, is limited by materials inhomogeneity and effects related to a large strain-induced polarization in the quantum wells. A laser emitting in the red (λ ~ 630 nm) has not been realized. Here, we demonstrate lasers which emit at 630 nm, the longest wavelength achieved with the nitride system, by incorporating InGaN/GaN self-organized quantum dots as the gain media. Strain relaxation during dot formation results in reduced polarization fields and consequently low threshold current density, Jth=2.5 kA/cm2, small blue shift of the emission peak, very weak temperature dependenc eof Jth (T0=236 K), and linearly TE polarized output.

Optical investigation of InAs quantum dashes grown on InP(0 0 1) vicinal substrate

We investigate with photoluminescence (PL) measurements the optoelectronic properties of self-organized InAs quantum dots (QDs) grown on nominal InP(001) substrate. InAs/InP(001) QDs are grown by Molecular Beam Epitaxy (MBE) method with optimized conditions in Stranski-Krastanov regime. A lateral coupling behavior was shown by photoluminescence spectroscopy. This phenomena is considered as a degradation source of the optoelectronic properties of InAs/InP(001) QDs used in lasers applications. In order to overcome this disadvantage behavior, we have studied the optical properties of InAs quantum islands (QIs) grown on vicinal InP(001) with 2° off miscut angle toward the [110] direction. From Polarized Photoluminescence (PPL) measurements, we have deduced that InAs quantum nanostructures have quantum dashes (QDas) form elongated in [1–10] direction. From excitation density PL measurements, we have evidenced that the different observed PL peaks are attributed to the emission of InAs QDas of different size. The lateral coupling behavior is completely eliminated in the case of this sample. The temperature-dependent PL measurements show a good thermal stability and an emission wavelength at room temperature around 1.55μm of the vicinal sample. All these properties prove that this sample possess favorable characteristics for microlasers based devices functioning at room temperature and for optical telecommunication with long range weapon. The broad emission range observed at 300K of the vicinal sample gives the possibility to use it as an active zone in solar cells and in infrared photodectectors of high optical gain and excellent sensitivity on a wide energy range.

Comparative analysis of pyramidal and wedge-like quantum dots formation kinetics in Ge/Si(001) system

In this work complex mathematical model for calculation of dependencies on growth conditions of parameters of self-organized quantum dots (QDs) of Ge on Si grown by the method of molecular beam epitaxy (MBE) is described. Calculations on pyramidal and elongated islands formation energies in Ge/Si(001) system with respect to surface energy, elastic strains relaxation and attraction of atoms to substrate decreasing are done. On the basis of well-known model based on generalization of classical nucleation theory it is shown that wedge-like clusters form later than pyramidal but begin to dominate in the QDs massive on the later stages of growth. Conclusions from the described theory correspond to the experimental observations.

Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots

Self-organized InGaN quantum dots (QDs) with emission wavelength from green to red range have been grown on GaN templated c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The effects of matrix layer composition on the structural and optical properties of InGaN QDs have been investigated. A continued growth of QDs is observed during the growth of In0.1Ga0.9N matrix layer, which results in an increase of the QDs' size. By using In0.1Ga0.9N matrix layer instead of GaN one, the annealing induced blue-shift in emission energy of the InGaN QDs can be suppressed. After the growth of top GaN cap layer, a larger red-shift caused by the quantum confined Stark effect is observed in the sample with In0.1Ga0.9N matrix layer. Employing this method, InGaN QD sample emitting at 615 nm with an internal quantum efficiency of 24.3% has been grown. The significance of this method is that it allows a higher growth temperature of InGaN QDs with emission wavelength in the green range to improve the crystalline quality, which is beneficial to enhance the efficiency of green InGaN QD light-emitting-diodes and laser diodes.

Optically pumped rolled-up InAs/InGaAsP quantum dash lasers at room temperature

We have investigated the fabrication and optical performance of free-standing rolled-up InGaAsP tube optical cavities, wherein self-organized InAs quantum dots or dashes are incorporated as the gain media. Such tubular optical cavities are formed when the coherently strained InAs/InGaAsP quantum dot/dash nanomembrane is selectively released from the host substrate. We have achieved lasing from rolled-up InAs/InGaAsP quantum dash microtubes at room temperature under continuous wave optical pumping. The measured threshold is ∼6 µW, and the Purcell factor and the spontaneous emission coupling factor are estimated to be ∼6.54 and ∼0.87, respectively.

Self-organized colloidal quantum dots and metal nanoparticles for plasmon-enhanced intermediate-band solar cells

A colloidal deposition technique is presented to construct long-range ordered hybrid arrays of self-assembled quantum dots and metal nanoparticles. Quantum dots are promising for novel opto-electronic devices but, in most cases, their optical transitions of interest lack sufficient light absorption to provide a significant impact in their implementation. A potential solution is to couple the dots with localized plasmons in metal nanoparticles. The extreme confinement of light in the near-field produced by the nanoparticles can potentially boost the absorption in the quantum dots by up to two orders of magnitude. In this work, light extinction measurements are employed to probe the plasmon resonance of spherical gold nanoparticles in lead sulfide colloidal quantum dots and amorphous silicon thin-films. Mie theory computations are used to analyze the experimental results and determine the absorption enhancement that can be generated by the highly intense near-field produced in the vicinity of the gold nanoparticles at their surface plasmon resonance. The results presented here are of interest for the development of plasmon-enhanced colloidal nanostructured photovoltaic materials, such as colloidal quantum dot intermediate-band solar cells.

Quantum dot rolled-up microtube optoelectronic integrated circuit

A rolled-up microtube optoelectronic integrated circuit operating as a phototransceiver is demonstrated. The microtube is made of a InGaAs/GaAs strained bilayer with InAs self-organized quantum dots inserted in the GaAs layer. The phototransceiver consists of an optically pumped microtube laser and a microtube photoconductive detector connected by an a-Si/SiO2 waveguide. The loss in the waveguide and responsivity of the entire phototransceiver circuit are 7.96 dB/cm and 34 mA/W, respectively.

Quantum dot growth on a stripe-pattern

We study the development of the Asaro-Tiller-Grinfel'd instability on a thin strained film on top of a stripe-patterned substrate and the subsequent growth of self-organized quantum dots. We use a continuum model describing the evolution equation enforced by surface diffusion. We compute the elastic energy up to the first non-linear order and investigate the long time dynamics which describes the dot growth. We find different island locations depending on the substrate wavelength and thickness. As found in experiments, the instability long-time dynamics leads to islands located either on top or in the bottom of the pattern.

InGaN/GaN self-organized quantum dot lasers grown by molecular beam epitaxy

Blue-and green-emitting quantum dots have been characterized and ridge waveguide lasers incorporating such quantum dots into the active region have been realized. The laser heteroscturctures were grown by plasma assisted molecular beam epitaxy. Injected carrier lifetimes in the quantum dots have also been measured by temperature dependent and time resolved photoluminescence. A threshold current density of 930A/cm2 in the blue-emitting lasers was measured under pulsed bias. A tunnel injection scheme to inject holes has been incorporated in the design of the green quantum dot lasers, and a threshold current density of 945A/cm2 in the green-emitting lasers has been measured under pulsed bias. Slope efficiencies of 0.41W/A and 0.25W/A have been measured, corresponding to differential quantum efficiencies of 13.9% and 11.3%, in the blue and green lasers, respectively.

A quantum dot rolled-up microtube directional coupler

A rolled-up microtube directional coupler made of twin microtubes is demonstrated. The microtube is made of a InGaAs/GaAs strained bilayer and InAs self-organized quantum dots are inserted in the GaAs layer. The input and coupled microtubes have length and outer diameter of ∼50 and 6 μm, respectively. The coupling characteristics have been analyzed by the three-dimensional finite difference time domain method. The coupling characteristics have also been measured with isopropyl alcohol, instead of air, as the surrounding media to demonstrate the potential of the device as a sensor.

Magneto-optical studies of ensembles of semimagnetic self-organized Cd(Mn)Se/Zn(Mn)Se quantum dots

Ensembles of Cd(Mn)Se/Zn(Mn)Se semimagnetic self-organized quantum dots with different Mn content have been studied by photoluminescence and Raman scattering under strong magnetic fields in Faraday and Voigt geometries and with selective excitation. Electron spin-flip transitions have been observed in Voigt geometry in the structures with large Mn content, characterized by a large magnetic shift of photoluminescence bands. Narrow exciton peaks completely ${\ensuremath{\sigma}}^{\ensuremath{-}}{\ensuremath{\sigma}}^{+}$ polarized have been observed under selective excitation in the Faraday geometry in the structures with medium and small Mn content. A number of effects due to s,p-d exchange interaction and exciton magnetic polaron formation manifested themselves in the structures with the smallest Mn content, where no Zeeman shift of the photoluminescence bands was observed.

Competition between strain and confinement effects on the crystalline quality of InAs/GaAs (001) quantum dots probed by Raman spectroscopy

Self-organized quantum dots (SOQDs) of InAs/GaAs (001) prepared at low growth temperatures have been carried out by Raman spectroscopy. The structural study performed on these samples using atomic force microscopy showed the presence of two families of quantum dots, and these results were confirmed by analysis of Raman spectra. The low temperature growth leads to smaller dots with nonuniform sizes. The disagreement between the lattice parameters violated the selection rules, and all Raman modes could be observed. SOQDs Raman spectrum shows contribution from the GaAs substrate, the wetting layer, InAs quantum dots and InGaAs alloys at InAs/GaAs interface. A spatial correlation model including the different vibration modes was used to adjust the experimental result. A good agreement of theoretical and experimental results was obtained. Copyright © 2012 John Wiley & Sons, Ltd.

Device characteristics of long-wavelength lasers based on self-organized quantum dots

The current state of the field of semiconductor lasers operating in the spectral range near 1.3 μm and with an active region represented by an array of self-organized quantum dots is reviewed. The threshold and temperature characteristics of such lasers are considered; the problems of overcoming the gain saturation and of an increase in both the differential efficiency and emitted power are discussed. Data on the response speed under conditions of direct modulation and on the characteristics of lasers operating with mode synchronization are generalized. Nonlinear gain saturation, the factor of spectral line broadening, and the formation of broad gain and lasing spectra are discussed.

A portable molecular beam epitaxy system for in situ x-ray investigations at synchrotron beamlines

A portable synchrotron molecular beam epitaxy (MBE) system is designed and applied for in situ investigations. The growth chamber is equipped with all the standard MBE components such as effusion cells with shutters, main shutter, cooling shroud, manipulator, reflection high energy electron diffraction setup, and pressure gauges. The characteristic feature of the system is the beryllium windows which are used for in situ x-ray measurements. An UHV sample transfer case allows in vacuo transfer of samples prepared elsewhere. We describe the system design and demonstrate its performance by investigating the annealing process of buried InGaAs self-organized quantum dots.

Reduced thermal quenching in indium-rich self-organized InGaN/GaN quantum dots

Differences in optical and structural properties of indium rich (27%), indium gallium nitride (InGaN) self-organized quantum dots (QDs), with red wavelength emission, and the two dimensional underlying wetting layer (WL) are investigated. Temperature dependent micro-photoluminescence (μPL) reveals a decrease in thermal quenching of the QDs integrated intensity compared to that of the WL. This difference in behaviour is due to the 3-D localization of carriers within the QDs preventing them from thermalization to nearby traps causing an increase in the internal quantum efficiency of the device. Excitation power dependent μPL shows a slower increase of the QDs PL signal compared to the WL PL which is believed to be due to the QDs saturation.

Wetting layers effect on InAs/GaAs quantum dots

Abstract FEM combining with the K·P theory is adopted to systematically investigate the effect of wetting layers on the strain-stress profiles and electronic structures of self-organized InAs quantum dot. Four different kinds of quantum dots are introduced at the same height and aspect ratio. We found that 0.5 nm wetting layer is an appropriate thickness for InAs/GaAs quantum dots. Strain shift down about 3%∼4.5% for the cases with WL (0.5 nm) and without WL in four shapes of quantum dots. For band edge energy, wetting layers expand the potential energy gap width. When WL thickness is more than 0.8 nm, the band edge energy profiles cannot vary regularly. The electron energy is affected while for heavy hole this impact on the energy is limited. Wetting layers for the influence of the electronic structure is obviously than the heavy hole. Consequently, the electron probability density function spread from buffer to wetting layer while the center of hole's function moves from QDs internal to wetting layer when introduce WLs. When WLs thickness is larger than 0.8 nm, the electronic structures of quantum dots have changed obviously. This will affect the instrument's performance which relies on the quantum dots' optical properties.