Secondary Ion Mass Spectroscopy Research Articles

Phonon-assisted leakage current of InGaN light emitting diode

Abstract We report on the leakage current mechanism in a blue GaN-based light-emitting diode (LED). The device structure was grown by the MOCVD technique on a sapphire substrate. The LED was characterized through various measurements including current-voltage, electroluminescence, and secondary ion mass spectroscopy (SIMS). Capacitance-voltage measurements were employed to calculate the depletion layer thickness at different bias voltages and analyze the doping profile in the active layer. The reverse temperature-dependent current-voltage measurements were carried out to study the leakage mechanism. The leakage current was explained by phonon-assisted tunneling of charge carriers through deep trap states. The trap energy and density of states were extracted from the application of the introduced model. Cathodoluminescence measurements were performed to evaluate the density of dislocations, which were then compared to X-ray diffraction measurements. The determined value was close to the density of states obtained from the tunneling model.

Sputtering yield increase with fluence in low-energy argon plasma-tungsten interaction

The increase of tungsten sputtering yield with fluence was investigated during plasma (≤100 eV) irradiation. This analysis focused on the combined effects of surface binding energy and surface morphology caused by Ar retention. As post-mortem analysis, Ar concentration was measured with SIMS (Secondary Ion Mass Spectroscopy) and TDS (Thermal Desorption Spectroscopy). The Ar concentration saturated at 21 % of W number density during the sputtering process. The corresponding change in surface morphology causes a change in the local ion incident angle, which leads to a sputtering yield increase of 10 %. The increased Ar concentration leads to a decrease in surface binding energy and a change in surface morphology which increases W sputtering yield from 0.02 to 0.03 by ion energy 80 eV. Over time, W sputtering yield reaches saturation as a function of saturated Ar concentration. This result implies that the synergistic role of Ar concentration and surface morphology on sputtering yield. This sputtering yield enhancement occurs more seriously in the realistic condition of plasma-facing materials that face low-energy plasma.

Copper Deposited on Reduced Titania as Catalyst for the Production of CH4 from Sunlight and Air

AbstractAtmospheric CO2 and H2O adsorbed on the photocatalyst surface undergo sunlight‐assisted conversion to solar products that bridge the gaps between artificial and natural photosynthesis. Herein, we report a Lewis acid‐base interaction derived photocatalyst, Cu deposited on reduced titania, that harvests CO2 and H2O from the air and transforms them to CH4. Photocatalyst surface studies confirm that coordinately unsaturated Cu atoms and oxygen vacancies are formed that facilitate CO2 and H2O adsorption. The mechanistic studies, combined with tandem secondary ion mass spectroscopy and isotopic labelling, confirm the CH4 origin from atmosphere‐adsorbed CO2 and H2O. The contributing factors to photocatalyst instability are explored. We expect that this study will have an impact on the widespread application and economic viability of photocatalytic CO2 reduction.

Characterization of residual-resistance-ratio of Cu stabilizer in commercial REBCO tapes

Residual-resistance-ratio (RRR) of Cu stabilizer in REBCO coated conductor is an important design parameter for REBCO magnets. Cu stabilizer with high RRR is especially beneficial for quench protections of REBCO magnets. In this work, we study RRR of electroplated Cu stabilizer in commercial REBCO tapes. We present RRR of over 180 samples measured for the quality assurance programs of REBCO magnet projects at the National High Magnetic Field Laboratory, USA (NHMFL). To investigate the factors that influence RRR, several samples were analyzed extensively by using scanning electron microscopy, secondary ion mass spectroscopy, and inductively coupled plasma mass spectroscopy. We found that RRR is strongly correlated with the grain size of Cu, which suggests that resistivity at low temperatures is dominated by grain boundary resistivity. In addition, low RRR corresponds to high concentration of chlorine impurity. This is explained by that higher chlorine impurity hindered the grain growth in the self-annealing process at room temperature which resulted in smaller grain size and low RRR. Annealing at 300C significantly enlarged the grain size and enhanced RRR. Due to the concern of critical current degradation, however, annealing is not recommended as a practical method to improve RRR of Cu in REBCO tapes.

Progressive quenching of luminescence from quantum dot thin films in proximity with ZnMgO in unencapsulated stacks

ZnMgO nanoparticles (NPs) are being increasingly used as the electron transport layer (ETL) in state-of-the-art quantum-dot light-emitting devices (QLEDs) instead of ZnO. However, the impact of ZnMgO on the luminescence properties of quantum dots (QDs) is much less understood. Here, we compare ZnMgO and ZnO NPs for their quenching effect on Cd-based QDs photoluminescence (PL), immediately and over time. Time-resolved photoluminescence (TRPL) and steady-state PL results show that ZnMgO NPs decreases the QDs’ luminescence more than ZnO NPs and that the behavior continues progressively over time. The surface topography of the samples containing different ETLs is studied using atomic force microscopy (AFM) and optical PL images. Additionally, time of flight secondary ion mass spectroscopy (TOF-SIMS) measurements are conducted to investigate the potential diffusion of some species from ETL into the QDs layer. The results confirm that morphological changes and out-diffusion of some species from the ZnMgO layer can likely play a role in the QDs PL quenching. This study sheds light on the limitations of ZnMgO for the long-term stability of QLEDs, specifically for blue QLEDs where using ZnMgO is essential for efficient electron injection.

Large-area (50 cm × 50 cm) optically transparent electromagnetic interference (EMI) shielding of ZTO/Ag/ZTO: an analytical/numerical and experimental study of optoelectrical and EMI shielding properties

Transparent conducting oxides (TCOs), exhibiting both high optical transparency and low electrical resistivity, are commonly employed in optoelectronic devices. However, acquiring a balance between these optical and electrical properties in a uniform way over large areas has been a pending challenge, which is essential to achieving optically transparent electromagnetic interference (EMI) shielding surfaces. In this study, we propose and demonstrate a stratified thin film structure consisting of zinc-doped tin oxide (Zn2SnO4, ZTO) as TCO along with a metal layer of silver (Ag) deposited on a large area of 50 cm × 50 cm polycarbonate (PC) substrate enabled by a scanning magnetron sputtering gun. We achieved high EMI shielding of 99.9% at the optical transparency of 68% in the visible spectrum by engineering the stratified architecture of ZTO/Ag/ZTO. The Ag layer of 18 nm in thickness with a sheet resistance of 10 Ω/sq yields shielding effectiveness (SE) of 27 dB in a wide frequency range of 2–20 GHz. The bottom and top ZTO layers, 20 and 40 nm thick, respectively, provide the lowest optical loss of 13% across 400–700 nm. The structure’s EMI shielding, optical and structural performances were systematically characterized through a free-space focused-beam system, UV–Vis spectrophotometer, ellipsometry, focused ion-beam cross-sectional sampling and imaging, transmission electron microscopy, atomic force microscopy and secondary ion mass spectroscopy. EMI shielding and optical performances were validated by CST Microwave Studio and the transfer matrix method, respectively. These findings indicate that the proposed multi-layer architecture holds great promise for large-area EMI shielding and other optoelectronic applications.

Effect of Bias Potential on the Interface of a Solid Electrolyte and Electrode during XPS Depth Profiling Analysis.

Depth profiling is an essential method to investigate the physical and chemical properties of a solid electrolyte and electrolyte/electrode interface. In conventional depth profiling, various spectroscopic tools such as X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) are utilized to monitor the chemical states along with ion bombardment to etch a sample. Nevertheless, the ion bombardment during depth profiling results in an inevitable systematic error, i.e., the accumulation of mobile ions at the electrolyte/electrode interface, known as the ion pile-up phenomenon. Here, we propose a novel method using bias potential, the substrate-bias method, to prevent the ion pile-up phenomena during depth profiling of a solid electrolyte. When the positive bias potential is applied on the substrate (electrode), the number of accumulating ions at the electrolyte/electrode interface is significantly reduced. The in-depth XPS analysis with the biased electrode reveals not only the suppression of the ion pile-up phenomena but also the altered chemical states at the interfacial region between the electrolyte and electrode depending on the bias. The proposed substrate-bias method can be a good alternative scheme for an efficient yet precise depth profiling technique for a solid electrolyte.

Impact of Residual Compositional Inhomogeneities on the MCT Material Properties for IR Detectors.

HgCdTe is a well-known material for state-of-the-art infrared photodetectors. The interd-iffused multilayer process (IMP) is used for Metal-Organic Chemical Vapor Deposition (MOCVD) of HgCdTe heterostructures, enabling precise control of composition. In this method, alternating HgTe and CdTe layers are deposited, and they homogenize during growth due to interdiffusion, resulting in a near-uniform material. However, the relatively low (350 °C) IMP MOCVD growth temperature may result in significant residual compositional inhomogeneities. In this work, we have investigated the residual inhomogeneities in the IMP-grown HgCdTe layers and their influence on material properties. Significant IMP growth-related oscillations of composition have been revealed in as-grown epilayers with the use of a high-resolution Secondary Ion Mass Spectroscopy (SIMS). The oscillations can be minimized with post-growth annealing of the layers at a temperature exceeding that of growth. The electric and photoelectric characterizations showed a significant reduction in the background doping and an increase in the recombination time, which resulted in dramatic improvement of the spectral responsivity of photoconductors.

A simple and highly sensitive flexible sensor with extended-gate field-effect transistor for epinephrine detection utilizing InZnSnO sensing films

This study introduces a straightforward method for depositing InZnSnO films onto flexible polyimide substrates at room temperature, enabling their application in electrochemical pH sensing and the detection of epinephrine. A comprehensive analysis of these sensing films, spanning structural, morphological, compositional, and profiling characteristics, was conducted using diverse techniques, including X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, and secondary ion mass spectroscopy. The investigation into the influence of oxygen flow rates on the performance of InZnSnO sensitive films revealed a significant correlation between their structural properties and sensing capabilities. Notably, exposure to an oxygen flow rate of 30/2 (Ar/O2) the ratio of resulted in the InZnSnO sensitive film demonstrating outstanding pH sensitivity at 59.58 mV/pH within a broad pH range of 2–12, surpassing the performance observed with other oxygen flow rates. Moreover, under this specific condition, the film exhibited excellent stability, with a minimal drift rate of 0.14 mV/h at pH 7 and a low hysteresis voltage of 1.8 mV during a pH cycle of 7 → 4→7 → 10→7. Given the critical role of epinephrine in mammalian central nervous and hormone systems, monitoring its levels is essential for assessing human health. To facilitate the detection of epinephrine, we utilized the carboxyl group of 4-formylphenylboronic acid to enable a reaction with the amino group of the 3-aminopropyltriethoxysilane-coated InZnSnO film. Through optimization, the resulting InZnSnO-based flexible sensor displayed a broad and well-defined linear relationship within the concentration range of 10−7 to 0.1 μM. In practical applications, this sensor proved effective in analyzing epinephrine in human serum, showcasing notable selectivity, stability, and reproducibility. The promising outcomes of this study underscore the potential for future applications, leveraging the advantages of electrochemical sensors, including affordability, rapid response, and user-friendly operation.

Clumped and in situ carbon and oxygen isotopes of calcite as tracers for oxidation of hydrocarbons in deep siliciclastic strata

The oxidation of hydrocarbons, including methane, is part of interrelated hydrogeochemical reactions affecting the carbon budget in Earth’s crust. To investigate these processes in deep siliciclastic strata, we analyzed core samples from Lower Triassic red beds in the Mahu Sag (Junggar Basin, northwest China) by coupling petrological observations with high-resolution in situ secondary ion mass spectroscopy stable carbon and oxygen isotope analyses and clumped isotopes (Δ47) of authigenic calcite. The strata contain variable oil and gas content as well as abundant high-valence Fe and/or Mn oxides. Three sequential generations of cement occur, which are characterized as (1) non-luminescent, early diagenetic calcite (MnO <0.3%, δ13CVPDB [Vienna Peedee belemnite] = −5.6‰ to −4.1‰); (2) bright-orange luminescent late-stage I calcite (0.75%−5.23% MnO, δ13C = −51.4‰ to −25.8‰); and (3) dull-orange late-stage II calcite (4.10%−12.93% MnO, δ13C = −91.4‰ to −30.9‰). Clumped isotopic thermometry reveals that the calcite precipitation temperature increases successively from <40 °C, to 81−107 °C, to finally 107−132 °C, corresponding to three precipitation time periods: before the Late Triassic, from the Early Jurassic to the Early Cretaceous, and from the Early Cretaceous to the present, respectively. δ13C values of −55.7‰ to −25.8‰ indicate that late-stage I calcite is the final product of oxidation of both methane and C2+ hydrocarbons, whereas δ13C values as low as −91‰ indicate that late-stage II calcite is mainly derived from the thermochemical oxidation of methane (δ13C = −46.8‰ to −39.3‰) induced by high-valence Mn and/or Fe oxides. For late-stage I calcite, hydrocarbon oxidation was most likely promoted by high temperatures, although microbial oxidation cannot be completely ruled out. The higher precipitation temperature of late-stage II calcite demonstrates that the oxidation of methane requires higher activation energies than oxidation of C2+ hydrocarbons. We provide reliable geochemical evidence for thermally induced sequential oxidation of hydrocarbons within deep siliciclastic strata.

Thick crack-free {113} epitaxial boron-doped diamond layers for power electronics—Deposition with nitrogen addition and high microwave power

In this work, first, we investigate the effect of nitrogen addition in microwave plasma enhanced chemical vapor deposition on the growth of thick {113} epitaxial diamond layers. We identify a narrow range of nitrogen concentrations for the growth of crack-free thick epitaxial layers with a smooth surface morphology. Without nitrogen, cracks start to appear after a layer thickness of 7–10 μm due to elastic energy stored in the epitaxial layer, but the addition of nitrogen stabilizes layer growth. We also investigate the use of low microwave power density growth conditions to produce thick boron-doped epitaxial layers. We observe a very high boron incorporation efficiency using these growth conditions. Finally, we demonstrate the fabrication of a thick (>200 μm) {113} p+ monocrystal plate. The concentration of boron in heavily doped diamond with metallic conductivity has been investigated by the Hall effect measurement technique, Raman spectroscopy, and secondary ion mass spectroscopy. The growth of high quality thick {113} oriented epitaxial layer with high boron concentration (>1020 cm−3) and low resistivity and the fabrication for the freestanding p+ substrates are necessary steps for the fabrication of vertical electronic devices such as high power Schottky diodes.

Electron Donating Functional Polymer Dielectrics to Reduce the Threshold Voltage of n‐Type Organic Thin‐Film Transistors

AbstractLow‐cost and high‐performance electronics based on synthetically simple materials are required to fuel the deployment of smart packaging and wearable electronics. Metal phthalocyanines (MPcs) are promising semiconductors for use in n‐type organic thin film transistors (OTFTs) but often require high operating voltages. The first silicon phthalocyanine‐based OTFT with a polymer dielectric is reported as an alternative to traditional metal oxide dielectrics. Incorporating poly(methyl methacrylate) (PMMA) as the dielectric successfully reduces the threshold voltage (VT) of bispentafluorophenoxy SiPc (F10‐SiPc) from 14.9V to 7.3V while retaining high mobility. Further reduction in VT is obtained by using copolymers and blends of PMMA and dimethylamino ethyl methacrylate (DMAEMA)‐containing polymers, where a higher molar fraction of DMAEMA leads to a consistent drop in VT to ‐0.7 V. The electron‐donating groups of the tertiary amines in the DMAEMA show clear interfacial doping of the semiconductor, reducing the voltage required to populate the dielectric/semiconductor interface with charge carriers and turn on the device. Blending trace amounts of DMAEMA‐containing copolymers with PMMA proves to be an effective strategy for reducing the VT while keeping the charge mobility high, unlike when using pure copolymers with elevated DMAEMA content. Time of flight secondary ion mass spectroscopy (ToF‐SIMS) and X‐ray photoelectron spectroscopy (XPS) demonstrate that the DMAEMA‐containing copolymer is floating to the surface of the PMMA blend at the dielectric–semiconductor interface, which explains the reduced VT. Synchrotron scanning transmission X‐ray microscopy (STXM) demonstrates that PMMA promotes a more edge‐on orientation of F10‐SiPc films, compared to the more face‐on orientation when deposited on the DMAEMA containing copolymer. This study demonstrates a straightforward process for designing dielectric polymers and their blends for the reduction in VT for n‐type OTFTs.

New precise age constraints of the Hatu gold belt, west Junggar, NW China: Implications for a 300 Ma magmatic hydrothermal event in post-collisional setting

A 300 Ma magmatic hydrothermal ore-forming process is identified in the Hatu gold belt in west Junggar, northwest China, based on precise age constraint by secondary ion mass spectroscopy U-Pb dating of hydrothermal zircon and Ar-Ar dating of muscovite. The gold deposits in the Hatu belt (Hatu, Qi-V, Huilvshan, etc.) are similar in geology, with NE- and NW-trending orebodies composed of gold-bearing quartz veins and auriferous altered tuffaceous wall-rocks. Hydrothermal zircon grains separated from gold-bearing quartz veins in the Qi-V gold deposit provide a concordia age of 299.6 Ma and a nearly identical weighted mean 206Pb/238U age of 300 ± 2 Ma. Muscovite samples also from the gold-bearing quartz veins yield 40Ar/39Ar plateau ages of 299.6 ± 1.7 Ma, 299.9 ± 1.8 Ma, and 300.6 ± 1.9 Ma. By comprehensive compilation of geological and geochemical characteristics, tectonic evolution, and geochronology of the gold deposits in the Hatu gold belt, our new precise age data confirm that the gold deposits in the Hatu belt formed simultaneously at ca. 300 Ma, and likely formed during a post-collisional extensional setting by magmatic hydrothermal fluid from cooling magmatic sources.

One-step sputtering of MoSSe metastable phase as thin film and predicted thermodynamic stability by computational methods

We present the fabrication of a MoS2−xSex thin film from a co-sputtering process using MoS2 and MoSe2 commercial targets with 99.9% purity. The sputtering of the MoS2 and MoSe2 was carried out using a straight and low-cost magnetron radio frequency sputtering recipe to achieve a MoS2−xSex phase with x = 1 and sharp interface formation as confirmed by Raman spectroscopy, time-of-flight secondary ion mass spectroscopy, and cross-sectional scanning electron microscopy. The sulfur and selenium atoms prefer to distribute randomly at the octahedral geometry of molybdenum inside the MoS2−xSex thin film, indicated by a blue shift in the A1g and E1g vibrational modes at 355 cm−1 and 255 cm−1, respectively. This work is complemented by computing the thermodynamic stability of a MoS2−xSex phase whereby density functional theory up to a maximum selenium concentration of 33.33 at.% in both a Janus-like and random distribution. Although the Janus-like and the random structures are in the same metastable state, the Janus-like structure is hindered by an energy barrier below selenium concentrations of 8 at.%. This research highlights the potential of transition metal dichalcogenides in mixed phases and the need for further exploration employing low-energy, large-scale methods to improve the materials’ fabrication and target latent applications of such structures.

Selective adsorption of soluble starch on the cassiterite surface for effective flotation separation of scheelite from cassiterite

Tungsten and tin are important strategic resources. Scheelite and cassiterite have similar physical and chemical properties and face the challenge of flotation separation. This study proposes soluble starch (SS) as an effective depressant for the flotation separation of scheelite from cassiterite. The depression mechanism of SS was investigated using micro-flotation, zeta potential, total organic carbon, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, and time-of-flight secondary ion mass spectroscopy. SS exhibited a good selective depressive effect on cassiterite and was able to efficiently separate scheelite from cassiterite. The results of artificial mixed mineral test showed that the recovery of scheelite and cassiterite were 79.35 % and 9.48 %, respectively and the grade were 70.15 % and 8.11 %, respectively at pH 10. The macromolecular organic depressant SS has abundant hydrophilic groups, such as hydroxyl groups, which cause the material to stably adsorb on Sn active sites on the surface of cassiterite and hinder the adsorption of the collector sodium oleate (NaOL, C17H33CO2Na). The selective adsorption of SS on the surface of cassiterite results in efficient flotation separation of the two minerals.

On the way to increase osseointegration potential: Sequential SI-ATRP as promising tool for PEEK-based implant nano-engineering

In the search of the ideal bone implant material, surface initiated atom transfer radical polymerization (SI-ATRP) techniques were successfully employed to modify the polyetheretherketone (PEEK) surface with complex architecture nanolayers featuring hydrophilic poly(2-(dimethylamino)ethyl methacrylate) (PDMAEMA) or poly(2-hydroxyethyl methacrylate) (PHEMA) branches. As a result, polymer layers with height up to over 300 nm were synthesized to decrease the water contact angle from 92.8° to 23.0°. In-depth analysis of layer topography, structure and elemental composition realized with atomic force microscopy (AFM), attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR), time-of-flight secondary ions mass spectroscopy (TOF-SIMS) and X-ray photon spectroscopy (XPS) confirmed successful surface modification. Additionally, to demonstrate the applicability of proposed PEEK functionalization, the biomineralization assay in simulated body fluid (SBF) solution was conducted. The high density of hydroxyl and amine groups in branched polymer brushes structure enhanced the rate of hydroxyapatites (HAp) formation substantially. Compared to untreated PEEK, modification with polymer brushes resulted in the creation of cauliflower-like structures with high specific surface area and Ca/P ratio equal to 1.83–1.87 for PEEK grafted with brushes composed of PHEMA backbone segment and PDMAEMA or PHEMA as block polymer branches (PEEK-g-PHEMA-g-PDMAEMA or PEEK-g-PHEMA-g-PHEMA) after 2 weeks. Finally, the process of the hydroxyapatite formation and increase of the layer thickness in a range of 14 days to 6 weeks of immersion in SBF was thoroughly visualized by scanning electron microscopy (SEM).

Multi-microscopy characterization of threading dislocations in CVD-grown diamond films

We present site-coincident imaging of a high dislocation density boron-doped chemical vapor deposition-grown homoepitaxial (001) diamond film using electron channeling contrast imaging (ECCI), cathodoluminescence, transmission electron microscopy (TEM), and scanning secondary ion mass spectroscopy (SIMS). With growing interest in large area heteroepitaxial substrates, we show that ECCI is a promising technique to accurately evaluate dislocations in diamond films. We find the electron backscatter yield is sufficient to distinguish individual threading dislocations in ECCI despite the low atomic number of carbon, and we have generally good agreement between dislocations observed in ECCI and TEM of the same region. Importantly, relying on luminescence in the 430 nm dislocation-related A-band alone results in an underestimation of the defect density as we find only 20%–40% of the threading dislocations luminesce. We further show that dislocations do not perturb the spatial uniformity of boron doping measured by SIMS, even when the dislocations are clustered with high density, and we can tentatively rule out strong segregation effects at the dislocations. Our results establish the complementary use of microscopy and microanalysis methods to rapidly characterize and understand the impact of dislocations in diamond thin films.

Layered manganese oxide cathode boosting high-capacity and long-term cyclability in aqueous Zinc-Ion batteries

Development of aqueous zinc-ion batteries (ZIBs) promises low-cost and safe energy storage systems. From the existing natural resources manganese-based compounds are desirable cathodes materials for aqueous ZIBs. We present a layered birnessite-type δ–K0.32MnO2·0·15H2O (MnO2) as a candidate cathode material. By adding reduced graphene oxide (rGO) to enhance electron transport, we present the electrode performance in Al pouch cells (3.2 × 3.4 cm2) achieving a high-capacity of 373 mAh g1− at 0.1C which retained over 99 % for 120 cycles. Additionally, performance is highlighted at 5C and 10C, retaining 89 % for 500 cycles and 35 % for 2,000 cycles, respectively. The main redox process involves the Mn4+/Mn3+ redox couple, accompanied by a conversion reaction through the de/protonation process. Operando XRD, operando pH measurement, and time-of-flight secondary-ion mass spectroscopy prove that the de/protonation process of solvated zinc ions [Zn(H2O)6]2+, followed by protonation of the active material leads to the formation of KxMnOOH(1- x) during discharge and vice versa during charging. The conversion reaction resulting from the de/protonation processes leads to the amorphization of the active material after the prolonged cycles. Operando pH analysis shows the influence of the pH on de/protonation of [Zn(H2O)6]2+ complex, thus implicating it as a determinant of the capacity.

Characterization of granular micronutrient premixes for food fortification

AbstractGranular micronutrient premixes have been used to fortify salt and proven to alleviate micronutrient deficiencies. Expansion of the micronutrient premix technology to other food vehicles requires characterization of the granules to establish a basic understanding of the material. The objective of this study is to determine the physical and chemical properties of micronutrient premixes, and examine these parameters in relation to the attrition of the granules. The physical properties examined were particle shape, density, and compressive strength; and chemical compositions of the granule surfaces and cross sections were mapped using x‐ray photoelectron spectroscopy, scanning electron microscopy, and time‐of‐flight secondary ion mass spectroscopy. Currently, premix granules coated with hydroxypropyl methylcellulose and fully hydrogenated soybean oil to a minimum coating thickness of 25 μm is sufficient for resisting attrition under the processing conditions of double‐fortified salt. Micronutrient premix granules can be made more resistant to attrition under harsher processing conditions through reduction in particle size, increase in sphericity, and increase in the coating thickness.Practical ApplicationsTwo billion people worldwide suffer from the deficiency at least one micronutrient, which burdens an individual's health and quality of life. Fortification of staple foods is a proven cost‐effective approach to mitigate micronutrient deficiencies. Micronutrient premix granules used to fortify salt have had great success in reducing iron‐deficient anemia. Premix granules must remain intact until they reach the consumer for the micronutrients to be absorbed by the body. Currently, existing formulations of premix can resist breakage under the processing and handling conditions of salt production. However, premix granules have not been tested under elevated temperatures and compression, so their integrity under such conditions remains to be shown. This study reports on the properties of micronutrient premix granules to establish a baseline understanding for the expansion of their use. Our results show that existing premix granules can be made smaller, rounder, and with a thicker coating to withstand harsher processing conditions.

Structural and optical characterization of dilute Bi-doped GaN nanostructures grown by molecular beam epitaxy

We have carried out detailed studies on the epitaxy and characterization of dilute Bi-doped GaN nanostructures. A comprehensive investigation of Bi-doped GaN nanowires and quasi-film epitaxial growth conditions has been performed. Scanning electron microscopy studies show that lowering the GaBiN growth temperature causes gradual changes in top c-plane nanowire morphology due to the incremental incorporation of foreign Bi atoms. This trend is further substantiated by the secondary ion mass spectroscopy analysis of a multi-layer Bi-doped GaN quasi-film. However, it is also found that the amount of Bi incorporation into the GaN lattice is relatively independent of the N2 flow rate variation under the growth conditions investigated. Furthermore, room-temperature micro-Raman spectra show that there are additional peaks near 530, 650, and 729 cm−1 wave numbers in the Bi-doped GaN samples, which can primarily be attributed to Bi local vibrational modes, indicative of a small amount of Bi incorporation in the GaN lattice. Moreover, phonon calculations with density functional theory indicate that Bi replacing the N sites is the likely origin of the experimentally measured Raman modes. X-ray photoelectron spectroscopy measurements have also been obtained to deduce the electronic interaction between the Bi dopant atom and the GaN nanostructure. Such one-dimensional nanowires permit the synthesis of dislocation-free highly mismatched alloys due to strain relaxation, allowing efficient light absorption and charge carrier extraction that is relevant for solar energy harvesting and artificial photosynthesis.