Ridge Waveguide Research Articles

Silicon-based waveguide technology for millimeter-wave antennas

This paper describes a method for the preparation of complex structured waveguides that can be used for millimeter-wave antennas based on a bulk silicon MEMS process. In this paper, a millimeter-wave band array of ridge waveguide slit antennas with multilayer step-matched feeds is realized by this method. A bulk silicon MEMS process is used to realize the complex structure and the high precision and flatness requirements on the millimeter scale, which cannot be achieved by machining. And the step height difference of more than 100um is realized by combining multiple lithography and silicon oxide mask. The step difference is larger than that achievable by dry etching using the etching selection ratio of silicon oxide and silicon. The waveguide fabricated by this method can work well in the millimeter wave band and is used for antenna feeding, power distribution, etc. It is characterized by compact structure, high precision, and high performance.

Broadband heterodyne electro-optic sampling using a lithium niobate ridge-waveguide

Abstract We demonstrated the bandwidth broadening of terahertz waves detected by heterodyne electro-optical sampling by implementing a ridge waveguide structure in a lithium niobate (LiNbO3) crystal. Such an approach effectively reduces absorption loss, eases the phase matching condition and enhances the nonlinear interaction length through the optical confinement effect. As a result, we have more than doubled the bandwidth and improved the signal-to-noise ratio compared with an equivalent approach in a bulk LiNbO3 crystal. Heterodyne electro-optic sampling in a ridged-waveguide structure is only marginally dependent on the probe beam wavelength, suggesting its potential as a versatile method for broadband terahertz detection.

Monolithically integrated multimode interference coupler-based master oscillator power amplifier with dual-wavelength emission around 830 nm

A monolithically integrated dual-wavelength multimode interference coupler-based master oscillator power amplifier is presented. It consists of two shallowly etched, laterally separated ridge waveguide laser cavities as master oscillators with individual distributed Bragg reflector gratings as cavity mirrors. A deeply etched coupling section containing S-bend shaped waveguides and a multimode interference coupler is used to couple the laser emission of the master oscillators into a shallowly etched single waveguide serving as power amplifier. Changing the etch depth for the coupling section enables a compact device layout. In addition, increased radiation angles of modes not coupled into the power amplifier help to suppress beam steering, otherwise indicated by laterally separated far-field intensity distributions. The device provides 0.5 W of dual-wavelength emission around 830 nm in individual and common operation. As designed, both emission wavelengths are separated by 0.5 nm with spectral widths below 20 pm, limited by the spectral resolution of the spectrometer. Both peak wavelengths remain within spectral windows of 50 pm within the available power range. This enables full flexibility selecting operating points for applications such as shifted excitation Raman difference spectroscopy and the generation of THz emission by photomixing. The emission wavelengths can additionally be non-continuously tuned by applying a heater current to resistors implemented next to the distributed Bragg reflector gratings. As an example, selected spectral distances of 0.5 nm, 1.0 nm, 1.5 nm, and 2.0 nm are demonstrated. Near field widths of 5 μm and far field angles of 17° result in beam propagation ratios of 1.4 (1/e2) in all operation modes and enable easy beam shaping or optical single-mode fiber coupling.

Volume detection based on porous silicon waveguide for CO2 mid-infrared spectroscopy

A mid-infrared (mid-IR) porous silicon (PSi) waveguide gas sensor was fabricated. PSi guiding and confinement layers were prepared by electrochemical anodization. Ridge waveguides were patterned using standard i-line photolithography and reactive ion etching. Due to the open pores, light and gas molecules interact in the inside volume, unlike bulk material in which the interaction takes place with the evanescent part of the light. Propagation losses are measured for a wavelength range spanning from λ = 3.9 to 4.55 µm with a value of 11.4 dB/cm at λ = 4.28 µm. The influence of native oxidation and ageing on the propagation losses was investigated. Limit of detection (LoD) of 1000 ppm is obtained with the waveguide sensor at the carbon dioxide (CO2) absorption peak at λ = 4.28 µm.

Miniaturizing a coherent beam combining system into a compact laser diode module.

We present a laser module with dimensions of 76×43×15m m 3 that for the first time to our knowledge realizes a coherent beam combination in such a compact device, using two tapered amplifiers seeded by a distributed Bragg reflector ridge waveguide laser diode operating at 761nm in a single longitudinal mode. The generated combined optical power is up to 5W continuous wave with a combing efficiency of 85%. The phase of the system is controlled by the current in the ridge waveguide section of one of the tapered amplifiers. The phase-stabilization process is automated using a reverse hill-climbing algorithm and an ATmega328P microcontroller.

Relative Intensity Noise in a Two‐Section Distributed Bragg Reflector Tapered Laser

The relative intensity noise (RIN) in a two‐section distributed Bragg reflector (DBR) tapered laser emitting around 1060 nm is being studied experimentally. By analyzing the RIN spectra, a resonance frequency and damping is obtained. Herein, the dependence of the resonance frequency and the maximum RIN at the resonance frequency is studied as functions of the ridge waveguide (RW) and tapered section currents independently. The low frequency RIN is approximately −162 dB Hz−1, and the RIN peak at currents providing high output power is as low as −154 dB Hz−1. The observed nonlinearity of the squared resonance frequency with the RW section current is attributed to carrier saturation. The measured high values of the resonance frequency, exceeding 2.5 GHz for RW currents higher than 100 mA at a tapered current of 3 A, indicate gain lever enhancement.

Heterogeneous integration of an on-chip Nd:YAG whispering gallery mode laser with a lithium-niobate-on-insulator platform.

The integration of heterogeneous optical components onto an optical platform is crucial for the advancement of photonic chips. To achieve this, efficient coupling of optical signals between components and the platform is essential. Here, we have successfully integrated a Nd:YAG microdisk laser with a lithium-niobate-on-insulator (LNOI) photonic platform by modulating the propagation modes of LNOI. Ridge waveguides are fabricated on the LNOI by carefully adjusting the cross-sectional dimensions to enable the propagation of higher-order propagation modes. This ridge waveguide ensures that the effective refractive index of the higher-order mode closely matches that of the fundamental mode of the Nd:YAG microdisk, ensuring efficient waveguide-microdisk coupling. This on-chip laser, consisting of an Nd:YAG microdisk and LNOI integration, achieves a maximum output power of 23 µW, and a mode suppression ratio of 53.6 dB. This research presents an efficient approach for constructing highly functional heterogeneous integrated optical chips.

High-performance PCW-DFB laser diodes using offset quantum well epitaxial structures.

We demonstrated a high-performance partially corrugated waveguide distributed feedback (PCW-DFB) laser with high output power, low relative intensity noise (RIN) and narrow linewidth. By introducing offset quantum-well structure that provides enough threshold gain difference for single transverse mode operation, the laser can achieve single mode behavior with an 8-µm-wide ridge waveguide. The laser has been designed by the simulation model based on the coupled wave equations, and the fabricated PCW-DFB laser with the cavity length of 1.3 mm exhibited an output power higher than 190 mW. Stable single mode characteristics have been achieved with a side-mode suppression-ratio (SMSR) over 55 dB. The RIN was less than -160.5 dB/Hz at an injection current of 470 mA, and the linewidth reached 45 kHz.

Mechanical dicing of optical quality facets and waveguides in a silicon nitride platform

AbstractThe authors report a ductile dicing process for manufacturing optical‐quality facets in a multi‐layered silicon nitride platform without the need for polishing. A surface roughness (Sa) of 1.5 nm was achieved. This technique was extended to fabricate ridge waveguides, and the results and characterization are reported.

High-power ultra-wideband power-combining technique based on microstrip line and ridge waveguide

ABSTRACT Based on microstrip-line power divider and ridge-waveguide power combiner, a high-power ultra-wideband solid-state power-combining amplifier is designed and fabricated. The Measured results show that the continuous wave output power of the ultra-wideband solid-state power-combining amplifier reaches over 100 W within the frequency range of 6–18 GHz, the maximum output power is nearly 200 W, the power-combining efficiency is approximately 80%, and the power-added efficiency is better than 14%.

Quantification of losses in bent waveguides within DBR-RW laser diodes emitting at 785 nm

An experimental study of straight and bent distributed Bragg reflector (DBR) ridge waveguide (RW) lasers and Fabry–Pérot (FP) RW lasers emitting at 785 nm is presented. To determine the losses introduced by the bent waveguides within DBR-RW lasers, different laser designs were manufactured and characterized. The bent waveguides investigated here within DBR-RW laser diodes are sine-shaped S-bends. S-bends with three different lateral offsets are manufactured. The experimental characterization of FP lasers and the straight DBR-RW lasers with different coatings at the rear facet enables a rough estimation of the losses caused by the DBR grating and the determination of the DBR reflectivity. Furthermore, additional losses in the bent DBR-RW lasers caused by the S-bend (i.e. radiation and scattering losses) are quantified by comparing them to the straight DBR-RW lasers. Within the active resonator, the S-bend losses amount to α Bend = 0.6 cm−1 (α Bend = 0.5 dB) for the smallest manufactured lateral S-bend offset H = 40 μm. For both straight and bent DBR-RW lasers spectrally narrow single-mode emission is obtained. A lateral beam width of 3.8 μm (using second moments) and a lateral far-field angle of about 18° and 19.5° (using second moments) for the straight and S-bend DBR-RW are measured, respectively. This gives a lateral beam propagation ratio of 1.2 and 1.3 (using second moments) for straight and S-bend DBR-RW, respectively. The radiation loss in dependency of the lateral S-bend offset is simulated and compared to experimentally estimated S-bend losses for bent DBR-RW lasers (H = 40 μm, H = 60 μm and H = 70 μm).

Small Footprint and High Extinction Ratio Cladding-Modulated Bragg Grating Structure as a Wideband Bandstop Filter

This study presents a comprehensive numerical investigation of silicon Bragg grating (BG) waveguide structures with cladding modulation. The device design features a uniform silicon ridge waveguide with corrugated cladding on both sides. Two distinct architectures are explored: one where silicon serves as the cladding and another where gold (Au) is employed. Our detailed analysis uncovers compelling results for both configurations. The silicon corrugated cladding BG waveguide demonstrates a bandstop bandwidth of ~50 nm, accompanied by an extinction ratio (ER) of 7.98 dB. The device footprint is compact, measuring approximately 16.4 × 3 µm2. In contrast, the Au corrugated cladding BG waveguide exhibits exceptional performance, boasting a wideband bandstop bandwidth of ~143 nm and an impressive ER of 19.96 dB. Despite this enhanced functionality, the device maintains a reasonably small footprint at around 16.9 × 3 µm2. This investigation underscores the potential of Au corrugated cladding BG waveguides as ideal candidates for achieving high-spectral-characteristic bandstop filters. The significant improvement in bandstop bandwidth and ER makes them promising for advanced optical filtering applications.

Spontaneous Emission Studies for Blue and Green InGaN-Based Light-Emitting Diodes and Laser Diodes

We investigated the efficiency droop phenomenon in blue and green GaN-based light-emitting diodes (LEDs) and laser diodes (LDs), which poses a significant challenge in high-power LEDs and is characterized by a reduction in external quantum efficiency at higher injection currents. Utilizing identical epi-structures for blue and green LEDs and LDs, with variations only in indium composition, our experiments revealed a gradual blue shift in the emission wavelengths as the injection current increased. Notably, the blue LED demonstrated a smaller shift compared to the green LED. In addition, the full width at half maximum of emission spectra increased with increasing injection current density, indicative of efficiency droop. Significantly, LDs consistently exhibited lower junction temperatures despite operating at higher current densities. This is attributed to the enhanced heat dissipation capability of the ridge waveguide LD structure, which results in a narrower emission spectrum and reduced efficiency droop compared to mesa LED structures. These outcomes highlight the efficiency of the ridge waveguide LD structure in heat dissipation from the active layer, offering crucial insights for the advancement of high-power light-emitting devices.

Praseodymium-Doped Ge20In5Sb10Se65 Films Based on Argon Plasma Cosputtering for Infrared-Luminescent Integrated Photonic Circuits.

In this paper, we report on the infrared luminescence of amorphous praseodymium-doped Ge20In5Sb10Se65 waveguides, which can be used as infrared sources in photonic integrated circuits on silicon substrates. Amorphous chalcogenide thin films were deposited by radiofrequency magnetron cosputtering using an argon plasma whose deposition parameters were optimized for chalcogenide materials. The micropatterning as ridge waveguides of the chalcogenide cosputtered films was performed using photolithography and plasma-coupled reactive ion etching techniques. The influence of the rare earth concentration within those thin films on their optical properties and rare earth spectroscopic properties was investigated. Using an excitation wavelength of 1.55 μm, the mid-infrared luminescence of Pr3+ ions from 2.5 to 5.5 μm was clearly demonstrated for studied chalcogenide materials. A wide range of waveguide widths and doping ratios were tested, assessing the ability of the cosputtering technique to preserve the luminescence properties of the rare earth ions initially observed in the bulk glass through the thin-film deposition and patterning process.

Ultra-small mode area V-groove waveguide design for on-chip single-photon emission.

We numerically investigate the figures of merit for single-photon emission in a planar GaAs-on-insulator waveguide featuring a V-groove geometry. Thanks to a field enhancement effect arising due to boundary conditions of this waveguide, the structure features an ultra-small mode area enabling a factor of a maximum 2.8 times enhancement of the Purcell factor for quantum dot and a more significant 7 times enhancement for the atomic-size solid-state emitters with the aligned dipole orientation. In addition, the coupling efficiency to the fundamental quasi-TE mode is also improved. To take into account potential on-chip integration, we further show that the V-groove mode profile can be converted using a tapering section to the mode profile of a standard ridge waveguide while maintaining both the high Purcell factor and the good fundamental mode coupling efficiency.

Periodically-Poled Lithium Tantalate Ridge Waveguides for Efficient Nonlinear Frequency Conversion in the Near UV

Optical damage resistant ridge waveguides for blue and near UV wavelengths have been fabricated using high-temperature Zr and Zn diffusion doping and vapor transport equilibration (VTE) of congruent LiTaO3 crystals. For both dopants high optical damage thresholds >10 MW/cm2 for 532 nm light were demonstrated at room temperature, which can be increased by a factor ~3 when heating the samples to ~150°C. Ridge waveguides with low optical losses of ~0.4 dB/cm were fabricated using diamond-blade dicing. First-order periodic poling with grating periods of ~3 μm can be used for efficient nonlinear frequency conversion for both SHG (800 nm pump) or SPDC (400 nm pump) processes.

Analysis and simulation of X-band high-power microwave generation based on T-shaped four-period slow-wave structure

In this study, a T-shaped, four-period resonant slow-wave structure is optimally designed, and its high-frequency performance is comprehensively analyzed in theory. By using the image theory, the T-shaped waveguide unit is transformed into an equivalent ridge waveguide configuration. The high-frequency characteristics of the equivalent ridge waveguide, such as resonant frequency and structure of the T-shaped waveguide are analyzed by using equivalent circuit theory. The analysis has confirmed that in the ridge waveguide, starting from the second-highest order mode, the frequency points of the even-order modes are very consistent with those of the T-shaped waveguide; however, the odd-order modes have no such corresponding mode in the T-shaped waveguide, for they do not fulfill the electric boundary conditions required by the image method. On this basis, a T-shaped four-period resonant slow-wave structure is constructed, and its dispersion characteristics are analyzed to determine the resonant modes and frequencies, as well as the range of mode synchronization voltages. Simulations are subsequently performed to validate the effectiveness of the relativistic extended interaction radiation source, which includes the novel T-shaped periodic resonant slow-wave structure. Advanced three-dimensional particle simulations, in conjunction with optimization techniques show that a high-power microwave output at a frequency of 9.8 GHz, is achieved, which can delivers an average power of 71.4 MW. This output is attained under the conditions of a 448 kV beam voltage, 400 A beam current, and a 0.4 T uniform axial magnetic field, with an electron efficiency reaching 39.8%. This structure, characterized by the T-shaped waveguide, is demonstrated to be capable of producing high-efficiency, high-power microwaves with fewer periods, presenting a compact and efficient solution for generating high-power microwaves in advanced scientific applications.

Experimental Demonstration of Frozen-Mode Enabled Slow-Wave Photonic Device in Coupled Silicon Ridge Waveguides

Experimental Demonstration of Frozen-Mode Enabled Slow-Wave Photonic Device in Coupled Silicon Ridge Waveguides

A Low RCS Waveguide Slot Antenna array with Metamaterial Absorber

We propose a novel design to reduce the radar cross section (RCS) of ridged waveguide slot antenna array with metamaterial absorber (MMA). The MMA consists of metallic pattern and solid metal on sides of a dielectric slab, of which the absorbing characteristics and mechanism are analyzed. The PEC ground plane of a ridged waveguide slot antenna array is covered by MMA. Both the simulated and measured results show that compared with the waveguide slot antenna array with a PEC ground plane, the RCS of proposed antenna array are reduced dramatically without degradation of antenna performance. Combining with the bandpass frequency selective surfaces technology, the guideline illustrated by the proposed examples will serve as a good candidate for the future design of low RCS antenna.

A Compact and Low Loss Filtering Balun Based on Asymmetrical Ridge Waveguide Resonator

A Compact and Low Loss Filtering Balun Based on Asymmetrical Ridge Waveguide Resonator