Monolithic InAs/InP Quantum Dash Mode-Locked Lasers for Millimeter-Wave-Over-Fiber Mobile Fronthaul Systems

Abstract

Semiconductor monolithic mode-locked lasers (MLLs) are potential solutions for generating high-speed optical pulses in future mobile fronthaul networks in the millimeter-wave (mmW) bands. Our previous studies have investigated using buried heterostructure (BH) quantum dash (QDash) multi-wavelength lasers for photonic mmW applications. Here we present results from monolithic chip-scale ridge waveguide QDash MLLs for generating and transmitting mmW signals. Through optimizing epitaxy growth, waveguide design, and fabrication process, the five-layer ridge waveguide QDash MLL exhibits superior performance with regard to the coherent comb bandwidths, lasing threshold current, output power, and internal quantum efficiency. The generated mmW frequency at 28.36 GHz exhibits excellent frequency stability, with a drift of less than ± 50 kHz. For the first time, we have utilized the free-running five-layer ridge waveguide QDash MLL to implement single- and dual-optical carrier modulation schemes in the millimeter-wave-over-fiber (mmWoF) systems. Both modulation schemes have achieved satisfactory performance achieving error vector magnitude (EVM) performance much lower than the 3GPP requirements (<12.5%) for future networks. In particular, the single-carrier modulation scheme achieves higher conversion efficiency and improved EVM performance. In contrast, the dual-carrier modulation scheme alleviates the path length matching challenges, offering a low-cost and easy-to-implement solution in different usage scenarios.