Reversal Of Electric Field Research Articles

The fabrication and in vitro bioactivity of HA/ZrO2/MgO gradient composite coatings

Hydroxyapatite (HA), chitosan (CS), ZrO2 and MgO suspensions were distributed by zonal electrophoresis (ZE), and then HA/CS/ZrO2/MgO composite coating on the surface of titanium substrate was fabricated by electrophoretic deposition (EPD) in a reverse electric field subsequently. An HA/ZrO2/MgO gradient composite coating (Z1) was fabricated by calcination at 700 °C for 120 min. At the same time, another HA/ZrO2/MgO composite coating (E1) was directly fabricated only by electrophoretic deposition for comparison, where ZrO2 and MgO were osteogenic trace element compounds (OTECs). The morphology, structure, composition, wettability, apatite-forming ability, antibacterial efficacy of the composite coating Z1 were investigated by XRD, FT-IR, FESEM, EDS, contact angle goniometry, Lloyd's universal testing machine, electrochemical workstation, immersing in simulated body fluid, and inhibition experiments. The results showed that the contents of Ca, Zr, and Mg elements had a gradient distribution in direction of coating thickness. With the addition of ZrO2 and MgO, the contact angle of Z1 is significantly reduced from 52.5° to 27.3°. Remarkably, Z1 has more improved properties than E1, mainly manifested in the bonding strength of Z1 and titanium substrate up to 29.3 MPa, exceeding the standard requirements for bonding strength of HA coating implants (15 Mpa, iso13779-2) and as can be observed from cyclic voltammetry (CV) curve and Tafel polarization curve, Z1 exhibit superior electrochemical stability and strong corrosion resistance when immersed in HEPES simulated body fluid (H–SBF). In addition, after immersing in H–SBF for 24 d, the surface of the Z1 was completely covered by carbonated hydroxyapatite (CHA) and the Ca/P of the coating increased from 1.67 to 1.99. Furthermore, the antibacterial effect test of Z1 showed that the antibacterial rates of Z1 against Escherichia coli and Staphylococcus aureus reached to 98.2 % and 86.3 %, respectively.

Enormous electroresistance and field effect studies on LaMnO3–δ / La0.7Ca0.3MnO3 / LaAlO3 manganite – manganite composite structure

Field effect configuration (FEC) coupled field effect studies (FES) is one of the prime requisites for the development of spintronic based logic and memory devices having better sensitivities for external perturbations specifically while scaling down the technology. In this communication, LaMnO3–δ / La0.7Ca0.3MnO3 / LaAlO3 (LMO / LCMO / LAO) manganite – manganite composite structure was successfully fabricated using cost effective chemical solution deposition (CSD) method. FEC coupled FES have been performed across the electrically polarizable LMO layer and LCMO conducting channel. Enormous room temperature colossal electroresistance (CER) has been acquired ∼ 7000 % under 2 MV/cm forward biased control electric field and ∼ 8.5 × 105 % under 0.9 MV/cm reverse biased control electric field. Elegant modifications in the resistive behavior have been understood on the bases of charge carrier density alterations, interface modifications, phase separation, Mott–type phase transformation and formation–break down of depletion region across the manganite – manganite composite structure.

Coupling flow and electric fields to simulate migration and remediation of uranium in groundwater remediated by electroosmosis and a permeable reactive bio-barrier

Combined remediation technologies are increasingly being considered to uranium contaminated groundwater, such as the joint utilize of permeable reactive bio-barrier (Bio-PRB) and electrokinetic remediation (EKR). While the assessment of uranium plume evolution in the combined remediation system (CRS) have often been impeded by insufficient understanding of multi-physical field superposition. Therefore, advanced knowledge in multi-physical field coupling in groundwater flow will be crucial to the practical application of these techniques. A two-dimensional multi-physical field coupling model was constructed for predicting the uranium degradation in CRS. The study demonstrates that the coupling model is able to predict the uranium plume evolution and rapidly evaluate the performance of CRS components. The results show that field electric direction and flow field strength are the key factors that affect the retardation and remediation performance of CRS. The reverse electric field direction significantly affected the contact reaction time of uranium in the system. The uranium residence time in the reverse electric field was 3.8 d, which was significantly greater than the original electric field (2.0 d). Depending on the voltage, the reverse electric field direction was 16%–36% more efficient than the original direction. The strength of the flow field was about two orders of magnitude higher than that of the electric field, so the groundwater flow rate dominated remediation efficiency. Reducing the flow rate by 1/2 could improve the performance of the system by approximately 66%. In addition, the coupling model can be utilized to design standard CRS for real site of uranium contaminated groundwater. To meet the optimal performance, the direction of the electric field should be set opposite to the flow field. This work has successfully used a coupling model to predict uranium contaminant-plume evolution in CRS and estimate the performance of each component.

Electrically controllable spin filtering in zigzag phosphorene nanoribbon based normal–antiferromagnet–normal junctions

We investigated the electric controllable spin-filtering effect in a zigzag phosphorene nanoribbon (ZPNR) based normal–antiferromagnet–normal junction. Two ferromagnets are closely coupled to the edges of the nanoribbon and form the edge-to-edge antiferromagnetism. Under an in-plane electric field, the two degenerate edge bands of the edge-to-edge antiferromagnet split into four spin-polarized sub-bands and a 100% spin-polarized current can be easily induced with the maximal conductance 2e 2/h. The spin polarization changes with the strength of the electric field and the exchange field, and changes sign at opposite electric fields. The spin-polarized current switches from one edge to the other by reversing the direction of the electric field. The edge current can also be controlled spatially by changing the electric potential of the scattering region. The manipulation of edge current is useful in spin-transfer-torque magnetic random-access memory and provides a practical way to develop controllable spintronic devices.

Plasma-assisted deposition and characterization of Al2O3 dielectric layers on (001) β -Ga2O3

In this work, we have investigated plasma-assisted deposition of Al2O3 on HVPE (001) β-Ga2O3 and evaluated the dielectric quality from electrical measurements on fabricated metal-oxide-semiconductor (MOS) capacitors. The interface structure and crystallinity of the films were investigated as a function of the growth temperature. The dielectric/semiconductor interfaces were found to have reverse breakdown electric fields up to 5.3 MV/cm in the β-Ga2O3, with relatively low hysteresis in capacitance–voltage and low leakage current. We determined a negative fixed interface charge density at the interface from analysis of thickness-dependent capacitance voltage data. This study shows the advantage of using plasma-assisted deposition to achieve high breakdown strength Al2O3/β-Ga2O3 MOS structures for device application purposes.

Self-Powered Photodetector with High Efficiency and Polarization Sensitivity Enabled by WSe2/Ta2NiSe5/WSe2 van der Waals Dual Heterojunction.

Self-powered photodetectors have triggered widespread attention because of the requirement of Internet of Things (IoT) application and low power consumption. However, it is challenging to simultaneously implement miniaturization, high quantum efficiency, and multifunctionalization. Here, we report a high-efficiency and polarization-sensitive photodetector enabled by two-dimensional (2D) WSe2/Ta2NiSe5/WSe2 van der Waals (vdW) dual heterojunctions (DHJ) along with a sandwich-like electrode pair. On account of enhanced light collection efficiency and two opposite built-in electric fields at the hetero-interfaces, the DHJ device achieves not only a broadband spectral response of 400-1550 nm but outstanding performance under 635 nm light illumination including an ultrahigh external quantum efficiency (EQE) of 85.5%, a pronounced power conversion efficiency (PCE) of 1.9%, and a fast response speed of 420/640 μs, which is much better than that of the WSe2/Ta2NiSe5 single heterojunction (SHJ). Significantly, based on the strong in-plane anisotropy of 2D Ta2NiSe5 nanosheets, the DHJ device shows competitive polarization sensitivities of 13.9 and 14.8 under 635 and 808 nm light, respectively. Furthermore, an excellent self-powered visible imaging capability based on the DHJ device is demonstrated. These results pave a promising platform for realizing self-powered photodetectors with high performance and multifunctionality.

Discovery of Nanoscale Electric Field‐Induced Phase Transitions in ZrO2

AbstractThe emergence of ferroelectric and antiferroelectric properties in the semiconductor industry's most prominent high‐k dielectrics, HfO2 and ZrO2, is leading to technology developments unanticipated a decade ago. Yet the failure to clearly distinguish ferroelectric from antiferroelectric behavior is impeding progress. Band‐excitation piezoresponse force microscopy and molecular dynamics are used to elucidate the nanoscale electric field‐induced phase transitions present in ZrO2‐based antiferroelectrics. Antiferroelectric ZrO2 is clearly distinguished from a closely resembling pinched La‐doped HfO2 ferroelectric. Crystalline grains in the range of 3 – 20 nm are imaged independently undergoing reversible electric field induced phase transitions. The electrically accessible nanoscale phase transitions discovered in this study open up an unprecedented paradigm for the development of new nanoelectronic devices.

Dynamic Behavior and Residence Characteristics of Space Charge in Oil-Paper Insulation Under Polarity–Reversal Electric Field

As one of the core components of the direct current (dc) transmission system, the converter transformer bears not only the alternate current (ac) electric field but also complex electric fields, such as polarity reversal. In the process of polarity reversal, the phenomenon of space charge residence occurs in the oil-paper insulation inside the converter transformer, which distorts the internal electric field, leading to insulation deterioration or even failure. However, studies on the dynamic characteristics of space charge during the reversal process and the mechanism of insulation degradation are not comprehensive. Therefore, in this study, a test pulse matching circuit was developed to accurately match the test pulse with the polarization voltage of polarity reversal and perform the multi-point rapid test of the space charge transient characteristics during polarity reversal. The space charge tests (of the unaged specimen) were performed at the polarity–reversal time of 60, 30, and 10 s, and the influence of polarity–reversal time on the charge residence characteristics of oil-paper insulation was compared and analyzed. Additionally, space charge tests were performed on oil-paper insulation samples with accelerated electro–thermal–mechanical aging treatment for 0, 2.5, 5, 10, and 15 days to compare and analyze the influence of oil-paper insulation aging degree on charge residence characteristics under the action of multi-physical field coupling. Research results indicate that the shorter the reversal time, the shorter the time required for the charge to dissipate, and the more the charge resides, the stronger its enhancement effect on the electric field. As the aging degree of the sample increases, the dissipation rate of the resident charge becomes slower during the reversal process, and the resident charge increases, so that the maximum electric field intensity inside the sample increases under the same polarization electric field. The study of the charge residence characteristics and the dynamic charge behavior during the polarity inversion process has important guiding significance for clarifying the deterioration mechanism of the converter transformer oil-paper insulation under polarity–reversal electric field.

Enhanced magnetic modulation at a border of magnetic ordering in La1−xSrxMnO3/BaTiO3(100) heterostructure

In La1−xSrxMnO3 (LSMO)/BaTiO3 (BTO) heterostructures with a multiferroic interface, an artificial modulation of the magnetic structure is observed. The saturation magnetization of La1−xSrxMnO3 changes discontinuously due to in-plane distortions caused by a structural phase transition of a BaTiO3 substrate. Polarity reversal of the external electric field also causes a reversible switching in the magnetization. The magnitude of both magnetic modulations, due to the magnetoelastic and electric field effects, is concomitantly enhanced at a critical composition xc∼0.55, locating at a border of the magnetic phase transition. The polarity-dependent change in magnetization is possibly attributed to a change in the concentration of oxygen ions at the LSMO/BTO interface, indicating that the exchange interaction is reciprocally driven from being ferromagnetic to antiferromagnetic by the electric field polarity.

Tunable band alignment engineering in two-dimensional Janus SnSSe/phosphorene van der Waals heterostructures

The band alignment affects the electronic properties and possible applications of van der Waals heterostructures (vdWHs). Here, we theoretically build two-dimensional (2D) Janus SnSSe/phosphorene vdWHs and explore the influences of external factors on the electronic properties of the vdWHs. The results identify that different interface patterns can lead to type III and type II vdWHs. Within a certain range, the weakened interlayer coupling or in-plane tensile strain can induce Se-interface vdWHs to change from intrinsic type II to type III, while S-interface vdWHs are robust. In addition, the positive electric field can adjust the vdWHs to exhibit type II, type III or type I characteristics, while the reverse electric field can only expand the tunneling window of type III vdWHs. This work suggests that interface-modified Janus SnSSe/phosphorene vdWHs possess potential applications in optoelectronic and tunneling FETs.

Statistical Study of the Ionospheric Slab Thickness at Beijing Midlatitude Station

The ratio of the total electron content (TEC) to the F2-layer peak electron density (NmF2) is known as the ionospheric equivalent slab thickness (EST, also known as τ), and it is a crucial indicator of the ionosphere. Using TEC and NmF2 data from the years 2010 to 2017, this work conducts a comprehensive statistical analysis of the ionospheric slab thickness in Beijing, which is in the midlatitude of East Asia. The outcomes show that the τ have different diurnal variations at different seasons for high/low-solar-activity years. On the whole, daytime τ significantly greater than nighttime τ in summer, and it is the opposite for the τ in winter regardless of the solar cycle, whereas the τ during equinox shows different morphology for high/low-solar-activity years. Specifically, daytime τ is larger than nighttime τ during equinox in years of high-solar activity, while the opposite situation applies for the τ during equinox in years of low-solar activity. Moreover, the pre-sunrise and post-sunset peaks are most pronounced during winter for low-solar-activity years. In summer, there is a great increase in τ during the morning hours when compared with other seasons. Furthermore, the τ decreases with the solar activity during nighttime, whereas it seems there is no correlation between daytime τ and solar activity. This paper explained the primary diurnal variations in τ across different seasons during high-/low-solar-activity years by analyzing relative fluctuations of TEC and NmF2 throughout the corresponding period. In addition, based on the disturbance index (DI), which is calculated by instantaneous τ and its corresponding median, this paper found that the storm-time τ might increase when compared with its median value during the daytime, while it may both increase and decrease during the nighttime, especially around dawn and dusk hours. To further analyze the physical mechanism, an example on 2 October 2013 is also presented. The results indicate that the positive disturbance of τ during the main phase of a geomagnetic storm might be caused by the prompt penetration electric field and neutral wind during the storm, and the τ increases during the early recovery phase might be due to the disturbance dynamo electric field as well as the neutral wind during the storm. Moreover, there is a negative disturbance of τ in the recovery phase during the most disturbed sunrise hours, and it might be due to the electric field reversal, neutral wind or other factors during this period. This paper notes the differences of τ in midlatitude between different longitudinal sectors from the related climatology and storm-time behavior, as it would be helpful to improve the current understanding of τ at midlatitudes in East Asia.

Periodical polarization reversal modulation in multiferroic MnWO4 under high magnetic fields

We report polarization reversal periodically controlled by the electric field in multiferroic MnWO4 with a pulsed field up to 52 T. The electric polarization cannot be reversed by successive opposite electric fields in low magnetic fields (< 14 T) at 4.2 K, whereas polarization reversal is directly achieved by two opposite electric fields under high magnetic fields (< 45 T). Interestingly, the polarization curve of rising and falling fields for H ∥ u (magnetic easy axis) is irreversible when the magnetic field is close to 52 T. In this case, the rising and falling polarization curves can be individually reversed by the electric field, and thus require five cycles to recover to the initial condition by the order of the applied electric fields (+E, −E, −E, +E, +E). In addition, we find that ferroelectric phase IV can be tuned from parallel to antiparallel in relation to ferroelectric phase AF2 by applying a magnetic field approximated to the c axis.

Correlation Between Reverse Leakage Current and Electric Field Spreading in GaN Vertical SBD With High-Energy Ion Implanted Guard Rings

This work focuses on the bias-dependent reverse leakage current and carrier depletion process of vertical gallium nitride (GaN)-on-GaN Schottky barrier diodes (SBDs) with fluorine ion-implanted guard rings (GRs). The reverse leakage characteristics in the vertical GaN SBD with GRs sequentially go through ohmic conduction, thermionic field emission (TFE), and space charge limited conduction (SCLC) model as the reverse bias increases gradually. Once the traps in the implanted termination region are fully ionized, the device will undergo large leakage current at high biases. Compared with infinite area ion implanted edge termination (ET), ion-implanted GR can effectively reduce the leakage current at low biases. In addition, there are kinks in the reverse current–voltage curves, which proved to be related to the electric field spreading effect of individual GR. Based on the analysis of reverse leakage current, the electric field modulation mechanism of ion-implanted GRs is reviewed.

Electron dynamics in planar radio frequency magnetron plasmas: III. Comparison of experimental investigations of power absorption dynamics to simulation results

In magnetized capacitively coupled radio-frequency (RF) discharges operated at low pressure the influence of the magnetic flux density on discharge properties has been studied recently both by experimental investigations and in simulations. It was found that the magnetic asymmetry effect allows for a control of the DC self-bias and the ion energy distribution by tuning the magnetic field strength. In this study, we focus on experimental investigations of the electron power absorption dynamics in the presence of a magnetron-like magnetic field configuration in a low pressure capacitive RF discharge operated in argon. Phase resolved optical emission spectroscopy measurements provide insights into the electron dynamics on a nanosecond-timescale. The magnetic flux density and the neutral gas pressure are found to strongly alter these dynamics. For specific conditions energetic electrons are efficiently trapped by the magnetic field in a region close to the powered electrode, serving as the target surface. Depending on the magnetic field strength an electric field reversal is observed that leads to a further acceleration of electrons during the sheath collapse. These findings are supported by two-dimensional particle in cell simulations that yield deeper insights into the discharge dynamics.

Charge transport dynamics of a C6H4NH2CuBr2I/TiO2 heterojunction in aqueous solution under reverse bias.

The photocurrent output of the C6H4NH2CuBr2I/TiO2 heterojunction photoelectrode in an aqueous solution is super stable even after 30 000 s. However, the photocurrent is extremely weak. Intensity-modulated photocurrent spectroscopy revealed that the electron transfer in the C6H4NH2CuBr2I/TiO2 photoelectrode without bias is not sufficiently fast to compete with the charge recombination process due to the short diffusion length (∼23 nm), resulting in a low photocurrent. The charge separation and charge transfer efficiency in the bulk of C6H4NH2CuBr2I could be significantly improved under a small reverse electric field (Er), resulting in an enhanced photocurrent.

Electrical contact characteristics and regulatory effects of GaN/VSe&lt;sub&gt;2&lt;/sub&gt; van der Waals heterojunction

Reducing the Schottky barrier at the metal-semiconductor interface and achieving Ohmic contacts are very important for developing high-performance Schottky field-effect devices. Based on the fact that GaN and 1T-VSe&lt;sub&gt;2&lt;/sub&gt; monolayers have been successfully prepared experimentally, we theoretically construct a GaN/1T-VSe&lt;sub&gt;2&lt;/sub&gt; heterojunction model and investigate its stability, Schottky barrier property and its modulation effects by using first-principle method. The calculated formation energy and the molecular dynamics simulations show that the constructed heterojunction is very stable, meaning that it can be realized experimentally. The intrinsic heterojunction holds a p-type Schottky contact and always keeps the same p-type Schottky contact when tensile or compressive strain is applied. But when the external electric field is applied, the situation is different. For example, a higher forward electric field can cause the heterojunction to change from a Schottky contact into an Ohmic contact, and a higher reverse electric field can lead to a variation from a p-type Schottky contact to an n-type Schottky contact. In particular, by implementing chemical doping, the transition from Schottky contact to Ohmic contact can be achieved more easily for the heterojunction. For example, the introduction of B atom enables the GaN/1T-VSe&lt;sub&gt;2&lt;/sub&gt; heterojunction to realize a typical Ohmic contact, while for C and F atom doping, the GaN/1T-VSe&lt;sub&gt;2&lt;/sub&gt; heterojunction can achieve a quasi-Ohmic contact. These studies provide a theoretical reference for the practical application of the suggested heterojunction, and are of very important in designing novel high-performance nano-scale electronic devices.

Simulation of effect of thermionic emission on magnetized sheath near target plate of tungsten divertor

The high confinement mode (H-mode) is a preferred operation mode of tokamak devices in the future, but the burst of edge localized mode (ELM) will sharply increase the heat load deposited on the divertor target, raising the target temperature rapidly and strengthening surface thermionic emission. In this paper, a one-dimensional fluid model is used to simulate the influence of thermionic emission on the characteristics of the magnetized sheath. The results show that the amplitude of float potential and the electric field strength both decrease under the action of thermionic emission. Plenty of thermionic emission electrons leave the target, resulting in a region with negative charge density near the target plate, and the magnetized sheath is divided into two parts: ion sheath and electron sheath. In the electron sheath, with the rise of the target surface temperature, electrons accumulated in front of the target also increase, the potential distribution is non-monotonic, and a “virtual cathode” structure appears. The reverse electric field formed near the target will confine the thermionic emission electrons leaving the target and slow down the ion movement, leading to a decrease of the ion energy deposited on the target. With the increase of the angle between the magnetic field and the target normal, the potential of the magnetized sheath and the proportion of the thickness of the electron sheath in the magnetized sheath both increase. The virtual cathode potential decreases, the temperature of the target required to form the virtual cathode rises.

Voltage waveform tailoring for high aspect ratio plasma etching of SiO2 using Ar/CF4/O2 mixtures: Consequences of ion and electron distributions on etch profiles

The quality of high aspect ratio (HAR) features etched into dielectrics for microelectronics fabrication using halogen containing low temperature plasmas strongly depends on the energy and angular distribution of the incident ions (IEAD) onto the wafer, as well as potentially that of the electrons (EEAD). Positive ions, accelerated to high energies by the sheath electric field, have narrow angular spreads and can penetrate deeply into HAR features. Electrons typically arrive at the wafer with nearly thermal energy and isotropic angular distributions and so do not directly penetrate deeply into features. These differences can lead to positive charging of the insides of the features that can slow etching rates and produce geometric defects such as twisting. In this work, we computationally investigated the plasma etching of HAR features into SiO2 using tailored voltage waveforms in a geometrically asymmetric capacitively coupled plasma sustained in an Ar/CF4/O2 mixture at 40 mTorr. The tailored waveform consisted of a sinusoidal wave and its higher harmonics with a fundamental frequency of 1 MHz. We found that some degree of control of the IEADs and EEADs is possible by adjusting the phase of higher harmonics φ through the resulting generation of electrical asymmetry and electric field reversal. However, the IEADs and EEADs cannot easily be separately controlled. The control of IEADs and EEADs is inherently linked. The highest quality feature was obtained with a phase angle φ = 0° as this value generated the largest (most negative) DC self-bias and largest electric field reversal for accelerating electrons into the feature. That said, the consequences of voltage waveform tailoring (VWT) on etched features are dominated by the change in the IEADs. Although VWT does produce EEADs with higher energy and narrower angular spread, the effect of these electrons on the feature compared to thermal electrons is not large. This smaller impact of VWT produced EEADs is attributed to thermal electrons being accelerated into the feature by electric fields produced by the positive in-feature charging.

Quantum anomalous layer Hall effect in the topological magnet MnBi2Te4

Recently, a type of Hall effect due to an unusual layer-locked Berry curvature called the layer Hall effect (LHE) has been reported in the even-layered two-dimensional antiferromagnetic (AFM) MnBi2Te4 [A. Gao et.al, Nature 595, 521 (2021)]. In this work, we report that the quantization of LHE, which we call the quantum anomalous layer Hall effect (QALHE), can be realized in MnBi2Te4. The QALHE originates from kicking a layer-locked Berry-curvature monopole out of the Fermi sea by a vertielectric cal field. Remarkably, we demonstrate that the electric-field reversal can switch the sign of the quantized Hall conductance of QALHE in the even-layered AFM phase. The QALHE can also be realized in the ferromagnetic phase. These results provide a promising way toward the electric engineering of the Berry curvature monopoles and quantized-layered transport in topological magnets.

Suppressing the Dynamic Oxygen Evolution of Sodium Layered Cathodes through Synergistic Surface Dielectric Polarization and Bulk Site-Selective Co-Doping.

Utilizing anionic redox activity within layered oxide cathode materials represents a transformational avenue for enabling high-energy-density rechargeable batteries. However, the anionic oxygen redox reaction is often accompanied with irreversible dynamic oxygen evolution, leading to unfavorable structural distortion and thus severe voltage decay and rapid capacity fading. Herein, it is proposed and validated that the dynamic oxygen evolution can be effectively suppressed through the synergistic surface CaTiO3 dielectric coating and bulk site-selective Ca/Ti co-doping for layered Na2/3 Ni1/3 Mn2/3 O2 . The surface dielectric coating layer not only suppresses the surface oxygen release but more importantly inhibits the bulk oxygen migration by creating a reverse electric field through dielectric polarization. Meanwhile, the site-selective doping of oxygen-affinity Ca into Na layers and Ti into transition metal layers effectively stabilizes the bulk oxygen through modulating the O 2p band center and the oxygen migration barrier. Such a strategy also leads to a reversible structural evolution with a low volume change because of the enhanced structural integrality and improved oxygen rigidity. Because of these synergistic advantages, the designed electrode exhibits greatly suppressed voltage decay and capacity fading upon long-term cycling. This study affords a promising strategy for regulating the dynamic oxygen evolution to achieve high-capacity layered cathode materials.