Abstract
In this work, we have investigated plasma-assisted deposition of Al2O3 on HVPE (001) β-Ga2O3 and evaluated the dielectric quality from electrical measurements on fabricated metal-oxide-semiconductor (MOS) capacitors. The interface structure and crystallinity of the films were investigated as a function of the growth temperature. The dielectric/semiconductor interfaces were found to have reverse breakdown electric fields up to 5.3 MV/cm in the β-Ga2O3, with relatively low hysteresis in capacitance–voltage and low leakage current. We determined a negative fixed interface charge density at the interface from analysis of thickness-dependent capacitance voltage data. This study shows the advantage of using plasma-assisted deposition to achieve high breakdown strength Al2O3/β-Ga2O3 MOS structures for device application purposes.
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