Reverse Bias Research Articles

High-performance deep-ultraviolet photodetector based on a single-crystalline ϵ-Ga2O3/Sn-doped In2O3 heterojunction

Abstract Metastable ϵ-Ga2O3, with its superior physical properties and high substrate compatibility, demonstrates considerable potential in developing heterojunction deep-ultraviolet photodetectors (DUV PDs). Herein, we fabricate a high-performance DUV PD utilizing a single crystalline ϵ-Ga2O3/ Sn-doped In2O3 (ITO) heterojunction. Under a reverse bias of 15 V, the device exhibits a high responsivity of 506 A/W, an excellent UV/visible rejection ratio of 6.74 × 104, and a fast fall time of 40 ms while maintaining good performance across a broad illumination range of 90–4100 μW cm−2. Moreover, the device can operate in a self-powered mode at zero bias, further verifying the presence of a depletion region within the ϵ-Ga2O3/ITO heterojunction. Our results demonstrate that ϵ-Ga2O3 is promising for high-quality integration on ITO and application in DUV detection, offering new strategic directions for developing high-performance Ga2O3-based DUV PDs.

Association between dried fruit intake and kidney function: research from univariate and multivariate Mendelian randomized studies

ObjectivesObservational studies have identified an association between dried fruit intake and kidney function. However, these studies have limitations such as vulnerability to confounders and reverse causality bias. Therefore, this study aimed to explore the potential causal relationship between dried fruit intake and kidney function.MethodsA two-sample Mendelian randomization (MR) study was conducted using a large-scale genome-wide association study dataset to investigate the causal relationship between dried fruit intake and kidney function markers (blood urea nitrogen (BUN), creatinine (CR), uric acid (UA), cystatin C (CyC), hematuria, microalbuminuria). The main analytical method was inverse variance weighting. In addition, we applied the MR Egger and weighted median to assess the robustness of the results. Finally, Multivariate Mendelian randomization (MVMR) was used to estimate the direct effect of dried fruit intake on kidney function markers.ResultsThe univariate MR analysis showed that increased dried fruit intake was associated with lower kidney function markers, including BUN (β: −0.171, 95% confidence interval (CI): −0.239 to −0.102, p = 1.063 × 10−6), CR (β: −0.205, 95% CI: −0.311 to −0.099, p = 1.455 × 10−4), UA (β = −0.317, 95% CI: −0.384 to −0.249, p = 4.439 × 10−20), and CysC (β = −0.323, 95% CI: −0.384 to −0.249, p = 1.074 × 10−11); however, it was unrelated to hematuria and microalbuminuria. Causality persisted after performing MVMR analysis; however, with the addition of alcohol consumption and smoking as exposure factors, the causality for UA (β = −0.296, 95% CI: −0.523 to −0.068, p = 1.094 × 10−2) and CysC (β = −0.238, 95% CI: −0.465 to −0.011, p = 4.024× 10−2) weakened, while the causality for BUN (β = −0.038, 95% CI: −0.215 to 0.138, p = 6.698 × 10−1) and CR (β = −0.038, 95% CI: −0.431 to 0.046, p = 1.347 × 10−1) disappeared.ConclusionIncreased dried fruit intake was associated with lower kidney function markers (BUN, CR, UA, and CysC) in the absence of smoking and alcohol consumption; however, the causal relationship between dried fruit intake and BUN and CR disappeared in the presence of smoking and alcohol consumption. These results provide a promising avenue for delaying the course of chronic kidney disease.

A highly efficient adaptive body bias CMOS rectifier with double-side feedback at a tone of 2.4 GHz

ABSTRACT In this paper, a highly efficient adaptive body bias CMOS rectifier employed with double side feedback, operating with 2.4 GHz frequency, is proposed for radio frequency energy harvesting. The proposed circuit is built with 45 nm TSMC CMOS technology. In the suggested architecture, the double side feedback along with body bias is used to regulate threshold voltage. The use of PMOS transistors as a diode in reverse bias configuration has restricted the reverse current without compromising the forward current. This design has gained a maximum PCE of 82.25% and 77.29% at an input power of −23.90dBm and −23.74dBm and 500K and 100K load, respectively. The circuit has maintained a wide dynamic range of 30dbm at PCE >30% and registered an input sensitivity of −10.07dBm for attaining a DC output voltage of 1 V as compared to the previous works.

Evidence of Spin Reorientation from Γ4 to Γ2 and Sign Reversal Exchange Bias in CeCrO3 Nanoparticles

Herein, the temperature‐dependent magnetic structure and sign reversal exchange bias in CeCrO3 using magnetization data and time‐of‐flight neutron diffraction data which is given less attention among RCrO3 are investigated. While nuclear structural analysis using Rietveld refinement exhibits distorted orthorhombic structure within Pnma space group, temperature dependence of the magnetic structure using neutron diffraction reveals possible spin configurations, namely, Γ4, Γ2, and Γ1, within the temperature range of 6–300 K. Temperature‐dependent magnetization shows compensation temperature, Tcomp, at 58 K, spin reorientation temperature, TSR, at 15 K along with a Neel temperature, TN, at 260 K which is the outcome of the competition between canted antiferromagnetic ordering of Cr3+ ions and Ce3+ ions in CeCrO3. Furthermore, the magnetization versus magnetic field (M vs H) measurements indicate transition of the Γ4 spin structure to Γ2 spin structure around TSR which is further supported by reversible‐to‐irreversible changes observed in temperature‐dependent MFCC and MFCW. Moreover, a temperature‐driven sign reversal of exchange bias in CeCrO3 is observed, resulting from the competition between antiferromagnetic coupling between chromium moment (MCr) and cerium moment (MCe) in these nanoparticles. This intriguing behavior holds significant potential for the development of thermally assisted magnetic random access memory.

High‐Gain and Tunable Linear Photodetection in 2D Tunneling Heterostructures Through Potential Engineering

Abstract2D materials are extensively employed in the fabrication of high‐performance photodetectors owing to their exceptional physical properties. However, most 2D material photodetectors fail to sustain high gain under intense illumination due to the limited intrinsic trap states. Here, an n‐n type Bi2O2Se/SnSe2 van der Waals tunneling heterojunction photodetector with a detection range from visible to near‐infrared (VIS‐NIR) is presented. Under reverse bias, the heterojunction induces a significant electron barrier and hole potential well, ensuring low leakage current and ample hole defect states. Therefore, the photodetector demonstrated a responsivity of 1636.3 AW−1 and a detectivity of 1.39 × 1014 Jones under 660 nm illumination, maintaining a tunable linear dynamic range (LDR) of ≈74.7 dB. This performance is attributed to the hole potential well‐suppressing the recombination of photogenerated carriers, thereby enhancing the device's gain. Furthermore, the tunneling of photogenerated electrons within the heterojunction's space charge region under bias enables rapid response (75.1 and 15.6 µs). In summary, the study introduces a novel strategy to overcome the limited detection capabilities of 2D devices under intense illumination, characterized by outstanding linearity for rapid detection and high‐resolution imaging.

Design and experimental verification of a novel high-reliability variation of lateral doping (VLD) termination

Abstract A novel two-dimensional mesh-like variation of lateral doping (VLD) termination (M-VLD) is proposed, which modifies the conventional ring-shaped track VLD termination (R-VLD) mask into an interconnected mesh-like structure. The comparative simulations and experiments show that M-VLD can achieve better blocking capability and reliability than R-VLD. Vertical double diffusion MOSFET (VDMOS) with M-VLD achieves a maximum breakdown voltage ( B V max ) of 1588 V, which is 62 V higher than that of VDMOS with R-VLD. Furthermore, the devices with M-VLD exhibit lower leakage currents in 150 °C reverse-biased I − V test and successfully pass 1000 h-125 °C-1200 V high-temperature reverse bias (HTRB) test, while the devices with R-VLD fail to pass both tests.

Performance improvement of microLED‐to‐microLED visible light communication using reverse bias

AbstractLED‐to‐LED visible light communication (VLC), which uses LEDs not only for the transmitter but also for the receiver, is being studied as an efficient optical wireless communication technology that uses LED lighting infrastructure. In this paper, we investigate microLED‐to‐LED VLC, which uses microLEDs as both the transmitter and receiver. In particular, we conducted a study to improve the performance of microLED‐to‐microLED VLC. For this, we measured the performance depending on the transmitter and receiver LED color combination. In addition, the effects of zero bias and reverse bias at the receiver LED were investigated. We also investigated the improvement in the reverse bias when applying a transimpedance amplifier to the receiver LED. Finally, we experimentally demonstrated a data rate of 360 kbps in the microLED‐to‐microLED VLC.

Demonstration of high-frequency self-pulsing oscillations in an active silicon micro-ring cavity

We experimentally investigated the self-pulsing (SP) oscillations induced by the thermo-optic, free carrier, and Kerr nonlinear effects in integrated active silicon microring resonators. We demonstrate high frequency self-pulsing oscillations (up to 30 MHz) by applying a few millivolts of reverse bias voltage to the PIN junction of the active cavity. We illustrate that the shape of those oscillations (i.e., frequency and duty cycle) can be controlled by adjusting the CW input power and applying a reverse bias voltage to the PIN junction for carrier removal. This controlling is important for synchronizing the cavity which is crucial for neural network applications. Furthermore, we utilize a mathematical model for visualizing the stability regions by numerically studying coupled mode theory in silicon microcavity under different conditions.

Novel hybrid TFET-FinFET 12T SRAM cells with enhanced write margin and read performance

This work presents two innovative 12T cells combining tunnel field-effect transistor (TFET) and fin field-effect transistor (FinFET) technologies. These cells address reverse bias current issues by incorporating separate paths for reading data and write enhancement cut transistors, enhancing hold/read/write static noise margin (H/R/WSNM), reducing read time, and minimizing power consumption from TFET leakage. At 0.6 V, the first (second) SRAM cell shows a WSNM improvement over O_7T, 8T, CA_10T, 12T, and HF_10T cells by 152 % (93 %), 152 % (93 %), 157.7 % (97.5 %), 95 % (50 %), and 104 % (57 %), respectively. The leakage power of the first (second) 12T TFET SRAM cell is two (four) orders of magnitude lower than O_7T and 8T SRAM cells. These hybrid SRAM cells also exhibit faster read operations across VDD voltage levels (0.3 V–1 V) and the first 12T cell demonstrates shorter write access times than 12T and CA_10T SRAM cells. These characteristics make the proposed cells particularly suitable for energy-efficient IoT devices and medical applications, where balancing power, area, performance, and data integrity is critical.

Optimizing Forward Drop and Reverse Leakage Trade‐Off in AlGaN/GaN Lateral Diode with Schottky‐Metal‐Insulator‐Semiconductor Cascode Anode

Herein, AlGaN/GaN lateral diode with the Schottky‐Metal‐Insulator‐Semiconductor (MIS) cascode anode (CALD) to optimize forward voltage drop (VF) and reverse leakage current (ILEAK) trade‐off is proposed. In the CALD device, a normally‐on Ni/HfO2/AlGaN MIS‐controlled channel as well as a lateral Ni/GaN Schottky contact are cascoded at the anode. The designed normally‐on MIS‐controlled channel has high electron concentration at forward bias and prevents high electric‐field at reverse bias, which ensure both low VF and low ILEAK. Meanwhile, the Ni/GaN Schottky contact with a high Schottky barrier height further suppresses the ILEAK. As a result, the fabricated CALD demonstrates an optimized VF–ILEAK trade‐off relationship, including a low VF of 1.6 V and a low ILEAK of 5.2 × 10−8 A mm−1 (at reverse voltage of 400 V), together with a high breakdown voltage (BV) >700 V. These high performances suggest that the CALD can be a promising candidate for GaN power diode applications requiring a better VF–ILEAK trade‐off.

Staff engagement, co‐workers' complementarity and employee retention: evidence from English NHS hospitals

AbstractRetention of skilled workers is essential for labour‐intensive organizations like hospitals, where an excessive turnover of doctors and nurses can reduce the quality and quantity of services provided to patients. Exploiting a unique and rich panel dataset based on employee‐level payroll and staff survey records from the universe of English NHS hospitals, we investigate empirically the role played by two non‐pecuniary job factors, staff engagement and the retention of complementary co‐workers, in affecting employee retention within the public hospital sector. We estimate dynamic panel data models to deal with reverse causality bias, and validate these estimates through unconditional quantile regressions with hospital‐level fixed effects. Our findings show that a one standard deviation increase in nurse engagement is associated with a 16% standard deviation increase in their retention; and also that a 10% increase in nurse retention is associated with a 1.6% increase in doctor retention, with this co‐workers' complementarity spillover effect driven by the retention of more experienced nurses. Nurse and doctor engagement is positively associated with managers who have effective communication, involve staff in the decision‐making process, and act on staff feedback; in particular, older nurse engagement is responsive to managers caring for staff health and wellbeing.

Epitaxy of >7 μm Thick GaN Drift Layers on 150 mm Si(111) Substrates Realizing Vertical PN Diodes with 1200 V Breakdown Voltage

Metal‐organic chemical vapor deposition growth of vertical GaN PN structures on 6″ Si(111) substrates enabling a 1200 V breakdown voltage is demonstrated. Thanks to an optimized buffer structure utilizing island growth in an AlN/Al0.1Ga0.9N superlattice, the threading dislocation density is drastically reduced, and sufficient compressive stress is incorporated in active GaN layers to compensate for the thermal mismatch. Crack‐free PN structures with drift layer thicknesses up to 7.4 μm are realized with a threading dislocation density of ≈5 × 108 cm−2 and an absolute wafer bow <50 μm. Quasi‐vertical PN diodes reveal a linear increase in the breakdown voltage with the drift layer thickness with an average breakdown field of ≈1.6 MV cm−1. Additionally, the leakage current is shown to decrease monotonically as the drift layer thickness increases. For a 7.4 μm thick drift layer with a net ionized donor concentration of 0.9 × 1016 cm−3, a high breakdown voltage of 1200 V, a low specific on‐resistance of 0.4 mΩ cm−2, and a low leakage current of 10−4 A cm−2 (at a reverse bias of 650 V) are obtained. These results demonstrate the great potential of cost‐effective vertical GaN‐on‐Si power devices operating in the kilovolt range.

A hBN/Ga2O3 pn junction diode.

The development of next-generation materials such as hBN and Ga2O3 remains a topic of intense focus owing to their suitability for efficient deep ultraviolet (DUV) emission and power electronic applications. In this study, we combine p-type hBN and n-type Ga2O3, forming a pseudo-vertical pn hBN/Ga2O3 heterojunction device. Rectification ratios > 105 (300K) and [Formula: see text]400 (475K) are observed and are amongst the highest values reported to date for ultra-thin hBN-based pn junctions. The measured current under forward bias is ~2mA, which we attribute to the shallow Mg acceptor level (60 meV), and 0.2 µA at -10V. Critically, device performance remains stable and highly repeatable after a multitude of temperature ramps to 475K. Capacitance-voltage measurements indicate widening the depletion region under increasing reverse bias voltage and a built-in voltage of 2.34V is recorded. The hBN p-type characteristic is confirmed by Hall effect, a hole concentration of [Formula: see text] cm-3 and mobility of 24.8 cm2/Vs is achieved. Mg doped hBN resistance reduces by >108 compared to intrinsic material. Future work shall focus on the optical emission properties of this material system.

Ski S. V. Influence of gamma irradiation on the reverse current-voltage characteristics of silicon photomultipliers

The study investigated the effect of Co60 gamma-quanta on the reverse current-voltage characteristic (IV) of silicon photomultiplier (SiPMs) with 1004 cells, which themselves were optically isolated from each other n+ –p–p+ -structures. The cells were optically isolated from each other by trenches filled with tungsten after passivation of the walls with SiO2 and Si3N4 layers. Two variants of structural design of SiPMs were studied. Two variants were tested for the trench metal connection in the SiPMs: variant BI connected the trench metal to the n+-region of the cell through a quenching polysilicon resistor, while variant BII connected it to the p+-region. The breakdown voltage of the investigated SiPMs was Ubr = 34 ± 1.0 V. The samples were irradiated in both the active electrical mode (avalanche breakdown mode) and the passive mode (reverse bias Ub = 0 V). It was discovered, that at dose of D = 106 rad, the dark current for SiPM (BI) and (BII) increased by 6–7 times when irradiated in passive mode and by 15–16 times for SiPM (BII) when irradiated in active mode. For SiPM (BI) irradiated in the avalanche breakdown mode, the dark current increased by 104 times at D = 105 rad. The research demonstrates that the radiation-induced degradation of the dark current in the SiPMs under study is due to an increase in the generation and, primarily, surface components. This is a result of the accumulation of positive charge in the insulating layer of the separating trenches.

Enhanced Threshold Voltage and Improved Subthreshold Swing Using NiOX/ITO Reverse Bias Gated Diamond pMOS

An increase in the device performance of diamond‐based p‐type metal–oxide–semiconductor (pMOS) transistors using a combination of p‐type nickel oxide and n‐type indium tin oxide (NiOX/ITO) reverse bias diode as the gate dielectric is reported. Negative threshold voltage pMOS transistors are desirable for digital circuits and power applications for fail‐safe operation. A Schottky gate‐based conventional diamond pMOS transistor suffers from many limitations, including a positive threshold voltage (VT). Herein, it is experimentally demonstrated that NiOX/ITO gate dielectric with Al gate contact circumvents many critical limitations, providing a negative threshold voltage of −1.2 V, improved subthreshold slope of 145 mV dec−1, current ON/OFF ratio >107, and peak gate leakage current reduction >103. An Al/NiOX‐based control gate structure shifts the VTH negative with improvements in crucial device performances. Adding a reverse bias junction through the Al/ITO/NiOX heterointerface with the Al metal gate further improves performance. The measured device characteristics are explained in a common framework of energy band diagram for all the devices.

Facile assembly of SnO2 thin film-based Al/SnO2/Al device for sensing of 260 nm UVC and 365 nm UVA radiation

An Al/SnO2/Al metal-semiconductor-metal (MSM) device was formed by depositing a ~55nm thin film of SnO2 on Si substrate. Structural, surface morphology and optical properties of the SnO2 film were studied. The current-voltage (I-V) characteristics of the device were recorded under the dark condition followed by 260 nm-UVC and 365 nm-UVA illumination conditions. Under the dark condition, the device shows a resistivity of 8.05 Ωcm at V=1.5V bias voltage. The device produces nearly symmetric rectifying-type I-V characteristics under forward and reverse bias conditions. The electrical properties of the device were explained using back-to-back Schottky diode model. Under the dark condition, the ideality factor of the junction under forward and reverse bias were estimated to be 1.08 and 1.72 respectively. The external quantum efficiency of the device under UVC was found to be ~518.72% and specific detectivity reached as high as 1.03×109 Jones at 2.0V with a response time of ~1s. The device showed a high signal-to-noise ratio between 0.5 and 1.5V bias voltages. The values of the ideality factor being greater than 1 was attributed to the presence of point defects in the SnO2 layer as verified by photoluminescence study. This study reveals that the device could be used as a UVC and UVA sensor at a relatively low bias voltage of ~1.5V.

Deep Traps in AlN Hydride Vapor Phase Epitaxy Film on Low-Temperature AlN/Sapphire

Deep trap states were examined in c-plane, Al-polar AlN epilayers, deposited via metal organic chemical vapor deposition on 270 nm thick AlN buffer layers on sapphire substrates. Contacts were created using e-beam deposited Ni through a shadow mask, with I-V characteristics revealing a trapped limited current (TLC) regime and voltage-dependent hysteresis upon light-emitting diode illumination. Thermally stimulated current and photothermal ionization current spectroscopy measurements demonstrated a prominent trap activation energy of approximately 0.75 eV and additional trap energies of 0.6, 0.4, 0.25, 1.05, and 1.1 eV. The observed differences in photocurrent responses between forward and reverse biases suggest that forward bias induces electron trapping at deeper levels, influencing the TLC behavior. Comparisons with bulk n-type AlN crystals from previous studies show similarities in deep trap spectra, suggesting commonality in trap characteristics across different AlN samples.

Schottky Diode Leakage Current Fluctuations: Electrostatically Induced Flexoelectricity in Silicon.

Nearly four decades have passed since IBM scientists pioneered atomic force microscopy (AFM) by merging the principles of a scanning tunneling microscope with the features of a stylus profilometer. Today, electrical AFM modes are an indispensable asset within the semiconductor and nanotechnology industries, enabling the characterization and manipulation of electrical properties at the nanoscale. However, electrical AFM measurements suffer from reproducibility issues caused, for example, by surface contaminations, Joule heating, and hard-to-minimize tip drift and tilt. Using as experimental system nanoscale Schottky diodes assembled on oxide-free silicon crystals of precisely defined surface chemistry, it is revealed that voltage-dependent adhesion forces lead to significant rotation of the AFM platinum tip. The electrostatics-driven tip rotation causes a strain gradient on the silicon surface, which induces a flexoelectric reverse bias term. This directional flexoelectric internal-bias term adds to the external (instrumental) bias, causing both an increased diode leakage as well as a shift of the diode knee voltage to larger forward biases. These findings will aid the design and characterization of silicon-based devices, especially those that are deliberately operated under large strain or shear, such as in emerging energy harvesting technologies including Schottky-based triboelectric nanogenerators (TENGs).

Separation of planar and edge contributions to total capacitance for accurate doping concentration determination in square silicon photodiodes

Accurately determining the doping concentrations of silicon photodiodes (PDs) is crucial for optimizing their performance in various applications. This study presents a methodology for separating the planar and edge contributions to the total capacitance of square silicon PDs with guard rings. Through capacitance-voltage measurements, we distinguished planar capacitance, which reflects the bulk properties of the silicon PD, from edge capacitance, influenced by device geometry and fringing fields. We demonstrated that the fabricated PDs with guard rings surrounding the active area could be effectively modeled using a coxial-like structure to estimate edge capacitance. Doping concentrations, depletion widths, and resistivities were determined through linear fitting of the inverse square of the measured capacitance per unit area as a function of the reverse bias voltage. All parameters obtained from the full depletion voltage Vd , determined by the intersection of the linear fits for V < Vd and V > Vd , demonstrated agreement within 1σ. Our results underscore the importance of accounting for edge effects to accurately determine doping concentrations from 1/C 2 vs. V plots.

The identification and analysis of meristematic mutations within the apple tree that developed the RubyMac sport mutation

BackgroundUnderstanding the molecular basis of sport mutations in fruit trees has the potential to accelerate generation of improved cultivars.ResultsFor this, we analyzed the genome of the apple tree that developed the RubyMac phenotype through a sport mutation that led to the characteristic fruit coloring of this variety. Overall, we found 46 somatic mutations that distinguished the mutant and wild-type branches of the tree. In addition, we found 54 somatic gene conversions (i.e., loss-of-heterozygosity mutations) that also distinguished the two parts of the tree. Approximately 20% of the mutations were specific to individual cell lineages, suggesting that they originated from the corresponding meristematic layers. Interestingly, the de novo mutations were enriched for GC = > AT transitions while the gene conversions showed the opposite bias for AT = > GC transitions, suggesting that GC-biased gene conversions have the potential to counteract the AT-bias of de novo mutations. By comparing the gene expression patterns in fruit skins from mutant and wild-type branches, we found 56 differentially expressed genes including 18 involved in anthocyanin biosynthesis. While none of the differently expressed genes harbored a somatic mutation, we found that some of them in regions of the genome that were recently associated with natural variation in fruit coloration.ConclusionOur analysis revealed insights in the characteristics of somatic change, which not only included de novo mutations but also gene conversions. Some of these somatic changes displayed strong candidate mutations for the change in fruit coloration in RubyMac.