Abstract
2D thermal radiation distribution together with I–V and L–I characteristics has been measured and analyzed in forward and reverse biased p–n heterostructures based on InAs0.9Sb0.1 and grown onto n-InAs substrates. The measurements revealed a sufficient difference in the temperature distribution onto the sample surface at forward and reverse bias, which is explained by an impact of heat pump operation initiated by an electron–phonon interaction at the p–n junction and diode contacts at U < 0.
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