Abstract
Abstract A novel two-dimensional mesh-like variation of lateral doping (VLD) termination (M-VLD) is proposed, which modifies the conventional ring-shaped track VLD termination (R-VLD) mask into an interconnected mesh-like structure. The comparative simulations and experiments show that M-VLD can achieve better blocking capability and reliability than R-VLD. Vertical double diffusion MOSFET (VDMOS) with M-VLD achieves a maximum breakdown voltage ( B V max ) of 1588 V, which is 62 V higher than that of VDMOS with R-VLD. Furthermore, the devices with M-VLD exhibit lower leakage currents in 150 °C reverse-biased I − V test and successfully pass 1000 h-125 °C-1200 V high-temperature reverse bias (HTRB) test, while the devices with R-VLD fail to pass both tests.
Published Version
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