Abstract
The failure of sub-module of press-packed devices in course of high temperature reverse bias (HTRB) test was investigated in this paper. A high temperature reverse bias test platform for press-packed devices was built, which was capable of monitoring and collecting continuous leak current data of devices during the test. Through the analysis of the static characteristics of the chip before and after the high temperature reverse bias test, a method that uses the combination of IV and CV characteristic curves to characterize high temperature reverse bias failure was proposed. By means of finite element analysis to locate the reasons for the change of static characteristics, the accumulated charges around the terminal of chip were considered to be the primary source for the failure of sub-module under the HTRB test.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
