Abstract
Based on the charge balance principle, an optimal impurity distribution variation of lateral doping termination (OID-VLD) and its ion-injection mask design method are proposed and verified. The comparative simulations and experiments show that OID-VLD can achieve better blocking ability and reliability than the traditional VLD (T-VLD). Vertical double diffusion MOSFET (VDMOS) with OID-VLD achieved breakdown voltage (BV) of 1684 V and passed the 168 hours 100 °C–110 °C–120 °C–125 °C high-temperature reverse bias (HTRB) test, while VDMOS with T-VLD obtained BV of 1636 V and failed in the 20 hours 120 °C HTRB test.
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