Resistive Switching Effect Research Articles

From Solid to Fluid: Novel Approaches in Neuromorphic Engineering.

Neuromorphic engineering is rapidly developing as an approach to mimicking processes in brains using artificial memristors, devices that change conductivity in response to the electrical field (resistive switching effect). Memristor-based neuromorphic systems can overcome the existing problems of slow and energy-inefficient computing that conventional processors face. In the Introduction, the basic principles of memristor operation and its applications are given. The history of switching in sandwich structures and granular metals is reviewed in the Historical Overview. Particular attention is paid to the fundamental articles from the pre-memristor era (the 1960s-70s), which demonstrated the first evidence of resistive switching and predicted the filamentary mechanism of switching. Multi-dimensionality in neuromorphic systems: Despite the powerful computational abilities of traditional memristor arrays, they cannot repeat many organizational characteristics of biological neural networks, i.e., their multi-dimensionality. This part reviews the unconventional nanowire- and nanoparticle-based neuromorphic systems that demonstrate incredible potential for use in reservoir computing due to the unique spiking change in conductance similar to firing in neurons. Liquid-based neuromorphic devices: The transition of neuromorphic systems from solid to liquid state broadens the possibilities for mimicking biological processes. In this section, ionic current memristors are reviewed and, the working principles of which bring us closer to the mechanisms of information transmittance in real synapses. Nanofluids: A novel direction in neuromorphic engineering linked to the application of nanofluids for the formation of reconfigurable nanoparticle networks with memristive properties is given in this section. The Conclusion t summarizes the bullet points of the Review and provides an outlook on the future of liquid-state neuromorphic systems.

Large resistive switching in ultrathin BiFeO3 thin films

Electrically induced resistive switching (RS) effects have been proposed as the basis for future non-volatile memories. In this work, 9 nm-thick BiFeO3 (BFO) epitaxial thin films were deposited on (001)-oriented SrTiO3 substrates by pulsed laser deposition and their resistive switching (RS) behaviors were investigated. A large resistive switching with ON/OFF ratio of ∼106 is observed, surpassing the performance of most resistive random access memories ever reported. The conducting filament is proposed to dominate the RS behavior in the positive voltage region, while the modulation of ferroelectric polarization is suggested to play a significant role in the negative voltage region. Our study significantly deepens the understanding of the physical origin of RS and could provide a reference for designing high-performance memories and memristors based on ultrathin ferroelectric films.

Analog‐Digital Hybridity of Resistive Switching in Ion‐Irradiated BiFeO3 Memristor for Synergistic Neuromorphic Functionality and Artificial Learning

AbstractMemristors‐based neuromorphic devices represent emerging computing architectures to perform complex tasks by outpacing the traditional Von‐Neumann architectures in terms of speed, and energy efficiency. In this work, the resistive switching (RS) behavior of sol‐gel grown and ion‐irradiated BFO films is investigated under electrical stimulus. The Ag/BFO/FTO memristors emulate a combination of digital and analog RS behavior within a single device. The possible mechanism of analog digital hybridity is addressed by considering the formation of the conducting filament by oxygen vacancies, Ag+ ions and Schottky barrier height modulation. The ion‐irradiated BFO samples are analyzed using the Raman, XRD, and XPS studies. To uphold bioinspired synaptic actions, crucial synaptic functionalities like pair‐pulse facilitation and long‐term potentiation/depression are effectively achieved. More intricate synaptic behaviors are also demonstrated such as spike‐time‐dependent plasticity and Pavlovian classical conditioning, which represent the prominent attributes of both learning and forgetting behavior. Additionally, high pattern recognition accuracy (96.1%) is achieved in an artificial neural network simulation by using the synaptic weights of the memristors. This synergistic effect of digital and analog RS in ion‐irradiated BFO can be beneficial for the emulation of complex learning behavior as well as its incorporation into low‐power neuromorphic computing.

Synaptic Feature of Quantum Dot Light-Emitting Diodes for Visualization of Learning Process.

Brain-inspired electronics with synaptic functions hold significant promise for advancing artificial intelligent applications. In this study, we demonstrate the synaptic feature of quantum-dot light-emitting diodes (QLEDs), which can convert electrical pulses into synapse-like light signals (the brightness gradually increases as the electrical pulses are prolonged). These features are analogous to learning and forgetting in biological synapses. The enhancement of brightness can be attributed to the reduction of charge transfer from the quantum dots to ZnO electron transport layer and resistive switching effect. With an integrated complementary metal-oxide-semiconductor (CMOS) drive, arrayed synaptic QLEDs can simulate the visualization of brain-like learning processes, which can reduce the noise toward high image recognition rate (>95.0%) by deep neural networks. Our findings introduce a novel brain-inspired optoelectronic approach with potential applications in optical neuromorphic systems.

Current–voltage characteristics of Ag/Nb:SrTiO3/Ag and Au/Nb:SrTiO3/Ag heterostructures

Ag/Nb:SrTiO3(NSTO)/Ag and Au/NSTO/Ag structures were prepared and their current–voltage curves were studied in detail. The Ag/NSTO/Ag structure can demonstrate a pronounced resistive switching effect and the characteristics of its resistance change sequence as demonstrated in the I–V curves are significantly different from those of the Au/NSTO/Ag structure. Under a unipolar current, the Ag/NSTO/Ag structure translates first from a low-resistance state (LRS) to a high-resistance state (HRS) and then from the HRS to the LRS. However, the Au/NSTO/Ag structure only shows a transition from the HRS to the LRS. The phenomenon is analyzed taking into account the migration of oxygen ions and the electrochemical reaction of the Ag electrode, which lead to the formation of the Ag2O insulation layer as well as Ag conductive filaments in the Ag/NSTO/Ag structure and a change in the barrier height of the Au/NSTO interface.

Ni3C nanosheets and PVA nanocomposite based memristor for low-cost and flexible non-volatile memory devices

Two-dimensional (2D) MXenes have gained extensive attention in the field of memristors due to their high ion mobility, chemical stability and tunable electrical and surface properties. Moreover, MXenes have tunable interlayer bonding which enables enhancement in memristor performance. In this work, we synthesize a novel nanocomposite of Ni3C nanosheets and polyvinyl alcohol (PVA) and fabricate a flexible memristor with Ag/Ni3C-PVA/ITO/PET configuration for non-volatile memory applications. Ni3C nanosheets were synthesized from Ni-MAX (Ni3AlC2) through a solvothermal etching and exfoliation process. The nanosheet like structure of Ni3C is confirmed through Scanning Electron Microscopy (SEM) and Transmission Electron microscopy (TEM). Characterization techniques like X-ray diffraction (XRD), Raman spectroscopy and Fourier Transform Infrared Spectroscopy (FTIR) reveal the crystalline phases, surface functional groups and chemical bonds present in Ni3C nanosheets and Ni3C-PVA nanocomposite. The memristor was fabricated through a facile low cost solution processed based fabrication technique. The Ag/Ni3C-PVA/ITO/PET memristor exhibits bipolar non-volatile switching characteristics. The device with optimised mass ratio of 4:3 (Ni3C: PVA) shows a decent off/on ratio of 2.09 × 102, long retention time of 104 s, and an endurance of 102 DC cycles. The SET voltage of the as-fabricated device is 2.8 V and the RESET voltage is −5.33 V. The flexible memristor exhibits outstanding mechanical robustness over 500 bending cycles. The high charge carrier mobility of Ni3C results in lower switching voltage and the dielectric property of PVA improves data retention and off/on ratio of the memristor. The resistive switching behaviour is explained through conductive metallic bridge mechanism. The conduction mechanism follows Ohmic conduction in ON state and trap controlled space charge limited current (TCSCLC) mechanism in OFF state. The results demonstrate that the nanocomposite with its superior resistive switching effects is suitable for cost-effective, high-performance, flexible non-volatile memory devices.

Optically Mediated Nonvolatile Resistive Memory Device Based on Metal-Organic Frameworks.

Metal-organic frameworks (MOFs), characterized by tunable porosity, high surface area, and diverse chemical compositions, offer unique prospects for applications in optoelectronic devices. However, the prevailing research on thin-film devices utilizing MOFs has predominantly focused on aspects such as information storage and photosensitivity, often neglecting the integration of the advantages inherent in both photonics and electronics to enhance optical memory. This work demonstrates a light-mediated resistive memory device based on a highly oriented porphyrin-based MOFs film, in which the resistance state of the memristor is modulated by light, realizing the integration of the perception and storage of optical information. The memristor shows excellent performance with a wide light range of 405-785nm and a persistent photoconductivity phenomenon up to 8.3 × 103 s. Further mechanistic studies have revealed that the resistive switching effect in the memristor is primarily associated with the reversible formation and annihilation of Ag conductive filaments.

Metal-organic framework and MXene (ZIF-8:Ti3C2Tx) based organic and inorganic nanocomposite for bio-synaptic applications

Organic and inorganic hybrid materials have drawn more interest in the field of electronic devices. The metal-organic frameworks (MOFs) have emerged as one of the promising hybrid materials for electronic devices. However, their limited electrical conductivity hinders their electronic applications. To overcome these shortcomings, we synthesized MOF:MXene nanocomposite to enhance the stability and electrical conductivity of MOF. In particular, we synthesized and characterized zeolitic imidazolate framework-8 (ZIF-8):MXene (Ti3C2Tx) hybrid nanocomposite. From the application point of view, we demonstrated the analog memory effect and mimicked various synaptic learning functionalities using Ag/ZIF-8:Ti3C2Tx/FTO resistive switching (RS) device. The fabricated device exhibits a good analog-type bipolar RS effect. The device mimics various bio-synaptic properties such as potentiation, depression, excitatory-post synaptic current, and paired-pulse facilitation (PPF) index (%). The inherent non-ideal memristor property was dominated in the device, owing to the double-valued charge-flux relation. The conduction and possible RS mechanisms of the Ag/ZIF-8:Ti3C2Tx/FTO device were reported. These results suggested that the ZIF-8:Ti3C2Tx nanocomposite is a potential nanomaterial for brain-inspired computing applications.

Formation of BaTiO3 thin films for energy-efficient memristive applications

This paper shows the results of experimental studies of the influence of oxygen pressure under pulsed laser deposition on the electrophysical parameters of BaTiO3 nanocrystalline films. The elemental composition of BaTiO3 films obtained at different pressures (1×10−5 Torr (vacuum) and 1×10−2 Torr (oxygen)) was studied by XPS methods. Based on the obtained results, the energy-efficient memristor structures based on BaTiO3 nanocrystalline films were proposed. It was found that 20-nm-thick BaTiO3 films based memristive structure exhibited stable resistive switching effect: HRL/LRS∼10 for 100000 cycles. The results obtained can be used to fabricate energy-efficient memristive structures.

Preparation and patterning of HfO2 film via sol–gel method and resistive switching effect of Pt/HfO2/LaNiO3

Sol–gel method is a low-cost material preparation method; however, it is difficult to obtain a stable sol containing easily hydrolyzable metal ions via this method. In this study, a stable hafnium(IV) oxide (HfO2) sol was prepared by adding benzoyl acetone (BzAcH) modifier. Infrared absorption spectroscopy results showed that the BzAcH additive chelated with the Hf4+ ions in the sol, thus improving the hydrolysis resistance of the HfO2 sol, which in turn improved its stability. It was also found that the BzAcH-modified HfO2 gel film exhibited ultraviolet (UV) photosensitivity. After UV exposure, the film did not dissolve easily in organic solvents. Based on these properties, the micro processing of the HfO2 film was preliminarily explored, and HfO2 microstructures were successfully obtained. Additionally, the relative permittivity (εr) of HfO2 exhibited minimum (∼10.9) and maximum (∼20.6) values at heat-treatment (HT) temperatures of 350 and 450 °C, respectively. With the continuous increase in the HT temperature, εr first decreased and then increased slightly. Moreover, the current–voltage curves showed that the Pt/HfO2/LaNiO3 (LNO) structure exhibited a pronounced bipolar resistive switching (RS) effect, which was attributed to the fact that LNO could be used as an electrode and an oxygen vacancy (OV2+) storage layer for RS materials. Notably, the oxygen ions in HfO2 with a low degree of crystallinity are more likely to migrate within its body (which makes it easier to form OV2+s), therefore, the “Set” voltage of low-crystallinity HfO2 films is lower than that of high-crystallinity HfO2 films. The RS mechanism can be explained by the OV2+ conductive filament model. These results are of great practical significance for the low-cost preparation of HfO2 and the application of LNO as an oxide electrode.

Resistive Switching Mechanism in Ferroelectric Memristors with Thin Polycrystalline Barium Titanate Film

In a ferroelectric memristor, the manifestation of resistive effects is most often associated with the influence of polarization and dynamics of the domain structure on the charge transport. The role of point defects is either not taken into account or is reduced to the modulation of potential barriers at the interfaces with electrodes. However, the similarity of charge transport mechanisms in memristors based on thin ferroelectric and metal-oxide films suggests that the contribution of point defects in the anionic sublattice, namely, oxygen vacancies, to the resistive switching in ferroelectric memristors may be dominant. In order to identify the key factors responsible for resistive tuning in a ferroelectric memristor, a combined experimental and theoretical study of resistive switching effects in 10-nm polycrystalline barium titanate films was performed. X-ray photoelectron spectroscopy, piezoresponse force microscopy and scanning tunneling microscopy were employed to investigate the local resistive and ferroelectric properties and to estimate the stoichiometry of the films. A drift-diffusion numerical model of non-stationary processes in thin ferroelectric films was developed, including the Poisson equation and the continuity equation for each component of mobile charge carriers. Using the developed model as well as experimental I—V characteristics taken with scanning tunneling spectroscopy, the contribution of various mechanisms to the resistive switching in ferroelectric memristors with polycrystalline barium titanate has been studied. Non-stationary processes involving oxygen vacancies were found to govern the resistive switching.

Perylene-Based columnar liquid Crystal: Revealing resistive switching for nonvolatile memory devices

Perylene-based columnar liquid crystal (LC) devices exhibit resistive switching (RS), clearly identified on cyclic J-V curve hysteresis, stable for several cycles. Trap-controlled SCLC conduction is responsible for the charge transport in the active layer, where the “set” and “reset” processes occur. The incorporation of ZnO@SiO2 quantum dots significantly enhances the RS response. The distinguishing result presented here is the ability to write-read-erase-read, controlling the “on” and “off” states by applying an external electric field, which allows to store and read information multiple times. An endurance of nearly one order of magnitude between the low and high RS states was determined over 50 consecutive cycles. The device proved to be resilient, preserving the resistive switching effect and memory capacity even after one year maintained at room temperature and ambient atmosphere. DFT calculations indicate a conduction mechanism based on reversible reductions of the perylene LC molecules. This article highlights the ability of LCs to store and process information via their resistivity, with potential for low-cost production and large-area nonvolatile printed organic memories.

Al2O3/SnC heterostructure: Physical properties, regulation effect and device design

Two van der Waals (vdW) heterostructures between Al2O3 and SnC monolayers are constructed by the Generalised Lattice Matching (GLM) method. We calculate the elastic constants of monolayers and heterostructure and find that the heterostructures show larger Young’s modulus (220−234) N/m compared with Al2O3 (SnC), the reasonable Poisson’s ratio is about 0.3 and gravity-induced bending is the order of 104, which is comparable to graphene. The electronic properties, optical absorption coefficient and transmission properties of the heterostructure also have been investigated. Some important discoveries can be obtained: The Al2O3/SnC heterostructure shows an indirect bandgap (Eg) semiconductor with 1.70 eV and type II band arrangement when the ferroelectric polarization of Al2O3 points to SnC. While the polarization direction of Al2O3 is opposite, the Eg is zero. The physical properties are manipulated by some conditions (strain and electric field), leading to transitioning between Type II and I semiconductors, semiconductors and metal can be experienced. Moreover, the heterostructures prefer the higher light adsorption coefficient (105 cm−1) compared to monolayers. The transport properties of the Al2O3/SnC linked by two silicene electrodes show an excellent tunnel electroresistance (TER) effect with 108, moreover, the negative differential resistance (NDR) effect and switching effect also can be observed.

Interfacial Thermal Resistive Switching in (Pt,Cr)/SrTiO3 Devices.

The operation of oxide-based memristive devices relies on the fast accumulation and depletion of oxygen vacancies by an electric field close to the metal-oxide interface. Here, we show that the reversible change of the local concentration of oxygen vacancies at this interface also produces a change in the thermal boundary resistance (TBR), i.e., a thermal resistive switching effect. We used frequency domain thermoreflectance to monitor the interfacial metal-oxide TBR in (Pt,Cr)/SrTiO3 devices, showing a change of ≈20% under usual SET/RESET operation voltages, depending on the structure of the device. Time-dependent thermal relaxation experiments suggest ionic rearrangement along the whole area of the metal/oxide interface, apart from the ionic filament responsible for the electrical conductivity switching. The experiments presented in this work provide valuable knowledge about oxide ion dynamics in redox-based memristive devices.

Dynamics of Analog Switching Behavior in Thin Polycrystalline Barium Titanate

AbstractEngineering of interfaces and point defects in ferroelectric memristors is an efficient way for manipulating the resistive switching effects of mixed ionic‐electronic nature. However, an interplay between the defects, interfacial properties, and ferroelectric polarization as well as their influence on the resistance state tuning are yet to be revealed. By considering the memristive device built on a thin polycrystalline BaTiO3 film, a drift‐diffusion model of non‐stationary processes is developed. The model is based on Poisson and continuity equations solved numerically and accounts for various transport mechanisms for electrons, holes, and oxygen vacancies. Comparing simulated resistive effects with experimental data taken in a wide temperature range, it is shown that an appearance of the analog resistive switching cannot be explained solely by oxygen‐ionic transport. Investigated switching dynamics claims the oxygen vacancies redistribution to be responsible for the analog character of the switching at the prevalence of the electron hopping transport. Crucially, the required dynamics of the vacancies redistribution is achieved only in a narrow range of their mobility. These results can be used in designing the ferroelectric memristors for nonvolatile multilevel memory devices satisfying the requirements that arise at the stages of their integration into neuromorphic architectures.

Photovoltaic and resistance switching properties of NiO/Pb0.92La0.08(Zr0.52Ti0.48)O3/LaNiO3

Due to its excellent ferroelectricity and photovoltaic effect (PE), Pb0.92La0.08(Zr0.52Ti0.48)O3 (PLZT) has considerable application potential in the field of multifunctional electronic devices. In this study, an Ag/NiO/PLZT/LaNiO3 structure is prepared on a Si substrate via a combination of sol–gel and pulsed laser deposition methods, and its ferroelectricity, PE and resistance switching (RS) properties are studied in detail. With decrease in temperature, coercive field of PLZT increases, and its residual polarization initially remains constant and then decreases. The results of ultraviolet-irradiation experiments show that the photogenerated open-circuit voltage (Vo) of PLZT first increases slightly and then decreases slightly as the temperature decreases. By changing the direction of PLZT polarization, the polarization field can be oriented in the same direction or opposite to the built-in electric field formed by p–n junction at NiO/PLZT interface. Thus, the total electric field required to drive the photogenerated carriers inside the structure can be tuned, which results in different Vo values. Furthermore, current–voltage characteristics of the structure are tested. It is found that as different polarization charges are generated at the NiO/PLZT interface for different PLZT polarization directions, the holes in NiO can be attracted or repelled by these polarization charges. Thereby, the interface barrier height of the p–n junction can be varied. Consequently, the structure exhibits a pronounced RS effect suitable for multilevel storage applications. These results represent an important experimental basis for the development and application of multifunctional electronic devices for optoelectronics and RS-based memories.

Tuning the superconducting performance of YBa2Cu3O7-δ films through field-induced oxygen doping.

The exploration of metal-insulator transitions to produce field-induced reversible resistive switching effects has been a longstanding pursuit in materials science. Although the resistive switching effect in strongly correlated oxides is often associated with the creation or annihilation of oxygen vacancies, the underlying mechanisms behind this phenomenon are complex and, in many cases, still not clear. This study focuses on the analysis of the superconducting performance of cuprate YBa2Cu3O7-δ (YBCO) devices switched to different resistive states through gate voltage pulses. The goal is to evaluate the effect of field-induced oxygen diffusion on the magnetic field and angular dependence of the critical current density and identify the role of induced defects in the switching performance. Transition electron microscopy measurements indicate that field-induced transition to high resistance states occurs through the generation of YBa2Cu4O7 (Y124) intergrowths with a large amount of oxygen vacancies, in agreement with the obtained critical current density dependences. These results have significant implications for better understanding the mechanisms of field-induced oxygen doping in cuprate superconductors and their role on the superconducting performance.

Domain-modified engineering for low-power resistive switching in ferroelectric diodes

Neuromorphic devices based on ferroelectric resistive switching (RS) effects are promising to simulate the information recognition and memory of the human brain. However, the high power of RS elements in crossbar arrays is still an issue, limiting the neuromorphic applications. Here, we propose a domain-modified engineering for low-power RS in ferroelectric diodes by locally introducing relaxor ferroelectric units to lower domain switching barriers. A low-power RS of ∼ 70 μW, with large OFF/ON resistance ratio and high endurance, is achieved in Au/0.8BaTiO3-0.1Ba0.7Sr0.3TiO3-0.1BaTi0.7Zr0.3O3/Pt diodes, which is about 48.5% lower than that in Au/BaTiO3/Pt diodes. The interaction between macrodomains is depressed by domain modification engineering, lowering domain switching barriers, thereby operating voltage and power are significantly modulated. Meanwhile, good nonvolatility is obtained since the remanent polarization is partially maintained by the initial macrodomains and its decrease is slowed down by the relaxor units. This work provides a strategy to lower RS power by domain modification engineering for developing memristors and neuromorphic computing devices.

Volatile and Nonvolatile Resistive Switching Coexistence in Conductive Point Hexagonal Boron Nitride Monolayer.

Recently, we demonstrated the nonvolatile resistive switching effects of metal-insulator-metal (MIM) atomristor structures based on two-dimensional (2D) monolayers. However, there are many remaining combinations between 2D monolayers and metal electrodes; hence, there is a need to further explore 2D resistance switching devices from material selections to future perspectives. This study investigated the volatile and nonvolatile switching coexistence of monolayer hexagonal boron nitride (h-BN) atomristors using top and bottom silver (Ag) metal electrodes. Utilizing an h-BN monolayer and Ag electrodes, we found that the transition between volatile and nonvolatile switching is attributed to the thickness/stiffness of chain-like conductive bridges between h-BN and Ag surfaces based on the current compliance and atomristor area. Computations indicate a "weak" bridge is responsible for volatile switching, while a "strong" bridge is formed for nonvolatile switching. The current compliance determines the number of Ag atoms that undergo dissociation at the electrode, while the atomristor area determines the degree of electric field localization that forms more stable conductive bridges. The findings of this study suggest that the h-BN atomristor using Ag electrodes shows promise as a potential solution to integrate both volatile neurons and nonvolatile synapses in a single neuromorphic crossbar array structure through electrical and dimensional designs.

Theory for nonlinear conductivity switching in semiconducting organic ferroelectrics.

In this work, the ferroelectric and semiconducting properties of the organic semiconducting ferroelectric benzotrithiophene tricarboxamide (BTTTA), and especially their nonlinear coupling, are theoretically investigated. BTTTA is an exponent of a small class of semiconducting organic ferroelectrics for which experiments have established a surprising polarization direction dependence of the bulk conductivity at finite fields. First, molecular dynamics (MD) simulations are used to investigate the occurrence and, under the influence of an external electric field, the inversion of the macroscopic electric dipole that forms along the axis of supramolecular columns of BTTTA. The MD results are consistent with the experimentally observed ferroelectric behavior of the material. Building on the MD results, a QM/MM scheme is used to investigate the charge carrier mobility in the quasi-1D BTTTA stacks in the linear and non-linear regimes. Indeed, at finite electric fields, a clear resistance switching effect was observed in the form of a hole mobility that is a factor ∼2 larger for antiparallel orientations of the polarization and field than for a parallel orientation. This phenomenon can be understood as a microscopic ratchet that is based on the non-equilibrium interaction between the (oriented) dipoles and the (direction of the) charge transport.