Abstract
Two van der Waals (vdW) heterostructures between Al2O3 and SnC monolayers are constructed by the Generalised Lattice Matching (GLM) method. We calculate the elastic constants of monolayers and heterostructure and find that the heterostructures show larger Young’s modulus (220−234) N/m compared with Al2O3 (SnC), the reasonable Poisson’s ratio is about 0.3 and gravity-induced bending is the order of 104, which is comparable to graphene. The electronic properties, optical absorption coefficient and transmission properties of the heterostructure also have been investigated. Some important discoveries can be obtained: The Al2O3/SnC heterostructure shows an indirect bandgap (Eg) semiconductor with 1.70 eV and type II band arrangement when the ferroelectric polarization of Al2O3 points to SnC. While the polarization direction of Al2O3 is opposite, the Eg is zero. The physical properties are manipulated by some conditions (strain and electric field), leading to transitioning between Type II and I semiconductors, semiconductors and metal can be experienced. Moreover, the heterostructures prefer the higher light adsorption coefficient (105 cm−1) compared to monolayers. The transport properties of the Al2O3/SnC linked by two silicene electrodes show an excellent tunnel electroresistance (TER) effect with 108, moreover, the negative differential resistance (NDR) effect and switching effect also can be observed.
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