Abstract
Two-dimensional (2D) MXenes have gained extensive attention in the field of memristors due to their high ion mobility, chemical stability and tunable electrical and surface properties. Moreover, MXenes have tunable interlayer bonding which enables enhancement in memristor performance. In this work, we synthesize a novel nanocomposite of Ni3C nanosheets and polyvinyl alcohol (PVA) and fabricate a flexible memristor with Ag/Ni3C-PVA/ITO/PET configuration for non-volatile memory applications. Ni3C nanosheets were synthesized from Ni-MAX (Ni3AlC2) through a solvothermal etching and exfoliation process. The nanosheet like structure of Ni3C is confirmed through Scanning Electron Microscopy (SEM) and Transmission Electron microscopy (TEM). Characterization techniques like X-ray diffraction (XRD), Raman spectroscopy and Fourier Transform Infrared Spectroscopy (FTIR) reveal the crystalline phases, surface functional groups and chemical bonds present in Ni3C nanosheets and Ni3C-PVA nanocomposite. The memristor was fabricated through a facile low cost solution processed based fabrication technique. The Ag/Ni3C-PVA/ITO/PET memristor exhibits bipolar non-volatile switching characteristics. The device with optimised mass ratio of 4:3 (Ni3C: PVA) shows a decent off/on ratio of 2.09 × 102, long retention time of 104 s, and an endurance of 102 DC cycles. The SET voltage of the as-fabricated device is 2.8 V and the RESET voltage is −5.33 V. The flexible memristor exhibits outstanding mechanical robustness over 500 bending cycles. The high charge carrier mobility of Ni3C results in lower switching voltage and the dielectric property of PVA improves data retention and off/on ratio of the memristor. The resistive switching behaviour is explained through conductive metallic bridge mechanism. The conduction mechanism follows Ohmic conduction in ON state and trap controlled space charge limited current (TCSCLC) mechanism in OFF state. The results demonstrate that the nanocomposite with its superior resistive switching effects is suitable for cost-effective, high-performance, flexible non-volatile memory devices.
Published Version
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