Abstract
This paper shows the results of experimental studies of the influence of oxygen pressure under pulsed laser deposition on the electrophysical parameters of BaTiO3 nanocrystalline films. The elemental composition of BaTiO3 films obtained at different pressures (1×10−5 Torr (vacuum) and 1×10−2 Torr (oxygen)) was studied by XPS methods. Based on the obtained results, the energy-efficient memristor structures based on BaTiO3 nanocrystalline films were proposed. It was found that 20-nm-thick BaTiO3 films based memristive structure exhibited stable resistive switching effect: HRL/LRS∼10 for 100000 cycles. The results obtained can be used to fabricate energy-efficient memristive structures.
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