Remnant Polarization Research Articles

High performance and nearly wake-up free Hf0.5Zr0.5O2ferroelectric capacitor realized by middle layer strategy with BEOL compatibility.

Hf0.5Zr0.5O2(HZO) has drawn great attention owing to its excellent ferroelectricity, sub-10 nm scalability, and CMOS compatibility. With regard to increasingly restrict thermal budget and power consumption, conventional HZO films need further optimization to meet these demands. Here, we propose a middle layer (ML) strategy aiming to enhance ferroelectricity and inhibit wake-up effect of ferroelectric (FE) capacitors compatible with back-end of line (BEOL) under the low operating electric field. ZrO2, HfO2, and Al2O3were integrated into HZO film as different MLs. Among them, the device with ZrO2ML achieves the excellent double remnant polarization (2Pr) of 41.7 μC/cm2under the operating electric field of 2 MV/cm. Moreover, ultralow wake-up ratios of around 0.08 and 0.05 were observed under 2 MV/cm and 3 MV/cm, respectively. Additionally, the FE capacitor with ZrO2ML demonstrated an enhanced reliability characterizations, including a stable 2Pr of 40.7 μC/cm2after 4.3×109cycles. This work provides the perspective to optimize both the ferroelectricity and reliability, while maintains the ultralow wake-up ratio in HfO2-based ferroelectric through middle layer engineering.&#xD.

A study on BaTiO3 – NiFe2O4 composite; microstructure, multiferroic and magnetodielectric properties

The lead-free x NiFe2O4 – (1-x) BaTiO3 (x = 0, 0.05, 0.1, 0.15) multiferroic composites were prepared via the solid-state sintering technique. Microstructure, multiferroic, and magnetodielectric properties of composites were investigated. According to the XRD data (from x = 5 to 15 wt%), the tetragonality factor (cT/aT) and unit cell volume of the BaTiO3 (BTO) crystal system diminished. Based on SEM images, ferromagnetic NiFe2O4 (NFO) grains are uniformly dispersed in the ferroelectric BTO matrix without additional reaction in the interfaces of two phases. The highest values of dielectric (dielectric constant (εr) ∼ 1905 and dielectric loss factor (tan δ) ∼ 0.049) and ferroelectric properties (saturation polarization (PS) ∼ 13 μC/cm2 and remnant polarization (Pr) ∼ 10 μC/cm2) are attained for x = 5 wt% due to the lowest NFO (non-ferroelectric) concentration. Also, with increasing ferrite concentration (up to 15 wt%), the ferroelectric properties of the composites show a gradual decrease. The saturation magnetization (MS) values rise due to increasing ferrite concentration (from 2 to 5 emu/g for x = 5 to 15 wt%). Moreover, coercivity (HC) drops from 150 to 110 Oe. The simultaneous observation of the ferroelectric and ferromagnetic characteristic hysteresis loops confirmed the multiferroic effect for x = 5, 10, and 15 wt%. The highest magnetodielectric constant (3 %) is obtained for x = 15 wt% multiferroic composite at the applied magnetic field of 6 kOe.

Improving the Energy Storage Performance in Bi0.5Na0.5TiO3-Based Ceramics by Combining Relaxor and Antiferroelectric Properties.

Ceramic capacitors have received great attention for use in pulse power systems owing to their ultra-fast charge-discharge rate, good temperature stability, and excellent fatigue resistance. However, the low energy storage density and low breakdown strength (BDS) of ceramic capacitors limit the practical applications of energy storage technologies. In this work, we present a series of relaxor ferroelectric ceramics (1-x) [0.94 Bi0.5Na0.5TiO3 -0.06BaTiO3]- x Sr0.7Bi0.2TiO3 (1-x BNT-BT- x SBT; x = 0, 0.20, 0.225, 0.25, 0.275 and 0.30) with improved energy storage performances by combining relaxor and antiferroelectric properties. XRD, Raman spectra, and SEM characterizations of BNT-BT-SBT ceramics revealed a rhombohedral-tetragonal phase, highly dynamic polar nanoregions, and a reduction in grain size with a homogeneous and dense microstructure, respectively. A high dielectric constant of 1654 at 1 kHz and low remnant polarization of 1.39 µC/cm2 were obtained with the addition of SBT for x = 0.275; these are beneficial for improving energy storage performance. The diffuse phase transition of these ceramics displays relaxor behavior, which is improved with SBT and confirmed by modified the Curie-Weiss law. The combining relaxor and antiferroelectric properties with fine grain size by the incorporation of SBT enables an enhanced maximum polarization of a minimized P-E loop, leading to an improved BDS. As a result, a high recoverable energy density Wrec of 1.02 J/cm3 and a high energy efficiency η of 75.98% at 89 kV/cm were achieved for an optimum composition of 0.725 [0.94BNT-0.06BT]-0.275 SBT. These results demonstrate that BNT-based relaxor ferroelectric ceramics are good candidates for next-generation ceramic capacitors and offer a potential strategy for exploiting novel high-performance ceramic materials.

Synergistic regulation of Nd2O3 doping and components accommodation to attain enhanced electrical performance in BiScO3-PbTiO3 high temperature ceramics

Nd2O3-modified BiScO3-PbTiO3 (Nd: BS-PT) ceramics were synthesized with the aim of augmenting the piezoelectric response. A comprehensive investigation was conducted to explore the impact of Nd and PT content on the structure, microstructure, and electrical properties of Nd: BS-PT ceramics. The introduction of Nd ions resulted in notable enhancements in the piezoelectric and dielectric properties of BS-PT ceramics. In the case of 0.02Nd: BS-0.64PT, the piezoelectric coefficient (d33) reached an impressive 550 pC/N. Furthermore, the room-temperature dielectric constants exhibited a continuous increase with rising Nd content. The relaxation behavior demonstrated a progressive augmentation corresponding to the increased Nd content. Conversely, both saturation polarization and remnant polarization exhibited a gradual decline with increasing Nd content. These variations are attributed to the refined microstructure and enhanced relaxation behavior induced by Nd doping. This innovative Nd: BS-PT ceramic demonstrates that judicious incorporation of Nd can markedly enhance the piezoelectric properties of BS-PT ceramics. Such a modification significantly augments the performance of BS-PT ceramics across various applications, notably in sensors and actuators.

Ultrahigh Capacitive Energy Storage in a Heterogeneous Nanolayered Composite

AbstractFerroelectric polymers with robust electrical polarization have been extensively investigated for capacitive energy storage. However, their inherent ferroelectric hysteresis loss limits the discharged energy density and compromises energy efficiency. Here, a heterogeneous nanolayered composite of ferroelectric polymer poly(vinylidene fluoride‐trifluoroethylene) (P(VDF‐TrFE)) and Al2O3 is presented, which effectively mitigates ferroelectric hysteresis loss while maintaining high polarization and enhanced breakdown strength. Phase‐field simulations indicate that the polarization behaviors of the heterogeneous layered structure are jointly influenced by the thickness and dielectric constant of each component, which balances the electrical energy and Landau energy within the heterogeneous system. Guided by the theoretical simulations, optimized polarization behaviors are achieved with a significant reduction in remnant polarization and ferroelectric loss in the P(VDF‐TrFE)/Al2O3 composites through careful control of P(VDF‐TrFE) thickness at nanometer scale. Moreover, the presence of multiple interfaces in the layered composites leads to a remarkable enhancement in polarization and breakdown strength. Consequently, an ultrahigh energy density of about 108 J cm−3 is achieved with a high charge–discharge efficiency of exceeding 80%. This work not only presents a straightforward approach to modify the polarization behaviors of ferroelectric polymers but also demonstrates a promising strategy for developing high‐energy‐density polymer nanocomposites.

Peptide programming of supramolecular vinylidene fluoride ferroelectric phases.

Ferroelectric structures have spontaneous macroscopic polarization that can be inverted using external electric fields and have potential applications including information storage, energy transduction, ultralow-power nanoelectronics1,2 and biomedical devices3. These functions would benefit from nanoscale control of ferroelectric structure, the ability to switch polarization with lower applied fields (low coercive field) and biocompatibility. Soft ferroelectrics based on poly(vinylidene fluoride) (PVDF)4-6 have a thermodynamically unstable ferroelectric phase in the homopolymer, complex semi-crystalline structures, and high coercive fields. Here we report on ferroelectric materials formed by water-soluble molecules containing only six VDF repeating units covalently conjugated to a tetrapeptide, with the propensity to assemble into the β-sheet structures that are ubiquitous in proteins. This led to the discovery of ribbon-shaped ferroelectric supramolecular assemblies that are thermodynamically stable with their long axes parallel to both the preferred hydrogen-bonding direction of β-sheets and the bistable polar axes of VDF hexamers. Relative to a commonly used ferroelectric copolymer, the biomolecular assemblies exhibit a coercive field that is two orders of magnitude lower, as the result of supramolecular dynamics, and a similar level of remnant polarization, despite having a peptide content of 49 wt%. Furthermore, the Curie temperature of the assemblies is about 40 °C higher than that of a copolymer containing a similar amount of VDF. This supramolecular system was created using a biologically inspired strategy that is attractive in terms of sustainability and that could lead to new functions for soft ferroelectrics.

Rhombohedral R3 Phase of Mn-Doped Hf0.5Zr0.5O2 Epitaxial Films with Robust Ferroelectricity.

HfO2-based ferroelectric materials are emerging as key components for next-generation nanoscale devices, owing to their exceptional nanoscale properties and compatibility with established silicon-based electronics infrastructure. Despite the considerable attention garnered by the ferroelectric orthorhombic phase, the polar rhombohedral phase has remained relatively unexplored due to the inherent challenges in its stabilization. In this study, the successful synthesis of a distinct ferroelectric rhombohedral phase is reported, i.e., the R3 phase, in Mn-doped Hf0.5Zr0.5O2 (HZM) epitaxial thin films, which stands different from the conventional Pca21 and R3m polar phases. These findings reveal that this R3 phase HZM film exhibits a remnant polarization of up to 47 µC cm- 2 at room temperature, along with an exceptional retention capability projected to exceed a decade and an endurance surpassing 109 cycles. Moreover, it is demonstrated that by modulating the concentration of Mn dopant and the film's thickness, it is possible to selectively control the phase transition between the R3, R3m, and Pca21 polar phases. This research not only sheds new light on the ferroelectricity of the HfO2 system but also paves the way for innovative strategies to manipulate ferroelectric properties for enhanced device performance.

Evolution of ferroelectric and piezoelectric properties of BiFeO3 ceramics doped with lanthanum and zirconium

In this study, we performed cation substitutions at Bi-site (La3+) and Fe-site (Zr4+) to investigate their possible benefit for the ferroelectric properties of BiFeO3 ceramics. The cations with higher valence (Zr4+) ought to suppress the formation of structural defects during syntheses, such as oxygen vacancies and Fe2+. These defects are responsible for high leakage currents and low breakdown voltages characteristic of the pure BiFeO3. However, doping only with Zr did not improve the ferroelectric properties of bismuth ferrite. These samples were unable to persist electric fields above 30 kV/cm. On the other hand, the increase in lanthanum concentration resulted in improved ferroelectric and piezoelectric properties of the samples, sustaining electric fields above 100 kV/cm. Among the investigated samples, the highest remnant polarization of 24 μC/cm2 and piezoelectric coefficient (d33) of 34 pC/N reached Bi0.85La0.15FeO3 sample at 160 kV/cm. The share of non-ferroelectric contribution to the total polarization of this sample was the lowest (∼ 11 %). When it comes to the co-doped samples, the addition of Zr transformed the behavior from leaky ferroelectric to predominantly leaky dielectric. It indicated that doping with La significantly improved the ferroelectric properties of bismuth ferrite ceramics. In contrast, even a low Zr concentration of 1 mol% could outbalance the influence of much larger La concentrations (10 and 15 mol%).

Effect of grain size and grain boundary on the energy storage performance of polycrystalline ferroelectrics

Dielectric capacitors based on polycrystalline ferroelectrics have attracted much attention due to their significant power density and fast charge–discharge speed. The energy storage performance of polycrystalline ferroelectrics is highly dependent on the grain size and grain boundary. Here, the effect of grain size and grain boundary on the domain structures and polarization–electric field (P–E) hysteresis loops of polycrystalline ferroelectrics are investigated by using a phase-field model based on the time dependent Ginzburg–Landau (TDGL) equation. It is found that the depolarization field in the grain boundary induces the vortex domain when the grain size is reduced or the grain boundary thickness increases in certain extent, resulting in slender P–E loops, which contributes to an improvement in the energy storage efficiency and density. However, as the grain size further decreases or the grain boundary thickness further increases, the energy storage density decreases, which is attributed to the concurrent reduction in both the remnant and saturation polarizations. This study provides a considerable insight for optimizing the energy storage performance by carefully adjusting the grain size and grain boundary thickness in polycrystalline ferroelectrics.

A fluorite-structured HfO2/ZrO2/HfO2 superlattice based self-rectifying ferroelectric tunnel junction synapse.

A self-rectifying ferroelectric tunnel junction that employs a HfO2/ZrO2/HfO2 superlattice (HZH SL) combined with Al2O3 and TiO2 layers is proposed. The 6 nm-thick HZH SL effectively suppresses the formation of non-ferroelectric phases while increasing remnant polarization (Pr). This enlarged Pr modulates the energy barrier configuration, consequently achieving a large on/off ratio of 1273 by altering the conduction mechanism from off-state thermal injection to on-state Fowler-Nordheim tunneling. Moreover, the asymmetric Schottky barriers at the top TiN/TiO2 and bottom HfO2/Pt interfaces enable a self-rectifying property with a rectifying ratio of 1550. Through calculations and simulations it is found that the device demonstrates potential for achieving an integrated array size exceeding 7k while maintaining a 10% read margin, and shows potential for application in artificial synapses for neuromorphic computing with an image recognition accuracy above 92%. Finally, the self-rectifying behavior and device-to-device variation reliability are confirmed in a 9 × 9 crossbar array structure.

The Fluctuation Effect of Remnant Polarization in Hf₀.₅Zr₀.₅O₂ Capacitors at Elevated Temperatures

The Fluctuation Effect of Remnant Polarization in Hf₀.₅Zr₀.₅O₂ Capacitors at Elevated Temperatures

Tuning ferroelectric domains and polarization properties of flexible BiFeO3 thin films by phase transition engineering

In the present investigation, thin films of flexible (Bi1-xSmx)(Fe0.95Mn0.05)O3 (denoted as BSFM0, BSFM4, BSFM8, and BSFM12 for x=0 %, 4 %, 8 %, and 12 %, respectively) were synthesized on metallic Ni-Cr substrates via the sol-gel technique. A comprehensive examination was conducted to elucidate the influence of varying concentrations of Sm3+ substitution on the phase constitution, oxygen vacancy concentration, and leakage behavior of the (Bi1-xSmx)(Fe0.95Mn0.05)O3 films. Utilizing X-ray diffraction (XRD) and Raman spectrometry, it was ascertained that all films exhibited a composite structure comprising orthorhombic (Pnma) and rhombohedral (R3c) phases. An augmentation in Sm3+ doping led to a non-monotonic variation in the R3c phase content, initially increasing and subsequently decreasing, while the nonpolar Pnma phase demonstrated a progressive enhancement. The distorted R3c phase was found to promote the flipping of the domain architecture, thereby augmenting the polarization attributes. Notably, at a Sm doping level of 4 %, the maximum polarization (Pmax) attained was 95 μC/cm2, with a remnant polarization (Pr) of 78 μC/cm2. The incorporation of a judicious amount of Sm was observed to curtail film leakage and decelerate the aging phenomenon. The compositional stability of this doping level was evaluated across a frequency spectrum of 0.1–12 kHz and a temperature gradient of 25–200 °C, revealing no propensity for degradation under conditions of polarization, a holding duration of 104 s, or fatigue scenarios involving a curvature of 5 mm and 108 switching cycles subjected to 103 instances of bending. These findings provide innovative insights for the development of next-generation lead-free transducer apparatus and flexible information storage mediums.

Ferroelectric BaTiO3 Freestanding Sheets for an Ultra-High-Speed Light-Driven Actuator.

Light-driven actuators convert optical energy into physical motion. Organic materials, commonly used in light-driven actuators thus far, suffer from two limitations: slow repetitive operation and the requirement of two different light sources. Herein, we report a high-speed, light-driven actuator that can be operated by a single light source with low-energy density. We achieved this breakthrough by utilizing a freestanding epitaxial sheet of ferroelectric BaTiO3. One repetitive operation takes only 120 μs, which is 104 times faster than that of organic-based counterparts. The high-speed operation is derived from the light-induced nonthermal deformation provided by the excellent ferroelectricity (remnant polarization of 23 μC/cm2) and piezoelectricity (d33 of 600 pm/V) of the sheet. The displacement-to-length ratio is achieved to be 3.7% with a relatively low laser power density (10-200 mW/cm2) compared to previously reports (150-109 mW/cm2). Furthermore, the actuator was operable even in water, demonstrating its potential in various applications.

Growth and thickness effect of -oriented ternary 0.06Pb(Mn1/3Nb2/3)O3-0.94Pb(Zr0.48Ti0.52)O3 ferroelectric thin films on silicon substrate by RF sputtering

The development of advanced piezoelectric thin films with large piezoelectric response on silicon substrate is a crucial technology for piezoelectric microelectromechanical systems applications. In this work, high-quality <100>-oriented 0.06Pb(Mn1/3Nb2/3)O3-0.94Pb(Zr0.48Ti0.52)O3 (PMN-PZT) thin films were grown on the Pt/Ti/SiO2/Si substrate by sputtering. X-ray diffraction, scanning electron microscopy, and piezoresponse force microscopy were utilized to characterize the phase, morphologies, and domain structures. The growth parameters were optimized and thickness-dependent electrical properties were established. Well-crystalized micron-thick PMN-PZT films with high remnant polarization of 49 μC/cm2 and giant piezoelectric coefficient (d33) up to 484 pC/N (about twice of the polycrystalline PMN-PZT thin film and thrice of the Pb(Zr0.52Ti0.48)O3 thin film) were obtained. The excellent electrical properties make it highly advantageous for applications in MEMS devices.

Influence of RE2O3 (Dy2O3, Yb2O3, and Lu2O3) buffer layers on the structural and ferroelectric characteristics of BiFeO3 thin films

This study investigates the impact of RE2O3 (Dy2O3, Yb2O3, and Lu2O3) buffer layers on the structural and ferroelectric properties of BiFeO3 thin films grown using a spin-coating method. BiFeO3 thin films with various RE2O3 buffer layers were analyzed using x-ray diffraction, atomic force microscopy, secondary ion mass spectrometry, and x-ray photoelectron spectroscopy to determine their crystalline structures, surface topographies, depth profiles, and chemical compositions, respectively. The RE2O3-buffered BiFeO3 film showed better electrical properties compared to the control BiFeO3 film. The buffer layer composed of Yb2O3 showed the lowest leakage current of 6.82 × 10−6 A cm−2, highest remnant polarization of 44.1 μC cm−2, and smallest coercive field of 189 kV cm−1 because of the incorporation of Yb3+ ions into the BiFeO3 film, high degree of (110) preferred orientation, high Fe3+ content, low surface roughness, reduction of Fe3+ valence fluctuation to Fe2+ ions, and decrease in oxygen vacancies. Such BiFeO3 thin films with various RE2O3 buffer layers using spin-coating method pave a pathway toward practical applications of spintronic, sensor and memory.

Effects of electrical and mechanical properties of Ba0.92Ca0.08Zr0.05Ti0.95O3 ceramics with lanthanum dopants

Element doping is one of the important approaches to improve the performance of lead-free piezoelectric ceramics. In this study, Ba0·92Ca0·08Zr0·05Ti0·95O3-xLa (BCZT-xLa) piezoelectric ceramics were prepared by sol–gel method. The effects of La3+ contents on the phase structure, mechanical properties, and electrical properties of BCZT-xLa ceramics were investigated. Results showed that La3+ could affect the properties of ceramics by adjusting the concentration of oxygen vacancies and microstructure. When the La3+ contents were 0.008, the ceramics showed the best performance (the maximum permittivity was 8736.27, the remnant polarisation was 9.69 μC/cm2 and the coercive field was 3.44 kV/cm). The influences of Vickers hardness on ceramics were investigated using various La3+ contents. The lattice energy and oxygen vacancies were the main factors for the change in Vickers hardness. With an increment of x, the Vickers hardness values decreased from 6.271 GPa to 1.438 GPa. This study could provide a reference for BCZT piezoelectric ceramics doped with rare earth elements.

Incorporation of specific defects through ion bombardment for better ferroelectrics

AbstractIncorporating specific defects into complex oxides facilitates the exploration of exotic phenomena and novel functionalities based on the intricate coupling between the defects and lattice/charge. However, methods for maximizing the density of specific defects while enhancing the desired properties have been rarely explored. In this study, the effect of N+ ion bombardment‐driven specific defects on the properties of bismuth ferrite (BFO) thin films was investigated. Furthermore, atomic structure characterization and computational processing revealed the displacement and orientation of the Fe atoms, which are linearly related to the degree of polarization. The ion bombardment introduced deep‐level trap states within the lattice, leading to a significant reduction in the leakage current and improved insulation performance of the films. By precisely engineering the defect content through N+ ion bombardment, the pure BFO thin films with remarkable and stable ferroelectric properties (remnant polarization, Pr = ∼116.8 µC·cm−2; leakage current, J = ∼1.5 × 10−8 A·cm−2) were fabricated. This innovative defect engineering‐based approach enables the customization and optimization of local ferroelectric order parameters, thereby establishing a solid foundation for designing functionalities across various functional material systems.

Giant energy density with ultrahigh efficiency achieved in NaNbO3-based lead-free ceramics with polymorphic antiferrodistortive polar nanodomains

The development of dielectric ceramics with simultaneously high energy-storage density (Wrec) and efficiency (η) for capacitive energy storage poses a significant challenge. Herein, an effective strategy to achieve ultrahigh comprehensive energy-storage performance via designing polymorphic antiferrodistortive polar nanodomains is proposed, successfully realizing a giant Wrec of ∼7.5 J/cm3 with an ultrahigh η of ∼94 % in (0.9-x)NaNbO3-0.1BaZrO3-xBi(Mg0.5Ti0.5)O3 ((0.9-x)NN-0.1BZ-xBMT) lead-free ceramics at x = 0.08. The studied ceramic also exhibits excellent temperature-insensitive charge–discharge performances of high power density ∼204 ± 3 % MW/cm3, high discharge energy density ∼3.7 ± 3 % J/cm3 and fast discharge rate < 60 ns within 25–150 °C. The observation of ex-/in-situ piezoresponse force microscopy and transmission electron microscope reveals that polar nanodomains with multiple antiferrodistortive FE symmetries and diverse scales exhibit dissimilatory transformation behavior into FE microdomains during electric field loading/unloading, being responsible for a low-hysteresis polarization-field response with a near-zero remnant polarization and a high maximum polarization. Meanwhile, optimized bandgap structure and grain morphology contribute to the enhanced ceramic resistivity and conductivity activation energy as well as suppressed leakage current, resulting in significantly improved dielectric breakdown strength. These results demonstrate a feasible strategy for developing novel high-performance dielectric ceramics for high-efficiency capacitive energy storage.

Tunable Ferroionic Properties in CeO2/BaTiO3 Heterostructures.

Ferroionic materials combine ferroelectric properties and spontaneous polarization with ionic phenomena of fast charge recombination and electrodic functionalities. In this paper, we propose the concept of tunable polarization in CeO2-δ (ceria) thin (5 nm) films induced by built-in remnant polarization of a BaTiO3 (BTO) ferroelectric thin film interface, which is buried under the ceria layer. Upward and downward fixed polarizations at the BTO thin film (10 nm) are achieved by the lattice termination engineering of the SrO or TiO2 terminated Nb:SrTiO3 (NSTO or STN) substrate. We find that the ceria layer punctually replicates the polarization of the BTO interface via a dynamic reconfiguration of its intrinsic defects, i.e., oxygen vacancies and small polarons. Tunable oxidative or reducing properties (redox) also arise at the surface from the built-in polarization. Opposite polarities at the ceria termination tune the chemo-physical dynamics toward water molecule adsorbates. The inversion of the surface potential leads to a modulation of the water adsorption-desorption equilibrium and water ionization (splitting) redox overpotentials within ±400 mV at room temperature, depending on the ceria termination's charges. Such tunability opens up the perspectives of using ferroionics for wireless electrochemically enhanced catalysis.

Effect of atomic layer deposition process parameters on TiN electrode for Hf0.5Zr0.5O2 ferroelectric capacitor

Abstract Hf0.5Zr0.5O2 (HZO), as a novel and outstanding ferroelectric material, exhibits an extremely high sensitivity, rendering it quite susceptible to electrode effect. Titanium nitride (TiN) is a commonly employed as electrode material in the complementary metal-oxide-semiconductor (CMOS) process. Adjusting the process parameters of preparing TiN film can alter matching degree with HZO, so as to find the optimal parameters of TiN process to improve ferroelectric property of HZO. In this study, the impact of key process parameters in atomic layer deposition (ALD) TiN, including cycle number, TiCl4 and NH3 pluse time, process temperature (Tp) on film thickness, crystalline phases of TiN, square resistivity (Rs), surface average roughness (Ra) and the root-mean-square roughness (Rq) of TiN film are comprehensively investigated. Through optimization, ~10nm ALD TiN film can achieve excellent uniformity of 0.43%, low Rs of 286.9Ω/sq, improved Ra and Rq of 1.82Å and 2.28Å. The results show that the maximum 2 times remnant polarization (2Pr) of the HZO ferroelectric capacitor with optimized TiN electrodes can reach 36.34µC/cm2, and the switching cycle endurance exceeds 1E7.&amp;#xD;