Abstract
This study investigates the impact of RE2O3 (Dy2O3, Yb2O3, and Lu2O3) buffer layers on the structural and ferroelectric properties of BiFeO3 thin films grown using a spin-coating method. BiFeO3 thin films with various RE2O3 buffer layers were analyzed using x-ray diffraction, atomic force microscopy, secondary ion mass spectrometry, and x-ray photoelectron spectroscopy to determine their crystalline structures, surface topographies, depth profiles, and chemical compositions, respectively. The RE2O3-buffered BiFeO3 film showed better electrical properties compared to the control BiFeO3 film. The buffer layer composed of Yb2O3 showed the lowest leakage current of 6.82 × 10−6 A cm−2, highest remnant polarization of 44.1 μC cm−2, and smallest coercive field of 189 kV cm−1 because of the incorporation of Yb3+ ions into the BiFeO3 film, high degree of (110) preferred orientation, high Fe3+ content, low surface roughness, reduction of Fe3+ valence fluctuation to Fe2+ ions, and decrease in oxygen vacancies. Such BiFeO3 thin films with various RE2O3 buffer layers using spin-coating method pave a pathway toward practical applications of spintronic, sensor and memory.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
