Abstract
Ion modification techniques for improving the insulating and ferroelectric properties of BiFeO3 (BFO) thin films are reported. Rare-earth-substituted BFO films with chemical compositions of Bi1.00-xRExFe1.00O3 [RE = La and Nd] were fabricated on (111)Pt/TiO2/SiO2/(100)Si substrates using a chemical solution deposition technique. Well-saturated P-E curves were obtained for La3+- and Nd3+-substituted BFO films, while the curve of a nonsubstituted BFO film was distorted due to the leakage current. Remanent polarization (Pr) values measured at 10 K were respectively 44 and 51 µC/cm2, for La3+- and Nd3+-substituted BFO films, which are significantly superior to conventional Pb-free ferroelectrics.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
