Abstract
Abstract Hf0.5Zr0.5O2 (HZO), as a novel and outstanding ferroelectric material, exhibits an extremely high sensitivity, rendering it quite susceptible to electrode effect. Titanium nitride (TiN) is a commonly employed as electrode material in the complementary metal-oxide-semiconductor (CMOS) process. Adjusting the process parameters of preparing TiN film can alter matching degree with HZO, so as to find the optimal parameters of TiN process to improve ferroelectric property of HZO. In this study, the impact of key process parameters in atomic layer deposition (ALD) TiN, including cycle number, TiCl4 and NH3 pluse time, process temperature (Tp) on film thickness, crystalline phases of TiN, square resistivity (Rs), surface average roughness (Ra) and the root-mean-square roughness (Rq) of TiN film are comprehensively investigated. Through optimization, ~10nm ALD TiN film can achieve excellent uniformity of 0.43%, low Rs of 286.9Ω/sq, improved Ra and Rq of 1.82Å and 2.28Å. The results show that the maximum 2 times remnant polarization (2Pr) of the HZO ferroelectric capacitor with optimized TiN electrodes can reach 36.34µC/cm2, and the switching cycle endurance exceeds 1E7.
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